| 1. |
- Johansson, MKJ, et al.
(författare)
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Adsorption of C-60 on Al(111) studied with scanning tunnelling microscopy
- 1998
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Ingår i: SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0039-6028. ; 397:1-3, s. 314-321
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Scanning tunnelling microscopy has been used to study the adsorption and interactions of C-60 on Al(111) at room temperature. Initially, C-60 forms chains of molecules on the lower terraces of step edges, which indicates that the molecules have a high mob
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| 2. |
- Johansson, MKJ, et al.
(författare)
-
Scanning tunneling microscopy of C-60/Al(111)-6x6: Inequivalent molecular sites and electronic structures
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:19, s. 13472-13475
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We present a scanning tunneling microscopy and spectroscopy (STM/S) study of a thermally stable, annealed monolayer of C-60 On Al(111). The C-60 molecules are arranged into a close-packed hexagonal layer of 2 root 3 x 2 root 3 periodicity with the symmetr
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| 3. |
- MAXWELL, AJ, et al.
(författare)
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C-60 ON AL(111) - COVALENT BONDING AND SURFACE RECONSTRUCTION
- 1995
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. ; 52:8
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We present photoemission and C 1s photoabsorption data for an annealed monolayer C-60/Al(111), which show that a strong covalent bond is formed between the C-60 molecules and the substrate. Low-energy electron-diffraction and scanning tunneling microscopy
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| 4. |
- Maxwell, AJ, et al.
(författare)
-
Electronic and geometric structure of C-60 on Al(111) and Al(110)
- 1998
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 57:12, s. 7312-7326
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Two new ordered monolayer phases of C-60 on Al surfaces have been studied using electron spectroscopies and low-energy electron diffraction (LEED). On Al(111), in addition to the previously reported (6x6) phase formed by evaporating with T-sample=620 K, a
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| 5. |
- Sandell, A, et al.
(författare)
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Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide
- 2002
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 92:6, s. 3381-3387
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Tidskriftsartikel (refereegranskat)abstract
- The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide.
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