| 1. |
- Andersson, Dag, et al.
(författare)
-
COSIVU - Compact, smart and reliable drive unit for fully electric vehicles
- 2016
-
Ingår i: 2016 Pan Pacific Microelectronics Symposium (Pan Pacific). - : Institute of Electrical and Electronics Engineers Inc.. - 9780988887398
-
Konferensbidrag (refereegranskat)abstract
- COSIVU is a three year collaborative research project that ended in September 2015 and which has been funded within the European Green Car Initiative (now the European Green Vehicle Initiative). COSIVU addresses one of the most critical technical parts in fully electrical vehicles (FEV) besides the energy storage system: the mechatronic drive-train unit. The COSIVU project has delivered a new system architecture for multiple wheel drive-trains by a smart, compact and durable single-wheel drive unit with integrated electric motor, full silicon carbide (SiC) power electronics (switches and diodes), a novel control and health monitoring module with wireless communication, and an advanced ultra-compact cooling solution. DfR utilizing FEM simulations ensures first time right solutions. This paper presents the main results including the architecture of the drive train solution as well as the modular design of the inverter based on Inverter Building Blocks, one per phase. Performance tests are presented here for the first time for both the heavy duty commercial vehicle solution performed in a test rig by Volvo, and the tests of the COSIVU solution adapted to a passenger car done by Elaphe.
|
|
| 2. |
- Brinkfeldt, Klas, et al.
(författare)
-
Design and Fabrication of a SiC-Based Power Module with Double-Sided Cooling for Automotive Applications
- 2016
-
Ingår i: Lecture Notes in Mobility. - Cham : Springer International Publishing. - 2196-5544 .- 2196-5552. ; , s. 157-171, s. 157-172
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The electrification of drive trains combined with special requirements of the automotive and heavy construction equipment applications drives the development of small, highly integrated and reliable power inverters. To minimize the volume and increase the reliability of the power switching devices a module consisting of SiC devices with double sided cooling capability has been developed. There are several benefits related to cooling the power devices on both sides. The major improvement is the ability to increase the power density, and thereby reduce the number of active switching devices required which in turn reduces costs. Other expected benefits of more efficient cooling are reductions in volume and mass per power ratio. Alternatively, improved reliability margins due to lower temperature swings during operation are can be expected. Removing the wire bonds on the top side of the devices is expected to improve the reliability regardless, since wire bonds are known to be one of the main limitations in power switching devices. In addition, it is possible to design the package with substantially lower inductance, which can allow faster switching of the devices. In this paper the design, simulations and fabrication process of a double sided SiC-based power module are presented.
|
|
| 3. |
- Brinkfeldt, Klas, et al.
(författare)
-
Modeling of SiC power modules with double sided cooling
- 2014
-
Ingår i: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014. - : IEEE Computer Society. - 9781479947904
-
Konferensbidrag (refereegranskat)abstract
- Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles.
|
|
| 4. |
|
|
| 5. |
- Brinkfeldt, Klas, et al.
(författare)
-
Thermo-Mechanical Simulations of SiC Power Modules with Single and Double Sided Cooling
- 2015
-
Ingår i: 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015. - : Institute of Electrical and Electronics Engineers Inc.. - 9781479999491 - 9781479999507 ; , s. 1 - 7
-
Konferensbidrag (refereegranskat)abstract
- Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were 141 °C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 30/00 maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 30/00 increase in creep strain per cycle.
|
|
| 6. |
- Otto, Alexander, et al.
(författare)
-
Reliability investigation on SiC BJT power module
- 2016
-
Ingår i: PCIM Europe 2016. - : Institute of Electrical and Electronics Engineers Inc.. - 9783800741861 ; , s. 1063-1071
-
Konferensbidrag (refereegranskat)abstract
- In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version.
|
|
| 7. |
|
|
