| 1. |
- Kukli, K., et al.
(författare)
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Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:9-10, s. 2010-2013
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Tidskriftsartikel (refereegranskat)abstract
- Conformal ZrO2 and HfO2 thin films were grown by atomic layer deposition using novel liquid cyclopentadienyl precursors at 300 degrees C or 350 degrees C on planar Si wafers and deep trenched Si with an aspect ratio of 60:1. The crystal growth and phase content in as-deposited films depended on the precursor, film thickness, and the material grown. The structural and electrical behaviour of the films were somewhat precursor-dependent, revealing better insulating properties in the films grown from oxygen-containing precursors. Also the HfO2 films showed lower leakage compared to ZrO2.
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| 2. |
- Dezelah, Charles L., et al.
(författare)
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A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition
- 2007
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Ingår i: Journal of Materials Chemistry. - : Royal Society of Chemistry (RSC). - 0959-9428 .- 1364-5501. ; 17:11, s. 1109-1116
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Tidskriftsartikel (refereegranskat)abstract
- The atomic layer deposition growth of tungsten nitride films was demonstrated using the precursors W-2(NMe2)(6) and ammonia with substrate temperatures between 150 and 250 degrees C. At 180 degrees C, surface saturative growth was achieved with W-2(NMe2)(6) pulse lengths of >= 2.0 s. The growth rates were between 0.74 and 0.81 angstrom cycle(-1) at substrate temperatures between 180 and 210 degrees C. Growth rates of 0.57 and 0.96 angstrom cycle(-1) were observed at 150 and 220 degrees C, respectively. In a series of films deposited at 180 degrees C, the film thicknesses varied linearly with the number of deposition cycles. Films grown at 180 and 210 degrees C exhibited resistivity values between 810 and 4600 mu Omega cm. Time-of-flight elastic recoil detection analysis on tungsten nitride films containing a protective AlN overlayer demonstrated slightly nitrogen-rich films relative to W2N, with compositions of W1.0N0.82C0.13O0.26H0.33 at 150 degrees C, W1.0N0.74C0.20O0.33H0.28 at 180 degrees C, and W1.0N0.82C0.33O0.18H0.23 at 210 degrees C. In the absence of an AlN overlayer, the oxygen and hydrogen levels were much higher, suggesting that the films degrade in the presence of ambient atmosphere. The as-deposited films were amorphous. Amorphous films containing a protective AlN overlayer were annealed to 600 - 800 degrees C under a nitrogen atmosphere. X-Ray diffraction patterns suggested that crystallization does not occur at or below 800 degrees C. Similar annealing of films that did not contain the AlN overlayer afforded X-ray diffraction patterns that were consistent with orthorhombic WO3. Atomic force microscopy showed root-mean-square surface roughnesses of 0.9, 0.8, and 0.7 nm for films deposited at 150, 180, and 210 degrees C, respectively.
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| 3. |
- Lundgren, Markus, et al.
(författare)
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Analgesic antipyretic use among young children in the TEDDY study : No association with islet autoimmunity
- 2017
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Ingår i: BMC Pediatrics. - : Springer Science and Business Media LLC. - 1471-2431. ; 17:1
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Tidskriftsartikel (refereegranskat)abstract
- Background: The use of analgesic antipyretics (ANAP) in children have long been a matter of controversy. Data on their practical use on an individual level has, however, been scarce. There are indications of possible effects on glucose homeostasis and immune function related to the use of ANAP. The aim of this study was to analyze patterns of analgesic antipyretic use across the clinical centers of The Environmental Determinants of Diabetes in the Young (TEDDY) prospective cohort study and test if ANAP use was a risk factor for islet autoimmunity. Methods: Data were collected for 8542 children in the first 2.5 years of life. Incidence was analyzed using logistic regression with country and first child status as independent variables. Holm's procedure was used to adjust for multiplicity of intercountry comparisons. Time to autoantibody seroconversion was analyzed using a Cox proportional hazards model with cumulative analgesic use as primary time dependent covariate of interest. For each categorization, a generalized estimating equation (GEE) approach was used. Results: Higher prevalence of ANAP use was found in the U.S. (95.7%) and Sweden (94.8%) compared to Finland (78.1%) and Germany (80.2%). First-born children were more commonly given acetaminophen (OR 1.26; 95% CI 1.07, 1.49; p = 0.007) but less commonly Non-Steroidal Anti-inflammatory Drugs (NSAID) (OR 0.86; 95% CI 0.78, 0.95; p = 0.002). Acetaminophen and NSAID use in the absence of fever and infection was more prevalent in the U.S. (40.4%; 26.3% of doses) compared to Sweden, Finland and Germany (p < 0.001). Acetaminophen or NSAID use before age 2.5 years did not predict development of islet autoimmunity by age 6 years (HR 1.02, 95% CI 0.99-1.09; p = 0.27). In a sub-analysis, acetaminophen use in children with fever weakly predicted development of islet autoimmunity by age 3 years (HR 1.05; 95% CI 1.01-1.09; p = 0.024). Conclusions: ANAP use in young children is not a risk factor for seroconversion by age 6 years. Use of ANAP is widespread in young children, and significantly higher in the U.S. compared to other study sites, where use is common also in absence of fever and infection.
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