| 1. |
- Adell, Johan, 1980, et al.
(författare)
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Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B
- 2011
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Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 151:11, s. 850-854
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Tidskriftsartikel (refereegranskat)abstract
- Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. (C) 2011 Elsevier Ltd. All rights reserved.
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| 2. |
- Adell, Johan, et al.
(författare)
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Formation of epitaxial MnBi layers on (Ga,Mn)As
- 2009
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121 .- 2469-9950 .- 2469-9969. ; 80:7
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Tidskriftsartikel (refereegranskat)abstract
- The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
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| 3. |
- Adell, Johan, 1980, et al.
(författare)
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Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
- 2011
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Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 23:8
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Tidskriftsartikel (refereegranskat)abstract
- Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
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| 4. |
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| 5. |
- Andreasson, Måns, 1975, et al.
(författare)
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Organic molecular beam deposition system and initial studies of organic layer growth
- 2006
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Ingår i: Physica Scripta. - 1402-4896 .- 0031-8949. ; T126, s. 1-5
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Tidskriftsartikel (refereegranskat)abstract
- This work describes an organic molecular beam deposition system with substrate entry/exitchamber, buffer chamber and with the possibility to transfer substrate from a III–V molecularbeam deposition system. Flux calibrations of organic molecules and the initial growth oforganic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylicdianhydride and copper phtalocyanine were used. Layers were grown on oxidized andhydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth wasinvestigated with atomic force microscopy, reflection high energy electron diffraction andultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Ramanspectroscopy on the effect of atmospheric exposure is also included, showing little effect ofsurface pollution when the samples were handled carefully. The initial formation (monolayers)of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.
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| 6. |
- Guziewicz, E., et al.
(författare)
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Mn on the surface of ZnO(0001) - a resonant photoemisson study
- 2005
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T115, s. 541-544
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of Mn/ZnO system has been invesigated by synchrotron radiation photoemission. Manganese vacuum deposition was done at room temperature onto a ZnO(0001) single crystal for coverage Mn-Theta <= 4 ML. Photoemission spectra taken near the Mn3p-Mn3d absorption edge after each deposition step show resonant enhancement of Mn3d states within 10 eV of the Fermi edge. The experimentally deduced partial Mn3d density of states for Theta >= 1.2 ML shows at least three features: a major Mn3d structure at 3.8-4.5 eV below the Fermi edge, a valence structure at lower binding energy (1-3 eV) and a broad satelite in the 5.5-9 eV range. The branching ratio of satellite/main structure increases with depostion from 0.33 for 0.4 ML to 0.65 for 4 ML. After annealing up to 500 degrees C the satellite/main ratio decreases to 0.43 indicating a high degree of hybridization between the Mn3d states and valence band of ZnO. After annealing no manganese cap layer was found at the crystal surfaces as was confirmed by the lack of metallic Fermi edge in photoemission spectra and by scanning Auger spectroscopy experiment. The photoemission Mn3p core level spectra taken after annealing consist of two components separated by about 4 eV, which shows that at least two manganese states are observed in the Mn-ZnO interface region.
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| 7. |
- Kanski, Janusz, 1946, et al.
(författare)
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Electronic structure of (Ga,Mn)As revisited
- 2017
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Ingår i: New Journal of Physics. - : Institute of Physics (IOP). - 1367-2630. ; 19:2, s. 1-8
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Tidskriftsartikel (refereegranskat)abstract
- The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs.For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.
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| 8. |
- Kanski, Janusz, 1946, et al.
(författare)
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Mn-induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects
- 2012
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Ingår i: Journal of Physics: Condensed Matter. - : IOP Publishing. - 1361-648X .- 0953-8984. ; 24:43, s. 1-435802
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Tidskriftsartikel (refereegranskat)abstract
- Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown Ga(1-x)Mn(x)As. Although Mn is located in Ga substitutional sites, and therefore does not have any Ga nearest neighbors, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the region of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter.
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| 9. |
- Laukkanen, P., et al.
(författare)
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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:23, s. 231908-1-231908-3
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
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| 10. |
- Nicolai, L., et al.
(författare)
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Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
- 2019
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
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Tidskriftsartikel (refereegranskat)abstract
- The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(111) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d(5/2) photoelectron signals allow to get a comprehensive picture of the Bi/InAs(111) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of approximate to 10 bi-layers on the A face is identical to that of bulk Bi, while more than approximate to 30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the (Gamma) over bar point of the Brillouin zone.
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| 11. |
- Sadowski, Janusz, et al.
(författare)
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GaAs : Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
- 2007
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 7, s. 2724-
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Tidskriftsartikel (refereegranskat)abstract
- GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111) direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics.
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| 12. |
- Strocov, V. N., et al.
(författare)
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GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study
- 2005
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16:8, s. 1326-1334
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Tidskriftsartikel (refereegranskat)abstract
- GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale.
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| 13. |
- Ulfat, I., et al.
(författare)
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Effects of nonuniform Mn distribution in (Ga,Mn)As
- 2014
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Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 89:4, s. art no 045312-
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Tidskriftsartikel (refereegranskat)abstract
- Resonant in situ photoemission from Mn 3d states in Ga(1−x)MnxAs is reported for Mn concentrations down to the very dilute level of 0.1%. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys. Effects of direct Mn-Mn interaction are found for concentrations as low as 2.5%, and are ascribed to statistical (nonuniform) distribution of Mn atoms.
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| 14. |
- Ulfat, Intikhab, 1966, et al.
(författare)
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Electron Spectroscopic Studies of Homogenous (GaMn)As layers
- 2012
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Ingår i: Advanced Materials Research. - 1662-8985 .- 1022-6680. - 9783037853634 ; 463-464, s. 380-384
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Konferensbidrag (refereegranskat)abstract
- By incorporating magnetism into semiconductors, it may possibly be viable to enhance the functionality of materials. An exceptionally important material in this context is GaAs, which can be doped with Mn atoms. (GaMn)As has fascinated research community as a promising candidate for spintronic application. It is quite appealing due to both its compatibility with existing HI-V technology and great progress in improving its magnetic properties. Being fabricated by low temperature molecular beam epitaxy (LT-MBE), due to thermal instability at elevated temperatures, the material contains a high density of various defects compensating Mn acceptors. It is a well-established fact that the ferromagnetic state of (GaMn)As can be stabilized via post growth annealing. Nevertheless, in general, the annealed (GaMn)As layers do not remain useful for further epitaxial overgrowth that might be included in multilayer structure. We present a summary of our investigations regarding the synchrotron-based characterization of (GaMn)As layers grown via molecular beam epitaxy carried out at the Swedish National Facility of Synchrotron Radiation-the MAX-lab aiming at the reduction of the density of Mn interstitial and increase in the content of Mn.
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| 15. |
- Ulfat, Intikhab, et al.
(författare)
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Reply to Comment on "As 3d core level studies of (GaMn)As annealed under As capping" by I. Ulfat, J. Adell, J. Sadowski, L. Ilver, J. Kanski, [Surface Science 604 (2010), 125] by P. Jiricek, M. Cukr, I. Bartos
- 2010
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 604:21-22, s. 2065-2065
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 16. |
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| 17. |
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| 18. |
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| 19. |
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| 20. |
- Adell, Martin, et al.
(författare)
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Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
- 2005
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 112501-
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Tidskriftsartikel (refereegranskat)abstract
- In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
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| 21. |
- Andreasson, Måns, 1975, et al.
(författare)
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Photoelectron spectroscopic studies of ultra-thin CuPc and PTCDA layers on Cu(100)
- 2008
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Ingår i: Synthetic Metals. - : Elsevier BV. - 0379-6779. ; 158:1-2, s. 45-49
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Tidskriftsartikel (refereegranskat)abstract
- The initial interaction and interface formation between Cu(100) and the organic semiconductors 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and copper phtalocyanine (CuPc) has been studied by means of angle-resolved UV photoelectron spectroscopy (ARUPS). Both CuPc and PTCDA are known to adsorb strongly on the Cu(100) surface. The bonding interaction is revealed via interface-related structures in photoemission spectra. However, the spectra develop rather differently in the low coverage regime: while CuPc molecular states are observed below monolayer coverage, the first PTCDA layer is found to be reacted such that the adsorbate-induced emission is strongly modified relative that of intact PTCDA molecules. We find a number of structures that are neither PTCDA- nor Cu-derived, and that the oxygen-related component of the PTCDA spectrum is completely missing in spectra from the monolayer. Importantly for device applications, we find evidence of interfacial electronic states in the form of new peaks located in the former HOMO-LUMO gap for both molecules. In the case of PTCDA these support a chemisorptive bonding model, whereas in the case of CuPc we interpret the state as a monolayer-specific resonance.
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| 22. |
- Bouravleuv, A. D., et al.
(författare)
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Electronic structure of (In, Mn) As quantum dots buried in GaAs investigated by soft-x-ray ARPES
- 2016
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 27:42
-
Tidskriftsartikel (refereegranskat)abstract
- Electronic structure of a molecular beam epitaxy-grown system of (In, Mn) As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in similar to 2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In, Mn) As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In, Mn) As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In, Mn) As QDs to the prototype (In, Mn) As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In, Mn) As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In, Mn) As based systems.
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| 23. |
- Di Marco, Igor, et al.
(författare)
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Electron correlations in MnxGa1-xAs as seen by resonant electron spectroscopy and dynamical mean field theory
- 2013
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 4, s. 6-
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Tidskriftsartikel (refereegranskat)abstract
- After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.
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| 24. |
- Glover, C. J., et al.
(författare)
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Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
- 2009
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
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Tidskriftsartikel (refereegranskat)abstract
- Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
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| 25. |
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| 26. |
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| 27. |
- Lang, J. J. K., et al.
(författare)
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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
- 2011
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 605:9-10, s. 883-888
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Tidskriftsartikel (refereegranskat)abstract
- Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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| 28. |
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| 29. |
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| 30. |
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| 31. |
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| 32. |
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| 33. |
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| 34. |
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| 35. |
- Ulfat, Intikhab, 1966, et al.
(författare)
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As3d core level studies of (GaMn)As annealed under As capping
- 2010
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 604:2, s. 125-128
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Tidskriftsartikel (refereegranskat)abstract
- The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.
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| 36. |
- Ulfat, Intikhab, 1966, et al.
(författare)
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Post-growth annealing of (Ga,Mn)As under Sb capping
- 2012
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Ingår i: Applied Mechanics and Materials. - 1660-9336. - 9783037855102 ; 243-246, s. 243-246
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Konferensbidrag (refereegranskat)abstract
- (Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.
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