| 1. |
- Liu, Chaocheng, et al.
(författare)
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Probing the Néel-Type Antiferromagnetic Order and Coherent Magnon–Exciton Coupling in Van Der Waals VPS3
- 2023
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Ingår i: Advanced Materials. - 0935-9648. ; 35:30
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Tidskriftsartikel (refereegranskat)abstract
- 2D van der Waals (vdW) antiferromagnets have received intensive attention due to their terahertz resonance, multilevel magnetic-order states, and ultrafast spin dynamics. However, accurately identifying their magnetic configuration still remains a challenge owing to the lack of net magnetization and insensitivity to external fields. In this work, the Néel-type antiferromagnetic (AFM) order in 2D antiferromagnet VPS3 with the out-of-plane anisotropy, which is demonstrated by the temperature-dependent spin–phonon coupling and second-harmonic generation (SHG), is experimentally probed. This long-range AFM order even persists at the ultrathin limit. Furthermore, strong interlayer exciton–magnon coupling (EMC) upon the Néel-type AFM order is detected based on the monolayer WSe2/VPS3 heterostructure, which induces an enhanced excitonic state and further certifies the Néel-type AFM order of VPS3. The discovery provides optical routes as the novel platform to study 2D antiferromagnets and promotes their potential applications in magneto-optics and opto-spintronic devices.
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| 2. |
- Xiong, Shaobing, et al.
(författare)
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Direct Observation on p- to n-Type Transformation of Perovskite Surface Region during Defect Passivation Driving High Photovoltaic Efficiency
- 2021
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Ingår i: Joule. - : CELL PRESS. - 2542-4351. ; 5:2, s. 467-480
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Tidskriftsartikel (refereegranskat)abstract
- Perovskite solar cells (PSCs) suffer from significant nonradiative recombination, limiting their power conversion efficiencies. Here, for the first time, we directly observe a complete transformation of perovskite MAPbI(3) surface region energetics from p- to n-type during defect passivation caused by natural additive capsaicin, attributed to the spontaneous formation of a p-n homojunction in perovskite active layer. We demonstrate that the p-n homojunction locates at similar to 100 nm below perovskite surface. The energetics transformation and defect passivation promote charge transport in bulk perovskite layer and at perovskite/PCBM interface, suppressing both defect-assisted recombination and interface carrier recombination. As a result, an efficiency of 21.88% and a fill factor of 83.81% with excellent device stability are achieved, both values are the highest records for polycrystalline MAPbI(3) based p-i-n PSCs reported to date. The proposed new concept of synergetic defect passivation and energetic modification via additive provides a huge potential for further improvement of PSC performance.
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