| 1. |
- HAKANSSON, MC, et al.
(author)
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PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS
- 1995
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:16, s. 11646-11649
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Journal article (peer-reviewed)abstract
- Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.
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| 2. |
- Kowalski, BJ, et al.
(author)
-
MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure
- 2004
-
In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics. - 0587-4246. ; 105:6, s. 645-650
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Journal article (peer-reviewed)abstract
- MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
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| 3. |
- Kowalski, BJ, et al.
(author)
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Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study
- 2002
-
In: Surface Science. - 0039-6028. ; 507, s. 186-191
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Journal article (peer-reviewed)abstract
- We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.
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| 4. |
- OLSSON, LO, et al.
(author)
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ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
- 1995
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:3, s. 1470-1473
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Journal article (peer-reviewed)abstract
- The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
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