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- Kattge, Jens, et al.
(author)
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TRY plant trait database - enhanced coverage and open access
- 2020
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In: Global Change Biology. - : Wiley-Blackwell. - 1354-1013 .- 1365-2486. ; 26:1, s. 119-188
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Journal article (peer-reviewed)abstract
- Plant traits-the morphological, anatomical, physiological, biochemical and phenological characteristics of plants-determine how plants respond to environmental factors, affect other trophic levels, and influence ecosystem properties and their benefits and detriments to people. Plant trait data thus represent the basis for a vast area of research spanning from evolutionary biology, community and functional ecology, to biodiversity conservation, ecosystem and landscape management, restoration, biogeography and earth system modelling. Since its foundation in 2007, the TRY database of plant traits has grown continuously. It now provides unprecedented data coverage under an open access data policy and is the main plant trait database used by the research community worldwide. Increasingly, the TRY database also supports new frontiers of trait-based plant research, including the identification of data gaps and the subsequent mobilization or measurement of new data. To support this development, in this article we evaluate the extent of the trait data compiled in TRY and analyse emerging patterns of data coverage and representativeness. Best species coverage is achieved for categorical traits-almost complete coverage for 'plant growth form'. However, most traits relevant for ecology and vegetation modelling are characterized by continuous intraspecific variation and trait-environmental relationships. These traits have to be measured on individual plants in their respective environment. Despite unprecedented data coverage, we observe a humbling lack of completeness and representativeness of these continuous traits in many aspects. We, therefore, conclude that reducing data gaps and biases in the TRY database remains a key challenge and requires a coordinated approach to data mobilization and trait measurements. This can only be achieved in collaboration with other initiatives.
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| 5. |
- Bano, Nargis, et al.
(author)
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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
- 2010
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In: Journal of Luminescence. - : Elsevier Science B.V., Amsterdam.. - 0022-2313 .- 1872-7883. ; 130:6, s. 963-968
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Journal article (peer-reviewed)abstract
- Optical properties of ZnO nanorods (NRs) grown by vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates were probed by cathodoluminescence (CL) measurements at room temperature and at 5 K complemented with electroluminescence. At room temperature the CL spectra for defect related emission intensity was enhanced with the electron beam penetration depth. We observed a variation in defect related green emission along the nanorod axis. This indicates a relatively poor structural quality near the interface between ZnO NRs and p-SiC substrate. We associate the green emission with oxygen vacancies. Analysis of the low-temperature (5 K) emission spectra in the UV region suggests that the synthesized nanorods contain shallow donors and acceptors.
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| 6. |
- Bano, Nargis, et al.
(author)
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Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method
- 2010
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In: Applied Physics A. - : Springer Science Business Media. - 0947-8396 .- 1432-0630. ; 100:2, s. 467-472
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Journal article (peer-reviewed)abstract
- High quality vertically aligned ZnO nanorods (NRs) were grown by low-temperature aqueous chemical technique on 4H-n-SiC substrates. Schottky light-emitting diodes (LEDs) were fabricated. The current-voltage (I-V) characteristics of Schottky diodes reveal good rectifying behavior. Optical properties of the ZnO nanorods (NRs) were probed by cathodoluminescence (CL) measurements at room temperature complemented with electroluminescence (EL). The room-temperature CL spectra of the ZnO NRs exhibit near band edge (NBE) emission as well as strong deep level emission (DLE) centered at 690 nm. At room temperature the CL spectra intensity of the DLE was enhanced with the increase of the electron beam penetration depth due to the increase of defect concentration at the interface and due to the conversion of self-absorbed UV emission. We observed a variation in the DLE along the nanorod depth. This indicates a relatively lower structural quality near the interface between ZnO NRs and n-SiC substrate. The room-temperature CL spectra of SiC show very weak emission, which confirms that most of the DLE is originating from the ZnO NRs, and SiC has a minute contribution to the emission.
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| 7. |
- Kishwar, S, et al.
(author)
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Electro-optical and Cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes
- 2010
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In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley. - 1862-6300. ; 207:1, s. 67-72
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Journal article (peer-reviewed)abstract
- Vertically aligned ZnO nanorods (NRs) with a diameter in the range of 160-200 nm were grown on p-GaN/sapphire substrates by aqueous chemical growth technique and white light emitting I diodes (LEDs) are fabricated. The properties of this LED were investigated by parameter analyzer, cathodoluminescence (CL), electroluminescence (EL), and photoluminescence (PL). The I-V characteristics of the fabricated ZnO/GaN heterojunction revealed rectifying behavior and the LED emits visible EL when bias is applied. From the CL it was confirmed that both the ZnO NRs and the p-GaN are contributing to the observed peaks. The observed EL measurements showed two emission hands centered at 450 nm and a second broad deep level defect related emission centered at 630 nm and extending from 500 rim and up to over 700 rim. Moreover, the room temperature PL spectrum of the ZnO NRs/p-GaN reveals an extra peak at the green color wavelength centered at 550 nm. Comparison of the PL, CL, and EL data suggest that the blue and near red emissions in the EL spectra are originating from Mg acceptor levels in the p-GaN and from the deep levels defects present in the ZnO NRs, respectively. The mixture of high and low energy colors, i.e., blue, green, and red, has led to the white observed luminescence.
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| 8. |
- Willander, Magnus, et al.
(author)
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Zinc oxide nanorod based photonic devices : recent progress in growth, light emitting diodes and lasers
- 2009
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In: NANOTECHNOLOGY. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:33, s. 332001-
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Research review (peer-reviewed)abstract
- Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO: P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.
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