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- Chen, Weimin, 1959-, et al.
(författare)
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Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells : An obstacle to spin detection
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87:19, s. 192107-
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Tidskriftsartikel (refereegranskat)abstract
- Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors. © 2005 American Institute of Physics.
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| 5. |
- Chen, Weimin, 1959-, et al.
(författare)
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Spin relaxation in InGaN/Ga(Mn)N quantum wells
- 2005
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Ingår i: Bulletin of the American physical society. - 0003-0503. ; 50, s. 609-609
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Tidskriftsartikel (refereegranskat)abstract
- Proc. 2005 APS March Meeting, March 21-25, 2005; Los Angeles, CA, USA
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| 7. |
- Kayanuma, K, et al.
(författare)
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Transient photoluminescence spectroscopy of spin injection dynamics in double quantum wells of diluted magnetic semiconductors
- 2006
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Ingår i: Journal of Luminescence. - : Elsevier BV. - 0022-2313 .- 1872-7883. ; 119, s. 418-422
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Tidskriftsartikel (refereegranskat)abstract
- Dynamics of spin injection has been studied in double quantum wells (DQWs) composed of diluted magnetic and non-magnetic semiconductors. Picosecond-transient photoluminescence (PL) of excitons in the DQWs has been measured in magnetic field. In the Cd1-xMnxTe-based DQWs, the PL intensity of the magnetic well (MW) excitons decays faster with decreasing barrier width from 12 to 2 nm. This provides the evidence for carrier tunneling from the MW to the non-magnetic well (NW) through the barrier layer. The degree of circular polarization in the transient PL of the NW exciton in magnetic field shows marked evidence for spin injection and rapid spin relaxation in the DQW system. In the Zn1-yMnySe-based DQWs, the degree of circle polarization in the NW exciton PL at 3T shows a rise with a time constant of 400 ps, while the PL of the MW exciton decays within 50 ps. The observed result is interpreted by the individual spin injection for electrons and holes from the MW to the NW. The results of the transient PL of excitons in the DQWs are compared with the transient absorptions of excitons studied by the pump-and-probe spectroscopy. (c) 2006 Elsevier B.V. All rights reserved.
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| 8. |
- Koyama, T., et al.
(författare)
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Spin dynamics of type-II excitons in diluted magnetic double quantum wells
- 2007
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Ingår i: 28th Int. Conf. on the Physics of Semiconductors,2006. - : American Institute of Physics (AIP). ; , s. 465-
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Dynamical properties of the electron and hole spins are demonstrated indouble quantum wells composed of diluted magnetic and nonmagnetic semiconductors.Excitonic photoluminescence of the type-II transition appears for the lower-lyingdown-spin level of the exciton in magnetic field. A type-Iexciton transition is also observed for the opposite up-spin excitonstate. The result shows the spatial spin separation and thespin-injection dynamics for the heavy-hole spin states in the doublequantum wells. ©2007 American Institute of Physics
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| 9. |
- Toropov, A.A., et al.
(författare)
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Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 73:24, s. 245335-
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Tidskriftsartikel (refereegranskat)abstract
- We report on time-resolved photoluminescence studies of exciton dynamics in a ZnMnSe/ZnSSe type-II quantum well. Strong separation of the electrons, confined to the nonmagnetic semiconductor ZnSSe, and holes, confined to the diluted magnetic semiconductor ZnMnSe, results in an exciton lifetime exceeding 3 ns. Two excitonic emission lines are observed in this structure at low temperatures. The lower-energy line was associated with the formation of an exciton magnetic polaron (EMP), whereas the higher-energy line was attributed to the emission of nonmagnetically localized excitons. The intensity of the EMP line was found to saturate at a relatively low density of photoexcited carriers well below the exciton Mott density. This behavior evidences a limited density of sites where the hole localization radius is small enough to ensure the fast formation of EMP's with a noticeable binding energy. © 2006 The American Physical Society.
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