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- Hwang, Sunbin, et al.
(författare)
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All-Solid-State Organic Schmitt Trigger Implemented by Twin Two-in-One Ferroelectric Memory Transistors
- 2020
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Ingår i: Advanced Electronic Materials. - : WILEY. - 2199-160X. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been many attempts to replace conventional inorganic electronics with organic materials that can be mass produced at low cost, few organic electronic filters to increase immunity to electrical noise have been reported thus far. Conventional Schmitt triggers or their inverters are used in many electronic circuits as versatile electronic noise filters. However, it is challenging to manufacture organic electronic systems with complex circuitry. In this study, a simple, all-solid-state organic Schmitt trigger consisting of twin two-in-one organic ferroelectric memory transistors with the same chemical compositions and device dimensions but different threshold voltages is introduced. Threshold voltages and hysteresis in the two-in-one devices can be controlled by polarization switching as demonstrated in a previous study. Hysteresis of a ferroelectric p-type depletion load inverter can be achieved using twin two-in-one devices when the sweep voltage is higher than the critical gate voltages. This facilitates inverter characteristics at two different threshold voltages, and realizing a Schmitt trigger. Finally, based on simulation program with integrated circuit emphasis (SPICE) simulation, guidelines are proposed on how to design organic Schmitt triggers with p- or n-type materials and ferroelectric or charge-trapping mechanisms to achieve inverting or non-inverting characteristics.
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| 2. |
- Hwang, Sunbin, et al.
(författare)
-
Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking
- 2019
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Ingår i: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 11:28, s. 25358-25368
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Tidskriftsartikel (refereegranskat)abstract
- Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.
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