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Träfflista för sökning "WFRF:(Liberali V) "

Sökning: WFRF:(Liberali V)

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1.
  • Abolins, M., et al. (författare)
  • The ATLAS Data Acquisition and High Level Trigger system
  • 2016
  • Ingår i: Journal of Instrumentation. - 1748-0221. ; 11
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper describes the data acquisition and high level trigger system of the ATLAS experiment at the Large Hadron Collider at CERN, as deployed during Run 1. Data flow as well as control, configuration and monitoring aspects are addressed. An overview of the functionality of the system and of its performance is presented and design choices are discussed.
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2.
  • Andreou, Charalambos, et al. (författare)
  • A Subthreshold, Low-Power, RHBD Reference Circuit, for Earth Observation and Communication Satellites
  • 2015
  • Ingår i: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on. - 9781479983919 ; , s. 2245-2248
  • Konferensbidrag (refereegranskat)abstract
    • A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4 mu W and exhibits a measured Temperature Drift of 15ppm/degrees C for a temperature range of 190 degrees C (-60 degrees C to 130 degrees C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18 mu m standard CMOS technology and occupies a silicon area of 0.039mm(2). The proposed voltage reference is suitable for high-precision and low-power space applications.
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3.
  • Andreou, Charalambos M., et al. (författare)
  • Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
  • 2016
  • Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 63:6, s. 2950-2961
  • Tidskriftsartikel (refereegranskat)abstract
    • An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 mu m CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.
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  • Resultat 1-3 av 3

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