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- Rinio, Markus, 1967-, et al.
(författare)
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Improvement of multicrystalline silicon solar cells by a low temperature anneal after emitter difusion
- 2011
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 19, s. 165-169
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Tidskriftsartikel (refereegranskat)abstract
- The influence of an annealing step at about 500 degree celsius after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using different annealing durations and temperatures. The efficiency of the cells was measured and detailed light beam induced current measurements were performed. These show that mainly areas with high contents of precipitates near the crucible walls are affected by the anneal. An efficiency increase from 14.5 to 15.4% by a 2h anneal at 500 degree celsius was observed. The effect seems to be more likely external than internal gettering.
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- Rinio, Markus, 1967-, et al.
(författare)
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Recombination in ingot cast siliconsolar cells
- 2011
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 208:4, s. 760-768
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Tidskriftsartikel (refereegranskat)abstract
- Minority carrier recombination is studied in multicrystalline ingot cast silicon solar cells. The normalized recombination strength G of dislocations is obtained by correlating topogramsof the internal quantum efficiency (IQE) with those of the dislocation densityr.G is obtained by fitting an extended theory of Donolato to the experimental data. The measured G-values vary significantly between adjacent dislocation clusters and correlate with the spatial pattern of the dislocations. All G-values are strongly dependent on the parameters of the solar cell process. The influence of phosphorus diffusion and hydrogenation is shown. After solidification of the silicon, impurities from the crucible enter the ingot and deteriorate its border regions during cooling to room temperature. These deteriorated border regions can be significantly improved byan additional low temperature anneal that is applied after phosphorus diffusion. The experiments indicate that the mechanism of the anneal is external phosphorus gettering into the emitter.
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