| 1. |
- Agui, A, et al.
(författare)
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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
- 2000
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Ingår i: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0169-4332. ; 166:1-4, s. 309-312
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Tidskriftsartikel (refereegranskat)abstract
- A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, wh
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| 2. |
- Agui, A., et al.
(författare)
-
Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
- 2000
-
Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 166:1-4, s. 309-312
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Tidskriftsartikel (refereegranskat)abstract
- A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L2,3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations.
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| 3. |
- Mankefors, S., et al.
(författare)
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Ab initio calculations of soft-x-ray emission from Si(100) layers buried in GaAs
- 1998
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Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 58:16, s. 10551-10556
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Tidskriftsartikel (refereegranskat)abstract
- Calculations of soft-x-ray emission spectra from Si(100) layers buried in GaAs are reported. The local densities of states for Si in As and Ga sites are found to be very different. By comparison with experimental data, this difference allows us to determine the relative amounts of Si in the two types of sites. In the case of a single Si layer we find that 63 (±5)% of the buried atoms are in Ga sites.
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| 4. |
- Mankefors, S., et al.
(författare)
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Theoretical investigation of soft x-ray emission from a Si(100) layer buried in GaAs
- 1998
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 49:3, s. 181-184
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Tidskriftsartikel (refereegranskat)abstract
- Calculations of the soft x-ray emission spectrum have been carried out on a buried Si(100) layer in GaAs and compared with experimental data. We find that Si occupies Ga- as well as As-sites and that the local density of states is different for these two cases.
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| 5. |
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| 6. |
- Mankefors, S., et al.
(författare)
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Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs
- 2000
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Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 61:8, s. 5540-5545
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by ab initio calculations. Unique experimental soft-x-ray emission spectra are explained in terms of interface effects and changes with layer thickness are found in the density of states. Only the central layer in the 5-ML geometry is bulklike. A valence-band offset of 0.53 eV is also found for this structure, while no offset exists in the 1- and 2-ML cases. Very good agreement is achieved between theory and experiment.
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| 7. |
- Mankefors, S., et al.
(författare)
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Theoretical investigations of As overlayers on InP(110) surfaces
- 1997
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Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 56:24, s. 15847-15852
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Tidskriftsartikel (refereegranskat)abstract
- As adsorption and interaction with InP(110) is investigated by means of total-energy minimization calculations. We find that the As-P exchanged configuration has higher energy than the As/InP(110) epitaxially continued layer structure (ECLS), for all types of As reservoirs considered. In the presence of an additional As layer in ECLS (i.e., 1.5 ML adsorbed As), however, the exchanged configuration is only slightly higher in energy than the nonexchanged one. We conclude that the As-P exchange process is energetically unfavorable, and should in any case not be complete at room temperature, as suggested in a recent report. Our conclusion is supported by results of a photoemission study, including As adsorption, desorption, and redeposition, according to which the process is nonreversible.
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| 8. |
- Nilsson, PO, et al.
(författare)
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Electronic structure of ultrathin Ge layers buried in Si(100)
- 2001
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 64:11
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.
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| 9. |
- Nilsson, PO, et al.
(författare)
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Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
- 2001
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Ingår i: PHYSICAL REVIEW B. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 6411:11, s. 5306-+ Language: English
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular
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