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- Persson, Stefan, et al.
(författare)
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Variation of contact resistivity with Ge in TiW/p(+) SiGe contacts
- 2004
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T114, s. 49-52
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Tidskriftsartikel (refereegranskat)abstract
- The dependence of contact resistivity on the Ge content in Si1-xGex is examined for TiW/p(+) Si1-xGex interfaces. Measurements are made on contacts with epitaxial Si1-xGex layers either at the surface or buried under a Si cap layer of various thicknesses. The contact resistivity is found to decrease by an order of magnitude with increasing Ge content from 0 to 30 at. %, which is attributed to an increase in the valence band energy of p(+) Si1-xGex. The measured contact resistivity is compared with a theoretical model, and the experimental results agree well with the modelled ones.
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