| 1. |
- Li, Shunyi, et al.
(författare)
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Intrinsic energy band alignment of functional oxides
- 2014
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Ingår i: Physica Status Solidi - Rapid Research Letetrs. - : Wiley. - 1862-6254 .- 1862-6270. ; 8:6, s. 571-576
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Tidskriftsartikel (refereegranskat)abstract
- The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photoelectrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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| 2. |
- Mihnev, M. T., et al.
(författare)
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Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene
- 2016
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 7
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Tidskriftsartikel (refereegranskat)abstract
- The ultrafast dynamics of hot carriers in graphene are key to both understanding of fundamental carrier-carrier interactions and carrier-phonon relaxation processes in two-dimensional materials, and understanding of the physics underlying novel high-speed electronic and optoelectronic devices. Many recent experiments on hot carriers using terahertz spectroscopy and related techniques have interpreted the variety of observed signals within phenomenological frameworks, and sometimes invoke extrinsic effects such as disorder. Here, we present an integrated experimental and theoretical programme, using ultrafast timeresolved terahertz spectroscopy combined with microscopic modelling, to systematically investigate the hot-carrier dynamics in a wide array of graphene samples having varying amounts of disorder and with either high or low doping levels. The theory reproduces the observed dynamics quantitatively without the need to invoke any fitting parameters, phenomenological models or extrinsic effects such as disorder. We demonstrate that the dynamics are dominated by the combined effect of efficient carrier-carrier scattering, which maintains a thermalized carrier distribution, and carrier-optical-phonon scattering, which removes energy from the carrier liquid.
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| 3. |
- Schultheiß, J., et al.
(författare)
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Domain wall-grain boundary interactions in polycrystalline Pb(Zr0.7Ti0.3)O3 piezoceramics
- 2020
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Ingår i: Journal of the European Ceramic Society. - : Elsevier BV. - 0955-2219. ; 40:12, s. 3965-3973
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Tidskriftsartikel (refereegranskat)abstract
- Interactions between grain boundaries and domain walls were extensively studied in ferroelectric films and bicrystals. This knowledge, however, has not been transferred to polycrystalline ceramics, in which the grain size represents a powerful tool to tailor the electromechanical and dielectric response. Here, we relate changes in dielectric and electromechanical properties of a bulk polycrystalline Pb(Zr0.7Ti0.3)O3 to domain wall interactions with grain boundaries. Samples with grain sizes in the range of 3.9–10.4 μm were prepared and their microstructure, crystal structure, and dielectric/electromechanical properties were investigated. A decreasing grain size was accompanied by a reduction in large-signal electromechanical properties and an increase in small-signal relative permittivity. High-energy diffraction analysis revealed increasing microstrains upon decreasing the grain size, while piezoresponse force microscopy indicated an increased local coercive voltage near grain boundaries. The changes in properties were thus related to strained material volume close to the grain boundaries exhibiting reduced domain wall dynamics.
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| 4. |
- Sousa, Frederico B., et al.
(författare)
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Ultrafast hot electron-hole plasma photoluminescence in two-dimensional semiconductors
- 2023
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 15:15, s. 7154-7163
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Tidskriftsartikel (refereegranskat)abstract
- The transition metal dichalcogenide family of semiconducting two-dimensional materials has recently shown a prominent potential to be an ideal platform to study the exciton Mott transition into electron-hole plasma and liquid phases due to their strong Coulomb interactions. Here, we show that pulsed laser excitation at high pump fluences can induce this exciton Mott transition to an electron-hole plasma in mono and few-layer transition metal dichalcogenides at room temperature. The formation of an electron-hole plasma leads to a broadband light emission spanning from the near infrared to the visible region. In agreement with our theoretical calculations, the photoluminescence emission at high energies displays an exponential decay that directly reflects the electronic temperature - a characteristic fingerprint of unbound electron-hole pair recombination. Furthermore, two-pulse excitation correlation measurements were performed to study the dynamics of electronic cooling, which shows two decay time components, one of less than 100 fs and a slower component of few ps associated with the electron-phonon and phonon-lattice bath thermalizations, respectively. Our work may shed light on further studies of the exciton Mott transition into other two-dimensional materials and their heterostructures and its applications in nanolasers and other optoelectronic devices.
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