| 1. |
- Gurnett, M, et al.
(författare)
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Core-level spectroscopy study of the Li/Si(111)-3 x 1, Na/Si(111)-3 x 1, and K/Si(111)-3 x 1 surfaces
- 2005
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 71:19
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Tidskriftsartikel (refereegranskat)abstract
- In this article we report Si 2p core-level spectroscopy results from the alkali (Li, Na, and K) induced Si(111)-3 x 1 reconstructions. The experimental results are compared to the theoretical honeycomb-chain channel (HCC) model for,the 3 x 1 reconstruction using density functional theory (DFT) to calculate core-level shifts using both initial and final-state calculation schemes. Si 2p core-level spectra for the Li, Na, and K reconstructions showed two surface related components lying on either side of the main bulk Si 2P(3/2) peak. An additional higher binding energy component was found for K. All core-level spectra showed strong similarities leading to the conclusion that the surfaces do indeed share a common structure. With increasing alkali metal size, the lower binding energy component was found to shift away from the main bulk peak. Our theoretical calculations also show a similar trend. It is concluded that the lower binding energy surface component originates from the alkali atom bonded Si atoms. The origin of the higher binding energy component was determined based on trends in the peak height and final-state DFT calculations. It was found that this component derives from several atoms in the first and second layers. Calculations which include final-state effects were found to be in good agreement with the experimentally determined surface core-level shifts.
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| 2. |
- Johansson, MKJ, et al.
(författare)
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Adsorption of C-60 on Al(111) studied with scanning tunnelling microscopy
- 1998
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Ingår i: SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0039-6028. ; 397:1-3, s. 314-321
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Scanning tunnelling microscopy has been used to study the adsorption and interactions of C-60 on Al(111) at room temperature. Initially, C-60 forms chains of molecules on the lower terraces of step edges, which indicates that the molecules have a high mob
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| 3. |
- Johansson, MKJ, et al.
(författare)
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Scanning tunneling microscopy of C-60/Al(111)-6x6: Inequivalent molecular sites and electronic structures
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:19, s. 13472-13475
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We present a scanning tunneling microscopy and spectroscopy (STM/S) study of a thermally stable, annealed monolayer of C-60 On Al(111). The C-60 molecules are arranged into a close-packed hexagonal layer of 2 root 3 x 2 root 3 periodicity with the symmetr
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| 4. |
- MAXWELL, AJ, et al.
(författare)
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C-60 ON AL(111) - COVALENT BONDING AND SURFACE RECONSTRUCTION
- 1995
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. ; 52:8
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We present photoemission and C 1s photoabsorption data for an annealed monolayer C-60/Al(111), which show that a strong covalent bond is formed between the C-60 molecules and the substrate. Low-energy electron-diffraction and scanning tunneling microscopy
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| 5. |
- Abukawa, T, et al.
(författare)
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Anomalous diffraction effect on the surface core-level photoemission from Si(001)2x1-Cs surface
- 1998
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Ingår i: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - : ELSEVIER SCIENCE BV. - 0368-2048. ; 88, s. 539-543
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The angular dependence of the Si 2p photoelectron intensity has been measured for a Cs-saturated Si(001)2 x 1 surface. A surface Si 2p component, which is attributed to the Si-dimer underneath the Cs overlayer, shows a large intensity variation as a funct
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| 6. |
- GREHK, TM, et al.
(författare)
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ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE
- 1993
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 47:20, s. 13887-13890
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Tidskriftsartikel (refereegranskat)abstract
- The Si(111) square-root 3 X square-root 3R 30-degrees:B surface with submonolayer coverages of potassium has been studied with angle-resolved photoelectron spectroscopy. Deposition of potassium leads to the formation of a state 0.7 eV below the Fermi level. The energy position of this state showed only a minor dependence on the actual potassium coverage and the state displayed a small dispersion of 0.1 eV when probed along the GAMMABAR-MBAR' direction in the square-root 3 X square-root 3R 30-degrees-surface Brillouin zone. These results support the idea that a mainly covalent bonding exists between the potassium atoms and the Si surface.
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| 7. |
- GREHK, TM, et al.
(författare)
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CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION
- 1995
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:15, s. 11165-11171
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Tidskriftsartikel (refereegranskat)abstract
- Both the clean and Cs-exposed Si(111)root 3X root 3R30 degrees:B surfaces have been investigated by high-resolution photoemission. In the spectra from the Si 2p level, contributions were identified from the bulk, the adatoms plus the first layer, the second and 2/3 ML of the third-layer atoms not binding to the B atoms, and, finally, the 1/3 ML of third-layer atoms binding to the boron atoms. The interaction between the Cs atoms and the surface is found to be dependent on the coverage. At low coverages the geometric and electronic structure of the Si(111)root 3X root 3R30 degrees:B interface is only to a minor degree affected by the presence of Cs on the surface. At high coverage the Cs atoms react with the surface and alter the binding configuration of the Si adatoms.
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| 8. |
- HAKANSSON, MC, et al.
(författare)
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PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS
- 1995
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:16, s. 11646-11649
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Tidskriftsartikel (refereegranskat)abstract
- Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.
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| 9. |
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| 10. |
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| 11. |
- PATTHEY, L, et al.
(författare)
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MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE
- 1995
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Ingår i: PHYSICAL REVIEW LETTERS. - : AMER INST PHYSICS. - 0031-9007. ; 75:13, s. 2538-2541
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The submonolayer growth of Ge on single domain Si(001)-(2 X 1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown tha
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