| 1. |
- Coll, M., et al.
(författare)
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Towards Oxide Electronics: a Roadmap
- 2019
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 482, s. 1-93
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Tidskriftsartikel (refereegranskat)abstract
- At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
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| 2. |
- Berner, G., et al.
(författare)
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LaAlO3/SrTiO3 oxide heterostructures studied by resonant inelastic x-ray scattering
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 82:24, s. 241405-
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Tidskriftsartikel (refereegranskat)abstract
- We report the application of resonant inelastic X-ray scattering to explore the nature of the single conducting interface in the oxide heterostructure LaAlO/sub 3//SrTiO/sub 3/. From the Ti 3d crystal-field excitations measured at the Ti L/sub 3/ resonance we not only derive information on the local geometry at the interface but are also able to follow the evolution of the sheet carrier density with the thickness of the LaAlO/sub 3/ overlayer. These findings confirm after calibration to previous hard X-ray photoelectron spectroscopy measurements that the charge density from spectroscopy exceeds the one derived from Hall-effect measurements, indicating the coexistence of itinerant /i and/ localized Ti 3d electrons at the interface. On the other hand, we observe a saturation of the charge-carrier concentration above a LaAlO/sub 3/ thickness of 6 unit cells at ~1*10/sup 14/ cm/sup -2/, well below the canonical value for ideal electronic reconstruction.
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| 3. |
- Carlson, A. D., et al.
(författare)
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A new evaluation of the neutron data standards
- 2017
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Ingår i: ND 2016. - : EDP Sciences. - 9782759890200
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Konferensbidrag (refereegranskat)abstract
- Evaluations are being done for the H(n,n), 6Li(n,t), 10B(n,αγ), 10B(n,α), C(n,n), Au(n,γ), 235U(n,f) and 238U(n,f) standard cross sections. Evaluations are also being done for data that are not traditional standards including: the Au(n,γ) cross section at energies below where it is considered a standard; reference cross sections for prompt gamma-ray production in fast neutron-induced reactions; reference cross sections for very high energy fission cross sections; the 235U thermal neutron fission spectrum and the 252Cf spontaneous fission neutron spectrum and the thermal constants.
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| 4. |
- Carlson, A. D., et al.
(författare)
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Evaluation of the Neutron Data Standards
- 2018
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Ingår i: Nuclear Data Sheets. - : Elsevier BV. - 0090-3752 .- 1095-9904. ; 148, s. 143-188
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Tidskriftsartikel (refereegranskat)abstract
- With the need for improving existing nuclear data evaluations, (e.g., ENDF/B-VIII.0 and JEFF-3.3 releases) the first step was to evaluate the standards for use in such a library. This new standards evaluation made use of improved experimental data and some developments in the methodology of analysis and evaluation. In addition to the work on the traditional standards, this work produced the extension of some energy ranges and includes new reactions that are called reference cross sections. Since the effort extends beyond the traditional standards, it is called the neutron data standards evaluation. This international effort has produced new evaluations of the following cross section standards: the H(n,n), Li-6(n,t), B-10(n, alpha), B-10(n,alpha(1)gamma), C-nat(n,n), Au(n,gamma), U-235(n,f) and U-238(n,f). Also in the evaluation process the U-238(n,gamma) and Pu-239(n,f) cross sections that are not standards were evaluated. Evaluations were also obtained for data that are not traditional standards: the Maxwellian spectrum averaged cross section for the Au(n,gamma) cross section at 30 keV; reference cross sections for prompt gamma-ray production in fast neutron-induced reactions; reference cross sections for very high energy fission cross sections; the Cf-252 spontaneous fission neutron spectrum and the U-235 prompt fission neutron spectrum induced by thermal incident neutrons; and the thermal neutron constants. The data and covariance matrices of the uncertainties were obtained directly from the evaluation procedure.
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