| 1. |
- Cascini, Silvia, et al.
(författare)
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Case Identification and Characterization of Migrants with Dementia in the Lazio Region Using Health Administrative Data
- 2023
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Ingår i: Journal of Alzheimer's Disease. - 1387-2877 .- 1875-8908. ; 92:3, s. 843-852
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Tidskriftsartikel (refereegranskat)abstract
- Background: A crucial step for planning effective public health policies for migrants with dementia is the collection of data on the local dimensions of the phenomenon and patients’ characteristics.Objective: This study aimed to identify and characterize migrants with dementia in the Lazio region using health administrative databases.Methods: Residents with dementia aged 50 years or older, living in the Lazio region as of December 31, 2018, were identified using a validated algorithm based on hospital discharge(s), claims for antidementia drugs, and co-payment exemption for dementia. Migrants were defined as people born abroad and grouped in migrants from High Migratory Pressure Countries (HMPCs) and Highly Developed Countries (HDCs). Overall and age-specific prevalence rates were estimated in native- and foreign-born patients.Results: Dementia was ascertained in 38,460 residents. Among them, 37,280 (96.9%) were born in Italy, 337 (0.9%) were migrants from HDCs, and 843 (2.2%) from HMPCs. Dementia prevalence was higher among natives (1.15%, 95% CI 1.14–1.16) relative to migrants from HDCs (0.60%, 95% CI 0.54–0.67) and HMPCs (0.29%, 95% CI 0.27–0.31). The prevalence of comorbidities did not differ between groups. Migrants with dementia had a lower likelihood of receiving antidementia treatments compared with natives (51.6% in migrants from HDCs, 49.3% in migrants from HMPCs, and 53.5% among Italians).Conclusion: Routinely collected data in healthcare administrative databases can support the identification of migrants with dementia. Migrants exhibited a lower age-standardized prevalence of registered dementia and lower access to dedicated treatments than Italians. These findings are suggestive of underdiagnosis and undertreatment of dementia in migrants.
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| 2. |
- Jin, Lei, et al.
(författare)
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Engineering Interfacial Structure in “Giant” PbS/CdS Quantum Dots for Photoelectrochemical Solar Energy Conversion
- 2016
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Ingår i: Nano Energy. - : Elsevier BV. - 2211-2855. ; 30, s. 531-541
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Tidskriftsartikel (refereegranskat)abstract
- The interfacial structure in “giant” PbS/CdS quantum dots (QDs) was engineered by modulating the Cd:S molar ratio during in situ growth. The control of the gradient interfacial layer could facilitate hole transfer, regulate the transition from double- to single-color emission, as a consequence. These QDs are optically active close-to-the near-infrared (NIR) spectral region and are candidates as absorber materials in solar energy conversion. Photoinduced charge transfer from “giant” QDs to electron scavenger can still take place despite the ultra-thick (~5 nm) shell. The hybrid architecture based on a TiO2 mesoporous framework sensitized by the “giant” QDs with alloyed interface can produce a saturated photocurrent density as high as ~5.3 mA/cm2 in a photoelectrochemical (PEC) cell under 1 Sun illumination, which is around 2 times higher than that of bare PbS and core/thin-shell PbS/CdS QDs sensitizer. The as-prepared PEC device presented very good stability thanks to the “giant” core/shell QDs architecture with tailored interfacial layer and a further coating of the ZnS shell. 78% of the initial current density is kept after 2-hour irradiation at 1 Sun. Engineering of electronic band structure plays a key role in boosting the functional properties of these composite systems, which hold great potential for H2 production in PEC devices.
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| 3. |
- Kakanakova-Gueorguieva, Anelia, et al.
(författare)
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Material proposal for 2D indium oxide
- 2021
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 548
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Tidskriftsartikel (refereegranskat)abstract
- Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in "atop" positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.
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| 4. |
- Kakanakova-Gueorguieva, Anelia, et al.
(författare)
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Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
- 2020
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Ingår i: Nanoscale. - : ROYAL SOC CHEMISTRY. - 2040-3364 .- 2040-3372. ; 12:37, s. 19470-19476
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Tidskriftsartikel (refereegranskat)abstract
- The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 degrees C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensiveab initiomolecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH3)(3)Al, precursor with graphene. A case of applying trimethylindium, (CH3)(3)In, precursor to epitaxial graphene was considered in a comparative way.
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| 5. |
- Pecz, Bela, et al.
(författare)
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Indium Nitride at the 2D Limit
- 2021
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Ingår i: Advanced Materials. - : WILEY-V C H VERLAG GMBH. - 0935-9648 .- 1521-4095. ; 33:1
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Tidskriftsartikel (refereegranskat)abstract
- The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in- and out-of-plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal-organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub-layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 +/- 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.
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| 6. |
- Sanz, Ruy, et al.
(författare)
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UV-black rutile TiO2: An antireflective photocatalytic nanostructure
- 2015
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 117:7, s. 074903-
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Tidskriftsartikel (refereegranskat)abstract
- This work presents an experimental study on the specific quantitative contributions of antireflective and effective surface areas on the photocatalytic and antibacterial properties of rutile TiO2 nanospikes. They are studied when continuously distributed over the whole surface and when integrated into well-defined microstructures. The nanospikes were produced following MeV ion beam irradiation of bulk rutile TiO2 single crystals and subsequent chemical etching. The ion beam irradiation generated embedded isolated crystalline nanoparticles inside an etchable amorphous TiO2 layer, and nanospikes fixed to the not etchable TiO2 bulk substrate. The produced nanospikes are shown to resist towards aggressive chemical environments and act as an efficient UV antireflective surface. The photocatalytic activity experiments were performed under the ISO 10678: 2010 protocol. The photonic and quantum efficiency are reported for the studied samples. The combined micro-and nanostructured surface triples the photonic efficiency compared to the initial flat surface. Results also revealed that the antireflective effect, due to the nanostructuring, is the dominating factor compared to the increase of surface area, for the observed photocatalytic response. The obtained results may be taken as a general strategy to design and precisely evaluate photoactive nanostructures. (C) 2015 AIP Publishing LLC.
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| 7. |
- Sfuncia, Gianfranco, et al.
(författare)
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2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface
- 2023
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Ingår i: CrystEngComm. - : ROYAL SOC CHEMISTRY. - 1466-8033. ; 25:41, s. 5810-5817
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Tidskriftsartikel (refereegranskat)abstract
- Beyond the predictions routinely achievable by first-principles calculations and using metal-organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled geometry obtained in confinement at the graphene/SiC interface. Conductive atomic force microscopy (C-AFM) was used to investigate vertical current injection across the graphene/SiC interface and to establish the uniformity of the intercalated regions. Scanning transmission electron microscopy (S/TEM) was used for atomic resolution imaging and spectroscopy along the growth direction. The experimentally obtained value of the buckling parameter, 1.01 & PLUSMN; 0.11 & ANGS;, adds to the existing knowledge of buckled GaN monolayers, which is based solely on predictive first-principles calculations. Our study reveals a discontinuity in the anticipated stacking sequence attributed to a few-layer graphitic-like GaN structure. Instead, we identify an atomic order suggestive of ultrathin gallium oxide Ga2O3, whose formation is apparently mediated by dissociative adsorption of oxygen onto the GaN monolayer. An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga2O3 on top.
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| 8. |
- Zhao, Haiguang, et al.
(författare)
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Dual emission in Asymmetric “Giant” PbS/CdS/CdS Core/Shell/Shell Quantum Dots
- 2016
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Ingår i: Nanoscale. - 2040-3364 .- 2040-3372. ; 8:7, s. 4217-4226
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Tidskriftsartikel (refereegranskat)abstract
- Semiconducting nanocrystals optically active in the infrared region of the electromagnetic spectrum enable exciting avenues in fundamental research and novel applications compatible with the infrared transparency windows of biosystems such as chemical and biological optical sensing, including nanoscale thermometry. In this context, quantum dots (QDs) with double color emission may represent ultra-accurate and self-calibrating nanosystems. We present the synthesis of giant core/shell/shell asymmetric QDs having a PbS/CdS Zincblende (Zb)/CdS Wurtzite (Wz) structure with double color emission close to the near-infrared (NIR)region. We show that the double emission depends on the excitation condition and analyze the electron-hole distribution responsible of the independent and simultaneous radiative exciton recombination in the PbS core and in the CdS Wz shell, respectively. These results highlight the importance of the driving force leading to preferential crystal growth in asymmetric QDs, and provide a pathway for a rational control of the synthesis of double color emitting giant QDs, leading to the effective exploitation of visible/NIR transparency windows.
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