| 1. |
- Barankova, Hana, et al.
(författare)
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Hysteresis effects in the sputtering process using two reactive gases
- 1995
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Ingår i: Thin Solid Films. - 0040-6090. ; 260:2, s. 181-186
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Tidskriftsartikel (refereegranskat)abstract
- The reactive sputtering process involving two reactive gases has been investigated. Sputtering titanium in the presence of oxygen and nitrogen in argon was studied by means of optical emission and mass spectrometries. The experiments reveal the mechanism
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| 2. |
- Barankova, Hana, et al.
(författare)
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Linear arc discharge (LAD): A new type of hollow cathode plasma source
- 1996
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Ingår i: SURFACE & COATINGS TECHNOLOGY. - 0257-8972. ; 87-8:1-3, s. 377-380
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Tidskriftsartikel (refereegranskat)abstract
- A novel linearly scalable source for low pressure plasma processing is described. The source is based on a parallel plate hot hollow cathode in a focusing magnetic field which allows generation of a linearly uniform plasma in a gas admitted into the slit
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| 4. |
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| 5. |
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| 6. |
- Gustavsson, Lars-Erik, 1969-
(författare)
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Hollow Cathode Deposition of Thin Films
- 2006
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Thin films of metals and compounds have a very wide range of applications today. Many of the deposition methods used for the production of such films utilize plasma to support the growth the film, e.g. by the supply of energy and the enhancement of reactivity. This thesis focuses on the physical vapor deposition (PVD) of thin films by high density plasma sources based on hollow cathodes and aims to increase the understanding of the deposition process and its influence on the film properties.Titanium nitride films reactively deposited by the low-pressure hybrid plasma (HYP LP) source exhibited excellent properties and was deposited at considerable higher rates than films deposited by conventional methods.An original finding in this work is the influence of substrate material on the deposition process and consequently on the properties of the deposited film. In the deposition of TiN films by the HYP LP source it was found that the substrate temperature was higher for Si substrates than for steel substrates due to a more efficient absorption of microwave power in Si than in steel. Further, it was found that ferromagnetic substrates influence the film growth in magnetized plasma systems. An effect of the ferromagnetic substrates is the enhancement of ion bombardment that increases the growth temperature and affects the texture and morphology of the growing films. It was also found that a DC bias can change the TiN film properties considerably and compensate the effect of ferromagnetic substrates.High rate depositions of chromium and chromium nitride films by the RF hollow cathode plasma jet (RHCPJ) source were studied. The performance of the reactive diffuse arc process and the CrN film properties indicates that the process can be transferred from small cylindrical cathodes to linear magnetized hollow cathodes which allow deposition on considerable larger areas and this is important for industrial applications.
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| 8. |
- Nyberg, Tomas, et al.
(författare)
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Composition control by current modulation in dc-reactive sputtering
- 1998
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Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. - 0734-2101. ; A16:3, s. 1868-1872
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Tidskriftsartikel (refereegranskat)abstract
- Control of the reactive sputtering process can be carried out by controlling either the flow of the reactive gas or the power supplied to the target. In the flow control mode it is well known that the reactive sputter deposition process exhibits a pronoun
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| 9. |
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| 10. |
- Nyberg, Tomas, et al.
(författare)
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Studies of reactive sputtering of multi-phase chromium nitride
- 1997
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Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. - 0734-2101. ; 15:2, s. 248-252
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Tidskriftsartikel (refereegranskat)abstract
- We have presented a model for reactive sputter deposition of two-phase materials. This model has been applied to reactive sputtering of chromium nitride where it is assumed that either Cr2N or CrN is formed. In order to test the validity of the model, a n
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| 11. |
- Nyberg, Tomas, et al.
(författare)
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The influence of the deposition angle on the composition of reactively sputtered thin films
- 1997
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Ingår i: SURFACE & COATINGS TECHNOLOGY. - 0257-8972. ; 94-5:1-3, s. 242-246
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We have performed computer simulations and experimental studies of the compositional behaviour of reactively sputter-deposited films as a function of the deposition angle. The composition of deposited films is essentially determined by the supply rate of
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| 12. |
- Rosén, Daniel, 1974-
(författare)
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Studies of the Reactive Sputtering Process and its Application in Electro-Acoustic Devices
- 2006
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Electro-acoustic devices such as surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices have been in commercial use for over 60 years and can be found in applications ranging from specialised scientific and military equipment to consumer products, such as mobile telephones, TV and radio receivers, etc. Today by far the largest market for electro-acoustic devices is the telecommunication industry which annually consumes approximately three billion acoustic wave filters for frequency control alone.The development of new materials and technologies for electro-acoustic devices has gained a substantial and growing interest from both academic and industrial research communities in recent years due to the enormous growth in the telecommunication industry and other forms of wireless data communication. One of the bigger issues has been to replace the single crystalline substrates with thin film piezoelectric materials deposited by reactive sputtering. This would not only reduce the manufacturing costs but will also enable high frequency of operation and a wider choice of substrate materials. However, in order to obtain the material properties required for the intended application a detailed theoretical description of the reactive sputtering process is necessary since the texture and other functional properties of the piezoelectric material are extremely sensitive to the process parameters in addition to the structure of the underlying material.This thesis studies the reactive sputtering process and its application for the fabrication of thin film electro-acoustic devices. The aim has been to gain a further insight into the process and make use of this knowledge to improve the fabrication of electro-acoustic devices. In this work modelling of the reactive sputtering process has been improved by studying certain fundamental aspects of the process and in particular the dynamics of the processes taking place during sputtering both at the target and the substrate surfaces. Consequently, highly textured thin piezoelectric aluminium nitride films have been synthesized and thin film bulk acoustic resonators (FBAR) operating in the GHz range have been fabricated and studied.
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| 13. |
- Siliņš, Kaspars, 1987-
(författare)
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Plasma Enhanced Chemical- and Physical- Vapor Depositions Using Hollow Cathodes
- 2018
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Development of coating deposition technologies, in terms of performance and costs, is an ongoing process. A promising class of deposition technologies are based on hollow cathode discharges.This thesis investigates performance of selected hollow cathode plasma sources developed at the Plasma group, at Uppsala University for coating deposition at moderate pressures. Amorphous carbon film deposition was investigated by Radio frequency (RF) Hollow Cathode Plasma Jet (RHCPJ) and Magnets-in-Motion (M-M) linear hollow cathode plasma sources. Titanium nitride (TiN) films were deposited by a magnetized Hollow Cathode Enhanced magnetron Target (HoCET). Aluminium nitride (AlN) deposition by RHCPJ was compared with High Power Impulse Magnetron Sputtering (HiPIMS).Amorphous carbon films were prepared on glass substrates without an interlayer. The AlN and TiN films were deposited on Si substrates. Optical emission spectroscopy was used to analyze plasma composition. The coating structure was analyzed by X-ray diffraction and Raman spectroscopy. The thickness of films was measured by scanning electron microscopy and profilometry. The TiN hardness was analyzed by microhardness test method and confirmed by nanoindentation analysis.Adherent amorphous carbon coating deposition process was transferred from RHCPJ to the M-M linear hollow cathode. Utilizing the latter plasma source, it was found that thick and adherent amorphous carbon coatings can be deposited in a range of 0.25% to 0.5% of C2H2 in Ar at constant a deposition pressure of 0.3 Torr and 1200 W of RF power. Deposition rates of 0.2 μm/min and 0.375 μm/min respectively were reached. Self-delaminating, thick (50 μm) amorphous carbon films can be deposited at a deposition rate of 2.5 μm/min at 2% C2H2. A non-linear relation was observed between the deposition rate and the C2H2 content.Utilizing the HoCET arrangement, high deposition rates of stoichiometric, polycrystalline TiN films are obtained. A maximum of 0.125 μm/min is obtained at 2.4% N2 in Ar, 1200 W RF power, 14 mTorr deposition pressure. TiN films deposited at 4 - 20% nitrogen contents displayed hardness values above 28 GPa reaching a maximum of 31.4 GPa at 5% N2.For a (002) oriented AlN film deposition the RHCPJ offers deposition rates of up to 150 nm/min. Using the HiPIMS at comparable deposition conditions the AlN films were achieved at a rate of 24 nm/min.
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