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Sökning: WFRF:(Kanski J.)

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1.
  • Nicolaï, L., et al. (författare)
  • Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
  • 2019
  • Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
  • Tidskriftsartikel (refereegranskat)abstract
    • The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.
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2.
  • Lang, J. J. K., et al. (författare)
  • Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
  • 2011
  • Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 605:9-10, s. 883-888
  • Tidskriftsartikel (refereegranskat)abstract
    • Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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3.
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4.
  • Laukkanen, P., et al. (författare)
  • Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
  • 2011
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:23, s. 231908-1-231908-3
  • Tidskriftsartikel (refereegranskat)abstract
    • Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
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5.
  • Nicolai, L., et al. (författare)
  • Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
  • 2019
  • Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
  • Tidskriftsartikel (refereegranskat)abstract
    • The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(111) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d(5/2) photoelectron signals allow to get a comprehensive picture of the Bi/InAs(111) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of approximate to 10 bi-layers on the A face is identical to that of bulk Bi, while more than approximate to 30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the (Gamma) over bar point of the Brillouin zone.
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6.
  • Nilsson, P. O., et al. (författare)
  • Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
  • 1995
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52, s. R8643-
  • Tidskriftsartikel (refereegranskat)abstract
    • It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.
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7.
  • Sadowski, J., et al. (författare)
  • Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
  • 2000
  • Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 18:3, s. 1697-1700
  • Tidskriftsartikel (refereegranskat)abstract
    • GaMnAs layers with Mn contents from 0.05% to 7% were grown by low temperature molecular beam epitaxy. At substrate temperatures lower than 300 degrees C and in this composition range a uniform ternary GaMnAs compound can be grown without MnAs precipitation. Reflection high energy electron diffraction intensity oscillations recorded during GaMnAs growth were used to calibrate the composition of the GaMnAs films with high accuracy (better than 0.1%). Films containing more than 1% Mn exhibit a ferromagnetic phase transition with Curie temperatures from a few up to 70 K depending on the composition and other growth parameters. In contrast to previous reports we have observed this transition also in the case of layers grown at very low substrate temperatures (below 300 degrees C).
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8.
  • Adell, M., et al. (författare)
  • Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
  • 2006
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:17
  • Tidskriftsartikel (refereegranskat)abstract
    • Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
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9.
  • Agui, A., et al. (författare)
  • Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 166:1-4, s. 309-312
  • Tidskriftsartikel (refereegranskat)abstract
    • A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L2,3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations.
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10.
  • Glover, C. J., et al. (författare)
  • Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
  • 2009
  • Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
  • Tidskriftsartikel (refereegranskat)abstract
    • Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
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11.
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12.
  • Mankefors, S., et al. (författare)
  • Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 61:8, s. 5540-5545
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by ab initio calculations. Unique experimental soft-x-ray emission spectra are explained in terms of interface effects and changes with layer thickness are found in the density of states. Only the central layer in the 5-ML geometry is bulklike. A valence-band offset of 0.53 eV is also found for this structure, while no offset exists in the 1- and 2-ML cases. Very good agreement is achieved between theory and experiment.
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16.
  • Varekamp, P R, et al. (författare)
  • Angle-resolved photoemission spectroscopy of the 1x1 ordered overlayers on iodine-saturated GaAs(001) and InAs(001)
  • 1996
  • Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 352, s. 387-390
  • Tidskriftsartikel (refereegranskat)abstract
    • Angle-resolved valence band photoelectron spectra are collected from 1 X 1 ordered overlayers on I-2-saturated GaAs(001)-4 x 1, -c(2 X 8), and InAs(001)-c(8 x 2). A high-intensity dispersive surface state, located approximately 4.4 eV below the valence band maximum, is observed in each case. The state passes through an open lens in the projected bulk density of states and disperses symmetrically around the surface Brillouin zone edge. For all surfaces studied, the state is stronger when excited with the electric field polarized in the [110], as compared to the <(1)over bar 10>], azimuth. Since the state is independent of the termination of the initial surface, and since iodine bonds primarily to the outermost element, the state must result from delocalization of the electron states in the overlayer, and is not related to bonding with the substrate.
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17.
  • Varekamp, P R, et al. (författare)
  • Reaction of I-2 with the (001) surfaces of GaAs, InAs, and InSb .2. Ordering of the iodine overlayer
  • 1996
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 54:3, s. 2114-2120
  • Tidskriftsartikel (refereegranskat)abstract
    • The overlayer formed by the reaction of molecular iodine (I-2) with GaAs(001), InAs(001), and InSb(001) is investigated with synchrotron soft x-ray photoelectron spectroscopy (SXPS) and scanning tunneling microscopy (STM). Two components, separated by about 0.5 eV, are present in all of the I 4d SXPS spectra. At very low iodine coverages, the high binding energy (BE) component dominates. When the iodine coverage saturates, however, the two components have equal intensities. In contrast to GaAs and InAs, exposure of InSb(001)-c(8x2) to additional I-2 results in a further increase of the relative intensity of the low-BE component. STM images of I-2 covered InSb(001)-c(8x2) directly reveal the ordering in the overlayer. Islands are visible for submonolayer coverages, suggesting that adsorption occurs via a mobile precursor state. STM images feature occupies a 1x1 unit cell with the same spacing as bulk-terminated InSb(001). The other feature has a coverage of similar to 1/3 ML and is arranged in pairs oriented along the [110] azimuth.
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18.
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19.
  • Agui, A, et al. (författare)
  • Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
  • 2000
  • Ingår i: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0169-4332. ; 166:1-4, s. 309-312
  • Tidskriftsartikel (refereegranskat)abstract
    • A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, wh
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20.
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22.
  • Mathieu, R., Sørensen, B.S., Sadowski, J., Södervall, U., Kanski, J., Svedlindh, P., Lindelof, P.E., Hrabovsky, D. and Vanelle, E. (författare)
  • Magnetization of ultrathin (Ga,Mn)As layers
  • 2003
  • Ingår i: Phys. Rev. B 68, 184421 (2003)..
  • Tidskriftsartikel (refereegranskat)
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23.
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24.
  • Mikkelsen, Anders, et al. (författare)
  • A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)
  • 2004
  • Ingår i: Applied Surface Science. - 1873-5584. ; 222:1-4, s. 23-32
  • Tidskriftsartikel (refereegranskat)abstract
    • The surface structure and chemical composition of annealed Ga0.96Mn0.04As(1 0 0) have been studied by scanning tunneling microscopy (STM), auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The samples were As capped and subsequently transferred in-air from the MBE system to the STM chamber. After annealing to 600 K it is found that the Mn segregates to the surface and forms a compound, which is stable up to annealing temperatures of 790 K. For annealing temperatures above 825 K a well-ordered phase exists signified by a LEED pattern consisting of a superposition of a (1 x 6) and a (4 x 2) pattern. LEED and STM measurements demonstrate that the surface is dominated by (1 x 6) domains coexisting with small patches of (4 x 2) domains. By comparing the STM images of the high temperature phase found on Ga0.96Mn0.04As(1 0 0) with the high temperature phases found on ordinary GaAs(1 0 0), we demonstrate differences between annealed Ga0.96Mn0.04As(1 0 0) and GaAs(1 0 0) in both surface morphology and atomic structure. We argue that the Ga0.96Mn0.04As surface is more As rich than the GaAs surface prepared in a similar fashion. Reasons for these differences are discussed.
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29.
  • Simpson, W C, et al. (författare)
  • Role of surface stoichiometry in the Cl-2/GaAs(001) reaction
  • 1996
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 14:3, s. 1815-1821
  • Tidskriftsartikel (refereegranskat)abstract
    • The room-temperature reaction of Cl-2 with GaAs(001)-4x6, -c(2x8), and -c(4x4) surfaces is studied with synchrotron soft x-ray photoelectron spectroscopy. The chemical composition of the reacted surfaces is found to depend on the stoichiometry of the starting surface. In all cases, the reaction occurs stepwise, with Ga and As monochlorides formed prior to the dichlorides. The Ga-rich surface is initially more reactive than either of the As-rich surfaces and it forms more GaCl than the As-rich surfaces, which instead form more AsCl. The sticking coefficient for chlorine on GaAs(001) decays exponentially with coverage. A contribution from Cl atoms comprising the surface dichlorides is identified in the Cl 2p core-level spectra. (C) 1996 American Vacuum Society.
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30.
  • Stanciu, V., et al. (författare)
  • Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
  • 2005
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 72:12
  • Tidskriftsartikel (refereegranskat)abstract
    • The influence of annealing parameters—temperature (Ta) and time (ta)—on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films has been investigated. The dependence of the transition temperature (TC) on ta marks out two regions. The TC peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second ("saturated") region the effect of ta is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield TC-values of ~150 K and above, regardless of the thickness of the epilayers
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31.
  • Varekamp, P R, et al. (författare)
  • Reaction of I-2 with the (001) surfaces of GaAs, InAs, and InSb .1. Chemical interaction with the substrate
  • 1996
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 54:3, s. 2101-2113
  • Tidskriftsartikel (refereegranskat)abstract
    • InAs(001)-c(8x2), InSb(001)-c(8x2), and several reconstructions of GaAs(001) are exposed at room temperature to iodine molecules (I-2). Low-energy electron diffraction (LEED) and synchrotron soft x-ray photoelectron spectroscopy (SXPS) are employed to study the surfaces as a function of I-2 dose and sample anneal. In the exposure range studied, GaAs and InAs become saturated with I-2, resulting in removal of the clean surface reconstruction and the formation of a very strong 1x1 LEED pattern. Iodine bonds primarily to the dominant elemental species present on the clean surface, whether it is a group-III or -V element. The InSb(001)-c(8x2) reconstruction is also removed by I-2 adsorption, and a strong 1x1 LEED pattern is formed. SXPS data, in conjunction with scanning tunneling microscopy images, however, reveal that InSb(001)-c(8x2) does not saturate at room temperature, but is instead etched with a preferential loss of In. Heating the iodine-covered group-III-rich InAs(001)-c(8x2) and InSb(001)-c(8x2) surfaces causes removal of the iodine overlayer and transformation to a group-V-rich reconstruction. When the iodine-covered As-rich GaAs(001)-c(2x8) surface is heated to remove iodine, however, the c(2x8) reconstruction is simply regenerated.
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32.
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33.
  • Adell, M, et al. (författare)
  • Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As
  • 2004
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 70:12: 125204
  • Tidskriftsartikel (refereegranskat)abstract
    • Using angle resolved photoemission we have investigated annealing-induced changes in Ga1-xMnxAs with x=0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments.
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34.
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36.
  • Adell, Martin, et al. (författare)
  • Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
  • 2005
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 112501-
  • Tidskriftsartikel (refereegranskat)abstract
    • In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
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37.
  • Andersson, C B M, et al. (författare)
  • Electronic structure of InAs((1)over-bar-(1)over-bar-(1)over-bar)2x2 and InSb((1)over-bar-(1)over-bar-(1)over-bar)2x2 studied by angle-resolved photoelectron spectroscopy
  • 1996
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 54:3, s. 1833-1840
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic structure of molecular-beam-epitaxy-grown InAs((111) over bar)2x2 and InSb((111) over bar)2x2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures.
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38.
  • Andersson, C B M, et al. (författare)
  • Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy
  • 1996
  • Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 347:1-2, s. 199-206
  • Tidskriftsartikel (refereegranskat)abstract
    • Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs((111) over bar)2 x 2 and InSb((111) over bar)2 x 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.
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39.
  • ANDERSSON, CBM, et al. (författare)
  • CORE-LEVEL PHOTOEMISSION FROM (III)-TYPE INAS SURFACES
  • 1994
  • Ingår i: Journal de Physique IV. - : EDP Sciences. - 1155-4339 .- 1764-7177. ; 4:C9, s. 209-212
  • Tidskriftsartikel (refereegranskat)abstract
    • The InAs(111)2x2 and InAs(($$$) over bar 111)1x1 surfaces have been studied with high resolution core level spectroscopy. For the InAs(($$$) over bar 111)1x1 surface both the In 4d and the As 3d core levels display strong surface core level shifts, while for the InAs(111)2x2 surface only the In 4d level shows a detectable surface shift. The results indicate that the InAs(($$$) over bar 111)1x1 surface is relaxed, with atom layer displacement extending to subsurface layers. Unexpectedly, we find no surface shifted anion core level for the InAs(111)2x2 surface.
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40.
  • ANDERSSON, CBM, et al. (författare)
  • SPUTTERED AND ANNEALED INAS(111)OVER-BAR - AN UNRECONSTRUCTED SURFACE
  • 1994
  • Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 307, s. 885-889
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic structure of the InAs(111BAR)1 X 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines GAMMAKBAR, GAMMAMBAR, and GAMMAMBAR of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their E(i)(k(parallel-to)) dispersions are established. Both S1 and S2 show the symmetry of the 1 X 1 surface Brillouin zone, which is consistent with the observed 1 X 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.
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41.
  • Asklund, H, et al. (författare)
  • Photoemission study of GaAs (100) grown at low temperature
  • 2002
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 65:11
  • Tidskriftsartikel (refereegranskat)abstract
    • GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.
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42.
  • Chauhan, H. S., et al. (författare)
  • Direct- and inverse-photoemission investigations of the electronic structure of Cd(0001)
  • 1993
  • Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 48:7, s. 4729-4734
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoemission and inverse angle-resolved photoemission spectra are presented for Cd(0001). The data are interpreted in terms of interband transitions, density-of-states effects, and excitations of surface states.
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43.
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44.
  • Di Marco, Igor, et al. (författare)
  • Electron correlations in MnxGa1-xAs as seen by resonant electron spectroscopy and dynamical mean field theory
  • 2013
  • Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 4, s. 6-
  • Tidskriftsartikel (refereegranskat)abstract
    • After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.
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45.
  • Hakansson, M C, et al. (författare)
  • The electronic structure of In- and As-terminated InAs(001) surfaces
  • 1997
  • Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 374:1-3, s. 73-79
  • Tidskriftsartikel (refereegranskat)abstract
    • The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
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46.
  • HAKANSSON, MC, et al. (författare)
  • DIMER FORMATION AND ELECTRONIC-STRUCTURE ON THE GE(100)(2X1)-SB SURFACE
  • 1992
  • Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 278:1-2, s. L131-L134
  • Tidskriftsartikel (refereegranskat)abstract
    • Deposition of antimony on Ge(100)2 X 1 results in a well-ordered, highly passivated surface. From a comparison between core-level data and angle-resolved photoemission data, we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric Sb-Sb dimers on the Ge surface.
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47.
  • HAKANSSON, MC, et al. (författare)
  • PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS
  • 1995
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:16, s. 11646-11649
  • Tidskriftsartikel (refereegranskat)abstract
    • Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.
  •  
48.
  • He, Z Q, et al. (författare)
  • As overlayer on GaAs(110) studied with photoemission
  • 1995
  • Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
  • Tidskriftsartikel (refereegranskat)abstract
    • As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
  •  
49.
  • He, Z Q, et al. (författare)
  • Band structure evolution in InAs overlayers on GaAs(110)
  • 1996
  • Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 104, s. 608-614
  • Tidskriftsartikel (refereegranskat)abstract
    • An angle-resolved photoemission study of MBE grown InAs/GaAs(110) hetero-structures was carried out to investigate the establishment of valence bands as a function of overlayer thickness. The valence band spectra were found to change gradually up to thicknesses well above 10 nm. The data are interpreted in terms of excitations within the overlayer from a combination of substrate and overlayer initial states, the former tailing into the overlayer.
  •  
50.
  • Ilver, L, et al. (författare)
  • Quantum size effects in epitaxial ErAs on GaAs(001)
  • 1996
  • Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 77:24, s. 4946-4949
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic structure of very thin epitaxial ErAs layers on GaAs(100) is studied with angle resolved photoelectron spectroscopy. Clear evidence is found for confinement induced quantization of states around the Fermi level. From the dispersive properties of the quantum well states effective masses are obtained, representing electron motion parallel to the surface layers and orthogonal to the layers. We find, for the first time, that effective masses along equivalent bulk directions (XW) are significantly different in the thin layers. Furthermore, the bottom of the highest occupied band shifts towards the Fermi level when going from very thin to thick ErAs layers.
  •  
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