| 1. |
- Ievtushenko, A, et al.
(författare)
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Ultraviolet Detectors Based on ZnO : N Thin Films with Different Contact Structures
- 2008
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Ingår i: Acta Physica Polonica. A. - 0587-4246 .- 1898-794X. ; 114:5, s. 1123-1129
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Tidskriftsartikel (refereegranskat)abstract
- Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by do magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at lambda = 390 nm and the time constant of photoresponse about 10 mu s for Al/ZnO:N/Al structures with 4 mu m interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio approximate to 10(2) at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
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| 2. |
- Karpyna, V A, et al.
(författare)
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Electron field emission from ZnO self-organized nanostructures and doped ZnO : Ga nanostructured films
- 2009
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0959-8324 .- 0026-2692. ; 40:2, s. 229-231
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Tidskriftsartikel (refereegranskat)abstract
- Self-organized ZnO nanostructures were grown by thermal decomposition of metalorganic precursors as well as by carbothermal reduction process. Nanostructured undoped and gallium-doped ZnO nanostructured films were deposited by plasma-enhanced chemical vapor deposition from metalorganic compounds. Electron field emission follows Fowler-Nordheim equation. Efficient electron emission was obtained from self-organized nanorstructures due to their geometric shape. Enhanced field emission from ZnO:Ga nanorstructured films in comparison with undoped ZnO films is obliged to lowering work function at doping by gallium.
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| 3. |
- Ievtushenko, A., et al.
(författare)
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Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures
- 2018
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Ingår i: Superlattices and Microstructures. - : ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD. - 0749-6036 .- 1096-3677. ; 117, s. 121-131
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Tidskriftsartikel (refereegranskat)abstract
- ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 degrees C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 degrees C) is more favorable for p-type doping of ZnO. (C) 2018 Elsevier Ltd. All rights reserved.
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