SwePub - sökning: WFRF:(Lars Erik Persson)

Numrering	Referens	Omslagsbild	Hitta
1.	Moberg, Christina, et al. (författare) De unga gör helt rätt när de stämmer staten 2022 Ingår i: Aftonbladet. - 1103-9000. Tidskriftsartikel (populärvet., debatt m.m.)abstract 1 620 forskare och lärare i forskarvärlden: Vi ställer oss bakom Auroras klimatkrav
2.	Ahlberg, Erik, et al. (författare) "Vi klimatforskare stödjer Greta och skolungdomarna" 2019 Ingår i: Dagens nyheter (DN debatt). - 1101-2447. Tidskriftsartikel (populärvet., debatt m.m.)abstract DN DEBATT 15/3. Sedan industrialiseringens början har vi använt omkring fyra femtedelar av den mängd fossilt kol som får förbrännas för att vi ska klara Parisavtalet. Vi har bara en femtedel kvar och det är bråttom att kraftigt reducera utsläppen. Det har Greta Thunberg och de strejkande ungdomarna förstått. Därför stödjer vi deras krav, skriver 270 klimatforskare.
3.	Björklund, Camilla, et al. (författare) Matematikkundervisning 2013 Bok (övrigt vetenskapligt/konstnärligt)abstract Denna boken är skriven av en grupp erfarna norska och svenska lärarutbildare i matematik. Boken bygger på utprövad erfarenhet - såväl egen som andras - och på aktuell, relevant forskning i matematikdidaktik. Texten väver samman matematik och matematikdidaktik, det vill säga ämnet som det undervisas i och frågor om hur ämnet kan läras och undervisas. Boken innehåller det som är absolut viktigast att få med sig i den grundläggande lärarutbildningen i matmatik.
4.	Egard, Mikael, et al. (författare) High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET 2012 Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371 Tidskriftsartikel (refereegranskat)abstract We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
5.	Engström, Gunnar, et al. (författare) Pulmonary function and atherosclerosis in the general population : causal associations and clinical implications 2024 Ingår i: European Journal of Epidemiology. - : Springer Nature. - 0393-2990 .- 1573-7284. ; 39:1, s. 35-49 Tidskriftsartikel (refereegranskat)abstract Reduced lung function is associated with cardiovascular mortality, but the relationships with atherosclerosis are unclear. The population-based Swedish CArdioPulmonary BioImage study measured lung function, emphysema, coronary CT angiography, coronary calcium, carotid plaques and ankle-brachial index in 29,593 men and women aged 50–64 years. The results were confirmed using 2-sample Mendelian randomization. Lower lung function and emphysema were associated with more atherosclerosis, but these relationships were attenuated after adjustment for cardiovascular risk factors. Lung function was not associated with coronary atherosclerosis in 14,524 never-smokers. No potentially causal effect of lung function on atherosclerosis, or vice versa, was found in the 2-sample Mendelian randomization analysis. Here we show that reduced lung function and atherosclerosis are correlated in the population, but probably not causally related. Assessing lung function in addition to conventional cardiovascular risk factors to gauge risk of subclinical atherosclerosis is probably not meaningful, but low lung function found by chance should alert for atherosclerosis.
6.	Engström, Gunnar, et al. (författare) The Swedish CArdioPulmonary BioImage Study : objectives and design 2015 Ingår i: Journal of Internal Medicine. - : Wiley. - 0954-6820 .- 1365-2796. ; 278:6, s. 645-659 Tidskriftsartikel (refereegranskat)abstract Cardiopulmonary diseases are major causes of death worldwide, but currently recommended strategies for diagnosis and prevention may be outdated because of recent changes in risk factor patterns. The Swedish CArdioPulmonarybioImage Study (SCAPIS) combines the use of new imaging technologies, advances in large-scale 'omics' and epidemiological analyses to extensively characterize a Swedish cohort of 30 000 men and women aged between 50 and 64 years. The information obtained will be used to improve risk prediction of cardiopulmonary diseases and optimize the ability to study disease mechanisms. A comprehensive pilot study in 1111 individuals, which was completed in 2012, demonstrated the feasibility and financial and ethical consequences of SCAPIS. Recruitment to the national, multicentre study has recently started.
7.	Grevholm, Barbro, et al. (författare) Lära och undervisa matematik : från förskoleklass till åk 6 2012 Bok (övrigt vetenskapligt/konstnärligt)abstract Lära och undervisa matematik - från förskoleklass till åk 6 är en grundbok i matematik och matematikämnets didaktik. Den vänder sig till lärarstuderande och till verksamma lärare som vill aktualisera sina kunskaper och ta del av den senaste forskningen samt sätta sig in i de nya kursplanerna och kunskapskraven i matematik.
8.	Kaufmann, Tobias, et al. (författare) Common brain disorders are associated with heritable patterns of apparent aging of the brain 2019 Ingår i: Nature Neuroscience. - : Nature Publishing Group. - 1097-6256 .- 1546-1726. ; 22:10, s. 1617- Tidskriftsartikel (refereegranskat)abstract Common risk factors for psychiatric and other brain disorders are likely to converge on biological pathways influencing the development and maintenance of brain structure and function across life. Using structural MRI data from 45,615 individuals aged 3-96 years, we demonstrate distinct patterns of apparent brain aging in several brain disorders and reveal genetic pleiotropy between apparent brain aging in healthy individuals and common brain disorders.
9.	Krishnaraja, Abinaya, et al. (författare) Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs 2020 Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:9, s. 2882-2887 Tidskriftsartikel (refereegranskat)abstract Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.
10.	Lind, Erik, et al. (författare) Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor 2006 Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 6:9, s. 1842-1846 Tidskriftsartikel (refereegranskat)abstract An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
11.	Andersson, Anton, et al. (författare) Design of a Foiling Optimist 2018 Ingår i: Journal of Sailboat Technology. ; 2018, s. 1-24 Tidskriftsartikel (refereegranskat)abstract Because of the successful application of hydrofoils on the America's Cup catamarans in the past two campaigns the interest in foiling sailing craft has boosted. Foils have been fitted to a large number of yachts with great success, ranging from dinghies to ocean racers. An interesting question is whether one of the slowest racing boats in the world, the Optimist dinghy, can foil, and if so, at what minimum wind speed. The present paper presents a comprehensive design campaign to answer the two questions. The campaign includes a newly developed Velocity Prediction Program (VPP) for foiling/non-foiling conditions, a wind tunnel test of sail aerodynamics, a towing tank test of hull hydrodynamics and a large number of numerical predictions of foil characteristics. An optimum foil configuration is developed and towing tank tested with satisfactory results. The final proof of the concept is a successful on the water test with stable foiling at a speed of 12 knots.
12.	Berg, Martin, et al. (författare) Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si 2016 Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 37:8, s. 966-969 Tidskriftsartikel (refereegranskat)abstract Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.
13.	Berg, Martin, et al. (författare) InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers. 2014 Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48 Tidskriftsartikel (refereegranskat)abstract Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
14.	Berg, Martin, et al. (författare) Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si 2016 Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 9781467398930 ; 2016-February Konferensbidrag (refereegranskat)abstract In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
15.	Berg, Martin, et al. (författare) Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs 2014 Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669. Konferensbidrag (refereegranskat)abstract We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
16.	Bergström, Göran, 1964, et al. (författare) Body weight at age 20 and in midlife is more important than weight gain for coronary atherosclerosis: Results from SCAPIS. 2023 Ingår i: Atherosclerosis. - : Elsevier BV. - 1879-1484 .- 0021-9150. ; 373, s. 46-54 Tidskriftsartikel (refereegranskat)abstract Elevated body weight in adolescence is associated with early cardiovascular disease, but whether this association is traceable to weight in early adulthood, weight in midlife or to weight gain is not known. The aim of this study is to assess the risk of midlife coronary atherosclerosis being associated with body weight at age 20, body weight in midlife and body weight change.We used data from 25,181 participants with no previous myocardial infarction or cardiac procedure in the Swedish CArdioPulmonary bioImage Study (SCAPIS, mean age 57 years, 51% women). Data on coronary atherosclerosis, self-reported body weight at age 20 and measured midlife weight were recorded together with potential confounders and mediators. Coronary atherosclerosis was assessed using coronary computed tomography angiography (CCTA) and expressed as segment involvement score (SIS).The probability of having coronary atherosclerosis was markedly higher with increasing weight at age 20 and with mid-life weight (p<0.001 for both sexes). However, weight increase from age 20 until mid-life was only modestly associated with coronary atherosclerosis. The association between weight gain and coronary atherosclerosis was mainly seen in men. However, no significant sex difference could be detected when adjusting for the 10-year delay in disease development in women.Similar in men and women, weight at age 20 and weight in midlife are strongly related to coronary atherosclerosis while weight increase from age 20 until midlife is only modestly related to coronary atherosclerosis.
17.	Boen, Rune, et al. (författare) Beyond the global brain differences : intraindividual variability differences in 1q21.1 distal and 15q11.2 bp1-bp2 deletion carriers 2024 Ingår i: Biological Psychiatry. - 0006-3223 .- 1873-2402. ; 95:2, s. 147-160 Tidskriftsartikel (refereegranskat)abstract Background: Carriers of the 1q21.1 distal and 15q11.2 BP1-BP2 copy number variants exhibit regional and global brain differences compared with noncarriers. However, interpreting regional differences is challenging if a global difference drives the regional brain differences. Intraindividual variability measures can be used to test for regional differences beyond global differences in brain structure.Methods: Magnetic resonance imaging data were used to obtain regional brain values for 1q21.1 distal deletion (n = 30) and duplication (n = 27) and 15q11.2 BP1-BP2 deletion (n = 170) and duplication (n = 243) carriers and matched noncarriers (n = 2350). Regional intra-deviation scores, i.e., the standardized difference between an individual's regional difference and global difference, were used to test for regional differences that diverge from the global difference.Results: For the 1q21.1 distal deletion carriers, cortical surface area for regions in the medial visual cortex, posterior cingulate, and temporal pole differed less and regions in the prefrontal and superior temporal cortex differed more than the global difference in cortical surface area. For the 15q11.2 BP1-BP2 deletion carriers, cortical thickness in regions in the medial visual cortex, auditory cortex, and temporal pole differed less and the prefrontal and somatosensory cortex differed more than the global difference in cortical thickness.Conclusions: We find evidence for regional effects beyond differences in global brain measures in 1q21.1 distal and 15q11.2 BP1-BP2 copy number variants. The results provide new insight into brain profiling of the 1q21.1 distal and 15q11.2 BP1-BP2 copy number variants, with the potential to increase understanding of the mechanisms involved in altered neurodevelopment.
18.	Carlsson, Jörgen, et al. (författare) Planning for intracavitary anti-EGFR radionuclide therapy of gliomas : Literature review and data on EGFR expression 2006 Ingår i: Journal of Neuro-Oncology. - : Springer Science and Business Media LLC. - 0167-594X .- 1573-7373. ; 77:1, s. 33-45 Tidskriftsartikel (refereegranskat)abstract Targeting with radionuclide labelled substances that bind specifically to the epidermal growth factor receptor, EGFR, is considered for intracavitary therapy of EGFR-positive glioblastoma multiforme, GBM. Relevant literature is reviewed and examples of EGFR expression in GBM are given. The therapeutical efforts made so far using intracavitary anti-tenascin radionuclide therapy of GBM have given limited effects, probably due to low radiation doses to the migrating glioma cells in the brain. Low radiation doses might be due to limited penetration of the targeting agents or heterogeneity in the expression of the target structure. In this article we focus on the possibilities to target EGFR on the tumour cells instead of an extracellular matrix component. There seems to be a lack of knowledge on the degree of intratumoral variation of EGFR expression in GBM, although the expression seemed rather homogeneous over large areas in most of the examples (n=16) presented from our laboratory. The observed homogeneity was surprising considering the genomic instability and heterogeneity that generally characterises highly malignant tumours. However, overexpression of EGFR is, at least in primary GBMs, one of the steps in the development of malignancy, and tumour cells that lose or downregulate EGFR will probably be outgrown in an expanding tumour cell population. Thus, loss of EGFR expression might not be the critical factor for successful intracavitary radionuclide therapy. Instead, it is likely that the penetration properties of the targeting agents are critical, and detailed studies on this are urgent.
19.	Dey, Anil, et al. (författare) Inverter circuits based on vertical InAs nanowire MOSFETs 2011 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
20.	Dey, Anil, et al. (författare) Vertical InAs nanowire wrap gate transistors for integration on a Si platform 2010 Konferensbidrag (refereegranskat)
21.	Egard, Mikael, et al. (författare) Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz. 2010 Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:3, s. 809-812 Tidskriftsartikel (refereegranskat)abstract In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
22.	Erlinge, David, et al. (författare) Identification of vulnerable plaques and patients by intracoronary near-infrared spectroscopy and ultrasound (PROSPECT II) : a prospective natural history study 2021 Ingår i: The Lancet. - : Elsevier. - 0140-6736 .- 1474-547X. ; 397:10278, s. 985-995 Tidskriftsartikel (refereegranskat)abstract Background: Near-infrared spectroscopy (NIRS) and intravascular ultrasound are promising imaging modalities to identify non-obstructive plaques likely to cause coronary-related events. We aimed to assess whether combined NIRS and intravascular ultrasound can identify high-risk plaques and patients that are at risk for future major adverse cardiac events (MACEs).Methods: PROSPECT II is an investigator-sponsored, multicentre, prospective natural history study done at 14 university hospitals and two community hospitals in Denmark, Norway, and Sweden. We recruited patients of any age with recent (within past 4 weeks) myocardial infarction. After treatment of all flow-limiting coronary lesions, three-vessel imaging was done with a combined NIRS and intravascular ultrasound catheter. Untreated lesions (also known as non-culprit lesions) were identified by intravascular ultrasound and their lipid content was assessed by NIRS. The primary outcome was the covariate-adjusted rate of MACEs (the composite of cardiac death, myocardial infarction, unstable angina, or progressive angina) arising from untreated non-culprit lesions during follow-up. The relations between plaques with high lipid content, large plaque burden, and small lumen areas and patient-level and lesion-level events were determined. This trial is registered with ClinicalTrials.gov, NCT02171065.Findings: Between June 10, 2014, and Dec 20, 2017, 3629 non-culprit lesions were characterised in 898 patients (153 [17%] women, 745 [83%] men; median age 63 [IQR 55-70] years). Median follow-up was 3.7 (IQR 3.0-4.4) years. Adverse events within 4 years occurred in 112 (13.2%, 95% CI 11.0-15.6) of 898 patients, with 66 (8.0%, 95% CI 6.2-10.0) arising from 78 untreated non-culprit lesions (mean baseline angiographic diameter stenosis 46.9% [SD 15.9]). Highly lipidic lesions (851 [24%] of 3500 lesions, present in 520 [59%] of 884 patients) were an independent predictor of patient-level non-culprit lesion-related MACEs (adjusted odds ratio 2.27, 95% CI 1.25-4.13) and nonculprit lesion-specific MACEs (7.83, 4.12-14.89). Large plaque burden (787 [22%] of 3629 lesions, present in 530 [59%] of 898 patients) was also an independent predictor of non-culprit lesion-related MACEs. Lesions with both large plaque burden by intravascular ultrasound and large lipid-rich cores by NIRS had a 4-year non-culprit lesion-related MACE rate of 7.0% (95% CI 4.0-10.0). Patients in whom one or more such lesions were identified had a 4-year non-culprit lesion-related MACE rate of 13.2% (95% CI 9.4-17.6).Interpretation: Combined NIRS and intravascular ultrasound detects angiographically non-obstructive lesions with a high lipid content and large plaque burden that are at increased risk for future adverse cardiac outcomes.
23.	Frisk, Karin, et al. (författare) Characterisation of EBM-built shelled samples of Ti6Al4V compacted by HIP 2016 Ingår i: World PM 2016 Congress and Exhibition. - : European Powder Metallurgy Association (EPMA). - 9781899072484 Konferensbidrag (refereegranskat)abstract Compaction of additively manufactured Ti6Al4V components by Hot Isostatic Pressing (HIP) is often applied to eliminate porosity, producing fully dense material. In the present work shelled samples produced by Electron Beam Melting with the Arcam process (EBM) were compacted by HIP to produce fully dense samples. Cylindrical samples were studied. The walls of the cylinders were built with EBM, and the powder from the process was left uncompacted inside the cylinders. Samples with different wall thicknesses were produced. The samples were thereafter subjected to a HIP compaction. The critical wall thicknesses needed for compaction were evaluated, and the microstructures characterized. The results show that fully dense samples, with very fine microstructures, are possible.
24.	Grevholm, Barbro, et al. (författare) Hva er matematikk? 2013 Ingår i: Matematikkundervisning 1-7. - : Cappelen Damm Akademisk. - 9788202405458 ; , s. 31-51 Bokkapitel (övrigt vetenskapligt/konstnärligt)
25.	Henriksnäs, Johanna, 1973- (författare) Helicobacter pylori and Gastric Protection Mechanisms : An in vivo Study in Mice and Rats 2005 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract The stomach is frequently exposed to hazardous agents and to resist this harsh environment, several protective mechanisms exist. Of special interest is the gastric pathogen Helicobacter pylori which causes gastritis, ulcers and cancer but the mechanism leading to these diseases are still unclear. However it is very likely that H. pylori negatively influence the protection mechanisms that exist in the stomach. The aims of the present investigation were first to develop an in vivo mouse model in which different protection mechanisms could be studied, and second to investigate the influence of H. pylori on these mechanisms. An in vivo preparation of the gastric mucosa in mice was developed. This preparation allows studies of different gastric mucosal variables and can also be applied for studies in other gastro-intestinal organs. Mice chronically infected with H. pylori, were shown to have a reduced ability of the mucosa to maintain a neutral pH at the epithelial cell surface. This could be due to the thinner inner, firmly adherent mucus gel layer, and/or to defective bicarbonate transport across the epithelium. The Cl-/HCO3- exchanger SLC26A9 was inhibited by NH4+, which also is produced by H. pylori. The mRNA levels of SLC26A9 were upregulated in infected mice, suggesting a way to overcome the inhibition of the transporter. Furthermore, the hyperemic response to acid pH 2 and 1.5 was abolished in these mice. The mechanisms by which the bacteria could alter the blood flow response might involve inhibition of the epithelial iNOS.Water extracts of H. pylori (HPE) reduces the blood flow acutely through an iNOS and nerve-mediated pathway, possibly through the endogenous iNOS inhibitor ADMA. Furthermore, HPE alters the blood flow response to acid as the hyperemic response to acid pH 0.8 is accentuated in mice treated with HPE.
26.	Håkanson, Ulf, et al. (författare) Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy 2002 Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Konferensbidrag (refereegranskat)abstract Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
27.	Håkanson, Ulf, et al. (författare) Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence 2002 Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:3, s. 494-496 Tidskriftsartikel (refereegranskat)abstract We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
28.	Johansson, Mikael, et al. (författare) Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots 2003 Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 68:12 Tidskriftsartikel (refereegranskat)abstract We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)].
29.	Kaufmann, Tobias, et al. (författare) Brain Disorders are Associated With Increased Brain Age 2018 Ingår i: Biological Psychiatry. - : Elsevier. - 0006-3223 .- 1873-2402. ; 83:9, s. S238-S239 Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
30.	Kilpi, Olli Pekka, et al. (författare) High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm 2020 Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 41:8, s. 1161-1164 Tidskriftsartikel (refereegranskat)abstract Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion. One main bottleneck for the vertical MOSFETs is the large access resistance arising from the contacts and ungated regions. We demonstrate a process to reduce the access resistance by combining a gate-last process with ALD gate-metal deposition. The devices demonstrate fully scalable gm down to Lg = 25 nm. These vertical core/shell InAs/InGaAs MOSFETs demonstrate gm = 3.1 mS/μm and Ron = 190 Ωμm. This is the highest gm demonstrated on Si. Transmission line measurement verifies a low contact resistance with RC = 115 Ωμm, demonstrating that most of the MOSFET access resistance is located in the contact regions.
31.	Kilpi, Olli Pekka, et al. (författare) Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si 2017 Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:10, s. 6006-6010 Tidskriftsartikel (refereegranskat)abstract III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.
32.	Lind, Erik, et al. (författare) Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs 2009 Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 56:2, s. 201-205 Tidskriftsartikel (refereegranskat)abstract We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.
33.	Lind, Erik, et al. (författare) High Frequency Performance of Vertical InAs Nanowire MOSFET 2010 Ingår i: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm). - 1092-8669. - 9781424459193 Konferensbidrag (refereegranskat)abstract We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
34.	Loo, Lars-Ove, 1954, et al. (författare) Inventering av marin natur - Metoder för svenska havsområden. 2001 Ingår i: Naturvårdsverket Rapport. - 0282-7298. ; :5162, s. 1-180 Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
35.	Memisevic, Elvedin, et al. (författare) Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade 2017 Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. Tidskriftsartikel (refereegranskat)abstract Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1−xAsySb1‑y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized usingtransmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III−V TunnelFETs to the next level.
36.	Persson, Anton E.O., et al. (författare) Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization 2020 Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:6 Tidskriftsartikel (refereegranskat)abstract Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
37.	Persson, Christina, et al. (författare) Interleukin 1-beta gene polymorphisms and risk of gastric cancer in Sweden. 2009 Ingår i: Scandinavian journal of gastroenterology. - : Informa UK Limited. - 1502-7708 .- 0036-5521. ; 44:3, s. 339-45 Tidskriftsartikel (refereegranskat)abstract Helicobacter pylori (H. pylori) infection stimulates the production of interleukin (IL)-1 beta, a pro-inflammatory cytokine and suppressor of gastric acid secretion. As both inflammation and hypochlorhydria, which might facilitate proximal colonization of H. pylori and other bacterial species alike, have been implicated in gastric carcinogenesis, much attention has been directed to functional genetic polymorphisms that affect the production of IL-1 beta. The purpose of this study was to clarify the role of these polymorphisms.
38.	Persson, Karl-Magnus, et al. (författare) 1/f-noise in Vertical InAs Nanowire Transistors 2013 Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2 Konferensbidrag (refereegranskat)abstract The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.
39.	Persson, Karl-Magnus, et al. (författare) Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates 2013 Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 60:9, s. 2761-2767 Tidskriftsartikel (refereegranskat)abstract This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.
40.	Persson, Karl-Magnus, et al. (författare) Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs 2009 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
41.	Persson, Karl-Magnus, et al. (författare) InAs nanowire MOSFET differential active mixer on Si-substrate 2014 Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:9, s. 682-682 Tidskriftsartikel (refereegranskat)abstract An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
42.	Persson, Karl-Magnus, et al. (författare) InAs Nanowires for High Frequency Electronics 2012 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
43.	Persson, Karl-Magnus, et al. (författare) Low-frequency noise in vertical InAs nanowire FETs 2010 Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 31:5, s. 428-430 Tidskriftsartikel (refereegranskat)abstract This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
44.	Persson, Karl-Magnus, et al. (författare) Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V 2012 Ingår i: IEEE Electron Device Letters. - 0741-3106. ; , s. 195-196 Konferensbidrag (refereegranskat)
45.	Persson, Lars-Erik, et al. (författare) The homogenization method : an introduction 1993 Bok (populärvet., debatt m.m.)
46.	Persson, Olof, et al. (författare) Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy 2013 Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 3:7 Tidskriftsartikel (refereegranskat)abstract MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
47.	Samuelson, Gösta, 1930-, et al. (författare) Longitudinell studie av barnets och familjens kostvanor under första levnadsåret 1979 Ingår i: Vår föda. - 0042-2657. ; 31:9/10, s. 577-579 Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
48.	Abdikalikova, Zamira, et al. (författare) Boundedness and compactness of the embedding between spaces with multiweighted derivatives when 1 2011 Ingår i: Czechoslovak Mathematical Journal. - : Institute of Mathematics, Czech Academy of Sciences. - 0011-4642 .- 1572-9141. ; 61:1, s. 7-26 Tidskriftsartikel (refereegranskat)abstract We consider a new Sobolev type function space called the space with multiweighted derivatives W-p(n),(alpha) over bar, where (alpha) over bar = (alpha(0), alpha(1), ......, alpha(n)), alpha(i) is an element of R, i = 0, 1,......,n, and parallel to f parallel to W-p(n),((alpha) over bar) = parallel to D((alpha) over bar)(n)f parallel to(p) + Sigma(n-1) (i=0) vertical bar D((alpha) over bar)(i)f(1)vertical bar, D((alpha) over bar)(0)f(t) = t(alpha 0) f(t), d((alpha) over bar)(i)f(t) = t(alpha i) d/dt D-(alpha) over bar(i-1) f(t), i = 1, 2, ....., n. We establish necessary and sufficient conditions for the boundedness and compactness of the embedding W-p,(alpha) over bar(n) -> W-q,(beta) over bar,(m) when 1 <= q < p < infinity, 0 <= m < n
49.	Abdikalikova, Zamira, et al. (författare) Boundedness and compactness of the embedding between spaces with multiweighted derivatives when 1≤ q 2009 Rapport (övrigt vetenskapligt/konstnärligt)
50.	Abramovic, Shoshana, et al. (författare) Fejer and Hermite–Hadamard Type Inequalitiesfor N-Quasiconvex Functions 2017 Ingår i: Mathematical notes of the Academy of Sciences of the USSR. - : Maik Nauka-Interperiodica Publishing. - 0001-4346 .- 1573-8876. ; 102:5-6, s. 599-609 Tidskriftsartikel (refereegranskat)abstract Some new extensions and refinements of Hermite–Hadamard and Fejer type inequali-ties for functions which are N-quasiconvex are derived and discussed.

Skapa referenser, mejla, bekava och länka

Länka till träfflistan

Träfflista för sökning "WFRF:(Lars Erik Persson) "

Avgränsa träffmängd

År