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Search: WFRF:(Hentzell HTG)

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  • Carlsson, JRA, et al. (author)
  • A new silicon phosphide, Si12P5 : Formation conditions, structure, and properties
  • 1997
  • In: Journal of Vacuum Science and Technology A. - : American Vacuum Society. - 0734-2101. ; 15:2, s. 394-401
  • Journal article (peer-reviewed)abstract
    • The formation conditions, structure, and properties of the recently discovered phosphide, Si12P5 (initially assigned Si7P3), have been studied using x-ray diffraction, high-resolution transmission electron microscopy, photospectrometry, and a four-point probe. The phosphide formed in amorphous Si-P alloy thin films with 30, 35 and 44 at. % P after annealing at 1000°C for 30 min. During annealing at 1100°C, the phosphide dissociated through P evaporation. The Si12P5 phase is proposed to have rhombohedral symmetry with a P31m space group and a C5W12 structure. The hexagonal lattice parameters measured were a = 6.16±0.05 Å and c = 13.17±0.01 Å. The optical band gap and the electrical resistivity of the phosphide were determined to be 1.55 eV and 5 mΩ cm, respectively. The Gibbs free energy diagram for the Si-P system was modified to include this new Si12P5 phase.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Wallenberg, LR (1)
Li, XH (1)
Hultman, L (1)
Johansson, MP (1)
Carlsson, JRA (1)
Madsen, LD (1)
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Hentzell, HTG (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
1997 (1)

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