| 1. |
- Bing, Zhao, 1990, et al.
(författare)
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Unconventional Charge–Spin Conversion in Weyl-Semimetal WTe2
- 2020
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 32:38
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Tidskriftsartikel (refereegranskat)abstract
- An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, a charge-current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature are reported. Contrary to the conventional spin Hall and Rashba–Edelstein effects, the measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin–orbit interaction with a novel spin-texture of the Fermi states. A robust and practical method is demonstrated for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in the graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as nonmagnetic spin sources in all-electrical van der Waals spintronic circuits and for low-power and high-performance nonvolatile spintronic technologies.
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| 2. |
- Dankert, André, 1986, et al.
(författare)
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Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown h-BN/graphene/h-BN van der Waals heterostructures were prepared by layer transfer technique and Hall sensors were batch-fabricated with 1D edge metal contacts. The current-related Hall sensitivities up to 97 V/AT are measured at room temperature. The Hall sensors showed robust performance over the wafer scale with stable characteristics over six months in ambient environment. This work opens avenues for further development of growth and fabrication technologies of all-CVD 2D material heterostructures and allows further improvements in Hall sensor performance for practical applications.
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| 3. |
- Dankert, André, 1986, et al.
(författare)
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Origin and evolution of surface spin current in topological insulators
- 2018
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 97:12
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Tidskriftsartikel (refereegranskat)abstract
- The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezin g out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100K. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2and100K, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.
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| 4. |
- Hoque, Anamul Md, 1988, et al.
(författare)
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All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
- 2021
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Ingår i: Communications Physics. - : Springer Science and Business Media LLC. - 2399-3650. ; 4:1
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Tidskriftsartikel (refereegranskat)abstract
- The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.
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| 5. |
- Hoque, Anamul Md, 1988, et al.
(författare)
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Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures
- 2020
-
Ingår i: Physical Review Research. - 2643-1564. ; 2:3
-
Tidskriftsartikel (refereegranskat)abstract
- A spin-polarized current source using nonmagnetic layered materials is promising for next-generation all-electrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe2 via the charge-spin conversion process. Using a hybrid device of TaTe2 in a van der Waals heterostructure with graphene, the spin polarization in TaTe2 is efficiently injected and detected by nonlocal spin-switch, Hanle spin precession, and inverse spin Hall effect measurements. Systematic experiments at different bias currents and gate voltages in a vertical geometry prove the TaTe2 as a nonmagnetic spin source at room temperature. These findings demonstrate the possibility of making an all-electrical spintronic device in a two-dimensional van der Waals heterostructure, which can be essential building blocks in energy-efficient spin-orbit technology.
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| 6. |
- Karpiak, Bogdan, 1992, et al.
(författare)
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1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures
- 2018
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 5:1, s. 014001-
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Tidskriftsartikel (refereegranskat)abstract
- We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron-and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be an additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which needs further investigation. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.
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| 7. |
- Karpiak, Bogdan, 1992, et al.
(författare)
-
Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts
- 2017
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 122:5
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Tidskriftsartikel (refereegranskat)abstract
- Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility, and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available chemical vapor deposited (CVD) graphene protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene active regions of Hall samples to the outputs, 1D edge contacts were utilized which show reliable and stable electrical properties. The operation of the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By changing the carrier concentration and type in graphene by the application of gate voltage, we are able to tune the Hall sensitivity.
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| 8. |
- Karpiak, Bogdan, 1992, et al.
(författare)
-
Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene
- 2020
-
Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 7:1
-
Tidskriftsartikel (refereegranskat)abstract
- Engineering 2D material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which can be ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices.
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| 9. |
- Karpiak, Bogdan, 1992
(författare)
-
Spin and magneto transport in van der Waals heterostructures of graphene with ferromagnets
- 2021
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The increasing demand for information and communication technologies has augmented the requirements of electronic devices with improved speed, sensitivity, and reduced power consumption. The utilization of novel electronic materials and the use of the spin degree of freedom as a state variable for information processing and storage are expected to fulfill these demands. In this direction, two-dimensional (2D) materials have attracted a significant research effort with the long-term goal of creating electronic devices with novel functionalities. Graphene has shown excellent potential for future device applications due to its outstanding electronic carrier mobility and spin coherence time at room temperature. Followed by the successful advent of graphene, a vast plethora of 2D materials with complementary electronic properties have been discovered, such as insulating hexagonal boron nitride (hBN), magnets and topological semimetals. We observed that engineering 2D material heterostructures by combining the best of different materials in one ultimate unit offers the possibility of the creation of new phases of matter and novel opportunities in device design. For example, graphene is shown to acquire magnetic properties because of proximity-induced interactions with a magnetic insulator in van der Waals heterostructure. On the other hand, topological semimetal candidates such as WTe2 and ZeTe5 allowed us to observe unconventional charge-to-spin conversion and anomalous Hall effects due to their enormous spin-orbit coupling, lower crystal symmetry, and larger fictitious magnetic field in the crystals. Furthermore, the performance of heterostructures comprised of graphene and hBN with one-dimensional ferromagnetic edge contacts and a path for optimizing such device geometry is outlined. These experimental findings on 2D materials and heterostructure device architectures can contribute to developing a new platform for spintronic as well as quantum science and technology.
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| 10. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
-
Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
- 2020
-
Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 11:1
-
Tidskriftsartikel (refereegranskat)abstract
- Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.
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| 11. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
-
Multifunctional Spin Logic Operations in Graphene Spin Circuits
- 2022
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Ingår i: Physical Review Applied. - 2331-7019. ; 18:6
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Tidskriftsartikel (refereegranskat)abstract
- Spin-based computing, combining logic and nonvolatile magnetic memory, is promising for emerg-ing information technologies. However, the realization of a universal spin logic operation, representing a reconfigurable building block with all-electrical spin-current communication, has so far remained chal-lenging. Here, we experimentally demonstrate reprogrammable all-electrical multifunctional spin logic operations in a nanoelectronic device architecture, utilizing graphene buses for spin communication and mixing and nanomagnets for writing and reading information at room temperature. This device realizes a multistate spin-majority logic operation, which is reconfigured to achieve (N)AND, (N)OR, and XNOR Boolean operations, depending on the magnetization of inputs. The results are in good agreement with the predictions from a spin-circuit model, providing an experimental demonstration of a spin-based logic unit that takes advantage of the vector nature of spin, as opposed to conventional scalar charge-based devices. These spin logic operations in large-area graphene are fully compatible with industrial fabrication pro-cesses and represent a promising platform for scalable all-electric spin-based logic-in-memory computing architecture.
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| 12. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
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Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries
- 2020
-
Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 14:11, s. 15864-15873
-
Tidskriftsartikel (refereegranskat)abstract
- The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all of the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and D'yakonov-Perel' mechanisms with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits.
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| 13. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
-
Tailoring emergent spin phenomena in Dirac material heterostructures
- 2018
-
Ingår i: Science advances. - : American Association for the Advancement of Science (AAAS). - 2375-2548. ; 4:9
-
Tidskriftsartikel (refereegranskat)abstract
- Dirac materials such as graphene and topological insulators (TIs) are known to have unique electronic and spintronic properties. We combine graphene with TIs in van der Waals heterostructures to demonstrate the emergence of a strong proximity-induced spin-orbit coupling in graphene. By performing spin transport and precession measurements supported by ab initio simulations, we discover a strong tunability and suppression of the spin signal and spin lifetime due to the hybridization of graphene and TI electronic bands. The enhanced spin-orbit coupling strength is estimated to be nearly an order of magnitude higher than in pristine graphene. These findings in graphene-TI heterostructures could open interesting opportunities for exploring exotic physical phenomena and new device functionalities governed by topological proximity effects.
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| 14. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
-
Two-dimensional spintronic circuit architectures on large scale graphene
- 2020
-
Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 161, s. 892-899
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Tidskriftsartikel (refereegranskat)abstract
- Solid state electronics based on utilizing the electron spin degree of freedom for storing and processing information can pave the way for next-generation spin-based computing. However, the realization of spin communication between multiple devices in complex spin circuit geometries, essential for practical applications, is still lacking. Here, we demonstrate the spin current propagation in two-dimensional (2D) circuit architectures consisting of multiple devices and configurations using a large area CVD graphene on SiO2/Si substrate at room temperature. Taking advantage of the significant spin transport distance reaching 34 μm in commercially available wafer-scale graphene grown on Cu foil, we demonstrate that the spin current can be effectively communicated between the magnetic memory elements in graphene channels within 2D circuits of Y-junction and hexa-arm architectures. We further show that by designing graphene channels and ferromagnetic elements at different geometrical angles, the symmetric and antisymmetric components of the Hanle spin precession signal can be remarkably controlled. These findings lay the foundation for the design of complex 2D spintronic circuits, which can be integrated into efficient electronics based on the transport of pure spin currents.
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| 15. |
- Kovacs-Krausz, Zoltan, et al.
(författare)
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Revealing the band structure of ZrTe5 using multicarrier transport
- 2023
-
Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 107:7
-
Tidskriftsartikel (refereegranskat)abstract
- The layered material ZrTe5 appears to exhibit several exotic behaviors, which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low-temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been recently elucidated as originating from band shifting in the electronic structure. Our work examines magnetotransport behavior in ZrTe5 samples in the context of multicarrier transport. The results, in conjunction with ab initio band structure calculations, indicate that many of the transport features of ZrTe5 across the majority of the temperature range can be adequately explained by the semiclassical multicarrier transport model originating from a complex Fermi surface.
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| 16. |
- Munkhbat, Battulga, 1988, et al.
(författare)
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Electrical Control of Hybrid Monolayer Tungsten Disulfide-Plasmonic Nanoantenna Light-Matter States at Cryogenic and Room Temperatures
- 2020
-
Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 14:1, s. 1196-1206
-
Tidskriftsartikel (refereegranskat)abstract
- Hybrid light-matter states-polaritons-have attracted considerable scientific interest recently, motivated by their potential for development of nonlinear and quantum optical schemes. To realize such states, monolayer transition metal dichalcogenides (TMDCs) have been widely employed as excitonic materials. In addition to neutral excitons, TMDCs host charged excitons, which enables active tuning of hybrid light-matter states by electrical means. Although several reports demonstrated charged exciton-polaritons in various systems, the full-range interaction control attainable at room temperature has not been realized. Here, we demonstrate electrically tunable charged exciton-plasmon polaritons in a hybrid tungsten disulfide (WS2) monolayer-plasmonic nanoantenna system. We show that electrical gating of monolayer WS2 allows tuning the oscillator strengths of neutral and charged excitons not only at cryogenic but also at room temperature, both at vacuum and atmospheric pressure. Such electrical control enables a full-range tunable switching from strong neutral exciton-plasmon coupling to strong charged exciton-plasmon coupling. Our experimental findings allow discussing beneficial and limiting factors of charged exciton-plasmon polaritons, as well as offer routes toward realization of charged polaritonic devices at ambient conditions.
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| 17. |
- Zhao, Bing, 1990, et al.
(författare)
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A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe 5 GeTe 2 /Graphene Heterostructure
- 2023
-
Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 35:16
-
Tidskriftsartikel (refereegranskat)abstract
- The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5GeTe2/graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5GeTe2 along with the presence of negative spin polarization at the Fe5GeTe2/graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
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| 18. |
- Zhao, Bing, 1990, et al.
(författare)
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Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
- 2020
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 117:24
-
Tidskriftsartikel (refereegranskat)abstract
- The efficient generation and control of spin polarization via charge-spin conversion in topological semimetals are desirable for future spintronic and quantum technologies. Here, we report the charge-spin conversion (CSC) signals measured in a Weyl semimetal candidate WTe2-based hybrid graphene device with a geometrical design. Notably, the geometrical angle of WTe2 on the graphene spin-valve channel yields contributions to symmetric and anti-symmetric CSC signal components. The spin precession measurements of the CSC signal at different gate voltages and ferromagnet magnetization show the robustness of the CSC in WTe2 at room temperature. These results can be useful for the design of heterostructure devices and in the architectures of two-dimensional spintronic circuits.
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| 19. |
- Zhao, Bing, 1990, et al.
(författare)
-
Electrically controlled spin-switch and evolution of Hanle spin precession in graphene
- 2019
-
Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 6:3
-
Tidskriftsartikel (refereegranskat)abstract
- Next generation of spintronic devices aims to utilize the spin-polarized current injection and transport to control the magnetization dynamics in the spin logic and memory technology. However, the detailed evolution process of the frequently observed bias current-induced sign change phenomenon of the spin polarization has not been examined in details and the underlying microscopic mechanism is not well understood. Here, we report the observation of a systematic evolution of the sign change process of Hanle spin precession signal in the graphene nonlocal spintronic devices at room temperature. By tuning the interface tunnel resistances of the ferromagnetic contacts to graphene, different transformation processes of Hanle spin precession signal are probed in a controlled manner by tuning the injection bias current/voltage. Detailed analysis and first-principles calculations indicate a possible magnetic proximity and the energy dependent electronic structure of the ferromagnet-graphene interface can be responsible for the sign change process of the spin signal and open a new perspective to realize a spin-switch at very low bias-current or voltage.
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| 20. |
- Zhao, Bing, 1990, et al.
(författare)
-
Observation of charge to spin conversion in Weyl semimetal WTe2 at room temperature
- 2020
-
Ingår i: Physical Review Research. - 2643-1564. ; 2:1
-
Tidskriftsartikel (refereegranskat)abstract
- The discovery of topological Weyl semimetals has revealed opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, Weyl semimetals with strong spin-orbit coupling, broken inversion symmetry, and novel spin textures are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here, we report a direct experimental observation of large spin Hall and inverse spin Hall effects in the Weyl semimetal WTe2 at room temperature obeying the Onsager reciprocity relation. We demonstrate the detection of a pure spin current generated by the spin Hall phenomenon in WTe2 by making a van der Waals heterostructure with graphene, taking advantage of its long spin coherence length and spin transmission at the heterostructure interface. These experimental findings, well supported by ab initio calculations, show a large charge-spin conversion efficiency in WTe2, which can pave the way for the utilization of spin-orbit-induced phenomena in spintronic memory and logic circuit architectures.
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| 21. |
- Zhao, Bing, 1990, et al.
(författare)
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Strong perpendicular anisotropic ferromagnet Fe 3 GeTe 2 /graphene van der Waals heterostructure
- 2023
-
Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 56:9
-
Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional magnets offer a new platform for exploring fundamental properties in van der Waals (vdW) heterostructures and their device applications. Here, we investigated heterostructure devices of itinerant metallic vdW ferromagnet Fe3GeTe2 (FGT) with monolayer chemical vapor deposited graphene. The anomalous Hall effect measurements of FGT Hall-bar devices exhibit robust ferromagnetism with strong perpendicular anisotropy at low temperatures. The electrical transport properties measured in FGT/graphene heterostructure devices exhibit a tunneling transport with weak temperature dependence. We assessed the suitability of such FGT/graphene heterostructures for spin injection and detection and investigated the presence of FGT on possible spin absorption and spin relaxation in the graphene channel. These findings will be useful for engineering spintronic devices based on vdW heterostructures.
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