| 1. |
- Zhang, Lixiu, et al.
(författare)
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Advances in the Application of Perovskite Materials
- 2023
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Ingår i: NANO-MICRO LETTERS. - : SHANGHAI JIAO TONG UNIV PRESS. - 2311-6706. ; 15:1
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Forskningsöversikt (refereegranskat)abstract
- Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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| 2. |
- Guo, Ruiqi, et al.
(författare)
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Exploiting Flexible Memristors Based on Solution-Processed Colloidal CuInSe2 Nanocrystals
- 2020
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Ingår i: Advanced Electronic Materials. - : Wiley. - 2199-160X. ; 6:5
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Tidskriftsartikel (refereegranskat)abstract
- Compared to analogous bulk materials, colloidal nanocrystals have presented a powerful platform for building up electronic devices on the nano/micrometer scale and flexible portable electronic apparatus with the benefits of solution-based processing approach at room temperature. Herein, memristors based on CuInSe2 (CISe) colloidal nanocrystals prepared using a solution-based process at room temperature are constructed. The memristors exhibit obvious bipolar resistive switching performance with a high–low resistance ratio larger than 5.7 and a steady retention time over 104 s. This is attributed to the copper ion redox reaction and the migration of these ions under an applied electric field. When the SET voltage is reached, the ions are separated from one of the electrodes, and the memristor changes from a low-resistance state (LRS) to a high-resistance state (HRS). Conversely, when the voltage reaches the RESET voltage, the memristor switches from a HRS to a LRS. In addition, the flexible memristor can be fabricated by spincoating nanocrystal solution onto polyethylene terephthalate (PET) at room temperature, showing excellent reproducibility of the performance including 100 times of continuous operation, 104 s of reproducible reading, 600 times of antifatigue testing, and thermal stability up to 95 °C. The flexible devices demonstrate promising applications for portable electronic devices.
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| 3. |
- Guo, Ruiqi, et al.
(författare)
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Manganese doped eco-friendly CuInSe2 colloidal quantum dots for boosting near-infrared photodetection performance
- 2021
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Ingår i: Chemical Engineering Journal. - : Elsevier BV. - 1385-8947. ; 403
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Tidskriftsartikel (refereegranskat)abstract
- CuInSe2 (CISe) colloidal quantum dots (QDs) display promising applications in photodetection especially within near-infrared (NIR) regions due to their high extinction coefficient and environmental-friendly. However, the high trap density and poor crystal quality introduced by the ternary structure result in low photodetection of CISe QDs devices. Herein, we dope transition metal manganese ions (Mn2+) into CISe QDs to tackle the above problems. Structural characterization results demonstrate the crystal quality of CISe QDs is improved by doping Mn2+ during the synthesis of QDs. The transient absorption (TA) spectroscopic study together with the space-charge-limited current (SCLC) measurements show the charge carrier lifetime of Mn-CISe QDs is much longer than that of the CISe QDs, due to the Mn2+ doping state serve as hole capturer forming a charge-compensated pair with the Cu2+ defect that makes the long-lived Cu2+ radiative recombination dominate. Furthermore, Mn2+ doping concurrently modifies the conduction band minimum and valence band maximum level of the QDs verified by the ultraviolet photoelectron spectroscopy (UPS), which determines the driving force for charge carrier transfer to acceptors. The optimal Mn2+ doping level (0.01 Mn:Cu feed ratio) balanced the above two factors in the QDs. The detector based on such Mn-CISe QDs exhibits responsivity of 30 mA/W and specific detectivity of 4.2 × 1012 Jones at near-infrared wavelength, the response speed of 0.76 µs, and suppressed dark current density of 1.6 × 10−10 A cm−2.
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