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- Pedersen, Henrik, 1981-, et al.
(författare)
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Chloride-based SiC epitaxial growth
- 2009
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Ingår i: Materials Science Forum Vols. 615-617. - : Trans Tech Publications. ; , s. 89-
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Konferensbidrag (refereegranskat)abstract
- Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.
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- Pedersen, Henrik, 1981-, et al.
(författare)
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Growth characteristics of chloride-based SiC epitaxial growth
- 2008
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Ingår i: Physica status solidi (RRL) - Rapid Research Letters. - : Wiley InterScience. - 1862-6270 .- 1862-6254. ; 2:6, s. 278-280
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Tidskriftsartikel (refereegranskat)abstract
- In this study some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the C/Si and Cl/Si ratios have on the growth are studied. It is found that MTS is the most efficient precursor and that the growth becomes carbon limited at C/Si < 1.
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