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1.	Grahn, J. V., et al. (författare) A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget 2000 Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 549-554 Tidskriftsartikel (refereegranskat)abstract A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.
2.	Gylfason, Kristinn B., 1978-, et al. (författare) Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching 2012 Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 30:6, s. 06FF05- Tidskriftsartikel (refereegranskat)abstract The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro- and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity.
3.	Johansson, Ted, et al. (författare) Influence of SOI-generated stress on BiCMOS performance 2006 Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 50:6, s. 935-942 Tidskriftsartikel (refereegranskat)abstract Two BiCMOS processes were adapted for SOI and the performance of the bipolar devices was studied. Differences in electrical parameters were observed, in particular the current gain, which processing or doping profiles could not explain, but correlated with observed stress in transistors. Simulation of the process flow with stress included revealed that stress was generated to a higher degree in the SOI wafers in the presence of deep trench isolation (DTI). Theoretical estimations and electrical simulations with and without stress yielded results consistent with observed data. Thus, we conclude that the observed differences are caused by process-induced in-plane biaxial stress.
4.	Bjorkholm, M., et al. (författare) Treatment-related risk factors for transformation to acute myeloid leukemia and myelodysplastic syndromes in myeloproliferative neoplasms 2011 Ingår i: Journal of Clinical Oncology. - : American Society of Clinical Oncology: JCO. - 0732-183X .- 1527-7755. ; 29:17, s. 2410-2415 Tidskriftsartikel (refereegranskat)abstract Purpose: Patients with myeloproliferative neoplasms (MPNs), including polycythemia vera, essential thrombocythemia, and primary myelofibrosis, have a propensity to develop acute myeloid leukemia (AML) and myelodysplastic syndromes (MDSs). Using population-based data from Sweden, we assessed the role of MPN treatment and subsequent AML/MDS risk with special focus on the leukemogenic potential of hydroxyurea (HU). Methods: On the basis of a nationwide MPN cohort (N = 11,039), we conducted a nested case-control study, including 162 patients (153 and nine with subsequent AML and MDS diagnosis, respectively) and 242 matched controls. We obtained clinical and MPN treatment data for all patients. Using logistic regression, we calculated odds ratios (ORs) as measures of AML/MDS risk. Results: Forty-one (25%) of 162 patients with MPNs with AML/MDS development were never exposed to alkylating agents, radioactive phosphorous (P32), or HU. Compared with patients with who were not exposed to HU, the ORs for 1 to 499 g, 500 to 999 g, more than 1,000 g of HU were 1.5 (95% CI, 0.6 to 2.4), 1.4 (95% CI, 0.6 to 3.4), and 1.3 (95% CI, 0.5 to 3.3), respectively, for AML/MDS development (not significant). Patients with MPNs who received P32 greater than 1,000 MBq and alkylators greater than 1 g had a 4.6-fold (95% CI, 2.1 to 9.8; P = .002) and 3.4-fold (95% CI, 1.1 to 10.6; P = .015) increased risk of AML/MDS, respectively. Patients receiving two or more cytoreductive treatments had a 2.9-fold (95% CI, 1.4 to 5.9) increased risk of transformation. Conclusion: The risk of AML/MDS development after MPN diagnosis was significantly associated with high exposures of P32 and alkylators but not with HU treatment. Twenty-five percent of patients with MPNs who developed AML/MDS were not exposed to cytotoxic therapy, supporting a major role for nontreatment-related factors. © 2011 by American Society of Clinical Oncology.
5.	Fischer, Andreas C., 1982-, et al. (författare) 3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching 2012 Ingår i: Advanced Functional Materials. - : Wiley-VCH Verlagsgesellschaft. - 1616-301X .- 1616-3028. ; 22:19, s. 4004-4008 Tidskriftsartikel (refereegranskat)abstract A method for additive layer-by-layer fabrication of arbitrarily shaped 3D silicon micro- and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 μm long, and patterned lines that are 33 nm wide.
6.	Fischer, Andreas C., 1982-, et al. (författare) 3D Patterning of Si Micro and Nano Structures by Focused Ion Beam Implantation, Si Deposition and Selective Si Etching 2012 Konferensbidrag (övrigt vetenskapligt/konstnärligt)
7.	Fischer, Andreas C., et al. (författare) Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching 2012 Ingår i: 12th IEEE Conference on Nanotechnology (IEEE-NANO), 2012. - : IEEE conference proceedings. - 9781467321983 ; , s. 1-4 Konferensbidrag (refereegranskat)abstract In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.
8.	Thomas, Richard D., et al. (författare) The double electrostatic ion ring experiment : A unique cryogenic electrostatic storage ring for merged ion-beams studies 2011 Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 82:6, s. 065112- Tidskriftsartikel (refereegranskat)abstract We describe the design of a novel type of storage device currently under construction at Stockholm University, Sweden, using purely electrostatic focussing and deflection elements, in which ion beams of opposite charges are confined under extreme high vacuum cryogenic conditions in separate rings and merged over a common straight section. The construction of this double electrostatic ion ring experiment uniquely allows for studies of interactions between cations and anions at low and well-defined internal temperatures and centre-of-mass collision energies down to about 10 K and 10 meV, respectively. Position sensitive multi-hit detector systems have been extensively tested and proven to work in cryogenic environments and these will be used to measure correlations between reaction products in, for example, electron-transfer processes. The technical advantages of using purely electrostatic ion storage devices over magnetic ones are many, but the most relevant are: electrostatic elements which are more compact and easier to construct; remanent fields, hysteresis, and eddy-currents, which are of concern in magnetic devices, are no longer relevant; and electrical fields required to control the orbit of the ions are not only much easier to create and control than the corresponding magnetic fields, they also set no upper mass limit on the ions that can be stored. These technical differences are a boon to new areas of fundamental experimental research, not only in atomic and molecular physics but also in the boundaries of these fields with chemistry and biology. For examples, studies of interactions with internally cold molecular ions will be particular useful for applications in astrophysics, while studies of solvated ionic clusters will be of relevance to aeronomy and biology.
9.	Abedin, Ahmad, et al. (författare) Germanium on Insulator Fabrication for Monolithic 3-D Integration 2018 Ingår i: IEEE Journal of the Electron Devices Society. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 2168-6734. ; 6:1, s. 588-593 Tidskriftsartikel (refereegranskat)abstract A low temperature (T-max = 350 degrees C) process for Germanium (Ge) on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this paper. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding and an etch-back process using Si0.5Ge0.5 as an etch-stop layer. GOI substrates with surface roughness below 0.5 nm, 0.15% tensile strain, thickness nonuniformity of less than 3 nm and residual p-type doping of less than 1016 cm(-3) were fabricated. Ge pFETs are fabricated (T-max = 600 degrees C) on the GOI wafer with 70% yield. The devices exhibit a negative threshold voltage of -0.18 V and 60% higher mobility than the SOI pFET reference devices.
10.	Abedin, Ahmad, et al. (författare) GOI fabrication for monolithic 3D integration 2018 Ingår i: 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538637654 ; , s. 1-3 Konferensbidrag (refereegranskat)abstract A low temperature (Tmax=350 °C) process for Ge on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this work. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding, and an etch-back process using Si0.5Ge0.5 as an etch-stop layer. Using this technique, GOI substrates with surface roughness below 0.5 nm, thickness nonuniformity of less than 3 nm, and residual p-type doping of less than 1016 cm-3 are achieved. Ge pFETs are fabricated (Tmax=600 °C) on the GOI wafer with 70% yield. The devices exhibit a negative threshold voltage of-0.18 V and 60% higher mobility than the SOI pFET reference devices.
11.	Abelsson, J, et al. (författare) The outcome of allo-HSCT for 92 patients with myelofibrosis in the Nordic countries. 2012 Ingår i: Bone Marrow Transplantation. - : Nature Publishing Group. - 0268-3369 .- 1476-5365. ; 47:3, s. 380-386 Tidskriftsartikel (refereegranskat)abstract Between 1982 and 2009 a total of 92 patients with myelofibrosis (MF) in chronic phase underwent allo-SCT in nine Nordic transplant centers. Myeloablative conditioning (MAC) was given to 40 patients, and reduced intensity conditioning (RIC) was used in 52 patients. The mean age in the two groups at transplantation was 46±12 and 55±8 years, respectively (P<0.001). When adjustment for age differences was made, the survival of the patients treated with RIC was significantly better (P=0.003). Among the RIC patients, the survival was significantly (P=0.003) better for the patients with age <60 years (a 10-year survival close to 80%) than for the older patients. The type of stem cell donor did not significantly affect the survival. No significant difference was found in TRM at 100 days between the MAC- and the RIC-treated patients. The probability of survival at 5 years was 49% for the MAC-treated patients and 59% in the RIC group (P=0.125). Patients treated with RIC experienced significantly less aGVHD compared with patients treated with MAC (P<0.001). The OS at 5 years was 70, 59 and 41% for patients with Lille score 0, 1 and 2, respectively (P=0.038, when age adjustment was made). Twenty-one percent of the patients in the RIC group were given donor lymphocyte infusion because of incomplete donor chimerism, compared with none of the MAC-treated patients (P<0.002). Nine percent of the patients needed a second transplant because of graft failure, progressive disease or transformation to AML, with no significant difference between the groups. Our conclusions are (1) allo-SCT performed with RIC gives a better survival compared with MAC. (2) age over 60 years is strongly related to a worse outcome and (3) patients with higher Lille score had a shorter survival.
12.	Banuazizi, Seyed Amir Hossein, et al. (författare) Control of thermal budget in nanocontact spin-torque nano-oscillators Annan publikation (övrigt vetenskapligt/konstnärligt)abstract We investigate the influence of the bottom Cu electrode thickness (tCu) in nanocontact spin-torque nano-oscillators (NC-STNOs) based on Si/SiO2/Pd(8)/Cu(tCu)/Co(8)/Cu(7)/NiFe(4.5)/Cu(3)/Pd(3) GMR stacks on the thermal budget of the magnetodynamically active region. Increasing tCu from 10 to 70 nm results in a ~50% reduction in Joule heating in both the Co and NiFe layers, which directly improves the microwave output stability and linewidth. Numerical simulations of the NC-STNO current distribution suggest that this improvement originates from a strongly reduced lateral current spread in the top ferromagnetic layer and a reduction in the device's resistance.
13.	Banuazizi, Seyed Amir Hossein, et al. (författare) Order of magnitude improvement of nano-contact spin torque nano-oscillator performance 2017 Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 9:5, s. 1896-1900 Tidskriftsartikel (refereegranskat)abstract Spin torque nano-oscillators (STNO) represent a unique class of nano-scale microwave signal generators and offer a combination of intriguing properties, such as nano sized footprint, ultrafast modulation rates, and highly tunable microwave frequencies from 100 MHz to close to 100 GHz. However, their low output power and relatively high threshold current still limit their applicability and must be improved. In this study, we investigate the influence of the bottom Cu electrode thickness (t(Cu)) in nano-contact STNOs based on Co/Cu/NiFe GMR stacks and with nano-contact diameters ranging from 60 to 500 nm. Increasing t(Cu) from 10 to 70 nm results in a 40% reduction of the threshold current, an order of magnitude higher microwave output power, and close to two orders of magnitude better power conversion efficiency. Numerical simulations of the current distribution suggest that these dramatic improvements originate from a strongly reduced lateral current spread in the magneto-dynamically active region.
14.	Banuazizi, Seyed, et al. (författare) Order of magnitude improvement of nano-contact spin torque nano-oscillator performance 2017 Ingår i: 2017 IEEE International Magnetics Conference, INTERMAG 2017. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538610862 Konferensbidrag (refereegranskat)abstract Spin torque nano-oscillators [1,2] (STNO) represent a unique class of nano-scale microwave signal generators where spin transfer torque [3-5] (STT) from a direct spin-polarized current drives and controls the auto-oscillation of the local free layer magnetization, which through its oscillating magnetoresistance transforms the direct current into a tunable microwave voltage.
15.	Buono, Benedetto, et al. (författare) Current Gain Degradation in 4H-SiC Power BJTs 2011 Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 679-680, s. 702-705 Tidskriftsartikel (refereegranskat)abstract SiC airs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial production of these devices. The aim of this paper is to investigate the current gain degradation in BJTs with no significant degradation of the on-resistance. Electrical measurements and simulations have been used to characterize the behavior of the BJT during the stress test. Current gain degradation occurs, the gain drops from 58 before stress to 43 after 40 hours, and, moreover, the knee current shows fluctuations in its value during the first 20 hours. Current gain degradation has been attributed to increased interface traps or reduced lifetime in the base-emitter region or small stacking faults in the base-emitter region, while fluctuations of the knee current might be due to stacking faults in the collector region.
16.	Buono, Benedetto, et al. (författare) Influence of Emitter Width and Emitter-Base Distance on the Current Gain in 4H-SiC Power BJTs 2010 Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 57:10, s. 2664-2670 Tidskriftsartikel (refereegranskat)abstract The influence of the emitter-base geometry on the current gain has been investigated by means of measurements and simulations. Particular attention has been placed on the emitter width and on the distance between the emitter edge and the base contact. When the emitter width is decreased from 40 to 8 mu m, the current gain is reduced by 20%, whereas when the distance between the base contact and the emitter edge is decreased from 5 to 2 mu m, the current gain is reduced by 10%. Simulations have been used to investigate the reasons for the current gain reduction. The reduction of the emitter width induces two mechanisms of current gain reduction: earlier forward biasing of the base-collector junction and higher recombination in the emitter region. Both mechanisms result from the higher current density flowing under the emitter region. Placing the base contact very close to the emitter edge increases the base current by increasing the gradient of the electron concentration toward the base contact. The effect of increasing the base doping in the extrinsic region has been simulated, and the results demonstrate that the current gain can be improved if a high doping concentration in the range of 5 x 10(18) cm(-3) is used.
17.	Buono, Benedetto, et al. (författare) Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs 2010 Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 57:3, s. 704-711 Tidskriftsartikel (refereegranskat)abstract Accurate physical modeling has been developed to describe the current gain of silicon carbide (SiC) power bipolar junction transistors (BJTs), and the results have been compared with measurements. Interface traps between SiC and SiO2 have been used to model the surface recombination by changing the trap profile, capture cross section, and concentration. The best agreement with measurement is obtained using one single energy level at 1 eV above the valence band, a capture cross section of 1 x 10(-15) cm(2), and a trap concentration of 2 x 10(12) cm(-2). Simulations have been performed at different temperatures to validate the model and characterize the temperature behavior of SiC BJTs. An analysis of the carrier concentration at different collector currents has been performed in order to describe the mechanisms of the current gain fall-off at a high collector current both at room temperature and high temperatures. At room temperature, high injection in the base ( which has a doping concentration of 3 x 10(17) cm(-3)) and forward biasing of the base-collector junction occur simultaneously, causing an abrupt drop of the current gain. At higher temperatures, high injection in the base is alleviated by the higher ionization degree of the aluminum dopants, and then forward biasing of the base-collector junction is the acting mechanism for the current gain fall-off. Forward biasing of the base-collector junction can also explain the reduction of the knee current with increasing temperature by means of the negative temperature dependence of the mobility.
18.	Buono, Benedetto, et al. (författare) Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs 2010 Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 645-648, s. 1061-1064 Tidskriftsartikel (refereegranskat)abstract The current gain of 4H-SiC BJTs has been modeled using interface traps between SIC and SiO2 to describe surface recombination, by a positive temperature dependence of the carrier lifetime in the base region and by bandgap narrowing in the emitter region. The interface traps have been modeled by one single level at 1 eV above the valence band, with capture cross section of 1 x 10(-15) cm(2) and concentration of 2 x 10(12) cm(-2). The temperature behavior of SiC BJTs has been simulated and the results have been compared with measurements. An analysis of the carrier concentration has been performed in order to describe the mechanisms for fall-off of the current gain at high collector current. At room temperature high injection in the base and forward biasing of the base-collector junction occur simultaneously causing an abrupt drop of the current gain. At higher temperatures high injection in the base is alleviated by the higher ionization degree of the aluminum dopants, and then forward biasing of the base-collector junction is the only acting mechanism for the current gain fall-off at high collector current. This mechanism and the negative temperature dependence of the carrier mobility can also explain the reduction of the knee current for gain fall-off with increasing temperature. Simulations with different emitter widths have been also performed and analyzed to characterize the emitter size effect. Higher current density caused by reducing the emitter width introduces higher carrier recombination in the emitter region, leading to a reduction of the current gain.
19.	Capriata, Corrado Carlo Maria (författare) Dynamics and Intrinsic Variability of Spintronic Devices 2023 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract Spintronics is a scientific domain focusing on utilizing electron spin for information processing. This is the element that distinguishes it from electronics, which only utilizes the charge of electrons. A common purpose of spintronic devices is to implement additional functionalities to state-of-the-art Complementary Metal-Oxide Semiconductor (CMOS) technology. The aim of this work was to assess the intrinsic variabilities of Nano-Constriction Spin Hall Nano-Oscillators (NC-SHNOs) and the dynamics of Perpendicular Magnetic Tunnel Junctions (pMTJs). The first part of the thesis focuses on NC-SHNO and two-dimensional arrays. They are nanometer-sized microwave oscillators, allowing for a wide frequency tuning range, and are compatible with CMOS Back End Of Line (BEOL). These devices are based on a heavy metal/ferromagnetic bilayer. Environmental conditions during processing, fabrication techniques, and temperature of operation can all create variabilities in the device's functioning. Crystallization grains naturally form during the sputtering of the metals. Atomic Force Microscope (AFM) characterization showed the grains being of different shapes, about 30 nm in size. Here, the aim was to develop a simulation technique based on importing the measured grain structure into micromagnetic simulations. Their results match the device-to-device variability and multi-modal behavior found in microwave measurements. Moreover, the presence of grains influences the synchronization of the arrays.The second part of this work focuses on pMTJ. These non-volatile memory elements have two metastable states, parallel (P) and antiparallel (AP), separated by an energy barrier Eb. Here, the aim was to show their potential as True Random Number Generators (TRNGs). A pulse-activated measurement set-up was used to realize random bitstreams. The randomness was confirmed by the National Institute of Standards and Technology Statistical Testing Suite (NIST-STS). After one whitening Exclusive OR (XOR) stage, all tests were successfully passed.The assessment was completed with the development of a model describing both macrospin and domain wall-mediated magnetization reversals, i.e. switching between P and AP. The analysis of the reversal dynamics was carried out with micromagnetic simulations and String Method calculations. As expected, Eb is lowered by the field and by decreasing the device size. This allows for faster fluctuations, marking the device as a potential TRNG. Both the switching attempt frequency and the energy barrier were explored by finite-temperature micromagnetic simulations.This thesis shows the potential of realistic simulations combined with measurements to assess oscillators. It also shows the efficacy of spintronic devices as 10s-MHz TRNG.
20.	Capriata, Corrado Carlo Maria, et al. (författare) Energy Barriers for Thermally Activated Magnetization Reversal in Perpendicularly Magnetized Nanodisks in a Transverse Field 2023 Annan publikation (övrigt vetenskapligt/konstnärligt)abstract Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams.
21.	Capriata, Corrado Carlo Maria, et al. (författare) Enhanced Stochastic Bit Rate for Perpendicular Magnetic Tunneling Junctions in a Transverse Field 2023 Annan publikation (övrigt vetenskapligt/konstnärligt)abstract Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz.
22.	Capriata, Corrado Carlo Maria, et al. (författare) Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability 2022 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 43:2, s. 312-315 Tidskriftsartikel (refereegranskat)abstract Spin-Hall nano-oscillators are a promising class of microwave spintronic devices with potential applications in RF/microwave communication and neuromorphic computing. The nano-constriction spin-Hall nano-oscillators (NC-SHNO) have relatively high power, narrow linewidth, and low drive current. Several synchronization schemes e.g. arrays of spin-wave coupled oscillators have been proposed for more stable operation and higher output power. For such arrays, it is crucial to have good oscillator stability and small device-to-device variability. Here, a micromagnetic simulation technique is proposed that includes realistic material properties and hence enables variability and modal stability to be investigated. It is demonstrated, using both measurements and simulation, that the presence of physical grains in the free magnetic layer can induce multiple oscillation modes or frequency sidebands. Our investigation could help in the development of more stable NC-SHNOs that would enable oscillator arrays with stronger synchronization. Author
23.	Chen, Shiqian, et al. (författare) Ultrafast metal-free microsupercapacitor arrays directly store instantaneous high-voltage electricity from mechanical energy harvesters 2024 Ingår i: Advanced Science. - : Wiley. - 2198-3844. ; 11:22 Tidskriftsartikel (refereegranskat)abstract Harvesting renewable mechanical energy is envisioned as a promising and sustainable way for power generation. Many recent mechanical energy harvesters are able to produce instantaneous (pulsed) electricity with a high peak voltage of over 100 V. However, directly storing such irregular high-voltage pulse electricity remains a great challenge. The use of extra power management components can boost storage efficiency but increase system complexity. Here utilizing the conducting polymer PEDOT:PSS, high-rate metal-free micro-supercapacitor (MSC) arrays are successfully fabricated for direct high-efficiency storage of high-voltage pulse electricity. Within an area of 2.4 × 3.4 cm2 on various paper substrates, large-scale MSC arrays (comprising up to 100 cells) can be printed to deliver a working voltage window of 160 V at an ultrahigh scan rate up to 30 V s−1. The ultrahigh rate capability enables the MSC arrays to quickly capture and efficiently store the high-voltage (≈150 V) pulse electricity produced by a droplet-based electricity generator at a high efficiency of 62%, significantly higher than that (<2%) of the batteries or capacitors demonstrated in the literature. Moreover, the compact and metal-free features make these MSC arrays excellent candidates for sustainable high-performance energy storage in self-charging power systems.
24.	Chen, Tingsu, et al. (författare) Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part I : Analytical Model of the MTJ STO 2015 Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 62:3, s. 1037-1044 Tidskriftsartikel (refereegranskat)abstract Magnetic tunnel junction (MTJ) spin torque oscillators (STOs) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate the potential uses of MTJ STO technology in various applications, an analytical model that can capture MTJ STO's characteristics, while enabling system-and circuit-level designs, is of great importance. An analytical model based on macrospin approximation is necessary for these designs since it allows implementation in hardware description languages. This paper presents a new macrospin-based, comprehensive, and compact MTJ STO model, which can be used for various MTJ STOs to estimate the performance of MTJ STOs together with their application-specific integrated circuits. To adequately present the complete model, this paper is divided into two parts. In Part I, the analytical model is introduced and verified by comparing it against measured data of three different MTJ STOs, varying the angle and magnitude of the magnetic field, as well as the DC biasing current. The proposed analytical model is suitable for being implemented in Verilog-A and used for efficient simulations at device, circuit, and system levels. In Part II, the full Verilog-A implementation of the analytical model with accurate phase noise generation is presented and verified by simulations.
25.	Chen, Tingsu, et al. (författare) Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part II : Verilog-A Model Implementation 2015 Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 62:3, s. 1045-1051 Tidskriftsartikel (refereegranskat)abstract The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various applications. In Part I of this paper, an analytical model based on the macrospin approximation has been introduced and verified by comparing it with the measurements of three different MTJ STOs. In Part II, the full Verilog-A implementation of the proposed model is presented. To achieve a reliable model, an approach to reproducing the phase noise generated by the MTJ STO has been proposed and successfully employed. The implemented model yields a time domain signal, which retains the characteristics of operating frequency, linewidth, oscillation amplitude, and DC operating point, with respect to the magnetic field and applied DC current. The Verilog-A implementation is verified against the analytical model, providing equivalent device characteristics for the full range of biasing conditions. Furthermore, a system that includes an MTJ STO and CMOS RF circuits is simulated to validate the proposed model for system-and circuit-level designs. The simulation results demonstrate that the proposed model opens the possibility to explore STO technology in a wide range of applications.
26.	Chen, Tingsu, et al. (författare) Integration of GMR-based spin torque oscillators and CMOS circuitry 2015 Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 111, s. 91-99 Tidskriftsartikel (refereegranskat)abstract This paper demonstrates the integration of giant magnetoresistance (GMR) spin torque oscillators (STO) with dedicated high frequency CMOS circuits. The wire-bonding-based integration approach is employed in this work, since it allows easy implementation, measurement and replacement. A GMR STO is wire-bonded to the dedicated CMOS integrated circuit (IC) mounted on a PCB, forming a (GMR STO + CMOS IC) pair. The GMR STO has a lateral size of 70 nm and more than an octave of tunability in the microwave frequency range. The proposed CMOS IC provides the necessary bias-tee for the GMR STO, as well as electrostatic discharge (ESD) protection and wideband amplification targeting high frequency GMR STO-based applications. It is implemented in a 65 nm CMOS process, offers a measured gain of 12 dB, while consuming only 14.3 mW and taking a total silicon area of 0.329 mm(2). The measurement results show that the (GMR STO + CMOS IC) pair has a wide tunability range from 8 GHz to 16.5 GHz and improves the output power of the GMR STO by about 10 dB. This GMR STO-CMOS integration eliminates wave reflections during the signal transmission and therefore exhibits good potential for developing high frequency GMR STO-based applications, which combine the features of CMOS and STO technologies. (C) 2015 Elsevier Ltd. All rights reserved.
27.	Chen, Tingsu, et al. (författare) Spin-Torque and Spin-Hall Nano-Oscillators 2016 Ingår i: Proceedings of the IEEE. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9219 .- 1558-2256. ; 104:10, s. 1919-1945 Tidskriftsartikel (refereegranskat)abstract This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.
28.	Chen, Tingsu, 1987-, et al. (författare) Spin-Torque and Spin-Hall Nano-Oscillators Ingår i: Proceedings of the IEEE. - 0018-9219 .- 1558-2256. Tidskriftsartikel (refereegranskat)abstract This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.
29.	Di Benedetto, Luigi, et al. (författare) Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers 2009 Ingår i: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. - 9781424443536 ; , s. 101-104 Konferensbidrag (refereegranskat)abstract This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.
30.	Driussi, F., et al. (författare) On the electron mobility enhancement in biaxially strained Si MOSFETs 2008 Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 52:4, s. 498-505 Tidskriftsartikel (refereegranskat)abstract This paper reports a detailed experimental and simulation study of the electron mobility enhancement induced by the biaxial strain in (001) silicon MOSFETs. To this purpose, ad hoc test structures have been fabricated on strained Si films grown on different SiGe virtual substrates and the effective mobility of the electrons has been extracted. To interpret the experimental results, we performed simulations using numerical solutions of Schroedinger-Poisson equations to calculate the charge and the momentum relaxation time approximation to calculate the mobility. The mobility enhancement with respect to the unstrained Si device has been analyzed as a function of the Ge content of SiGe substrates and of the operation temperature.
31.	Eklund, Anders, et al. (författare) Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field 2014 Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:9, s. 092405- Tidskriftsartikel (refereegranskat)abstract The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18-25GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films.
32.	Eklund, Anders J., et al. (författare) Triple mode-jumping in a spin torque oscillator 2013 Ingår i: 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. - New York : IEEE conference proceedings. - 9781479906680 ; , s. 6578965- Konferensbidrag (refereegranskat)abstract In a nano-contact Co/Cu/NiFe spin torque oscillator, mode-jumping between up to three frequencies within 22.5-24.0 GHz is electrically observed in the time domain. The measurements reveal toggling between two states with differing oscillation amplitude, of which the low-amplitude state is further divided into two rapidly alternating modes. Analysis of the mode dwell time statistics and the total time spent in each mode is carried out, and it is found that in both aspects the balance between the modes is greatly altered with the DC drive current.
33.	Eklund, Anders, 1986- (författare) Microwave Frequency Stability and Spin Wave Mode Structure in Nano-Contact Spin Torque Oscillators 2016 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract The nano-contact spin torque oscillator (NC-STO) is an emerging device for highly tunable microwave frequency generation in the range from 0.1 GHz to above 65 GHz with an on-chip footprint on the scale of a few μm. The frequency is inherent to the magnetic material of the NC-STO and is excited by an electrical DC current by means of the spin torque transfer effect. Although the general operation is well understood, more detailed aspects such as a generally nonlinear frequency versus current relationship, mode-jumping and high device-to-device variability represent open questions. Further application-oriented questions are related to increasing the electrical output power through synchronization of multiple NC-STOs and integration with CMOS integrated circuits.This thesis consists of an experimental part and a simulation part. Experimentally, for the frequency stability it is found that the slow but strong 1/f-type frequency fluctuations are related to the degree of nonlinearity and the presence of perturbing, unexcited modes. It is also found that the NC-STO can exhibit up to three propagating spin wave oscillation modes with different frequencies and can randomly jump between them. These findings were made possible through the development of a specialized microwave time-domain measurement circuit. Another instrumental achievement was made with synchrotron X-rays, where we image dynamically the magnetic internals of an operating NC-STO device and reveal a spin wave mode structure with a complexity significantly higher than the one predicted by the present theory.In the simulations, we are able to reproduce the nonlinear current dependence by including spin wave-reflecting barriers in the nm-thick metallic, magnetic free layer. A physical model for the barriers is introduced in the form of metal grain boundaries with reduced magnetic exchange coupling. Using the experimentally measured average grain size of 30 nm, the spin wave mode structure resulting from the grain model is able to reproduce the experimentally found device nonlinearity and high device-to-device variability.In conclusion, the results point out microscopic material grains in the metallic free layer as the reason behind the nonlinear frequency versus current behavior and multiple propagating spin wave modes and thereby as a source of device-to-device variability and frequency instability.
34.	Eklund, Anders, 1986-, et al. (författare) Nonlinearity, frequency stability and device-to-device variability in nano-contact spin torque oscillators with grainy thin films Annan publikation (övrigt vetenskapligt/konstnärligt)abstract In nano-contact spin torque oscillators with a frequency range of 10-65 GHz, the propagating spin wave mode attracts interest due both to its high frequency stability and prospective use in magnonic devices. Its dependence of the frequency on the bias current however displays device-to-device variability on the order of several hundred MHz, with device specific nonlinearities that can be either continuous or discontinuous and have negative impact on the frequency stability. A model for this behavior is however still lacking. By using micromagnetic simulations, we investigate the impact of imperfections in the spin wave-carrying free magnetic layer and find that nonlinearities can be created when the propagating spin wave is reflected back to the active region. The oscillation then self-locks at the frequency of the resonant wavelength, resulting in a standing spin wave pattern. Simulations including nine randomly generated film structures with 30 nm-sized grains and exchange-reduced inter-grain boundaries give qualitative and partially quantitative agreement with experimental measurements. The results point out the spin wave-reflecting grain boundaries as a source of device nonlinearity, manufacturing variability and frequency destabilization.
35.	Ekström, Mattias, 1990-, et al. (författare) High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators 2019 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 40:5, s. 670-673 Tidskriftsartikel (refereegranskat)abstract Digital electronics in SiC find use in high-temperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO2-film, post-annealed at lowtemperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200 °C. The PMOS requires reduced threshold voltage in order to enable long term reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing.
36.	Ekström, Mattias, 1990- (författare) SiC CMOS and memory devices for high-temperature integrated circuits 2019 Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. Silicon carbide (4H-SiC) integrated circuits target high-temperature electronics, although the current integration level is low due to immature process technology and non-volatile memory has not been demonstrated. SiC CMOS would allow highly dense integrated circuits for microcontrollers and random access memory (RAM). Ferroelectric capacitors could serve as high-temperature non-volatile memory devices.In this work, significant efforts have been taken to develop a SiC CMOS process and ferroelectric capacitors. SiC CMOS is challenging and mostly unexplored technology. A recessed channel transistor design was investigated. Several key challenges in the SiC CMOS process was identified, leading to a polyoxide-based field oxide, a deposited gate-dielectric process, reproducible Ni-Al semi-salicide contacts to p-type SiC, and a high-temperature CMP enabled two-level TiW-based metallisation. Self-aligned cobalt silicide contacts were investigated, and was found to produce low-resistance ohmic contactsto n-type SiC. Inverters and ring oscillators that operate at 200 °C were achieved in this recessed channel SiC CMOS process. It was found that steam-treating the gate oxide interface produced both NMOS and PMOS transistors that could be used for circuits. However, the reliability suffered due to poor PMOS performance. Wafer-level statistical measurements of interface trap density was performed on NMOS transistors treated by steam, dry oxygen and nitrided by nitrous oxide. A deposition and etch process for ferroelectric capacitors, using vanadium-doped bismuth titanate as ferroelectric material, was developed. High-temperature operation was demonstrated, and several scalability challenges for the etched process was identified.The implication of this thesis is that while operational recessed channel SiC CMOS was demonstrated at high temperature, more promising technologies like ion implanted bulk transistors should be investigated instead, due to the numerous difficulties in optimising both NMOS and PMOS with this recessed channel design. The presented recessed channel process technology can be used to fabricate short channel length NMOS-logic. Ferroelectric capacitors is a good candidate for high-temperature non-volatile memory applications, although more work is needed in the CMOS integration.
37.	Ekström, Mattias, 1990-, et al. (författare) Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low Voltage n-Channel SiC MOSFETs 2020 Ingår i: Silicon Carbide and Related Materials 2019. - : Trans Tech Publications, Ltd.. ; , s. 642-651 Konferensbidrag (refereegranskat)abstract Control of defects at or near the MOS interface is paramount for device performance optimization. The SiC MOS system is known to exhibit two types of MOS defects,defects at the SiO2/SiC interface and defects inside of the gate oxide that can trap channel charge carriers. Differentiating these two types can be challenging. In this work, we use several electrical measurement techniques to extract and separate these two types of defects. The charge pumping method and the ultrafast pulsed I-V method are given focus, as they are independent methods for extracting the defects inside the gate oxide. Defects are extracted from low voltage n-channel MOSFETs with differently processed gate oxides: steam-treatment, dry oxidation and nitridation. Ultrafast pulsed I-V and charge pumping gives comparable results. The presented analysis of the electrical characterization methods is of use for SiC MOSFET process development.
38.	Erdal, Suvar, et al. (författare) High frequency performance of SiGeCHBTs with selectively & non-selectively grown collector 2004 Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T114, s. 138-141 Tidskriftsartikel (refereegranskat)abstract Two high-frequency heterojunction bipolar transistor (HBT) architectures based on SiGeC have been fabricated and characterized. Different collector designs were applied either by using selective epitaxial growth doped with phosphorous or by non-selective epitaxial growth doped with arsenic. Both designs have a non-selectively deposited SiGeC base doped with boron and a poly-crystalline emitter doped with phosphorous. Both HBT designs exhibit similar electrical characteristics with a peak DC current gain of around 1600 and a BVCEO of 1.8V. The cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)) vary from 40-80 GHz and 15-30 GHz, respectively, depending on lateral design relations. Good high frequency performance for a device with a selectively grown collector is demonstrated for the first time.
39.	Farese, Luca, et al. (författare) Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence 2010 Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2009. ; , s. 1037-1040 Konferensbidrag (refereegranskat)abstract SiC power bipolar junction transistors (BJTs), for high voltage applications, have been studied under elevated temperature and electrical stress conditions. Electroluminescence has been used to capture effects of defect motion and growth, in complete transistor structures, leading to a quantifiable degradation in the electrical performance. The observed degradation of current gain (beta) and on-resistance (RON) was relatively modest and saturated after a limited stress time, resulting in stable device performance. The characteristic wavelength (450 nm) of the electroluminescence, or light emission, in the visual and near infrared (NIR) range, coupled to the shape of the defects indicates that basal plane dislocations and stacking faults are involved.
40.	Fioretos, Thoas, et al. (författare) Clinical impact of breakpoint position within M-bcr in chronic myeloid leukemia 1993 Ingår i: Leukemia. - 1476-5551. ; 7:8, s. 1225-1231 Tidskriftsartikel (refereegranskat)abstract We have analyzed the M-bcr breakpoint position in 133 Philadelphia-positive chronic myeloid leukemia patients and correlated the findings with clinical, hematologic, and cytogenetic data. We also investigated the splicing pattern of the BCR-ABL mRNA in 30 patients, using reverse transcriptase PCR. No statistically significant differences were found between breakpoint position within M-bcr and clinical parameters at diagnosis, the karyotypic evolution pattern, or the leukemic phenotype during blast crisis. Furthermore, the breakpoint position within M-bcr did not correlate with the duration of chronic phase or survival time. When the splicing pattern of the BCR-ABL mRNA was compared with the results of the genomic breakpoint mapping, it was found that approximately 60% (8/14) of the patients with a 5' break expressed b2a2 fusion mRNA, whereas all patients (10/10) with a 3' break expressed b3a2 BCR-ABL mRNA.
41.	Ghandi, Reza, et al. (författare) High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension 2009 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 30:11, s. 1170-1172 Tidskriftsartikel (refereegranskat)abstract Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of similar to 1.2 x 10(13) cm(-2) in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single-and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.
42.	Haralson, Erik, et al. (författare) Device design for a raised extrinsic base SiGe bipolar technology 2004 Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:11-okt, s. 1927-1931 Tidskriftsartikel (refereegranskat)abstract The impact of emitter, inside spacer, and SIC lateral scaling on the AC and DC performance of a raised extrinsic base SiGe HBT has been investigated using the ISE TCAD simulation package and design of experiments methods. Strong first order effects for all three variables were observed while the interactions of the variables had a weaker effect. It was found that as the emitter size shrinks towards 0.1 mum the impact of changes to inside spacer and SIC width on the current gain increased. The response surface design led to an optimized simulated transistor featuring f(T) and f(MAX) values of 214 and 332 GHz, respectively.
43.	Haralson, Erik, et al. (författare) Influence of self heating in a BiCMOS on SOI technology 2004 Ingår i: ESSCIRC 2004. - NEW YORK : IEEE. - 0780384784 ; , s. 337-340 Konferensbidrag (refereegranskat)abstract Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.
44.	Haralson, Erik, et al. (författare) NiSi integration in a non-selective base SiGeCHBT process 2005 Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 8:03-jan, s. 245-248 Tidskriftsartikel (refereegranskat)abstract A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
45.	Haralson, Erik, et al. (författare) The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter 2004 Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:1-4, s. 330-335 Tidskriftsartikel (refereegranskat)abstract A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exhibits a high current gain (beta) of 1700 and a BVCEO of 1.8 V. The peak cutoff frequency (f(T)) and maximum oscillation frequency (f(MAX)) are 73 and 17 GHz, respectively. The effect of emitter overlap on f(T) was minimal, but it had a strong impact on dc performance. LOCOS opening size strongly impacted both ac and dc performance. In addition, the effect of carbon, base cap thickness, and rapid thermal anneal (RTA) temperature on the emitter-base (E-B) junction formation was studied.
46.	Hou, Shuoben, et al. (författare) A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C 2020 Ingår i: IEEE Journal of the Electron Devices Society. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 2168-6734. ; 8:1, s. 116-121 Tidskriftsartikel (refereegranskat)abstract An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 ( $16\times 16$ ) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 degrees C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art.
47.	Hussain, Muhammad Waqar, 1985-, et al. (författare) A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology 2018 Ingår i: IEEE Electron Device Letters. - : IEEE Press. - 0741-3106 .- 1558-0563. ; 39:6, s. 855-858 Tidskriftsartikel (refereegranskat)abstract This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.
48.	Hussain, Muhammad Waqar, 1985-, et al. (författare) A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications 2019 Ingår i: IEEE Journal of the Electron Devices Society. - : Institute of Electrical and Electronics Engineers (IEEE). - 2168-6734. ; 7:1, s. 191-195 Tidskriftsartikel (refereegranskat)abstract This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.
49.	Hussain, Muhammad Waqar, 1985-, et al. (författare) An Intermediate Frequency Amplifier for High-Temperature Applications 2018 Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 65:4, s. 1411-1418 Tidskriftsartikel (refereegranskat)abstract This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.
50.	Hussain, Muhammad Waqar, 1985-, et al. (författare) Silicon Carbide BJT Oscillator Design Using S-Parameters 2018 Ingår i: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.. Konferensbidrag (refereegranskat)abstract Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation isfurther aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, analternative small-signal, S-parameter based design method can be employed directly without goinginto complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connectedby RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

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