| 1. |
- Biester, EM, et al.
(författare)
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Identification of avian wax synthases
- 2012
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Ingår i: BMC biochemistry. - : Springer Science and Business Media LLC. - 1471-2091. ; 13, s. 4-
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Tidskriftsartikel (refereegranskat)
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| 2. |
- Hellenbrand, J, et al.
(författare)
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Fatty acyl-CoA reductases of birds
- 2011
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Ingår i: BMC biochemistry. - : Springer Science and Business Media LLC. - 1471-2091. ; 12, s. 64-
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Tidskriftsartikel (refereegranskat)
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| 3. |
- Memisevic, E., et al.
(författare)
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Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- 2017
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Ingår i: 2016 IEEE International Electron Devices Meeting, IEDM 2016. - 9781509039012 ; , s. 1-19
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Konferensbidrag (refereegranskat)abstract
- We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.
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| 4. |
- Möhle, C., et al.
(författare)
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1/f and RTS noise in InGaAs nanowire MOSFETs
- 2017
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 178, s. 52-55
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Tidskriftsartikel (refereegranskat)abstract
- Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.
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