| 1. |
- Thinh, N. Q., et al.
(författare)
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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
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Tidskriftsartikel (refereegranskat)abstract
- Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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| 2. |
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| 3. |
- Thinh, N.Q., et al.
(författare)
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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
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Tidskriftsartikel (refereegranskat)abstract
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
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| 4. |
- Thinh, N.Q., et al.
(författare)
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Ga-interstitial related defects in Ga(Al)NP
- 2005
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Ingår i: 27th Int. Conf. on the Physics of Semicond,2004. - : American Institute of Physics (AIP). ; , s. 259-260
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Twogrown-in Ga interstitial (Gai) defects in Ga(Al)NP are identified byoptically detected magnetic resonance (ODMR), from the characteristic hyperfine (HF)structure associated with the nuclear spin I=3/2 of the Gai.Both defects are concluded to be Gai-related complexes. Effects ofAl and N compositions on the HF structure shed lighton local surrounding of the Gai. ©2005 American Institute ofPhysics
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| 5. |
- Zhang, L., et al.
(författare)
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Electronic band structure of graphene from resonant soft x-ray spectroscopy : The role of core-hole effects
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:24, s. 245430-
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure and band dispersion of graphene on SiO2 have been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS). Using first-principles calculations, it is found that the core-hole effect is dramatic in XAS while it has negligible consequences in XES. Strong dispersive features, due to the conservation of crystal momentum, are observed in RIXS spectra. Simulated RIXS spectra based on the Kramers-Heisenberg theory agree well with the experimental results, provided a shift between RIXS and XAS due to the absence or presence of the core hole is taken into account.
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