SwePub - search: WFRF:(Maximov Ivan)

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1.	Lewen, R., et al. (author) High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch 2002 In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2398-2402 Journal article (peer-reviewed)abstract We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated.
2.	Li, Jun, et al. (author) Tolerance of metal halide perovskites to mechanical treatment enables the fabrication of patterned luminescence nano- and microstructures 2022 In: Materials Advances. - : Royal Society of Chemistry (RSC). - 2633-5409. ; 27:35 Journal article (peer-reviewed)abstract Metal halide perovskites have shown a great performance in a broad range of optoelectronic devices. The variety of preparation methods makes perovskites especially attractive, yet preparation of complex nanostructures based on these materials remains challenging. Here we present a template assisted method allowing to achieve any pre-designed arrangement of methylammonium lead triiodide (MAPbI3) polycrystalline patterns with the spatial resolution defined by the template. We utilized a Si/SiO2 wafer with circular 180 nm deep recesses with diameters ranging from 200 to 1600 nm as a template. A polycrystalline perovskite powder was obtained by scratching off a thin perovskite film and mechanically introduced into the patterned template as a pigment. Scanning electron microscopy revealed that the recesses are filled with tightly packed sub-20 nm crystallites. Considering that the spin-coated film used as a source of MAPbI3 consisted of grains up to 2000 nm in diameter suggests that the initially prepared grains were crashed by rubbing to much smaller crystallites. In spite of this harsh mechanical treatment, the filled recesses showed a strong photoluminescence signal, demonstrating the applicability of this approach for the fabrication of diverse nanophotonic structures.
3.	Martin, TP, et al. (author) The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards 2003 In: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036. ; 34:3-6, s. 179-184 Journal article (peer-reviewed)abstract We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
4.	Maximov, Ivan, et al. (author) Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs 2002 In: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668 Journal article (peer-reviewed)abstract We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
5.	Maximov, Ivan, et al. (author) Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP 2003 In: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202 Journal article (peer-reviewed)abstract We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
6.	Shorubalko, Ivan, et al. (author) A novel frequency-doubling device based on three-terminal ballistic junction 2002 In: Device Research Conference (Cat. No.02TH8606). - 0780373170 ; , s. 159-160 Conference paper (peer-reviewed)abstract Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
7.	Shorubalko, Ivan, et al. (author) A novel frequency-multiplication device based on three-terminal ballistic junction 2002 In: IEEE Electron Device Letters. - 0741-3106. ; 23:7, s. 377-379 Journal article (peer-reviewed)abstract In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
8.	Xu, Hongqi, et al. (author) A novel device principle for nanoelectronics 2002 In: Materials Science and Engineering C: Materials for Biological Applications. - 0928-4931. ; 19:1-2, s. 417-420 Journal article (peer-reviewed)abstract We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
9.	Xu, Hongqi, et al. (author) Novel nanoelectronic triodes and logic devices with TBJs 2004 In: IEEE Electron Device Letters. - 0741-3106. ; 25:4, s. 164-166 Journal article (peer-reviewed)abstract In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
10.	Xu, Hongqi, et al. (author) Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics 2002 In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Conference paper (peer-reviewed)abstract A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed
11.	Abdel, Naseem, et al. (author) Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions 2013 In: IEEE Transactions on Nuclear Science. - 0018-9499. ; 60:2, s. 1182-1188 Journal article (peer-reviewed)abstract This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.
12.	Abdel, N. S., et al. (author) Efficient ultra-thin transmission silicon detectors for a single-ion irradiation system at the Lund Ion Beam Analysis Facility 2014 In: Journal of Instrumentation. - 1748-0221. ; 9 Journal article (peer-reviewed)abstract This paper describes the fabrication of efficient ultra-thin silicon transmission detectors for use as pre-cell detectors in single-ion experiments on living cells at the Lund Ion Beam Analysis Facility. More than 40 detectors of different thicknesses down to 5 mu m have been fabricated and packaged. The main design considerations were very low leakage current (below 9 nA) and low full depletion voltage at biases less than 0.5 V at room temperature. In addition, we have shown that cooling the device can reduce the leakage current to 3 nA. The experimental testing of the pre-cell detection system is based on counting the passage of ions through the transmission (Delta E) detector before hitting the stopping (E) detector placed behind it, to ensure the accurate delivery of specific doses of radiation to the sample. Optimal detection of the fabricated detectors for the passage of an external beam of 2.2 MeV protons was obtained by cooling the device to below 2 degrees C. Cooling the Delta E detectors provides up to 20% better energy resolution and up to 98% detection efficiency for 2.2 MeV protons. The development of this kind of efficient pre-cell detector enables a range of new experiments to be conducted on thick biological samples.
13.	Adolph, David, et al. (author) An alignment procedure for nanoimprint lithography at the sub-20 nm level 2005 In: Book of extended abstracts: 49th Intl Conf on Electron, Ion, and Photon Beam Technol and Nanofabr, Orlando, Fl, USA (2005). Conference paper (other academic/artistic)
14.	Anokhina, Ksenia, et al. (author) Metal-assisted chemical etching of Si for fabrication of nanoimprint stamps 2011 Conference paper (peer-reviewed)
15.	Asif, Muhammad, et al. (author) Comparison of UV-curable materials for high-resolution polymer nanoimprint stamps 2022 In: Micro and Nano Engineering. - : Elsevier BV. - 2590-0072. ; 14 Journal article (peer-reviewed)abstract We present a systematic comparison of four resins for nanoimprint intermediate polymer stamps, the standard IPS material, OrmoStamp and two new polymers GMN-PS90 (foil) and GMN-PS40 (liquid). The new polymers are based on acrylated silane and offer sufficiently high Young’s modulus and low shrinkage to provide good me chanical stability during the imprint process of well-separated structures. No anti-sticking treatment requires for those new polymers and they can be used at room temperature, which results in better stability of the nano imprint process. The nanoimprint experiments using four resins showed a superior performance of the GMNPS90 material in both single-layer and double-layer imprint process with resolution after lift-off about 30 nm.
16.	Balocco, C, et al. (author) Microwave detection at 110 GHz by nanowires with broken symmetry 2005 In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 5:7, s. 1423-1427 Journal article (peer-reviewed)abstract By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.
17.	Beck, Dani, et al. (author) Adipose tissue distribution from body MRI is associated with cross-sectional and longitudinal brain age in adults 2022 In: NeuroImage. - : Elsevier Science Ltd. - 2213-1582. ; 33 Journal article (peer-reviewed)abstract There is an intimate body-brain connection in ageing, and obesity is a key risk factor for poor cardiometabolic health and neurodegenerative conditions. Although research has demonstrated deleterious effects of obesity on brain structure and function, the majority of studies have used conventional measures such as waist-to-hip ratio, waist circumference, and body mass index. While sensitive to gross features of body composition, such global anthropometric features fail to describe regional differences in body fat distribution and composition. The sample consisted of baseline brain magnetic resonance imaging (MRI) acquired from 790 healthy participants aged 18-94 years (mean +/- standard deviation (SD) at baseline: 46.8 +/- 16.3), and follow-up brain MRI collected from 272 of those individuals (two time-points with 19.7 months interval, on average (min = 9.8, max = 35.6). Of the 790 included participants, cross-sectional body MRI data was available from a subgroup of 286 participants, with age range 19-86 (mean = 57.6, SD = 15.6). Adopting a mixed cross-sectional and longitudinal design, we investigated cross-sectional body magnetic resonance imaging measures of adipose tissue distribution in relation to longitudinal brain structure using MRI-based morphometry (T1) and diffusion tensor imaging (DTI). We estimated tissue-specific brain age at two time points and performed Bayesian multilevel modelling to investigate the associations between adipose measures at follow-up and brain age gap (BAG) - the difference between actual age and the prediction of the brains biological age - at baseline and follow-up. We also tested for interactions between BAG and both time and age on each adipose measure. The results showed credible associations between T1-based BAG and liver fat, muscle fat infiltration (MFI), and weight-to-muscle ratio (WMR), indicating older-appearing brains in people with higher measures of adipose tissue. Longitudinal evidence supported interaction effects between time and MFI and WMR on T1-based BAG, indicating accelerated ageing over the course of the study period in people with higher measures of adipose tissue. The results show that specific measures of fat distribution are associated with brain ageing and that different compartments of adipose tissue may be differentially linked with increased brain ageing, with potential to identify key processes involved in age-related transdiagnostic disease processes.
18.	Beck, Dani, et al. (author) Dissecting unique and common variance across body and brain health indicators using age prediction 2024 In: Human Brain Mapping. - : WILEY. - 1065-9471 .- 1097-0193. ; 45:6 Journal article (peer-reviewed)abstract Ageing is a heterogeneous multisystem process involving different rates of decline in physiological integrity across biological systems. The current study dissects the unique and common variance across body and brain health indicators and parses inter-individual heterogeneity in the multisystem ageing process. Using machine-learning regression models on the UK Biobank data set (N = 32,593, age range 44.6-82.3, mean age 64.1 years), we first estimated tissue-specific brain age for white and gray matter based on diffusion and T1-weighted magnetic resonance imaging (MRI) data, respectively. Next, bodily health traits, including cardiometabolic, anthropometric, and body composition measures of adipose and muscle tissue from bioimpedance and body MRI, were combined to predict 'body age'. The results showed that the body age model demonstrated comparable age prediction accuracy to models trained solely on brain MRI data. The correlation between body age and brain age predictions was 0.62 for the T1 and 0.64 for the diffusion-based model, indicating a degree of unique variance in brain and bodily ageing processes. Bayesian multilevel modelling carried out to quantify the associations between health traits and predicted age discrepancies showed that higher systolic blood pressure and higher muscle-fat infiltration were related to older-appearing body age compared to brain age. Conversely, higher hand-grip strength and muscle volume were related to a younger-appearing body age. Our findings corroborate the common notion of a close connection between somatic and brain health. However, they also suggest that health traits may differentially influence age predictions beyond what is captured by the brain imaging data, potentially contributing to heterogeneous ageing rates across biological systems and individuals. A 'body age' model trained on health traits demonstrated comparable age prediction accuracy to models trained solely on brain MRI data. Health traits may differentially influence age predictions beyond what is captured by the brain imaging data, revealing a degree of unique variance in brain and bodily ageing processes. image
19.	Beck, Marc, et al. (author) Improving stamps for 10 nm level wafer scale nanoimprint lithography 2002 In: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448 Journal article (peer-reviewed)abstract The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
20.	Beck, Marc, et al. (author) Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography 2004 In: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 837-842 Journal article (peer-reviewed)abstract Nanometer-structured transducers for commercial use in pharmaceutical, medical or (bio-) chemical analysis have so far been hardly accessible since they could not be produced by parallel lithography techniques at reasonable costs. We introduce here a method on. how to fabricate nanometer-structured interdigitated array electrodes including interconnections and bond pads in the micrometer range in a single imprint step on 2-in. wafer scale. The method enables the mass production of those devices at lowest cost opening a new field for the commercial use of nanometer-structured sensor systems.
21.	Carlberg, Patrick, et al. (author) Lift-off process for nanoimprint lithography 2003 In: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 203-207 Conference paper (peer-reviewed)abstract We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
22.	Carlberg, Patrick, et al. (author) Nanoimprint - a tool for realizing nano-bio research 2004 In: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200 Conference paper (peer-reviewed)abstract In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
23.	Carlberg, Patrick, et al. (author) Nanoimprint in mr-L 6000.1 XP/PMMA resist system 2002 In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Conference paper (peer-reviewed)abstract Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
24.	Cholewa, Marian, et al. (author) Investigating the Secondary Electron Emission of Nanomaterials Induced by a High-Resolution Proton Beam 2022 In: Physica Status Solidi (B). - : Wiley. - 0370-1972 .- 1521-3951. Journal article (peer-reviewed)abstract Herein, the secondary electron emission (SEE) from 1D nanomaterials in the form of nanorods is investigated. The small beam of a 1.5 MeV +H2 hydrogen with a sub 70 nm in diameter allows studying the SEE with a very high resolution. A wide range of nanomaterials from various laboratories are studied, including thin ZnO and ZnO/GaN nanostructures grown on 1 μm thick Si3N4 membranes and thick InP, GaN and GaN/AlN nanorod structures grown on bulk Si substrates. By virtue of the small size of the exciting nanobeams, high-resolution maps could be created presenting an SEE yield from various parts of the structures. This allows us to show that the top parts of nanorods in ZnO, ZnO/GaN, GaN, InP, and GaN/AlN nanostructures emit secondary electrons much more efficiently than the valley areas between nanorods. These results indicate that by a proper design and growth of 1D nanostructures, SEE properties could be improved over those of the traditionally used Au and CsI thin films. This work has been undertaken to find materials with the highest achievable SEE emission, which is a figure of merit for the detection efficiency relevant for the development and application of novel radiation detectors.
25.	Finder, C, et al. (author) Fluorescence microscopy for quality control in nanoimprint lithography 2003 In: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 623-628 Conference paper (peer-reviewed)abstract Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 mum lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-18000 is labelled with less than 0.1 wt.% fluorescent dye. Three different types of stamps are used to determine the dependence of the shape and size of stamp features in a series of imprints. The quality of a stamp is given by the sticking polymer residues per unit area. Fluorescence light images as well as visible light images are analysed. Changes in the area of the stamp covered with polymer as a function of the number of imprints is summarised in a statistical process chart. Adhesion was artificially induced in order to observe self cleaning of virgin stamps. They were detected and monitored, suggesting that this method is a suitable technique for quality control and that it could be easily adapted to the nanoimprint process. (C) 2003 Elsevier Science B.V. All rights reserved.
26.	Frimmer, Martin, et al. (author) Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP 2008 In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:13 Journal article (peer-reviewed)abstract Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.
27.	Gómez, Víctor J., et al. (author) Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography 2020 In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:29 Journal article (peer-reviewed)abstract In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.
28.	Graczyk, Mariusz, et al. (author) Fabrication of bottle-shaped nanochannels in fused silica using a self-closing effect 2012 In: Microelectronic Engineering. - : Elsevier BV. - 1873-5568 .- 0167-9317. ; 97, s. 173-176 Journal article (peer-reviewed)abstract The spatial control of molecular motor function, using nanostructured surfaces, is of great interest for the development of commercial devices for diagnostics and high-throughput drug screening with molecular motors as targets. In the present study we have fabricated 100-300 nm wide nanochannels, completely subsurfaced on fused silica chips, with the aim to interface them with a microfluidic system. Such a system will allow for changes in the chemical environment surrounding molecular motors, with minimal influence on their directional motion. This will be achieved by changing the chemical environment in a perpendicular direction to the motor motion and allowing the chemical substances to diffuse in and out of the nanochannels via a small slit (5-10 nm) on the top of the nanochannels. To create this slit, and to control its width, we here demonstrate the use of a self-closing effect based on the volume increase (2.27 times) during oxidation of silicon. The details of the fabrication steps (EBL, RIE and oxidation) are discussed. (C) 2012 Elsevier B.V. All rights reserved.
29.	Graczyk, Mariusz, et al. (author) Nanoimprint stamps with ultra-high resolution : Optimal fabrication techniques 2018 In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 190, s. 73-78 Journal article (peer-reviewed)abstract Single-digit nanometer patterning by nanoimprint lithography is a challenging task, which requires optimum stamp fabrication technique. In the current work, we present different strategies for technology of hard master stamps to make intermediate working stamps with sub-10 nm features. Methods of both negative and positive master stamps fabrication, based on EBL, RIE and ALD are described and compared. A single-step copying of negative master stamps using a polymer material is a preferred strategy to reach the ultra high-resolution. Lines as small as 5.6 nm are demonstrated in a resist using a combined thermal and UV-imprint with OrmoStamp material as a working stamp.
30.	Graczyk, Mariusz, et al. (author) Optimization of a self-closing effect to produce nanochannels with top slits in fused silica 2012 In: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 30:6 Journal article (peer-reviewed)abstract The authors report on the fabrication of subsurfaced 100-600 nm wide nanochannels in fused silica with top slit openings in the size range of 5-10 nm. Such nanochannels can be used in combination with a nanofluidics system to guide molecular motors and quickly switch the chemical environment inside the nanochannels through diffusion via the top slits. To realize nanochannel top slits in this size range, the authors here demonstrate the use of a self-closing effect based on the volume expansion of a thin Si layer during oxidation. A high contrast electron beam lithography exposure step in conjunction with dry etching of SiO2 by reactive ion etching (RIE) and Si by inductively coupled plasma-RIE followed by wet etching of a fused silica substrate is used to create the initial slit before oxidation. The details of nanochannel fabrication steps are described and discussed. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4766317]
31.	Gustafsson, Anders, et al. (author) Reevaluation of blueshifts introduced by lateral confinement in quantum-well wire structures 1993 In: Applied Physics Letters. - 0003-6951. ; 12:15, s. 1709-1711 Journal article (peer-reviewed)abstract The luminescence from etched quantum-well wire structures often exhibits an unexpectedly large blueshift of the peak energy position. Further, the shift is usually quite independent of the width of the wires. In this letter we show that this blueshift can be explained as a decreased transfer of excitons between areas of different monolayer thicknesses within the single quantum wells, caused by a change in the exciton diffusion from being two-dimensional in the quantum wells to one-dimensional in the wires. This reduced transfer will result in a blueshift of the peak energy position if the monolayer splitting is unresolved.
32.	Harb, Maher, et al. (author) The c-axis thermal conductivity of graphite film of nanometer thickness measured by time resolved X-ray diffraction 2012 In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:23 Journal article (peer-reviewed)abstract We report on the use of time resolved X-ray diffraction to measure the dynamics of strain in laser-excited graphite film of nanometer thickness, obtained by chemical vapour deposition (CVD). Heat transport in the CVD film is simulated with a 1-dimensional heat diffusion model. We find the experimental data to be consistent with a c-axis thermal conductivity of similar to 0.7 Wm(-1) K-1. This value is four orders of magnitude lower than the thermal conductivity in-plane, confirming recent theoretical calculations of the thermal conductivity of multilayer graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769214]
33.	Jafari Jam, Reza, et al. (author) III-V nanowire synthesis by use of electrodeposited gold particles 2015 In: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:1, s. 134-138 Journal article (peer-reviewed)abstract Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.
34.	Jafari Jam, Reza, et al. (author) Nanoimprint Lithography and Gold Electroplating for Nanowire Seed Particle Definition 2013 Conference paper (peer-reviewed)
35.	Joensson, C T, et al. (author) Synthesis and characterization of cobalt silicide films on silicon 2006 In: Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms). - : Elsevier BV. - 0168-583X. ; 249, s. 532-535 Conference paper (peer-reviewed)abstract Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved.
36.	Khan, Sabbir Ahmed, et al. (author) High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching 2018 In: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; , s. 2476-2482 Journal article (peer-reviewed)abstract ABSTRACT: Nanoimprint lithography (NIL) has the potential for low-cost andhigh-throughput nanoscale fabrication. However, the NIL quality and resolution areusually limited by the shape and size of the nanoimprint stamp features. Atomiclayer etching (ALE) can provide a damage-free pattern transfer with ultimate etchcontrol for features of all length scales, down to the atomic scale, and for all featuregeometries, which is required for good quality and high-resolution nanoimprintstamp fabrication. Here, we present an ALE process for nanoscale pattern transferand high-resolution nanoimprint stamp preparation. This ALE process is based onchemical adsorption of a monoatomic layer of dichloride (Cl2) on the siliconsurface, followed by the removal of a monolayer of Cl2-modified silicon by argonbombardment. The nanopatterns of different geometries, loadings, and pitcheswere fabricated by electron beam lithography on a silicon wafer, and ALE wassubsequently performed for pattern transfer using a resist as an etch mask. Thepost-ALE patterns allowed us to study the different effects and limitations of theprocess, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.
37.	Koksharov, Yu.A., et al. (author) Magnetostatic interactions in planar ring-like nanoparticle structures 2006 In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 515, s. 731-734 Journal article (peer-reviewed)abstract Numerical calculations of equilibrium state energies and local magnetic fields in planar ring-like nanoparticle structures were performed. The dipole–dipole, Zeeman and magnetic anisotropy interactions were included into the model. The result of their competition depends on the value of the external magnetic field, magnetic parameters of an individual nanoparticle, size and shape of the structures. Flux-closed vortexes, single domain, two- domain ‘‘onion’’-like, ‘‘hedgehog’’-like and more complex spin structures can be realized. The critical field, providing a sharp transition from the flux-closed vortex to the ‘‘onion’’-like state, can be regulated by a variation of the particle magnetization and anisotropy constant, their easy directions, and particle space arrangement.
38.	Lindberg, Frida W., et al. (author) Design and development of nanoimprint-enabled structures for molecular motor devices 2019 In: Materials Research Express. - : IOP Publishing. - 2053-1591. ; 6:2 Journal article (peer-reviewed)abstract Devices based on molecular motor-driven cytoskeletal filaments, e.g., actin filaments, have been developed both for biosensing and biocomputational applications. Commonly, these devices require nanoscaled tracks for guidance of the actin filaments which has limited the patterning technique to electron beam lithography. Thus, large scale systems become intractable to fabricate at a high throughput within a reasonable time-frame. We have studied the possibility to fabricate molecular motor-based devices using the high throughput, high resolution technique of nanoimprint lithography. Molecular motor-based devices require wide open regions (loading zones) to allow filaments to land for later propulsion into the nanoscale tracks. Such open zones are challenging to fabricate using nanoimprint lithography due to the large amount of material displaced in the process. We found that this challenge can be overcome by introducing nanoscaled pillars inside the loading zones, into which material can be displaced during imprint. By optimising the resist thickness, we were able to decrease the amount of material displaced without suffering from insufficient filling of the stamp. Furthermore, simulations suggest that the shape and positioning of the pillars can be used to tailor the overall cytoskeletal filament transportation direction and behaviour. This is a potentially promising design feature for future applications that however, requires further optimisations before experimental realisation.
39.	Lu, Fangchao, et al. (author) Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact 2013 In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:10, s. 4654-4658 Journal article (peer-reviewed)abstract Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g).were obtained. The in-plane g is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.
40.	Luo, Gang, et al. (author) An electrically tunable interdigitated cantilever array fabricated by nanoimprint lithography 2006 In: Book of abstracts: Intl Conf on Nanoimprint and Nanoprint Technology, San Fransisco, Ca, USA (2006). Conference paper (peer-reviewed)
41.	Luo, Gang, et al. (author) Nanoimprint and reactive etching for fabrication of Si/SiO2 NEMS structures 2006 In: Book of extended abstracts: 14th Intl Symp “Nanostructures: Physics and Technology”, St Petersburg, Russia (2006). Conference paper (peer-reviewed)
42.	Luo, Gang, et al. (author) Nanoimprint-based fabrication and characterization of interdigitated cantilevver array 2006 In: Book of abstracts: Intl Conf on Nanosci and Technol, Basel, Switzerland (2006). Conference paper (peer-reviewed)
43.	Luo, Gang, et al. (author) Nanoimprint lithography for the fabrication of interdigitated cantilever arrays 2006 In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:8, s. 1906-1910 Journal article (peer-reviewed)abstract We report on the realization of a novel interdigitated cantilever array with electrostatic control of the shape of the interdigitated array. It consists of an array of SiO2/metal double-finger cantilevers in a grating configuration together with an electrical connection part. The complete grating structure is fabricated with nanoimprint lithography, UV lithography and reactive ion etching. The patterns of the cantilever arrays are defined by nanoimprint lithography. The electrical contact pads are defined and aligned with the imprinted grating pattern by UV lithography. The two steps of reactive ion etching are optimized to get vertical sidewalls of the SiO2 cantilevers and finally to release them from the Si substrate. By applying a bias, the shape of the cantilever array can be altered due to the electrostatic force. The dimensions of the cantilevers and the spacing between them are optimized to achieve the desired functional operating characteristics of the structures. Since the fabrication scheme is based on nanoimprint lithography, such electrostatically controlled periodic structures may be relatively easily and non-expensively realized in various configurations, allowing them to function as optical switching elements, electrical filters, mass sensors, etc.
44.	Luo, Gang, et al. (author) Nanoimprint technology for fabrication of tunable grating structures 2005 In: Book of extended abstracts: 31st Intl Conf Micro- and Nano-Engineering, Vienna, Austria (2005). Conference paper (peer-reviewed)
45.	Löfstrand, Anette, et al. (author) Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition 2022 In: Advanced Electronic Materials. - : Wiley. - 2199-160X. ; 8:9 Journal article (peer-reviewed)abstract Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost‐effective processing techniques to fabricate small‐pitch vertical III–V nanowires over large areas will be an important step toward realizing dense gate all‐around transistors, having high electron mobility, and low power consumption. It is demonstrated here, how arrays of III–V nanowires with a controllable number of rows, ranging from one single row up to bands of 500 nm, can be processed by directed self‐assembly (DSA) of block copolymer (BCP). Furthermore, it is shown that the DSA‐orientation with respect to the substrate's crystal direction affects the nanowire facet configuration, and thereby the nanowire spacing and gate all‐around deposition possibilities. A high χ poly(styrene)‐block‐poly(4‐vinylpyridine) BCP pattern directed by electron beam lithography‐defined guiding lines is transferred into silicon nitride. The silicon nitride is then used as a selective area metal‐organic vapor phase epitaxy mask atop an indium arsenide (InAs) buffer layer on a silicon platform to grow vertical InAs nanowires at 44–60 nm row pitch. Finally, deposition of high‐κ oxide and titanium nitride at this high pattern density is demonstrated, to further illustrate the considerations needed for next generation transistors. Directed self‐assembly of block copolymers is a cost‐effective technique suitable for high patterning densities. Here it is used to enable vertical III–V nanowire growth at ≈54 nm row pitch on a silicon platform in two different nanowire configurations. Furthermore, a path for gate all‐around deposition is explored, which could be of use for small footprint vertical transistor fabrication.
46.	Löfstrand, Anette, et al. (author) Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth 2020 In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:32 Journal article (peer-reviewed)abstract Here we present a method to control the size of the openings in hexagonally organized BCP thin films of poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) by using surface reconstruction. The surface reconstruction is based on selective swelling of the P4VP block in ethanol, and its extraction to the surface of the film, resulting in pores upon drying. We found that the BCP pore diameter increases with ethanol immersion temperature. In our case, the temperature range 18 to 60 °C allowed fine-Tuning of the pore size between 14 and 22 nm. A conclusion is that even though the molecular weight of the respective polymer blocks is fixed, the PS-b-P4VP pore diameter can be tuned by controlling temperature during surface reconstruction. These results can be used for BCP-based nanofabrication in general, and for vertical nanowire growth in particular, where high pattern density and diameter control are of importance. Finally, we demonstrate successful growth of indium arsenide InAs vertical nanowires by selective-Area metal-organic vapor phase epitaxy (MOVPE), using a silicon nitride mask patterned by the proposed PS-b-P4VP surface reconstruction lithography method.
47.	Löfstrand, Anette, et al. (author) Poly(styrene)- block-Maltoheptaose Films for Sub-10 nm Pattern Transfer : Implications for Transistor Fabrication 2021 In: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; 4:5, s. 5141-5151 Journal article (peer-reviewed)abstract Sequential infiltration synthesis (SIS) into poly(styrene)-block-maltoheptaose (PS-b-MH) block copolymer using vapors of trimethyl aluminum and water was used to prepare nanostructured surface layers. Prior to the infiltration, the PS-b-MH had been self-assembled into 12 nm pattern periodicity. Scanning electron microscopy indicated that horizontal alumina-like cylinders of 4.9 nm diameter were formed after eight infiltration cycles, while vertical cylinders were 1.3 nm larger. Using homopolymer hydroxyl-terminated poly(styrene) (PS-OH) and MH films, specular neutron reflectometry revealed a preferential reaction of precursors in the MH compared to PS-OH. The infiltration depth into the maltoheptaose homopolymer film was found to be 2.0 nm after the first couple of cycles. It reached 2.5 nm after eight infiltration cycles, and the alumina incorporation within this infiltrated layer corresponded to 23 vol % Al2O3. The alumina-like material, resulting from PS-b-MH infiltration, was used as an etch mask to transfer the sub-10 nm pattern into the underlying silicon substrate, to an aspect ratio of approximately 2:1. These results demonstrate the potential of exploiting SIS into carbohydrate-based polymers for nanofabrication and high pattern density applications, such as transistor devices.
48.	Löfstrand, Anette, et al. (author) Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer 2021 In: Advances in Patterning Materials and Processes XXXVIII. - : SPIE. - 1996-756X .- 0277-786X. - 9781510640573 - 9781510640580 ; 11612 Conference paper (peer-reviewed)abstract This study presents how sequential infiltration synthesis of trimethyl aluminium and water into a carbohydrate-based block copolymer was used to enable pattern transfer of 6 nm half-pitch horizontal cylinders into silicon. Specular neutron reflectometry measurements of poly(styrene)-block-maltoheptaose self-assembled into horizontal cylinders indicate an increasing content of alumina after each sequential infiltration cycle, comparing 0, 1, 2, and 4 cycles, with alumina content reaching 2.4 vol% after four infiltrations cycles. Dry etching processes in inductively coupled plasma reactive ion etching for sub-10 nm patterns were developed, using a two-step technique: O2-plasma for polymer removal and a reactive ion etching of Si using a mixture of SF6 and C4F8 gases. Etch selectivity of more than 2:1 of silicon over alumina-like etch mask material was achieved. To evaluate the etching process, the etched Si structures were measured and characterized by scanning electron microscopy. These results are expected to be of use for nanofabrication and applications in the sub-10 nm regime.
49.	Löfstrand, Anette, et al. (author) Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer 2022 In: Polymers. - : MDPI AG. - 2073-4360. ; 14:4, s. 1-12 Journal article (peer-reviewed)abstract Vapor phase infiltration into a self-assembled block copolymer (BCP) to create a hybrid material in one of the constituent blocks can enhance the etch selectivity for pattern transfer. Mul- tiple pulse infiltration into carbohydrate-based high-χ BCP has previously been shown to enable sub-10 nm feature pattern transfer. By optimizing the amount of infiltrated material, the etch selectiv- ity should be further improved. Here, an investigation of semi-static sequential infiltration synthesis of trimethyl aluminum (TMA) and water into maltoheptaose (MH) films, and into hydroxyl-terminated poly(styrene) (PS-OH) films, was performed, by varying the process parameters temperature, precur- sor pulse duration, and precursor exposure length. It was found that, by decreasing the exposure time from 100 to 20 s, the volumetric percentage on included pure Al2O3 in MH could be increased from 2 to 40 vol% at the expense of a decreased infiltration depth. Furthermore, the degree of infiltration was minimally affected by temperature between 64 and 100 ◦C. Shorter precursor pulse durations of 10 ms TMA and 5 ms water, as well as longer precursor pulses of 75 ms TMA and 45 ms water, were both shown to promote a higher degree, 40 vol%, of infiltrated alumina in MH. As proof of concept, 12 nm pitch pattern transfer into silicon was demonstrated using the method and can be concluded to be one of few studies showing pattern transfer at such small pitch. These results are expected to be of use for further understanding of the mechanisms involved in sequential infiltration synthesis of TMA/water into MH, and for further optimization of carbohydrate-based etch masks for sub-10 nm pattern transfer. Enabling techniques for high aspect ratio pattern transfer at the single nanometer scale could be of high interest, e.g., in the high-end transistor industry.
50.	Malekian, Bita, 1986, et al. (author) A Method for Investigation of Size-Dependent Protein Binding to Nanoholes Using Intrinsic Fluorescence of Proteins 2017 In: ACS Omega. - : American Chemical Society (ACS). - 2470-1343. ; 2:8, s. 4772-4778 Journal article (peer-reviewed)abstract We have developed a novel method to study the influence of surface nanotopography on human fibrinogen adsorption at a given surface chemistry. Well-ordered arrays of nanoholes with different diameters down to 45 nm and a depth of 50 nm were fabricated in silicon by electron beam lithography and reactive ion etching. The nanostructured chip was used as a model system to understand the effect of size of the nanoholes on fibrinogen adsorption. Fluorescence imaging, using the intrinsic fluorescence of proteins, was used to characterize the effect of the nanoholes on fibrinogen adsorption. Atomic force microscopy was used as a complementary technique for further characterization of the interaction. The results demonstrate that as the size of the nanoholes is reduced to 45 nm, fibrinogen adsorption is significantly increased.

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