| 1. |
- Colakerol, L, et al.
(författare)
-
Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN
- 2006
-
Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048. ; 152:1-2, s. 25-28
-
Tidskriftsartikel (refereegranskat)abstract
- Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.
|
|
| 2. |
- Downes, JE, et al.
(författare)
-
Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study
- 2003
-
Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 94:9, s. 5820-5825
-
Tidskriftsartikel (refereegranskat)abstract
- The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during annealing. (C) 2003 American Institute of Physics.
|
|
| 3. |
- Duda, LC, et al.
(författare)
-
Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys
- 1998
-
Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 58:4, s. 1928-1933
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The electronic structure of the wurtzite AlxGa1-xN alloy system has been studied for numerous values of Al concentration x ranging from 0 (pure GaN) to 1 (pun AlN). The occupied and unoccupied partial density of states was measured for each alloy using sy
|
|
| 4. |
- Plucinski, L, et al.
(författare)
-
Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN
- 2005
-
Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 136:4, s. 191-195
-
Tidskriftsartikel (refereegranskat)abstract
- Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d(8) state. The correlation energies and binding energies for the satellite multiplet have been measured for the satellite and related Auger transitions. The satellite multiplet contains additional constant binding energy features not observed in previous studies of other Ga compounds. The present results are compared with those for Gal? and GaAs.
|
|
| 5. |
- Smith, KE, et al.
(författare)
-
Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N
- 1998
-
Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. - 1071-1023. ; 16:4, s. 2250-2253
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree
|
|
| 6. |
- Stagarescu, CB, et al.
(författare)
-
Electronic structure of GaN measured using soft-x-ray emission and absorption
- 1996
-
Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:24, s. 17335-17338
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The electronic structure of thin-film wurtzite GaN has been studied using a combination of soft-x-ray absorption and emission spectroscopies. We have measured the elementally and orbitally resolved GaN valence and conduction bands by recording Ga L and N
|
|
