| 1. |
- Andreou, Charalambos M., et al.
(författare)
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
- 2016
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Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 63:6, s. 2950-2961
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Tidskriftsartikel (refereegranskat)abstract
- An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 mu m CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.
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| 2. |
- Andreou, Charalambos, et al.
(författare)
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A Subthreshold, Low-Power, RHBD Reference Circuit, for Earth Observation and Communication Satellites
- 2015
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Ingår i: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on. - 9781479983919 ; , s. 2245-2248
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Konferensbidrag (refereegranskat)abstract
- A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4 mu W and exhibits a measured Temperature Drift of 15ppm/degrees C for a temperature range of 190 degrees C (-60 degrees C to 130 degrees C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18 mu m standard CMOS technology and occupies a silicon area of 0.039mm(2). The proposed voltage reference is suitable for high-precision and low-power space applications.
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| 3. |
- Andreou, Charalambos M., et al.
(författare)
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Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
- 2019
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Ingår i: Electronics. - : MDPI. - 2079-9292. ; 8:5
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Tidskriftsartikel (refereegranskat)abstract
- The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under -rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor's 0.18 m standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.
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| 4. |
- Chernyaeva, Larisa, et al.
(författare)
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Reduced binding of apoE4 to complement factor H promotes amyloid-β oligomerization and neuroinflammation
- 2023
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Ingår i: EMBO Reports. - 1469-221X. ; 24:7
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Tidskriftsartikel (refereegranskat)abstract
- The APOE4 variant of apolipoprotein E (apoE) is the most prevalent genetic risk allele associated with late-onset Alzheimer's disease (AD). ApoE interacts with complement regulator factor H (FH), but the role of this interaction in AD pathogenesis is unknown. Here we elucidate the mechanism by which isoform-specific binding of apoE to FH alters Aβ1-42-mediated neurotoxicity and clearance. Flow cytometry and transcriptomic analysis reveal that apoE and FH reduce binding of Aβ1-42 to complement receptor 3 (CR3) and subsequent phagocytosis by microglia which alters expression of genes involved in AD. Moreover, FH forms complement-resistant oligomers with apoE/Aβ1-42 complexes and the formation of these complexes is isoform specific with apoE2 and apoE3 showing higher affinity to FH than apoE4. These FH/apoE complexes reduce Aβ1-42 oligomerization and toxicity, and colocalize with complement activator C1q deposited on Aβ plaques in the brain. These findings provide an important mechanistic insight into AD pathogenesis and explain how the strongest genetic risk factor for AD predisposes for neuroinflammation in the early stages of the disease pathology.
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