| 1. |
- Chen, Anqi, et al.
(författare)
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Highly Sensitive Graphene Oxide-based Fabry-Perot Low-frequency Acoustic Sensor With Low-coherence Polarized Demodulation Using Three-step Phase-Shifting Arctan Algorithms
- 2024
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; In Press
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Tidskriftsartikel (refereegranskat)abstract
- Developing low-frequency acoustic senor with high sensitivity is crucial for diverse applications, ranging from seismic monitoring, military operations, to pipeline surveillance. Here, we have proposed a high-sensitivity graphene oxide (GO)-based Fabry-Perot low-frequency sensor, in which a 170 nm thick, large-area and uniformly GO film was prepared by a vacuum filtration method. To enhance the accuracy and stability of the sensor, a low-coherence interference system based on birefringent crystal blocks was designed utilizing a three-step phase-shifting arctangent algorithm. Our sensor exhibited a sensitivity of -93.48 dB re 1 rad/μPa at 6-60 Hz with a fluctuation of 0.6 dB. The minimum detectable pressure of the sensor was measured at 0.37 μPa/Hz1/2 @20 Hz with a signal to noise ratio of 135.41 dB. Overall, this sensor offers simplicity in preparation, high sensitivity, low detectable sound pressure, making it a significant asset for low-frequency acoustic applications.
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| 2. |
- Cheng, Kai, et al.
(författare)
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2D lateral heterostructures of group-III monochalcogenide : Potential photovoltaic applications
- 2018
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 112:14
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Tidskriftsartikel (refereegranskat)abstract
- Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.
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| 3. |
- Feng, Junfeng, et al.
(författare)
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Comparison of Care System and Treatment Approaches for Patients with Traumatic Brain Injury in China versus Europe : A CENTER-TBI Survey Study
- 2020
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Ingår i: Journal of Neurotrauma. - : Mary Ann Liebert. - 0897-7151 .- 1557-9042. ; 37:16, s. 1806-1817
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Tidskriftsartikel (refereegranskat)abstract
- Traumatic brain injury (TBI) poses a huge public health and societal problem worldwide. Uncertainty exists on how care system and treatment approaches for TBI worked in China may differ from those in Europe. Better knowledge on this is important to facilitate interpretation of findings reported by Chinese researchers and to inform opportunities for collaborative studies. We aimed to investigate concordance and variations in TBI care between Chinese and European neurotrauma centers. Investigators from 52 centers in China and 68 in Europe involved in the Collaborative European Neuro Trauma Effectiveness Research in Traumatic Brain Injury (CENTER-TBI) study were invited to complete provider profiling (PP) questionnaires, which covered the main aspects of care system and treatment approaches of TBI care. Participating Chinese and European centers were mainly publicly funded and academic. More centers in China indicated available dedicated neuro-intensive care than those in Europe (98% vs. 60%), and treatment decisions in the ICU were mainly determined by neurosurgeons (58%) in China while in Europe, (neuro)intensivists often took the lead (61%). The ambulance dispatching system was automatic in half of Chinese centers (49%), whereas selective dispatching was more common in European centers (74%). For treatment of refractory intracranial hypertension, a decompressive craniectomy was more frequently regarded as general policy in China compared with in Europe (89% vs. 45%). We observed both concordance and substantial variations with regard to the various aspects of TBI care between Chinese and European centers. These findings are fundamental to guide future research and offer opportunities for collaborative comparative effectiveness research to identify best practices.
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| 4. |
- Li, Jingyi, et al.
(författare)
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Cis-acting mutation affecting GJA5 transcription is underlying the Melanotic within-feather pigmentation pattern in chickens
- 2021
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Ingår i: Proceedings of the National Academy of Sciences of the United States of America. - : Proceedings of the National Academy of Sciences (PNAS). - 0027-8424 .- 1091-6490. ; 118:41
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Tidskriftsartikel (refereegranskat)abstract
- Melanotic (Ml) is a mutation in chickens that extends black (eumelanin) pigmentation in normally brown or red (pheomelanin) areas, thus affecting multiple within-feather patterns [J. W. Moore, J. R. Smyth Jr, J. Hered. 62, 215-219 (1971)]. In the present study, linkage mapping using a back-cross between Dark Cornish (Ml/Ml) and Partridge Plymouth Rock (ml(+)/ml(+)) chickens assigned Ml to an 820-kb region on chromosome 1. Identity-by-descent mapping, via whole-genome sequencing and diagnostic tests using a diverse set of chickens, refined the localization to the genomic region harboring GJA5 encoding gap-junction protein 5 (alias connexin 40) previously associated with pigmentation patterns in zebrafish. An insertion/deletion polymorphism located in the vicinity of the GJA5 promoter region was identified as the candidate causal mutation. Four different GJA5 transcripts were found to be expressed in feather follicles and at least two showed differential expression between genotypes. The results showed that Melanotic constitutes a cis-acting regulatory mutation affecting GJA5 expression. A recent study established the melanocortin-1 receptor (MC1R) locus and the interaction between the MC1R receptor and its antagonist agoutisignaling protein as the primary mechanism underlying variation in within-feather pigmentation patterns in chickens. The present study advances understanding the mechanisms underlying variation in plumage color in birds because it demonstrates that the activity of connexin 40/GJA5 can modulate the periodic pigmentation patterns within individual feathers.
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| 5. |
- Qin, Ning, 1990, et al.
(författare)
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Flux regulation through glycolysis and respiration is balanced by inositol pyrophosphates in yeast
- 2023
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Ingår i: Cell. - : Elsevier BV. - 0092-8674 .- 1097-4172. ; 186:4, s. 748-763.e15
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Tidskriftsartikel (refereegranskat)abstract
- Although many prokaryotes have glycolysis alternatives, it's considered as the only energy-generating glucose catabolic pathway in eukaryotes. Here, we managed to create a hybrid-glycolysis yeast. Subsequently, we identified an inositol pyrophosphatase encoded by OCA5 that could regulate glycolysis and respiration by adjusting 5-diphosphoinositol 1,2,3,4,6-pentakisphosphate (5-InsP7) levels. 5-InsP7 levels could regulate the expression of genes involved in glycolysis and respiration, representing a global mechanism that could sense ATP levels and regulate central carbon metabolism. The hybrid-glycolysis yeast did not produce ethanol during growth under excess glucose and could produce 2.68 g/L free fatty acids, which is the highest reported production in shake flask of Saccharomyces cerevisiae. This study demonstrated the significance of hybrid-glycolysis yeast and determined Oca5 as an inositol pyrophosphatase controlling the balance between glycolysis and respiration, which may shed light on the role of inositol pyrophosphates in regulating eukaryotic metabolism.
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| 6. |
- Qin, Ning, et al.
(författare)
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Increased CO 2 fixation enables high carbon-yield production of 3-hydroxypropionic acid in yeast
- 2024
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Ingår i: Nature Communications. - 2041-1723 .- 2041-1723. ; 15:1
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Tidskriftsartikel (refereegranskat)abstract
- CO2 fixation plays a key role to make biobased production cost competitive. Here, we use 3-hydroxypropionic acid (3-HP) to showcase how CO2 fixation enables approaching theoretical-yield production. Using genome-scale metabolic models to calculate the production envelope, we demonstrate that the provision of bicarbonate, formed from CO2, restricts previous attempts for high yield production of 3-HP. We thus develop multiple strategies for bicarbonate uptake, including the identification of Sul1 as a potential bicarbonate transporter, domain swapping of malonyl-CoA reductase, identification of Esbp6 as a potential 3-HP exporter, and deletion of Uga1 to prevent 3-HP degradation. The combined rational engineering increases 3-HP production from 0.14 g/L to 11.25 g/L in shake flask using 20 g/L glucose, approaching the maximum theoretical yield with concurrent biomass formation. The engineered yeast forms the basis for commercialization of bio-acrylic acid, while our CO2 fixation strategies pave the way for CO2 being used as the sole carbon source.
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| 7. |
- Wang, Guilei, et al.
(författare)
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Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
- 2017
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Ingår i: Nanoscale Research Letters. - : Springer. - 1931-7573 .- 1556-276X. ; 12
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Tidskriftsartikel (refereegranskat)abstract
- In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-xGex growth (0.35 <= x <= 0.40) with boron concentration of 1-3 x 10(20) cm(-3) was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.
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| 8. |
- Wang, Guilei, et al.
(författare)
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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
- 2017
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Ingår i: Nanoscale Research Letters. - : SPRINGER. - 1931-7573 .- 1556-276X. ; 12
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH4 is superior to that of devices featuring ALD W using B2H6. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH4 and B2H6 precursors, i.e. tensile stresses for SiH4 (similar to 2.4 GPa) and for B2H6 (similar to 0.9 GPa).
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| 9. |
- Wang, Guilei, et al.
(författare)
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Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
- 2016
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Ingår i: Microelectronic Engineering. - : Elsevier. - 0167-9317 .- 1873-5568. ; 163, s. 49-54
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Tidskriftsartikel (refereegranskat)abstract
- In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si1-xGex (0.35 <= x <= 0.40) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the source/drain of the transistors. The epi-quality, layer profile and strain amount of the selectively grown SiGe layers were also investigated by means of various characterizations. A series of prebaking experiments were performed for temperatures ranging from 740 to 825 degrees C in order to in situ clean the Si fins prior to the epitaxy. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damages to the shape of Si fins but to remove the native oxide effectively which is essential for high epitaxial quality. The Ge content in SiGe layers on Si fins was determined from the strain measured directly by reciprocal space mappings using synchrotron radiation. Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an AID approach, decent growth rate, low resistivity and excellent gap filling capability of W in pretty high aspect-ratio gate trench was realized. The as-fabricated FinFETs demonstrated decent electrical characteristics.
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| 10. |
- Xiong, Wenjuan, et al.
(författare)
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SiNx films and membranes for photonic and MEMS applications
- 2020
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 31, s. 90-97
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Tidskriftsartikel (refereegranskat)abstract
- This work presents a novel process to form SiN x films and process for membranes with excellent mechanical properties for micro-electro-mechanical systems application as well as integration as IR waveguide for photonic application. The SiN x films were fabricated in SiNgen apparatus which is a single wafer chamber equipment compared to conventional low pressure chemical vapor deposition furnace process. The films showed low stress, good mechanical properties, but the synthesis also eradicates the issues of particle contamination. Through optimizing of the growth parameters and post annealing profile, low stress (40 Mpa) SiN x film could be finally deposited when annealing temperature rose up to 1150 °C. The stress relaxation is a result of more Si nano-crystalline which was formed during annealing, according to the FTIR results. The mechanical properties, Young’s modulus and hardness, were 210 Gpa and 20 Gpa respectively. For the waveguide application, a stack of three layers, SiO 2 /SiN x /SiO 2 was formed where the optimized layer thicknesses were used for minimum optical loss according to simulation feedback. After deposition of the first two layers in the stack, the samples were annealed in range of 900–1150 °C in order to release the stress. Chemical mechanical polish technique was applied to planarize the nitride layer prior to the oxide cladding layer. Such wafers can be used to bond to Si or Ge to manufacture advanced substrates.
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