| 1. |
- Briley, Chad, et al.
(författare)
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Effects of annealing and conformal alumina passivation on anisotropy and hysteresis of magneto-optical properties of cobalt slanted columnar thin films
- 2017
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Ingår i: Applied Surface Science. - : ELSEVIER SCIENCE BV. - 0169-4332 .- 1873-5584. ; 421, s. 320-324
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Tidskriftsartikel (refereegranskat)abstract
- We present magneto-optical dielectric tensor data of cobalt and cobalt oxide slanted columnar thin films obtained by vector magneto-optical generalized ellipsometry. Room-temperature hysteresis magnetization measurements were performed in longitudinal and polar Kerr geometries on samples prior to and after a heat treatment process with and without a conformal Al2O3 passivation coating. The samples have been characterized by generalized ellipsometry, scanning electron microscopy, and Raman spectroscopy in conjuncture with density functional theory. We observe strongly anisotropic hysteresis behaviors, which depend on the nanocolumn and magnetizing field orientations. We find that deposited cobalt films that have been exposed to heat treatment and subsequent atmospheric oxidation into Co3O4, when not conformally passivated, reveal no measurable magneto-optical properties while cobalt films with passivation coatings retain highly anisotropic magneto-optical properties (C) 2016 Published by Elsevier B.V.
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| 2. |
- Hilfiker, Matthew, et al.
(författare)
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Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (0≤?≤10≤x≤1)
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:5
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Tidskriftsartikel (refereegranskat)abstract
- Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure alpha-(AlxGa1-x)(2)O-3 thin films (0 <= x <= 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular (b(Eg,⊥) = 1.31 eV) and parallel (b(Eg,||) = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between alpha-Ga2O3 and alpha-Al2O3, respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in alpha-Ga2O3 whereas for alpha-Al2O3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M-1 type in alpha-Ga2O3 to M-0 type van Hove singularity in alpha-Al2O3.
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| 3. |
- Hilfiker, Matthew, et al.
(författare)
-
Anisotropic dielectric functions, band-to-band transitions, and critical points in alpha-Ga2O3
- 2021
-
Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:6
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Tidskriftsartikel (refereegranskat)abstract
- We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an alpha -Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73eV to 8.75eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M-0-type van Hove singularities for polarization perpendicular to the c axis, E 0 , perpendicular to = 5.46 ( 6 ) eV and E 0 , perpendicular to = 6.04 ( 1 ) eV, and one direct band-to-band transition with M-1-type van Hove singularity for polarization parallel to E 0 , | | = 5.44 ( 2 ) eV. We further identify excitonic contributions with a small binding energy of 7meV associated with the lowest ordinary transition and a hyperbolic exciton at the M-1-type critical point with a large binding energy of 178meV.
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| 4. |
- Hilfiker, Matthew, et al.
(författare)
-
Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic -(AlxGa1-x)(2)O-3 (x 0.21) films
- 2019
-
Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:23
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Tidskriftsartikel (refereegranskat)abstract
- A set of monoclinic -(AlxGa1-x)(2)O-3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented -Ga2O3 substrates for compositions x0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5eV-9.0eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for -Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in accordance with the much larger fundamental band to band transition energies of Al2O3 regardless of crystal symmetry. The observed increase in the lowest band to band transition energy is in excellent agreement with recent theoretical predictions. The most important observation is that charge confinement in heterostructures will strongly depend on the growth condition due to the strongly anisotropic properties of the band to band transitions.
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| 5. |
- Hilfiker, Matthew, et al.
(författare)
-
Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4
- 2022
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:13
-
Tidskriftsartikel (refereegranskat)abstract
- We report the elevated temperature (22 degrees C <= T <= 600 degrees C) dielectric function properties of melt grown single crystal ZnGa2O4 using a spectroscopic ellipsometry approach. A temperature dependent Cauchy dispersion analysis was applied across the transparent spectrum to determine the high-frequency index of refraction yielding a temperature dependent slope of 3.885(2) x 10(-5)K(-1). A model dielectric function critical point analysis was applied to examine the dielectric function and critical point transitions for each temperature. The lowest energy M-0-type critical point associated with the direct bandgap transition in ZnGa2O4 is shown to red-shift linearly as the temperature is increased with a subsequent slope of -0.72(4) meV K-1. Furthermore, increasing the temperature results in a reduction of the excitonic amplitude and increase in the exciton broadening akin to exciton evaporation and lifetime shortening. This matches current theoretical understanding of excitonic behavior and critically provides justification for an anharmonic broadened Lorentz oscillator to be applied for model analysis of excitonic contributions.
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| 6. |
- Hilfiker, Matthew, et al.
(författare)
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High-frequency and below bandgap anisotropic dielectric constants in alpha-(AlxGa1-x)(2)O-3 (0 <= x <= 1)
- 2021
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 119:9
-
Tidskriftsartikel (refereegranskat)abstract
- A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum alpha-(AlxGa1-x)(2)O-3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (epsilon(infinity,perpendicular to)) and parallel (epsilon(infinity,parallel to)) to the thin film c-axis. The optical birefringence is negative throughout the composition range, and the overall index of refraction substantially decreases upon incorporation of Al. We find small bowing parameters of the highfrequency dielectric constants with b(perpendicular to) = 0:386 and b(parallel to) = 0:307. Published under an exclusive license by AIP Publishing.
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| 7. |
- Hilfiker, Matthew, et al.
(författare)
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Zinc gallate spinel dielectric function, band-to-band transitions, and Gamma-point effective mass parameters
- 2021
-
Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:13
-
Tidskriftsartikel (refereegranskat)abstract
- We determine the dielectric function of the emerging ultrawide bandgap semiconductor ZnGa2O4 from the near-infrared (0.75eV) into the vacuum ultraviolet (8.5eV) spectral regions using spectroscopic ellipsometry on high quality single crystal substrates. We perform density functional theory calculations and discuss the band structure and the Brillouin zone Gamma-point band-to-band transition energies, their transition matrix elements, and effective band mass parameters. We find an isotropic effective mass parameter (0.24m(e)) at the bottom of the Gamma-point conduction band, which equals the lowest valence band effective mass parameter at the top of the highly anisotropic and degenerate valence band (0.24m(e)). Our calculated band structure indicates the spinel ZnGa2O4 is indirect, with the lowest direct transition at the Gamma-point. We analyze the measured dielectric function using critical-point line shape functions for a three-dimensional, M-0-type van Hove singularity, and we determine the direct bandgap with an energy of 5.27(3) eV. In our model, we also consider contributions from Wannier-Mott type excitons with an effective Rydberg energy of 14.8meV. We determine the near-infrared index of refraction from extrapolation (1.91) in very good agreement with results from recent infrared ellipsometry measurements (root epsilon(infinity)= 1.94) [M. Stokey, Appl. Phys. Lett. 117, 052104 (2020)]. Published under license by AIP Publishing.
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| 8. |
- Kilic, Ufuk, et al.
(författare)
-
Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
- 2018
-
Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 124:11
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Tidskriftsartikel (refereegranskat)abstract
- WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV, and from multiple samples were utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by the density functional theory. The surface roughness was investigated using atomic force microscopy, and compared with the effective roughness as seen by the spectroscopic ellipsometry. Published by AIP Publishing.
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| 9. |
- Kilic, Ufuk, et al.
(författare)
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Tunable plasmonic resonances in Si-Au slanted columnar heterostructure thin films
- 2019
-
Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 9
-
Tidskriftsartikel (refereegranskat)abstract
- We report on fabrication of spatially-coherent columnar plasmonic nanostructure superlattice-type thin films with high porosity and strong optical anisotropy using glancing angle deposition. Subsequent and repeated depositions of silicon and gold lead to nanometer-dimension subcolumns with controlled lengths. We perform generalized spectroscopic ellipsometry measurements and finite element method computations to elucidate the strongly anisotropic optical properties of the highly-porous Si-Au slanted columnar heterostructures. The occurrence of a strongly localized plasmonic mode with displacement pattern reminiscent of a dark quadrupole mode is observed in the vicinity of the gold subcolumns. We demonstrate tuning of this quadrupole-like mode frequency within the near-infrared spectral range by varying the geometry of Si-Au slanted columnar heterostructures. In addition, coupled-plasmon-like and inter-band transition-like modes occur in the visible and ultra-violet spectral regions, respectively. We elucidate an example for the potential use of Si-Au slanted columnar heterostructures as a highly porous plasmonic sensor with optical read out sensitivity to few parts-per-million solvent levels in water.
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| 10. |
- Knight, Sean, et al.
(författare)
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Electron effective mass in Sn-doped monoclinic single crystal beta-gallium oxide determined by mid-infrared optical Hall effect
- 2018
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 112:1
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Tidskriftsartikel (refereegranskat)abstract
- The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal beta-Ga2O3 is experimentally determined by the mid-infrared optical Hall effect to be (0.2846 +/- 0.013)m(0) combining investigations on (010) and ((2) over bar 01) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped beta-Ga2O3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m(0). Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results. Published by AIP Publishing.
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| 11. |
- Knight, Sean, et al.
(författare)
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Infrared-active phonon modes in single-crystal thorium dioxide and uranium dioxide
- 2020
-
Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 127:12
-
Tidskriftsartikel (refereegranskat)abstract
- The infrared-active phonon modes, in single-crystal samples of thorium dioxide (ThO2) and uranium dioxide (UO2), were investigated using spectroscopic ellipsometry and compared with density functional theory. Both ThO2 and UO2 are found to have one infrared-active phonon mode pair [consisting of one transverse optic (TO) and one associated longitudinal optic (LO) mode], which is responsible for the dominant features in the ellipsometric data. At room temperature, our results for the mode pairs resonant frequencies and broadening parameters are comparable with previous reflectance spectroscopy characterizations and density functional theory predictions. For ThO2, our ellipsometry and density function theory results both show that the LO mode broadening parameter is larger than the TO mode broadening. This signifies mode anharmonicity, which can be attributed to the intrinsic phonon-phonon interaction. In addition to the main mode pair, a broad low-amplitude impurity-like vibrational mode pair is detected within the reststrahlen band for both ThO2 and UO2. Elevated temperature measurements were performed for ThO2 in order to study the mechanisms by which the phonon parameters evolve with increased heat. The observed change in the TO resonant frequency is in excellent agreement with previous density functional calculations, which only consider volume expansion of the crystal lattice. This suggests that the temperature-dependent change in the TO frequency is primarily due to volume expansion. The change in the main mode pairs broadening parameters is nearly linear within the temperature range of this study, which indicates the intrinsic anharmonic scattering (via cubic anharmonicities) as the main decay mechanism. Published under license by AIP Publishing.
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| 12. |
- Knight, Sean Robert, et al.
(författare)
-
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
- 2024
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 124:3
-
Tidskriftsartikel (refereegranskat)abstract
- The anisotropic permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate, Lu2SiO5 (LSO), have been determined in the terahertz spectral range. Using terahertz generalized spectroscopic ellipsometry (THz-GSE), we obtained the THz permittivities along the a, b, and c? crystal directions, which correspond to the ea; eb, and ec? on-diagonal tensor elements. The associated off diagonal tensor element eac? was also determined experimentally, which is required to describe LSO's optical response in the monoclinic a-c crystallographic plane. From the four tensor elements obtained in the model fit, we calculate the direction of the principal dielectric axes in the a-c plane. We find good agreementwhen comparing THz-GSE permittivities to the static permittivity tensors from previous infrared and density functional theory studies.
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| 13. |
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| 14. |
- Korlacki, Rafal, et al.
(författare)
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Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1-x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)
- 2022
-
Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 22:6
-
Tidskriftsartikel (refereegranskat)abstract
- The bowing of the energy of the three lowest band-to-band transitions in beta-(AlXGa1-X)2O3 alloys is resolved using a combined density-functional theory (DFT) and generalized spectroscopic ellipsometry approach. The DFT calculations of the electronic band structure of both beta-Ga2O3 and theta-Al2O3 allow the linear portion of the energy shift in the alloys to be extracted, and provide a method for quantifying the role of coherent strain present in the beta-(AlXGa1-X)2O3 thin films on (010) beta-Ga2O3 substrates. The energies of band-to-band transitions are obtained using the spectroscopic ellipsometry eigenpolarization model approach [A. Mock et al., Phys. Rev. B 95, 165202 (2017)]. After subtracting the effects of strain, which also induces additional bowing and after subtraction of the linear portion of the energy shift due to alloying, the bowing parameters associated with the three lowest band-to-band transitions in monoclinic beta-(AlXGa1-X)2O3 are found.
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| 15. |
- Mock, Alyssa, et al.
(författare)
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Anisotropy, band-to-band transitions, phonon modes, and oxidation properties of cobalt-oxide core-shell slanted columnar thin films
- 2016
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 108:5, s. 051905-
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Tidskriftsartikel (refereegranskat)abstract
- Highly ordered and spatially coherent cobalt slanted columnar thin films (SCTFs) were deposited by glancing angle deposition onto silicon substrates, and subsequently oxidized by annealing at 475 degrees C. Scanning electron microscopy, Raman scattering, generalized ellipsometry, and density functional theory investigations reveal shape-invariant transformation of the slanted nanocolumns from metallic to transparent metal-oxide core-shell structures with properties characteristic of spinel cobalt oxide. We find passivation of Co-SCTFs yielding Co-Al2O3 core-shell structures produced by conformal deposition of a few nanometers of alumina using atomic layer deposition fully prevents cobalt oxidation in ambient and from annealing up to 475 degrees C. (C) 2016 AIP Publishing LLC.
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| 16. |
- Mock, Alyssa, et al.
(författare)
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Band-to-band transitions and critical points in the near-infrared to vacuum ultraviolet dielectric functions of single crystal urania and thoria
- 2019
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:21
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Tidskriftsartikel (refereegranskat)abstract
- Band-to-band transition energy parameters for single-crystal actinide samples of uranium oxide and thorium oxide were determined and compared using spectroscopic ellipsometry and critical-point dielectric function analyses. Spectroscopic ellipsometry measurements from the near-infrared to the vacuum ultraviolet spectral region were used to determine the dielectric functions of uranium oxide and thorium oxide. The critical-point structure is similar between UO2 and ThO2 but strongly blue shifted for ThO2. We find bandgap energies of 2.1eV and 5.4eV for UO2 and ThO2, respectively.
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| 17. |
- Mock, Alyssa, et al.
(författare)
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Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic beta-Ga2O3
- 2017
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 96:24
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Tidskriftsartikel (refereegranskat)abstract
- We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic beta-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.
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| 18. |
- Schubert, Mathias, 1966-, et al.
(författare)
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Longitudinal phonon plasmon mode coupling in β-Ga2O3
- 2019
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 114:10
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we investigate a set of n-type single crystals of monoclinic symmetry beta-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of free electron concentration.
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| 19. |
- Schubert, Mathias, et al.
(författare)
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Phonon order and reststrahlen bands of polar vibrations in crystals with monoclinic symmetry
- 2019
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 99:4
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Tidskriftsartikel (refereegranskat)abstract
- In this Rapid Communication, we present the order of the phonon modes and the appearance of the reststrahlen bands for monoclinic symmetry materials with polar lattice vibrations. Phonon modes occur in associated pairs of transverse and longitudinal optical modes, and pairs either belong to inner or outer phonon modes. Inner modes are nested within outer modes. Outer modes cause polarization-dependent reststrahlen bands. Inner modes cause polarization-independent reststrahlen bands. The directional limiting frequencies within the Born-Huang approach are bound to within outer mode frequency regions not occupied by inner mode pairs. Hence, an unusual phonon mode order can occur where both lower-frequency as well as upper-frequency limits for the directional modes can be both transverse and/or longitudinal modes. We exemplify our findings using experimental data for the recently unraveled case of monoclinic symmetry beta-Ga2O3 [Phys. Rev. B 93, 125209 (2016)] and demonstrate excellent agreement with results from density functional theory calculations.
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| 20. |
- Schubert, Mathias, et al.
(författare)
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Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry ß-Ga2O3
- 2020
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Ingår i: Gallium Oxide. - Cham : Springer. - 9783030371524 - 9783030371555 - 9783030371531 ; , s. 501-534
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- We present and discuss the complete set of infrared-active phonon modes in monoclinic-symmetry crystal modification gallium oxide (gallia, ββ-Ga2O3). The phonon mode set is obtained from a comprehensive analysis of generalized spectroscopic ellipsometry data in the farinfrared and infrared spectral regions investigating various n-type electrically conductive single crystal samples with different free electron volume density parameters cut under different orientations. The analysis of the ellipsometry data is performed using an eigendielectric displacement vector summation (EDVS) approach. In this approach, the effect of the free charge carriers onto the lattice modes of intrinsic ββ-Ga2O3 are removed by calculation. Density functional theory calculations are performed in the general gradient approximation and all phonon modes at the Brillouin-center and their displacement direction dependencies are obtained. Transverse and longitudinal optical phonon mode parameters polarized within the monoclinic plane as well as perpendicular to the monoclinic plane agree excellently between experiment and theory. We also present and discuss the directional limiting frequency parameters within the monoclinic plane, the shape and anisotropy of the reststrahlen band, and the order of the phonon modes in semiconductors with polar phonon modes and monoclinic crystal structure. We further present and discuss the effect of coupling of longitudinal optical phonons with free charge carriers, leading to longitudinal-phonon-plasmon coupled modes. We reveal that the coupled modes, which affect electric and thermal transport, change amplitude, frequency, and direction within the monoclinic plane as a function of free electron concentration. Finally, we show optical Hall effect measurements, and provide experimentally determined effective electron mass parameters in ββ-Ga2O3 for moderately-doped n-type samples.
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| 21. |
- Schubert, Mathias, et al.
(författare)
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Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:10
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Tidskriftsartikel (refereegranskat)abstract
- We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.
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| 22. |
- Stokey, Megan, et al.
(författare)
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Brillouin zone center phonon modes in ZnGa2O4
- 2020
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 117:5
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Tidskriftsartikel (refereegranskat)abstract
- Infrared-active lattice mode properties of melt-grown high-quality single bulk crystals of ZnGa2O4 are investigated by combined spectroscopic ellipsometry and density functional theory computation analysis. The normal spinel structure crystals are measured by spectroscopic ellipsometry at room temperature in the range of 100cm(-1)-1200cm(-1). The complex-valued dielectric function is determined from a wavenumber-by-wavenumber approach, which is then analyzed by the four-parameter semi-quantum model dielectric function approach augmented by impurity mode contributions. We determine four infrared-active transverse and longitudinal optical mode pairs, five localized impurity mode pairs, and the high frequency dielectric constant. All four infrared-active transverse and longitudinal optical mode pairs are in excellent agreement with results from our density functional theory computations. With the Lyddane-Sachs-Teller relationship, we determine the static dielectric constant, which agrees well with electrical capacitance measurements performed on similarly grown samples. We also provide calculated parameters for all Raman-active and for all silent modes and, thereby, provide a complete set of all symmetry predicted Brillouin zone center modes.
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| 23. |
- Stokey, Megan, et al.
(författare)
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Infrared-active phonon modes and static dielectric constants in α-(AlxGa1−x)2O3 (0.18 ≤ x ≤ 0.54) alloys
- 2022
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 120:11
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Tidskriftsartikel (refereegranskat)abstract
- We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(AlxGa1−x)2O3 alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al2O3 substrates with x = 0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectric constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga2O3 and α-Al2O3. The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques.
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| 24. |
- Stokey, Megan, et al.
(författare)
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Infrared dielectric functions and Brillouin zone center phonons of alpha-Ga2O3 compared to alpha-Al2O3
- 2022
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Ingår i: Physical Review Materials. - : AMER PHYSICAL SOC. - 2475-9953. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- We determine the anisotropic dielectric functions of rhombohedral alpha-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment and theory. We also compute the same information for alpha-Al2O3, the binary parent compound for the emerging alloy of alpha-(AlxGa1-x)(2)O-3, and use results from previous investigations [Schubert, Tiwald, and Herzinger, Phys. Rev. B 61, 8187 (2000)] to compare all properties among the two isostructural compounds. From both experimental and theoretical investigations, we compute the frequency shifts of all modes between the two compounds. Additionally, we calculate overlap parameters between phonon mode eigenvectors and discuss the possible evolution of all phonon modes into the ternary alloy system and whether modes may form single-mode or more complex mode behaviors.
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| 25. |
- Stokey, Megan, et al.
(författare)
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Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3
- 2021
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 129:22
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Tidskriftsartikel (refereegranskat)abstract
- A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principles calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (also known as point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution(. )A four-parameter semi-quantum model is applied to determine all 16 pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, epsilon(infinity) = 4.05 +/- 0.05. The Lyddane-Sachs-Teller relation then gives access to the static dielectric constant, epsilon(DC) = 10.55 +/- 0.07. All experimental results are in excellent agreement with our density functional theory calculations and with previously reported values, where existent. We also perform optical Hall effect measurements and determine for the unintentionally doped n-type sample a free electron density of n = (2.81 +/- 0.01) x 10(17) cm(-3), a mobility of mu = (112 +/- 3) cm(2)/(Vs), and an effective mass parameter of (0.208 +/- 0.006)m(e). Density and mobility parameters compare very well with the results of electrical Hall effect measurements. Our effective mass parameter, which is measured independently of any other experimental technique, represents the bottom curvature of the Gamma point in In2O3 in agreement with previous extrapolations. We use terahertz spectroscopic ellipsometry to measure the quasi-static response of In2O3, and our model validates the static dielectric constant obtained from the Lyddane-Sachs-Teller relation. Published under an exclusive license by AIP Publishing.
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