| 1. |
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| 2. |
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| 3. |
- Drexler, C, et al.
(författare)
-
Magnetic quantum ratchet effect in graphene
- 2013
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Ingår i: Nature Nanotechnology. - : Nature Publishing Group. - 1748-3387 .- 1748-3395. ; 8:2, s. 104-107
-
Tidskriftsartikel (refereegranskat)abstract
- A periodically driven system with spatial asymmetry can exhibit a directed motion facilitated by thermal or quantum fluctuations(1). This so-called ratchet effect(2) has fascinating ramifications in engineering and natural sciences(3-18). Graphene(19) is nominally a symmetric system. Driven by a periodic electric field, no directed electric current should flow. However, if the graphene has lost its spatial symmetry due to its substrate or adatoms, an electronic ratchet motion can arise. We report an experimental demonstration of such an electronic ratchet in graphene layers, proving the underlying spatial asymmetry. The orbital asymmetry of the Dirac fermions is induced by an in-plane magnetic field, whereas the periodic driving comes from terahertz radiation. The resulting magnetic quantum ratchet transforms the a.c. power into a d.c. current, extracting work from the out-of-equilibrium electrons driven by undirected periodic forces. The observation of ratchet transport in this purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other two-dimensional crystals such as boron nitride, molybdenum dichalcogenides and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field provide strong evidence for the existence of structure inversion asymmetry in graphene.
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| 4. |
- Drexler, C., et al.
(författare)
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Terahertz radiation induced edge currents in graphene
- 2011
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Ingår i: RMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves. - 9781457705090
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Konferensbidrag (refereegranskat)abstract
- We report on the observation of the terahertz radiation induced edge photogalvanic effect. The directed net electric current is generated in single layer graphene by the irradiation of the samples' edges with linearly or circularly polarized terahertz laser radiation at normal incidence. We show that the directed net electric current stems from the sample edges, which reduce locally the symmetry and result in an asymmetric scattering of carriers driven by the radiation field.
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| 5. |
- Ganichev, S.D., et al.
(författare)
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Photon helicity driven currents in graphene
- 2010
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Ingår i: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. - 9781424466573
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on the observation of photon helicity driven currents in graphene. We demonstrate that by illuminating unbiased monolayer graphene samples with terahertz (THz) laser radiation at room temperature under oblique and normal incidence causes directed electric currents. This includes currents which are solely driven by the light's helicity.
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| 6. |
- Olbrich, P., et al.
(författare)
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Terahertz radiation induced photocurrents in graphene subjected to an in-plane magnetic field
- 2012
-
Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467315975
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Konferensbidrag (refereegranskat)abstract
- We report on the observation of terahertz radiation induced photocurrents in single-layer graphene samples subjected to an in-plane magnetic field. The photosignal is observed for both, linearly and circularly polarized radiation. A remarkable effect is that the current inverts its sign not only by switching the magnetic field direction, but as well by changing the radiation helicity from left- to right-handedness. We demonstrate that the photocurrent stems from strong structure inversion asymmetry (SIA) of samples originating from the presence of substrate and/or adatoms on graphene. The analysis shows that the observed effect represents a new type of ratchet effects: magnetic field induced ratchets. A microscopic theory of the observed effect is developed being in a good qualitative agreement with the experiment. Furthermore, the experiments open a promising access to the investigation of SIA which is of particular interest for the understanding of graphene properties as well as applications.
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| 7. |
- Drexler, C., et al.
(författare)
-
Magnetic quantum ratchet effect in graphene
- 2013
-
Ingår i: Nature Nanotechnology. - 1748-3387 .- 1748-3395. ; 8:2, s. 104-107
-
Tidskriftsartikel (refereegranskat)abstract
- A periodically driven system with spatial asymmetry can exhibit a directed motion facilitated by thermal or quantum fluctuations(1). This so-called ratchet effect(2) has fascinating ramifications in engineering and natural sciences(3-18). Graphene(19) is nominally a symmetric system. Driven by a periodic electric field, no directed electric current should flow. However, if the graphene has lost its spatial symmetry due to its substrate or adatoms, an electronic ratchet motion can arise. We report an experimental demonstration of such an electronic ratchet in graphene layers, proving the underlying spatial asymmetry. The orbital asymmetry of the Dirac fermions is induced by an in-plane magnetic field, whereas the periodic driving comes from terahertz radiation. The resulting magnetic quantum ratchet transforms the a.c. power into a d.c. current, extracting work from the out-of-equilibrium electrons driven by undirected periodic forces. The observation of ratchet transport in this purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other two-dimensional crystals such as boron nitride, molybdenum dichalcogenides and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field provide strong evidence for the existence of structure inversion asymmetry in graphene.
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| 8. |
- Drexler, C., et al.
(författare)
-
Reststrahlen Band assisted photocurrents in graphene
- 2013
-
Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
-
Konferensbidrag (refereegranskat)abstract
- We report on the experimental and theoretical study of the Reststrahlen Band assisted photocurrents in epitaxial grown graphene on SiC. We show that excitation of graphene with infrared radiation results in a dc current. We demonstrate that photocurrent in response to linearly polarized radiation exhibit a resonance enhancement in the frequency range of the Reststrahlen Band of the SiC substrate. By contrast the photocurrent excited by circularly polarized radiation is suppressed in the same spectral range. The developed theory is in agreement with the data and reveals a strong influence of the Reststrahl Band on the high frequency transport in graphene.
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| 9. |
- Ganichev, S.D., et al.
(författare)
-
Magnetic quantum ratchet effect in graphene
- 2013
-
Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
-
Konferensbidrag (refereegranskat)abstract
- We report on the observation of magnetic quantum ratchet (MQR) effect induced by electric field of terahertz radiation in single-layer graphene samples subjected to an inplane magnetic field. We show that the dc electric current stems from the orbital asymmetry of the Dirac fermions induced by an in-plane magnetic field, while the periodic driving comes from terahertz radiation. A microscopic theory of the observed effect is developed being in a good qualitative agreement with the experiment. The observation of the ratchet transport in the purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other 2D crystals, such as boron nitride, molybdenum dichalcogenides, and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field give strong evidence for the existence of structure inversion asymmetry in graphene.
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| 10. |
- Janssen, Tjbm, et al.
(författare)
-
Towards a cryogen-free table-top primary resistance standard
- 2016
-
Ingår i: 2016 Conference on Precision Electromagnetic Measurements (Cpem 2016). - : Institute of Electrical and Electronics Engineers Inc.. - 9781467391344
-
Konferensbidrag (refereegranskat)abstract
- We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8 K and magnetic fields below 5 T. We use this system to investigate the optimisation of graphene/SiC devices for maximum breakdown current. In addition we report the first characterisation of a cryogen-free cryogenic current comparator which enables entirely cryogen-free primary resistance metrology.
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| 11. |
- Jiang, C. Y., et al.
(författare)
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Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO2 laser
- 2011
-
Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 84:12
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Tidskriftsartikel (refereegranskat)abstract
- We report the study of the helicity-driven photocurrents in graphene excited by midinfrared light of a CO(2) laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates-under oblique incidence-an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular ac Hall effect and the circular photogalvanic effect. By studying the frequency dependence of the current in graphene layers grown on the SiC substrate, we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC.
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| 12. |
- Karch, J., et al.
(författare)
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Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer
- 2010
-
Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 105:22, s. 227402-
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Tidskriftsartikel (refereegranskat)abstract
- We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates-under oblique incidence-an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed E and B fields which are, however rotating with the lights frequency.
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| 13. |
- Karch, J., et al.
(författare)
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Terahertz Radiation Driven Chiral Edge Currents in Graphene
- 2011
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Ingår i: Physical Review Letters. - : American Physical Society. - 1079-7114 .- 0031-9007. ; 107:27
-
Tidskriftsartikel (refereegranskat)abstract
- We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
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| 14. |
- Kim, Kyung Ho, 1984, et al.
(författare)
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Apparent Power Law Scaling of Variable Range Hopping Conduction in Carbonized Polymer Nanofibers
- 2016
-
Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6
-
Tidskriftsartikel (refereegranskat)abstract
- We induce dramatic changes in the structure of conducting polymer nanofibers by carbonization at 800 degrees C and compare charge transport properties between carbonized and pristine nanofibers. Despite the profound structural differences, both types of systems display power law dependence of current with voltage and temperature, and all measurements can be scaled into a single universal curve. We analyze our experimental data in the framework of variable range hopping and argue that this mechanism can explain transport properties of pristine polymer nanofibers as well.
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| 15. |
- Kim, Kyung Ho, 1984, et al.
(författare)
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Probing variable range hopping lengths by magneto conductance in carbonized polymer nanofibers
- 2018
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 8:1
-
Tidskriftsartikel (refereegranskat)abstract
- Using magneto transport, we probe hopping length scales in the variable range hopping conduction of carbonized polyacetylene and polyaniline nanofibers. In contrast to pristine polyacetylene nanofibers that show vanishing magneto conductance at large electric fields, carbonized polymer nanofibers display a negative magneto conductance that decreases in magnitude but remains finite with respect to the electric field. We show that this behavior of magneto conductance is an indicator of the electric field and temperature dependence of hopping length in the gradual transition from the thermally activated to the activation-less electric field driven variable range hopping transport. This reveals magneto transport as a useful tool to probe hopping lengths in the non-linear hopping regime.
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| 16. |
- Olbrich, P., et al.
(författare)
-
Reststrahl band-assisted photocurrents in epitaxial graphene layers
- 2013
-
Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 88:24, s. 7-
-
Tidskriftsartikel (refereegranskat)abstract
- We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.
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| 17. |
- Baker, A M R, et al.
(författare)
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Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
- 2013
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 87:4, s. 045414-
-
Tidskriftsartikel (refereegranskat)abstract
- Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.
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| 18. |
- Boschi, Alex, et al.
(författare)
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Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis
- 2023
-
Ingår i: Small. - 1613-6810 .- 1613-6829. ; 19:42
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Tidskriftsartikel (refereegranskat)abstract
- Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
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| 19. |
- Broman, S. L., et al.
(författare)
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Dihydroazulene Photoswitch Operating in Sequential Tunneling Regime: Synthesis and Single-Molecule Junction Studies
- 2012
-
Ingår i: Advanced Functional Materials. - : Wiley. - 1616-3028 .- 1616-301X. ; 22:20, s. 4249-4258
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Tidskriftsartikel (refereegranskat)abstract
- Molecular switches play a central role for the development of molecular electronics. In this work it is demonstrated that the reproducibility and robustness of a single-molecule dihydroazulene (DHA)/vinylheptafulvene (VHF) switch can be remarkably enhanced if the switching kernel is weakly coupled to electrodes so that the electron transport goes by sequential tunneling. To assure weak coupling, the DHA switching kernel is modified by incorporating p-MeSC6H4 end-groups. Molecules are prepared by Suzuki cross-couplings on suitable halogenated derivatives of DHA. The synthesis presents an expansion of our previously reported brominationeliminationcross-coupling protocol for functionalization of the DHA core. For all new derivatives the kinetics of DHA/VHF transition has been thoroughly studied in solution. The kinetics reveals the effect of sulfur end-groups on the thermal ring-closure of VHF. One derivative, incorporating a p-MeSC6H4 anchoring group in one end, has been placed in a silver nanogap. Conductance measurements justify that transport through both DHA (high resistivity) and VHF (low resistivity) forms goes by sequential tunneling. The switching is fairly reversible and reenterable; after more than 20 ON-OFF switchings, both DHA and VHF forms are still recognizable, albeit noticeably different from the original states.
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| 20. |
- Chua, C., et al.
(författare)
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- 2014
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:6, s. 3369-3373
-
Tidskriftsartikel (refereegranskat)abstract
- We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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| 21. |
- Eless, V, et al.
(författare)
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Phase coherence and energy relaxation in epitaxial graphene under microwave radiation
- 2013
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 103:9
-
Tidskriftsartikel (refereegranskat)abstract
- We have performed low-temperature magnetotransport measurements on monolayer epitaxial graphene under microwave radiation and extracted the radiation-induced effective temperatures, energy relaxation, and the dephasing times. We established that the response of the graphene sample is entirely bolometric at least up to 170 GHz. Dynamic dephasing, i.e., the time-reversal symmetry breaking effect of the ac electromagnetic field rather than mediated by heating, may become significant in the terahertz frequency range and in samples with longer phase coherence time.
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| 22. |
- Geskin, V., et al.
(författare)
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Bianthrone at a Metal Surface: Conductance Switching with a Bistable Molecule Made Feasible by Image Charge Effects
- 2015
-
Ingår i: AIP Conference Proceedings. - : AIP Publishing LLC. - 1551-7616 .- 0094-243X. ; 1642, s. 469-472
-
Konferensbidrag (refereegranskat)abstract
- Bianthrone is a sterically hindered compound that exists in the form of two non-planar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated to molecular isomerization events. Temperature dependence of the switching rate allows for an estimate of the activation energy of the process, on the order of 35-90 meV. Quantum-chemical calculations of the potential surface of neutral bianthrone and its anion, including identification of transition states, yields the isolated molecule isomerization barriers too high vs. the previous estimate, though in perfect agreement with previous experimental studies in solution. Nevertheless, we show that the attraction of the anion in the vicinity of the metal surface by its image charge can significantly alter the energetic landscape, in particular, by reducing the barrier to the values compatible with the observed switching behavior.
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| 23. |
- Ghasemi, Shima, 1993, et al.
(författare)
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Exploring the impact of select anchor groups for norbornadiene/quadricyclane single-molecule switches
- 2023
-
Ingår i: Journal of Materials Chemistry C. - 2050-7534 .- 2050-7526. ; 11:44, s. 15379-15776
-
Tidskriftsartikel (refereegranskat)abstract
- To achieve the ultimate limit of device miniaturization, it is necessary to have a comprehensive understanding of the structure–property relationship in functional molecular systems used in single-molecule electronics. This study reports the synthesis and characterization of a novel series of norbornadiene derivatives capped with thioether and thioester anchor groups. Utilizing the mechanically controllable break junction technique, the impact of these capping groups on conductance across single-molecule junctions is investigated. Among the selection of anchor groups, norbornadiene capped with thioacetate and tert-butyl groups exhibits higher conductance (G ≈ 4 × 10−4 G0) compared to methyl thioether (G ≈ 2 × 10−4 G0). Electronic transmission through the considered set of single-molecule junctions has been simulated. The computational results for electron transport across these junctions align closely with the experimental findings, with the thioacetate- and tert-butyl-substituted systems outperforming the methyl thioether-capped derivative. In terms of junction stability, the methyl thioether-capped system is the most resilient, maintaining consistent conductance even after approximately 10 000 cycles. Meanwhile, the likelihood of observing molecular plateaus in both the thioacetate- and tert-butyl-substituted systems declines over time. These findings substantially advance both the design and understanding of functional molecular systems in the realm of single-molecule electronics, particularly in the context of molecular photoswitches.
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| 24. |
- He, Hans, 1989, et al.
(författare)
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Fabrication of graphene quantum hall resistance standard in a cryogen-Table-Top system
- 2016
-
Ingår i: 2016 Conference on Precision Electromagnetic Measurements, CPEM 2016; The Westin OttawaOttawa; Canada; 10-15 July 2016. - : Institute of Electrical and Electronics Engineers Inc.. - 9781467391344 ; , s. Art no 7540516-
-
Konferensbidrag (refereegranskat)abstract
- We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.
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| 25. |
- Janssen, Tjbm, et al.
(författare)
-
Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- 2011
-
Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 83:23, s. 233402-
-
Tidskriftsartikel (refereegranskat)abstract
- We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.
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| 26. |
- Janssen, Tjbm, et al.
(författare)
-
Breakdown of the quantum Hall effect in graphene
- 2012
-
Ingår i: CPEM Digest (Conference on Precision Electromagnetic Measurements). - 0589-1485. - 9781467304399 ; , s. 510-511
-
Konferensbidrag (refereegranskat)abstract
- We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
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| 27. |
- Janssen, Tjbm, et al.
(författare)
-
Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
- 2015
-
Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 2:3, s. 035015-
-
Tidskriftsartikel (refereegranskat)abstract
- Wedemonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8Kand magnetic fields below 5 T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC.
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| 28. |
- Lara Avila, Samuel, 1983, et al.
(författare)
-
Bianthrone in a Single-Molecule Junction: Conductance Switching with a Bistable Molecule Facilitated by Image Charge Effects
- 2010
-
Ingår i: Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 114:48, s. 20686-20695
-
Tidskriftsartikel (refereegranskat)abstract
- Bianthrone is a sterically hindered compound that exists in the form of two nonplanar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated with molecular isomerization events. Temperature dependence of the switching rate allows for an estimate of the activation energy of the process, on the order of 120 +/- 50 meV. Quantum-chemical calculations of the potential energy relief of neutral bianthrone and its anion, including identification of transition states, yields the isolated molecule isomerization barriers too high vs the previous estimate, though compatible with previous experimental studies in solution. Nevertheless, we show that the attraction of the anion in the vicinity of the metal surface by its image charge can change the energetic landscape, in particular, by significantly reducing the barrier to values compatible with the observed switching behavior.
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| 29. |
- Lara Avila, Samuel, 1983, et al.
(författare)
-
Influence of Impurity Spin Dynamics on Quantum Transport in Epitaxial Graphene
- 2015
-
Ingår i: Physical Review Letters. - : AMER PHYSICAL SOC. - 1079-7114 .- 0031-9007. ; 115:10, s. 106602-
-
Tidskriftsartikel (refereegranskat)abstract
- Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localization analysis, is suppressed by an in-plane magnetic field B-parallel to, and thereby proving that it is caused at least in part by spinful scatterers. A nonmonotonic dependence of the effective decoherence rate on B-parallel to reveals the intricate role of the scatterers' spin dynamics in forming the interference correction to the conductivity, an effect that has gone unnoticed in earlier weak localization studies.
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| 30. |
- Shetty, Naveen, 1988, et al.
(författare)
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Ultralow 1/f noise in epigraphene devices
- 2024
-
Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 124:9
-
Tidskriftsartikel (refereegranskat)abstract
- We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
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| 31. |
- Shetty, Naveen, 1988, et al.
(författare)
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Ultralow 1/f noise in epigraphene devices
- 2024
-
Ingår i: Applied Physics Letters. - : American Institute of Physics Inc.. - 0003-6951 .- 1077-3118. ; 124:9
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Tidskriftsartikel (refereegranskat)abstract
- We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance. © 2024 Author(s).
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| 32. |
- Tzalenchuk, A.Y., et al.
(författare)
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Graphene and the universality of the quantum Hall effect
- 2013
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Ingår i: Proceedings of the International School of Physics "Enrico Fermi". - 1879-8195 .- 0074-784X. - 9781614993254 ; 185, s. 323-350
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Konferensbidrag (refereegranskat)abstract
- The quantum Hall effect allows the standard for resistance to be defined in terms of the elementary charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of RK=h/e2=25812.8074434(84) Ω (Mohr P. J. et al., Rev. Mod. Phys., 84 (2012) 1527), the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology, a few parts per billion, has been achieved only in silicon and III-V heterostructure devices. In this lecture we show that graphene - a single layer of carbon atoms - beats these well-established semiconductor materials as the system of choice for the realisation of the quantum resistance standard. Here we shall briefly describe graphene technology, discuss the structure and electronic properties of graphene, including the unconventional quantum Hall effect and then present in detail the route, which led to the most precise quantum Hall resistance universality test ever performed. © Società Italiana di Fisica.
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| 33. |
- Tzalenchuk, A.Y., et al.
(författare)
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Towards a quantum resistance standard based on epitaxial graphene
- 2010
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Ingår i: Nature Nanotechnology. - 1748-3387 .- 1748-3395. ; 5:3, s. 186-189
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Tidskriftsartikel (refereegranskat)abstract
- The quantum Hall effect(1) allows the international standard for resistance to be defined in terms of the electron charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R-K = h/e(2) = 25 812.807 557(18) Omega, the resistance quantum(2). Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology-a few parts per billion-has been achieved only in silicon and III-V heterostructure devices(3-5). Graphene should, in principle, be an ideal material for a quantum resistance standard(6), because it is inherently two-dimensional and its discrete electron energy levels in a magnetic field (the Landau levels(7)) are widely spaced. However, the precisions demonstrated so far have been lower than one part per million(8). Here, we report a quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene at 300 mK, four orders of magnitude better than previously reported. Moreover, by demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.
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