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- Jmerik, V. N., et al.
(author)
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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on mu-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
- 2018
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In: Semiconductors (Woodbury, N.Y.). - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 1063-7826 .- 1090-6479. ; 52:5, s. 667-670
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Journal article (peer-reviewed)abstract
- We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (mu-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the mu-CPSSs and followed by growth of 1-mu m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000 (1) over bar) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
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| 2. |
- Nechaev, D. V., et al.
(author)
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Site-controlled GaN nanocolumns with InGaN insertions grown by MBE
- 2017
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In: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017). - : IOP PUBLISHING LTD.
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Conference paper (peer-reviewed)abstract
- The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (mu-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Micro-cathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.
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| 3. |
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| 4. |
- Shubina, T. V., et al.
(author)
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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy
- 2016
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In: Physica status solidi. B, Basic research. - : WILEY-V C H VERLAG GMBH. - 0370-1972 .- 1521-3951. ; 253:5, s. 845-852
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Journal article (peer-reviewed)abstract
- This paper analyzes current trends in fabrication of III-nitride microresonators exploiting whispering gallery modes. Novel cup-cavities are proposed and their fabrication from GaN and InN by molecular beam epitaxy on patterned substrates is described. These cup-cavities can concentrate the mode energy in a subwavelength volume. Their mode energies are stable up to room temperature, being identical in large microcrystals. In these cavities, mode switching can be realized by means of refractive index variation. Cup-cavity modes, being inferior to plasmonic resonances in the respect of integral emission enhancement, have advantages for spectrally selective amplification of quantum transitions in site-controlled nano-emitters. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim
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