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- Momozawa, Y, et al.
(författare)
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IBD risk loci are enriched in multigenic regulatory modules encompassing putative causative genes
- 2018
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Ingår i: Nature communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 9:1, s. 2427-
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Tidskriftsartikel (refereegranskat)abstract
- GWAS have identified >200 risk loci for Inflammatory Bowel Disease (IBD). The majority of disease associations are known to be driven by regulatory variants. To identify the putative causative genes that are perturbed by these variants, we generate a large transcriptome data set (nine disease-relevant cell types) and identify 23,650 cis-eQTL. We show that these are determined by ∼9720 regulatory modules, of which ∼3000 operate in multiple tissues and ∼970 on multiple genes. We identify regulatory modules that drive the disease association for 63 of the 200 risk loci, and show that these are enriched in multigenic modules. Based on these analyses, we resequence 45 of the corresponding 100 candidate genes in 6600 Crohn disease (CD) cases and 5500 controls, and show with burden tests that they include likely causative genes. Our analyses indicate that ≥10-fold larger sample sizes will be required to demonstrate the causality of individual genes using this approach.
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| 6. |
- Mitrovic, I. Z., et al.
(författare)
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Atomic-layer deposited thulium oxide as a passivation layer on germanium
- 2015
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 117:21
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Tidskriftsartikel (refereegranskat)abstract
- A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05±0.2eV for Tm2O3/p-Ge from the Tm 4d centroid and Ge 3p3/2 charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77eV with an apparent Urbach tail signifying band gap tailing at ∼5.3eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm2O3 films. The Tm2O3/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO2/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3eV) and electrons (∼2eV) identify Tm2O3 as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge.
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| 7. |
- Mitrovic, I. Z., et al.
(författare)
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Interface engineering of Ge using thulium oxide : Band line-up study
- 2013
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Ingår i: Microelectronic Engineering. - : Elsevier. - 0167-9317 .- 1873-5568. ; 109, s. 204-207
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Tidskriftsartikel (refereegranskat)abstract
- This paper investigates the band line-up and optical properties (dielectric function) of Tm2O3/Ge gate stacks deposited by atomic layer deposition. X-ray photoelectron spectroscopy has been performed to ascertain the shallow core levels (Ge3d and Tm4d) in ultra-thin and bulk Tm2O3/Ge stacks as well as valence band maxima in Ge and bulk Tm2O3. The valence band offset of Tm2O3/Ge has been found to be 2.95 +/- 0.08 eV. Vacuum ultra violet variable angle spectroscopic ellipsometry studies reveal the indirect band gap nature of Tm2O3, with the value extracted from the Tauc method of 5.3 +/- 0.1 eV. A distinct absorption feature is observed at similar to 3.2 eV below the band gap of Tm2O3, and clearly distinguished from the Si and Ge critical points. A dielectric constant of 14 to 15 has been derived from the electrical measurements on 5 nm Tm2O3/epi Ge/Si gate stacks. The band line-up study of Tm2O3/Ge implies an acceptable barrier for holes (2.95 eV) and electrons (greater than 1.7 eV) for Ge MOSFET engineering.
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| 8. |
- Mitrovic, I. Z., et al.
(författare)
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Interface engineering routes for a future cmos ge-based technology
- 2014
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; , s. 73-88
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Konferensbidrag (refereegranskat)abstract
- We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.
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| 9. |
- Mitrovic, I. Z., et al.
(författare)
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On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks
- 2012
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 112:4, s. 044102-
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A similar to 9 angstrom thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10(-3) A/cm(2) at 1.5 V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.
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