| 1. |
- Sadowski, Janusz, et al.
(författare)
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Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
- 2018
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 10:44, s. 20772-20778
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Tidskriftsartikel (refereegranskat)abstract
- SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of depositing a protective capping layer in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.
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| 2. |
- Andrearczyk, Tomasz, et al.
(författare)
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Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
- 2020
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 13:23, s. 1-14
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Tidskriftsartikel (refereegranskat)abstract
- Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with those for the reference (Ga,Mn)As layers, grown under similar conditions, with the aim to reveal an impact of Bi incorporation on the properties of this DMS material. Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy. In turn, importantly for specific spintronic applications, strong spin-orbit coupling in ferromagnetic systems opens a possibility of directly controlling the direction of magnetization by the electric current. Our investigations, performed with high-resolution X-ray diffractometry and transmission electron microscopy, demonstrate that the (Ga,Mn)(Bi,As) layers of high structural quality and smooth interfaces can be grown by means of the low-temperature molecular-beam epitaxy method, despite a large difference between the sizes of Bi and As atoms. Depending on the applied buffer layer, the DMS layers can be grown under either compressive or tensile misfit strain, which influences their magnetic properties. It is shown that even small 1% Bi content in the layers strongly affects their magnetoelectric properties, such as the coercive field and anisotropic magnetoresistance.
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| 3. |
- Kaleta, Anna, et al.
(författare)
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Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells
- 2019
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 19:10, s. 7324-7333
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Tidskriftsartikel (refereegranskat)abstract
- Nearly a 30% increase in the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry, and the first-principles calculations. The effect relies on defining a nanotube geometry of molecular beam epitaxy grown core-multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires, where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs-MnAs granular system. Such a unique combination of two types of hexagonal lattices provides a possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound.
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| 4. |
- Sadowski, Janusz, et al.
(författare)
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Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al) As-Ga(As,Bi) core shell nanowires
- 2022
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Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 degrees C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio similar to 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.
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