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Träfflista för sökning "WFRF:(Li Zheshen) "

Sökning: WFRF:(Li Zheshen)

  • Resultat 1-11 av 11
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1.
  • Ahmad, Mariam, et al. (författare)
  • Uncovering the Electronic State Interplay at Metal Oxide Electron Transport Layer/Nonfullerene Acceptor Interfaces in Stable Organic Photovoltaic Devices
  • 2023
  • Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 15:47, s. 55065-55072
  • Tidskriftsartikel (refereegranskat)abstract
    • The implementation of sputter-deposited TiOx as an electron transport layer in nonfullerene acceptor-based organic photovoltaics has been shown to significantly increase the long-term stability of devices compared to conventional solution-processed ZnO due to a decreased photocatalytic activity of the sputtered TiOx. In this work, we utilize synchrotron-based photoemission and absorption spectroscopies to investigate the interface between the electron transport layer, TiOx prepared by magnetron sputtering, and the nonfullerene acceptor, ITIC, prepared in situ by spray deposition to study the electronic state interplay and defect states at this interface. This is used to unveil the mechanisms behind the decreased photocatalytic activity of the sputter-deposited TiOx and thus also the increased stability of the organic solar cell devices. The results have been compared to similar measurements on anatase TiOx since anatase TiOx is known to have a strong photocatalytic activity. We show that the deposition of ITIC on top of the sputter-deposited TiOx results in an oxidation of Ti3+ species in the TiOx and leads to the emergence of a new O 1s peak that can be attributed to the oxygen in ITIC. In addition, increasing the thickness of ITIC on TiOx leads to a shift in the O 1s and C 1s core levels toward higher binding energies, which is consistent with electron transfer at the interface. Resonant photoemission at the Ti L-edge shows that oxygen vacancies in sputtered TiOx lie mostly in the surface region, which contrasts the anatase TiOx where an equal distribution between surface and subsurface oxygen vacancies is observed. Furthermore, it is shown that the subsurface oxygen vacancies in sputtered TiOx are strongly reduced after ITIC deposition, which can reduce the photocatalytic activity of the oxide, while the oxygen vacancies in model anatase TiOx are not affected upon ITIC deposition. This difference can explain the inferior photocatalytic activity of the sputter-deposited TiOx and thus also the increased stability of devices with sputter-deposited TiOx used as an electron transport layer.
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2.
  • Bianchi, Marco, et al. (författare)
  • Robust Surface Doping of Bi2Se3 by Rubidium Intercalation
  • 2012
  • Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 6:8, s. 7009-7015
  • Tidskriftsartikel (refereegranskat)abstract
    • Rubidium adsorption on the surface of the topological insulator Bi2Se3 is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi2Se3, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.
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3.
  • Boix, Virgínia, et al. (författare)
  • Area-selective Electron-beam induced deposition of Amorphous-BNx on graphene
  • 2021
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 557, s. 149806-149806
  • Tidskriftsartikel (refereegranskat)abstract
    • Thin, stable and inert dielectric spacers are essential for manufacturing electronic devices based on 2D materials. However, direct synthesis on top of 2D materials is difficult due to their inert nature. In this work, we studied how an electron beam induces fragmentation of borazine and enables spatially confined synthesis of amorphous-BNx on graphene at room temperature. Using a combination of X-ray Photoelectron Spectroscopy, Low Energy Electron Microscopy, and Scanning Tunneling Microscopy we studied the morphology of the heterostructure, its chemical composition, and finally its temperature evolution. We find that electron-beam induced deposition starts by the binding of heavily fragmentized borazine, including atomic boron, followed by the growth of a multilayer with a 1:0.7 B:N ratio. The final structure exhibits a thermal stability up to 1400 K and ~ 50 nm spatial control provided by the electron beam. Our studies provide surface science insight into the use of electron beams for synthesis and lateral control of stable and inert layers in 2D heterostructures.
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4.
  • Doyle, Catherine M., et al. (författare)
  • Ni-Cu ion exchange observed for Ni(II)-porphyrins on Cu(111)
  • 2014
  • Ingår i: Chemical Communications. - : Royal Society of Chemistry (RSC). - 1364-548X .- 1359-7345. ; 50:26, s. 3447-3449
  • Tidskriftsartikel (refereegranskat)abstract
    • A Ni-Cu ion exchange has been observed for (5,15-dibromo-10,20-diphenylporphyrinato)nickel(II) (NiDBrDPP) and (5,10,15,20-tetrakis-(4-bromophenyl) porphyrinato)nickel(II) (NiTBrPP) on Cu(111). The ion exchange proceeds at a faster rate for the NiDBrDPP/Cu(111) system compared to NiTBrPP/Cu(111). This is explained in terms of the macrocycle-substrate distance and the distortions
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5.
  • Koust, Stig, et al. (författare)
  • Coverage-dependent oxidation and reduction of vanadium supported on anatase TiO2(1 0 1)
  • 2018
  • Ingår i: Journal of Catalysis. - : Elsevier BV. - 0021-9517. ; 360, s. 118-126
  • Tidskriftsartikel (refereegranskat)abstract
    • © 2018 Elsevier Inc. Using a multi-technical approach, we studied the oxidation of anatase TiO 2 (1 0 1)-supported vanadium (V) clusters at room temperature. We found by ex situ XPS that the highest oxidation state is +4 at sub-monolayer coverage regardless of the O 2 pressure, and STM studies revealed that the initial oxidation proceeds through oxygen-induced disintegration of V clusters into monomeric VO 2 species. By contrast, for ∼2 monolayer V coverage, a partial oxidation to V 5+ is achieved. By in situ APXPS measurements, we found that V can be maintained in the V 5+ oxidation state irrespective of the coverage; however, in the sub-monolayer range, an O 2 pressure of at least ∼1 × 10 −5 mbar is needed. Our results suggest an enhanced reducibility of V in direct contact with the TiO 2 support compared to V in the 2nd layer, which is in line with the observed optimum V 2 O 5 loading in catalytic applications just slightly below a full monolayer.
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6.
  • Schnadt, Joachim, et al. (författare)
  • Experimental and theoretical study of oxygen adsorption structures on Ag(111)
  • 2009
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 80:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The oxidized Ag(111) surface has been studied by a combination of experimental and theoretical methods, scanning tunneling microscopy, x-ray photoelectron spectroscopy, and density functional theory. A large variety of different surface structures is found, depending on the detailed preparation conditions. The observed structures fall into four classes: (a) individually chemisorbed atomic oxygen atoms, (b) three different oxygen overlayer structures, including the well-known p(4x4) phase, formed from the same Ag-6 and Ag-10 building blocks, (c) a c(4x8) structure not previously observed, and (d) at higher oxygen coverages structures characterized by stripes along the high-symmetry directions of the Ag(111) substrate. Our analysis provides a detailed explanation of the atomic-scale geometry of the Ag-6/Ag-10 building block structures and the c(4x8) and stripe structures are discussed in detail. The observation of many different and co-existing structures implies that the O/Ag(111) system is characterized by a significantly larger degree of complexity than previously anticipated, and this will impact our understanding of oxidation catalysis processes on Ag catalysts.
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7.
  • Schnadt, Joachim, et al. (författare)
  • Extended One-Dimensional Supramolecular Assembly on a Stepped Surface
  • 2008
  • Ingår i: Physical Review Letters. - 1079-7114. ; 100
  • Tidskriftsartikel (refereegranskat)abstract
    • 2,6-naphthalene-dicarboxylic acid was adsorbed on a Ag(110) surface with an average terrace width of only some tens of a nm. Scanning tunneling microscopy shows that the adsorbates self-assemble into one-dimensional mesoscale length chains. These extend over several hundred nanometers and thus the structure exhibits an unprecedented tolerance to monatomic surface steps. Density functional theory and x-ray photoelectron spectroscopy explain the behavior by a strong intermolecular hydrogen bond plus a distinct template-mediated directionality and a high degree of molecular backbone flexibility. ©2008 The American Physical Society
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8.
  • Schnadt, Joachim, et al. (författare)
  • Interplay of adsorbate-adsorbate and adsorbate-substrate interactions in self-assembled molecular surface nanostructures
  • 2010
  • Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 3:7, s. 459-471
  • Tidskriftsartikel (refereegranskat)abstract
    • The adsorption of 2,6-naphthalenedicarboxylic acid (NDCA) molecules on the Ag(110), Cu(110), and Ag(111) surfaces at room temperature has been studied by means of scanning tunnelling microscopy (STM). Further supporting results were obtained using X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption spectroscopy (XAS). On the Ag(110) support, which had an average terrace width of only 15 nm, the NDCA molecules form extended one-dimensional (1-D) assemblies, which are oriented perpendicular to the step edges and have lengths of several hundred nanometres. This shows that the assemblies have a large tolerance to monatomic surface steps on the Ag(110) surface. The observed behaviour is explained in terms of strong intermolecular hydrogen bonding and a strong surface-mediated directionality, assisted by a sufficient degree of molecular backbone flexibility. In contrast, the same kind of step-edge crossing is not observed when the molecules are adsorbed on the isotropic Ag(111) or more reactive Cu(110) surfaces. On Ag(111), similar 1-D assemblies are formed to those on Ag(110), but they are oriented along the step edges. On Cu(110), the carboxylic groups of NDCA are deprotonated and form covalent bonds to the surface, a situation which is also achieved on Ag(110) by annealing to 200 degrees C. These results show that the formation of particular self-assembled molecular nanostructures depends significantly on a subtle balance between the adsorbate-adsorbate and adsorbate-substrate interactions and that kinetic factors play an important role.
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9.
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10.
  • Xu, Changming, et al. (författare)
  • Spark plasma sintering of B4C ceramics : The effects of milling medium and TiB2 addition
  • 2012
  • Ingår i: International journal of refractory metals & hard materials. - : Elsevier BV. - 0263-4368. ; 30:1, s. 139-144
  • Tidskriftsartikel (refereegranskat)abstract
    • Boron carbide (B4C) ceramics, with a relative density up to 98.4% and limited grain growth, were prepared at 1600-1800 degrees C by spark plasma sintering (SPS) technique. The effects of powder milling medium (water and 2-propanol) on the powders' surface characteristics and TiB2 addition on the sintering densification were investigated. The ball milling processing of B4C powders in water can promote the sintering of B4C ceramics. A B2O3 layer on B4C particle surface is concluded to promote the densification of the B4C ceramics at an early sintering stage. This B2O3 layer, which normally inhibits the densification process at the final stage of the sintering, can be reduced through reaction with TiB2 particles, resulting in further densification of the B4C ceramics.
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11.
  • Yong, Zhihua, et al. (författare)
  • Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
  • 2021
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 1873-5584 .- 0169-4332. ; 551
  • Tidskriftsartikel (refereegranskat)abstract
    • Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO2 overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 106 switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration.
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