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Search: WFRF:(Kovarskii A. P.)

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  • Ber, B. Y., et al. (author)
  • Determination of nitrogen in silicon carbide by secondary ion mass spectrometry
  • 2004
  • In: Journal of Analytical Chemistry. - 1061-9348 .- 1608-3199. ; 59:3, s. 250-254
  • Journal article (peer-reviewed)abstract
    • The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Hallén, Anders. (1)
Ber, B. Y. (1)
Kazantsev, D. Y. (1)
Kalinina, E. V. (1)
Kovarskii, A. P. (1)
Kossov, V. G. (1)
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Yafaev, R. R. (1)
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University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2004 (1)

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