| 1. |
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| 2. |
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| 3. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Control of spin functionality in ZnMnSe-based structures : Spin switching versus spin alignment
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:11, s. 1700-
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Tidskriftsartikel (refereegranskat)abstract
- The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 4. |
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| 5. |
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| 6. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Exciton Spin Manipulation in ZnMnSe-Based Structures
- 2003
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Konferensbidrag (refereegranskat)abstract
- Strong effect of structural design on spin functionality is observed in quantum structures based on II-VI semiconductors. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se diluted magnetic semiconductor (DMS) as a spin manipulator. This is evident from the polarization of photoluminescence related to a spin detector (an adjacent nonmagnetic quantum well (QW)) measured under the resonant excitation of the spin-up and spin-down states of the DMS, which is identical in value but opposite in sign. The achieved spin switching is suggested to reflect fast carrier diffusion from the DMS due to the absence of an energy barrier between the upper spin state of the DMS layer and the QW. On the other hand, the spin alignment is accomplished in the tunneling structures where the presence of the energy barrier inserted between a spin manipulator (i.e., a ZnMnSe/CdSe DMS superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 7. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On the spin injection in ZnMnSe/ZnCdSe heterostructures
- 2002
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Konferensbidrag (refereegranskat)abstract
- We present results from a detailed study of spin injection in thin II-VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as 10 nm. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as 10 nm. The effect of spin relaxation process on spin injection is also closely examined.
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| 8. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Resonant suppression of exciton spin relaxation in Zn0.96Mn0.04Se/CdSe superlattices
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:10, s. 7352-
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Tidskriftsartikel (refereegranskat)abstract
- Spin relaxation processes in strained Zn0.96Mn0.04Se/CdSe superlattices are studied in detail by using hot photoluminescence combined with tunable excitation spectroscopy. A drastic enhancement in occupation of the upper-lying |+1/2,-3/2> state of the heavy-hole excitons is observed when excitation photon energy is resonantly tuned near an integer number of the LO phonon energy above the |+1/2,-3/2> state. Assuming the Boltzmann distribution between the excitonic states, the spin temperature of the excitons is deduced to be as high as 85 K, well above the lattice temperature of 2 K. The observed behavior provides experimental evidence for a surprisingly strong suppression of spin relaxation from the upper spin-split excitonic branch for small values of wave vector.
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| 9. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:12, s. 2196-
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Tidskriftsartikel (refereegranskat)abstract
- Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes.
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| 10. |
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| 11. |
- Chen, Weimin, 1959-, et al.
(författare)
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Efficient spin depolarization in ZnCdSe spin detector : an important factor limiting optical spin injection efficiency in ZnMnSe/CdZnSe spin light-emitting structures
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 5260-
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Tidskriftsartikel (refereegranskat)abstract
- Spin depolarization of a ZnCdSe quantum-well spin detector (SD) in ZnMnSe/ZnCdSe light-emitting quantum structures is investigated by cw and time-resolved optical orientation spectroscopy. It is shown that spin depolarization is governed by three distinct spin relaxation processes with the corresponding polarization decay times of 850, 30, and <10 ps. The dominant and the fastest process is attributed to spin relaxation accompanying energy relaxation of hot excitons (and hot carriers) within the SD, providing evidence that it can be an important source of spin loss, leading to the observed limited efficiency of optical spin injection in the structures.
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| 12. |
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| 13. |
- Ivanov, S.V., et al.
(författare)
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MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells
- 2000
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 214, s. 109-114
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Tidskriftsartikel (refereegranskat)abstract
- We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers.
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| 14. |
- Jmerik, V.N., et al.
(författare)
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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
- 2010
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Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH. - 1862-6300. ; 207:6, s. 1313-1317
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Tidskriftsartikel (refereegranskat)abstract
- We have demonstrated optically pumped room-temperature pulse lasing at 300.4 nm from an AlGaN-based multiple-quantum-well (MQW) structure grown by plasma-assisted molecular beam epitaxy on a c-sapphire substrate. The lasing was achieved at the threshold peak power of similar to 12 MW/cm(2). The MQW structure involved AlGaN/AlN short-period super-lattices to decrease the threading dislocation densities from 10(11) down to 10(9)-10(10) cm(-2). Studies of time-resolved photoluminescence (TRPL) spectra and cw PL temperature dependences (10-300K) of different MQW structures, as well as numerical calculations of the optical gain and confinement in the laser structure allowed us to conclude about the optimum design of AlGaN-based MQW structures for the lower threshold UV lasing.
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| 15. |
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| 16. |
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| 17. |
- Shubina, Tatiana, et al.
(författare)
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Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:20
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Tidskriftsartikel (refereegranskat)abstract
- We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnOZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. © 2007 American Institute of Physics.
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| 18. |
- Terentev, Ya. V., et al.
(författare)
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Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers
- 2002
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 229:2, s. 765-768
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Tidskriftsartikel (refereegranskat)abstract
- We report on effective injection of spin-oriented carriers from a semimagnetic semiconductor structure to a non-magnetic ZnCdSe/ZnSe quantum well (QW). A short-period ZnMnSe/CdSe fractional monolayer superlattice was used as a spin injector. The carriers are photo-generated in the semimagnetic region, spin-polarized via the effect of giant Zeeman splitting and then injected into the non-magnetic QW. The spin injection efficiency was estimated by circular polarization measurements of recombination emission from the QW. The maximal detected degree of the spin polarization is about 25%.
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| 19. |
- Toropov, A. A., et al.
(författare)
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Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
- 2004
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Ingår i: Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4. - physica status solidi (c), Vol. 1, Issue 4 : WileyVCH. ; , s. 847-850
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Konferensbidrag (refereegranskat)abstract
- We present a time-resolved experimental study of excitonic magnetic polaron (EMP) dynamics in type II quantum wells ZnMnSe/ZnSSe. Two photoluminescence peaks were observed, which reflects coexistence of localized excitons and EMPs in the same sample. This was possible due to the competition of two localization mechanisms - magnetic localization of heavy holes in the ZnMnSe layers and non-magnetic localization of electrons in the ZnSSe layers.
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| 20. |
- Toropov, A. A., et al.
(författare)
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InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
- 2004
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Ingår i: 11th International Conference on II-VI Compounds,2003. - : WileyVCH. ; , s. 704-
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Konferensbidrag (refereegranskat)abstract
- Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.
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| 21. |
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| 22. |
- Toropov, A.A., et al.
(författare)
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Magneto-photoluminescence studies of diluted magnetic semiconductor type-II quantum wells ZnMnSe/ZnSSe
- 2003
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Ingår i: Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002. ; , s. 352-354
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Konferensbidrag (refereegranskat)abstract
- Magneto-photoluminescence (PL) has been studied in type II Zn1-xMnxSe/ZnSySe1-y multiple quantum wells (QWs) with the Mn content x between 0.03 and 0.15. Two PL lines are observed in the samples with x equal to 0.05 and 0.15. The lines are attributed to the excitons of two different types, coexisting in the QWs. At least one of them is associated with the formation of an exciton magnetic polaron. © 2002 Elsevier Science B.V. All rights reserved.
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| 23. |
- Toropov, A. A., et al.
(författare)
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Magnetooptical studies of CdSe/(Zn,Mn)Se semimagnetic nanostructures
- 2000
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Ingår i: 8th International Symposium Nanostructures: Physics Technology,2000. - : Ft. Belvoir Defense Technical Information Center. ; , s. 440-443
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Konferensbidrag (refereegranskat)abstract
- In conclusion the performed magneto-PL measurements exhibit fonrmation of 0D excitons in CdSe/(Zn,Mn)Se nanostructures. The excitonic states forming the inhomogeneously broadened emission band differ both in their energy (due to fluctuations in the sizes and compositions among the localization sites) and in magnetic properties (most probably, due to the effect of Mn ions clustering in the nearby regions). The structure potential for spin-related optoelectronic applications is demonstrated, owing to almost complete circular polarization of the emitted light within the wide spectral range (about 1OO meV) at moderate magnetic fields.
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| 24. |
- Toropov, A. A., et al.
(författare)
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ZnMnSe/ZnSSe Type-II semimagnetic superlattices : Growth and magnetoluminescence properties
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:11, s. 1288-1293
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Tidskriftsartikel (refereegranskat)abstract
- A ZnSSe/ZnMnSe type-II semimagnetic superlattice was pseudomorphically grown via molecular beam epitaxy on a GaAs substrate. The superlattice-layer thicknesses and compositions were chosen so that compressive strains in the ZnMnSe layer compensated tensile strains in the ZnSSe layer. The photoluminescence spectra in an external magnetic field demonstrate the effect of giant Zeeman splitting of an exciton. Simulation of the luminescence-line shift in a magnetic field allowed us to determine more accurately the band offsets at the ZnSSe/ZnMnSe interface.
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| 25. |
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| 26. |
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| 27. |
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| 28. |
- Shubina, Tatiana, et al.
(författare)
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Optical properties of GaN/AlGaN quantum wells with inversion domains
- 2003
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Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 195:3, s. 537-542
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Tidskriftsartikel (refereegranskat)abstract
- Two-band photoluminescence (PL) and respective absorption and reflection features are observed in GaN/AlGaN MBE-grown quantum well (QW) structures of dominant N polarity with inversion domains (IDs). The PL bands are related to transitions in the regions of different polarity, characterized by different strain and electric fields. A micro-PL study reveals sharp and narrow (1.5-2.5 meV) PL lines placed between the bands, which are tentatively attributed to recombination at localization sites associated with intersections of the QWs with the domains. Additionally, we demonstrate that the ID formation decreases the overall strength of the intrinsic electric fields in the QW structures.
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| 29. |
- Tkachman, M.G., et al.
(författare)
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Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE
- 2003
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:5, s. 532-536
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Tidskriftsartikel (refereegranskat)abstract
- Optical properties of GaN layers grown by the molecular-beam epitaxy (MBE) and chloride-hydride vapor-phase epitaxy (CHVPE) have been studied, and the quality of two types of samples has been compared. The photoluminescence spectra have an excitonic nature for both types of layers. To determine precisely the nature of exciton transitions, the reflectance spectra were studied. A key point was the investigation of phonon-assisted exciton luminescence, which provides information on the density distribution of the exciton states. Temperature dependences of the exciton transition energy and the ratio of intensities of one- and two-phpnon replicas were studied. The high quality of both types of layers has been confirmed, though the concentration of acceptors in MBE-grown samples is higher than in CHVPE samples. © 2003 MAIK "Nauka/Interperiodica".
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| 30. |
- Choubina, Tatiana, 1950-, et al.
(författare)
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Slow light in GaN
- 2008
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Ingår i: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008. ; , s. 257-
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Konferensbidrag (refereegranskat)
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