| 1. |
- Nafday, Dhani, et al.
(författare)
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Electronic structure of Bi nanolines on InAs(100)
- 2023
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 611
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled nanolines are attractive to build the technological devices of next generation, but characterizing their electronic properties is often difficult to achieve. In this work we employ angle-resolved photoemission spectroscopy and density functional theory to clarify the electronic structure exhibited by self-assembled Bi nanolines grown on the InAs(100) surface. A surface resonance associated to the reconstructed ζ(4 × 2) surface is visible in the photoemission spectra before and after the formation of the Bi nanolines. This demonstrates that Bi deposition does not necessarily drive a transition to an unreconstructed surface in the substrate, which is contrary to what was reported in previous studies. In addition, experiment and theory show the presence of a flat band located in the band gap of InAs, just above the valence band maximum. This flat band is associated to the Bi nanolines and possesses a strong orbital character, consistent with its unidimensional nature. These spectral features suggest that Bi nanolines on InAs(100) may have a strongly polarized conductivity, which makes them suitable to be exploited as nanowires in nanotechnology. The coexistence with an accumulation layer suggests an even farther functionalization.
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| 2. |
- Nemsak, Slavomir, et al.
(författare)
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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
- 2018
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element-and momentum-resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
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