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| 7. |
- Blom, Hans-Olof, et al.
(författare)
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Removal of RSE induced damages in silicon
- 1986
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 4:3, s. 752-
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Tidskriftsartikel (refereegranskat)
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| 8. |
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| 9. |
- Bybrant, Mara Cerqueiro, et al.
(författare)
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The prevalence of having coeliac disease in children with type 1 diabetes was not significantly higher during the Swedish coeliac epidemic
- 2023
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Ingår i: Acta Paediatrica. - : John Wiley & Sons. - 0803-5253 .- 1651-2227. ; 112:10, s. 2175-2181
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Tidskriftsartikel (refereegranskat)abstract
- Aim: From 1986 to 1996, there was a four-fold increase in coeliac disease among young Swedish children, known as the Swedish coeliac epidemic. Children with type 1 diabetes have an increased risk of developing coeliac disease. We studied whether the prevalence of coeliac disease differed in children with type 1 diabetes born during and after this epidemic.Methods: We compared national birth cohorts of 240 844 children born in 1992–1993 during the coeliac disease epidemic and 179 530 children born in 1997–1998 after the epidemic. Children diagnosed with both type 1 diabetes and coeliac disease were identified by merging information from five national registers.Results: There was no statistically significant difference in the prevalence of coeliac disease among children with type 1 diabetes between the two cohorts: 176/1642 (10.7%, 95% confidence interval 9.2%–12.2%) in the cohort born during the coeliac disease epidemic versus 161/1380 (11.7%, 95% confidence interval 10.0%–13.5%) in the post-epidemic cohort.Conclusion: The prevalence of having both coeliac disease and type 1 diabetes was not significantly higher in children born during, than after, the Swedish coeliac epidemic. This may support a stronger genetic disposition in children who develop both conditions.
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| 10. |
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| 11. |
- Fahnestock, Jesse, 1974-, et al.
(författare)
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RISEnergy: Roadmaps for energy innovation in Sweden through 2030
- 2016
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Rapport (övrigt vetenskapligt/konstnärligt)abstract
- RISE Research Institutes of Sweden is a group of research and technology organisations. RISE is a leading innovation partner working global cooperation with academia, enterprise and society to create value, growth and competitiveness through research excellence and innovation.In the area of Energy, RISE has developed innovation Roadmaps covering:Energy Efficient TransportElectric Power SystemEnergy Efficient and Smart BuildingsSustainable Thermal ProcessesEfficient Energy Use in IndustryDecarbonisation of Basic IndustriesThese Roadmaps describe development pathways for technologies, non-technical elements (market design, user behaviours, policies, etc.) and key actors that deliver on a plausible, desirable vision for each respective innovation area in 2030. These Roadmaps are intended to support RISE’s strategic planning and development, but should be relevant reading for anyone interested in energy innovation in Sweden.
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| 12. |
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| 13. |
- Hansson, Hans, et al.
(författare)
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2 + 10 > 1 + 50 !
- 2000
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Ingår i: Lecture Notes in Computer Science, vol 1800. - : Springer Berlin/Heidelberg. - 354067442X ; , s. 734-737
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Bokkapitel (refereegranskat)abstract
- In traditional design of computer based systems some effort, say 1, is spent on the early modeling phases, and some very high effort, say 50, is spent on the later implementation and testing phases. It is the conjecture of this paper that the total effort can be substantially reduced if an increased effort, say 2, is spent on the early modeling phases. Such a shift in focus of efforts will also greatly improve the overall effects (both quality and cost-wise) of the systems dev eloped, there by leading to a better (denoted by "≻") design process. In this paper, w e specifically consider the design of safety-critical distributed real-time systems. © 2000 Springer-Verlag Berlin Heidelberg.
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| 14. |
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| 15. |
- Hu, Qitao, et al.
(författare)
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Current gain and low-frequency noise of symmetric lateral bipolar junction transistors on SOI
- 2018
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Ingår i: 2018 48th European Solid-State Device Research Conference (ESSDERC). - 9781538654019 - 9781538654002 - 9781538654026 ; , s. 258-261
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Konferensbidrag (refereegranskat)abstract
- This paper presents a comprehensive study of symmetric lateral bipolar junction transistors (LBJTs) fabricated on SOI substrate using a CMOS-compatible process; LBJTs find many applications including being a local signal amplifier for silicon-nanowire sensors. Our LBJTs are characterized by a peak gain (β) over 50 and low-frequency noise two orders of magnitude lower than what typically is of the SiO 2 /Si interface for a MOSFET. β is found to decrease at low base current due to recombination in the space charge region at the emitter-base junction and at the surrounding SiO 2 /Si interfaces. This decrease can be mitigated by properly biasing the substrate.
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| 16. |
- Johansson, Ted, et al.
(författare)
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A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
- 2013
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Konferensbidrag (refereegranskat)abstract
- Postlingually acquired hearing impairment (HI) is associated with changes in the representation of sound in semantic long-term memory. An indication of this is the lower performance on visual rhyme judgment tasks in conditions where phonological and orthographic cues mismatch, requiring high reliance on phonological representations. In this study, event-related potentials (ERPs) were used for the first time to investigate the neural correlates of phonological processing in visual rhyme judgments in participants with acquired HI and normal hearing (NH). Rhyme task word pairs rhymed or not and had matching or mismatching orthography. In addition, the inter-stimulus interval (ISI) was manipulated to be either long (800 ms) or short (50 ms). Long ISIs allow for engagement of explicit, top-down processes, while short ISIs limit the involvement of such mechanisms. We hypothesized lower behavioral performance and N400 and N2 deviations in HI in the mismatching rhyme judgment conditions, particularly in short ISI. However, the results showed a different pattern. As expected, behavioral performance in the mismatch conditions was lower in HI than in NH in short ISI, but ERPs did not differ across groups. In contrast, HI performed on a par with NH in long ISI. Further, HI, but not NH, showed an amplified N2-like response in the non-rhyming, orthographically mismatching condition in long ISI. This was also the rhyme condition in which participants in both groups benefited the most from the possibility to engage top-down processes afforded with the longer ISI. Taken together, these results indicate an early ERP signature of HI in this challenging phonological task, likely reflecting use of a compensatory strategy. This strategy is suggested to involve increased reliance on explicit mechanisms such as articulatory recoding and grapheme-to-phoneme conversion.
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| 17. |
- Johansson, Ted, et al.
(författare)
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A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
- 2013
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Ingår i: 2013 8th European Microwave Integrated Circuits Conference Proceedings. - 9782874870323 ; , s. 53-56
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Konferensbidrag (refereegranskat)abstract
- Generating high output power at radio frequencies in CMOS becomes more challenging as technology is scaled. Limitations mainly come from device design. We demonstrate the feasibility of an 10 V LDMOS device fabricated in 65 nm foundry CMOS technology with no added process steps or mask. DC, RF, and power characterization are presented which show the feasibility of the device. The LDMOS device is used in an integrated WLAN-PA design and 32.8 dBm linear output power in the 2.45 GHz band is achieved. Load-pull data also shows high output power capability at 5.8 GHz. The concept can also be used at 45 nm and 28 nm nodes in most foundry CMOS processes.
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| 18. |
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| 19. |
- Johansson, Ted, et al.
(författare)
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Influence of SOI-generated stress on BiCMOS performance
- 2006
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 50:6, s. 935-942
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Tidskriftsartikel (refereegranskat)abstract
- Two BiCMOS processes were adapted for SOI and the performance of the bipolar devices was studied. Differences in electrical parameters were observed, in particular the current gain, which processing or doping profiles could not explain, but correlated with observed stress in transistors. Simulation of the process flow with stress included revealed that stress was generated to a higher degree in the SOI wafers in the presence of deep trench isolation (DTI). Theoretical estimations and electrical simulations with and without stress yielded results consistent with observed data. Thus, we conclude that the observed differences are caused by process-induced in-plane biaxial stress.
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| 20. |
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| 21. |
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| 22. |
- Li, Ling-Guang, et al.
(författare)
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Oxide-Free Silicon to Silicon Carbide Heterobond
- 2008
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Ingår i: ESC Transactions. - : The Electrochemical Society. - 1938-6737 .- 1938-5862. ; 16:8, s. 377-383
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Tidskriftsartikel (refereegranskat)abstract
- Thin crystalline device layersof Si were bonded to Si-faced SiC wafers, with eithera chemical or a thermal oxide interface layer. The interfacethermal oxide was successfully removed by oxygen out-diffusion for 2.5h in an Ar atmosphere at 1250 oC. XTEM micrographsshowed that an abrupt transition between Si and SiC withcomplete removal of the interlayer oxide had been obtained. Stressgenerated during the cool-down process after oxygen out-diffusion was shownto be compressive. IR imaging and an optical microscopy verifiedthat no cracks occurred during cool-down.
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| 23. |
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| 24. |
- Li, Ling-Guang, 1982-, et al.
(författare)
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Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
- 2010
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 54:2, s. 153-157
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Tidskriftsartikel (refereegranskat)abstract
- We have made a comparative study of the oxygen out-diffusion process during heat treatment of SOI wafers and SiC-SOI hybrid substrates. SOI materials with three different thicknesses (2, 20 and 410 nm) of buried oxide (BOX) were used in the investigation High-resolution cross-sectional transmission electron microscopy (HRXTEM) together with laser interferometry was used to determine the remaining thickness of the BOX-layer after heat treatment. After complete removal of the BOX-layer of SOI wafers, the St/Si interface appears to be sharp and defect-free. Similar results were obtained for SiC-SOI hybrid substrates after removal of the entire buried oxide layer. For all combinations investigated oxide removal was accompanied by a thickness reduction and roughening of the silicon surface layer as verified by atomic force microscopy (AFM).
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| 25. |
- Li, Lingguang, et al.
(författare)
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Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
- 2009
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Ingår i: EUROSOI 2009 CONFERENCE PROCEEDINGS. ; , s. 85-86
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Konferensbidrag (refereegranskat)abstract
- We have studied the SiO2 out-diffusion (Ox-away) process from Si/SiC hybrid substrates (Si-SiO2-SiC), thin BOX SOI and commercial SOI. For the former two kinds of substrates, HRXTEM micrographs show that after complete oxygen out-diffusion, the Si/SiC or Si/Si interfaces are sharp, and apparently defect-free. The BOX of commercial SOI has partially been diffused away. For all three substrate types, the thickness of top thin Si layers has become thinner and the Si was discovered under HRXTEM above the top Si. XPS results indicate that it only contains Si.
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| 26. |
- Lotfi, Sara, et al.
(författare)
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Electrical and Thermal Characterization of 150 mm Silicon–on–polycrystalline-Silicon Carbide Hybrid Substrates
- 2010
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Ingår i: 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA. - 9781424491285 ; , s. 115-116
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Konferensbidrag (refereegranskat)abstract
- 150 mm Silicon–on–polycrystalline-Silicon Carbide (poly-SiC) hybrid substrates, without intermediate oxide layers have been realized by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step has been introduced before furnace annealing to avoid bubble formation, cracks and breakage. The final substrates are shown to be stress free. Electrical and thermal characterization of devices manufactured on the substrate using a MOS process show excellent performance.
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| 27. |
- Lotfi, Sara, et al.
(författare)
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Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 41:3, s. 480-487
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Tidskriftsartikel (refereegranskat)abstract
- Silicon-on-insulator (SOI) substrates can reduce RF-substrate losses due to their buried oxide (BOX). On the other hand, the BOX causes problems since it acts as a thermal barrier. Oxide has low thermal conductivity and traps the heat that is generated in devices on the SOI. This paper presents a hybrid substrate which uses a thin layer of poly-crystalline silicon and poly-crystalline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable buried oxide and the silicon substrate. 150 mm substrates were fabricated by wafer bonding and shown to be stress and strain free. Various electronic devices and test structures were processed on the hybrid substrate as well as on a low resistivity SOI reference wafer. The substrates were characterized electrically and thermally and compared to each other. Results showed that the Si-on-poly-SiC wafer had a 2.5 times lower thermal resistance and was equally or better in electrical performance compared to the SOI reference wafer.
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| 28. |
- Lotfi, Sara, et al.
(författare)
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LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
- 2011
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Ingår i: Proc. of EUROSOI 2011 workshop. ; , s. 153-154
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Konferensbidrag (refereegranskat)abstract
- Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher thermal conductivity and is semi-insulating. Successful LDMOS-transistors were processed on the 150 mm Silicon-on-polycrystalline-Silicon carbide (Si-on-poly-SiC) substrates with improved or equal electrical performance compared to a RF-optimized SOI substrate.
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| 29. |
- Lotfi, Sara, et al.
(författare)
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LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties
- 2012
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 70, s. 14-19
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Tidskriftsartikel (refereegranskat)abstract
- SOI enables reduced capacitive coupling in RF power technology but the thick oxide causes thermal problems. In this paper, the authors present a new type of substrate, where the oxide insulator and the silicon substrate in SOI, are replaced by silicon carbide (SiC). SiC has higher thermal conductivity and is semi-insulating which can improve the thermal and RF performance. Here, LDMOS-transistors are processed and characterized on 150 mm silicon-on-polycrystalline-silicon carbide (Si-on-poly-SiC) substrates as well as on high power and RF optimized SOI reference substrates. The electrical performance for the Si-on-poly-SiC was improved or equal compared to the SOI reference and the device self-heating was reduced. The hybrid substrate had lower RF losses and the RF measurements on transistors were not ideal due to no isolation between the devices.
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| 30. |
- Lotfi, Sara, et al.
(författare)
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Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates
- 2011
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Ingår i: 2011 IEEE International SOI Conference Proceedings. - 9781612847597
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Konferensbidrag (refereegranskat)abstract
- This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI. Furthermore, the gate oxide integrity was evaluated suggesting that the poly-Si layer in the Si/SiC hybrid may act as a gettering layer for impurities due to the lower QBD spread.
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| 31. |
- Mardani, Shabnam, 1983-
(författare)
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Copper and Silver Metallization for High Temperature Applications
- 2016
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- High-temperature electrical- and morphological-stability of interconnect is critical for electronic systems based on wide band gap (WBG) semiconductors. In this context, the thermal stability of both Ag and Cu films with Ta and TaN films as diffusion barriers and/or surface-capping layers at high temperatures up to 800 oC is investigated in this thesis.The investigation of un-capped Ag films with either Ta or TaN diffusion barrier layers shows electrical stability upon annealing up to 600 °C. Degradation occurs above 600 °C mainly as a result of void formation and Ag agglomeration. Sandwiching Ag films between Ta and/or TaN layers is found to electrically and morphologically stabilize the Ag metallization up to 800 °C. The barrier layer plays a key role; the β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause for the morphological instability of the film above 600 °C. This phase transition can be avoided using a stacked Ta/TaN barrier. Furthermore, no observable Ta diffusion in Ag films is found.Copper films with a Ta diffusion barrier show clearly different behaviors. In the Cu/Ta sample, Ta starts to diffuse up to the surface via fast-diffusing grain boundaries (GBs) after annealing at 500 °C. The activation energy for the GB diffusion is 1.0+0.3 eV. Un-capped Cu is electrically stable up to 800 °C. An appreciable increase in sheet resistance occurs above 600 °C for the asymmetric combinations Ta/Cu/TaN and TaN/Cu/Ta. This degradation is closely related to a substantial diffusion of Ta across the Cu film and on to the TaN layer, where Ta1+xN forms. The symmetrical combinations Ta/Cu/Ta and TaN/Cu/TaN show only small changes in sheet resistance even after annealing at 800 °C. No Ta diffusion can be found in the Ta/Cu/Ta and TaN/Cu/TaN stacks.Finally, the influence of barrier and cap, their interfaces to Cu and Ta diffusion and segregation in the Cu GBs on electromigration is studied. Our preliminary results with the TaN/Cu/Ta and TaN/Cu/TaN structures report a 2-fold higher activation energy and a 10-fold longer lifetime for the former, thus confirming an important role of the interface between Cu and the cap and/or barrier.
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| 32. |
- Mardani, Shabnam, 1983-, et al.
(författare)
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Electrical properties of Ag/Ta and Ag/TaN thin-films
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 257-261
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Tidskriftsartikel (refereegranskat)abstract
- Although wide band gap devices (WBG, e.g. GaN and SiC) are eminently suitable for high temperatures and harsh environments, these properties cannot be fully taken advantage of without an appropriate interconnect metallization. In this context, silver shows promise for interconnections at high temperatures. In this work, the thermal stability of Ag with two barrier metals – Ta and TaN – was therefore investigated. Metal stacks, consisting of 100 nm of silver on 45 nm of either Ta or TaN were sputter-deposited on the substrate. Each metal system was annealed in vacuum for one hour at temperatures up to 800 °C. Both systems showed stable performance up to 600 °C. The system with Ta as a barrier metal was found to be more stable than the TaN system. Above 700 °C, silver agglomeration led to degradation of electrical performance.
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| 33. |
- Mardani, Shabnam, 1983-, et al.
(författare)
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Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
- 2016
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 34:6
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Tidskriftsartikel (refereegranskat)abstract
- High-temperature stability of Cu-based interconnects is of technological importance for electronic circuits based on wide band gap semiconductors. In this study, different metal stack combinations using Ta or TaN as capping- and/or barrier-layer, in the configuration cap/Cu/barrier, are evaluated electrically and morphologically prior to and after high-temperature treatments. The symmetric combinations Ta/Cu/Ta and TaN/Cu/TaN are characterized by a low and stable sheet resistance after annealing up to 700 °C. Asymmetric combinations of Ta/Cu/TaN and TaN/Cu/Ta, however, display an increase in sheet resistance values after annealing at 500 °C and above. This increase in sheet resistance is considered to result from Ta diffusion into the grain boundaries of the Cu film. The preliminary electromigration studies on the TaN/Cu/Ta and TaN/Cu/TaN structures show a twofold higher activation energy and a tenfold longer lifetime for the former, thus suggesting an important role of the interface between Cu and the cap and/or barrier.
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| 34. |
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| 35. |
- Mardani, Shabnam, et al.
(författare)
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High-temperature Ta diffusion in the grain boundary of thin Cu films
- 2016
-
Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 34
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Tidskriftsartikel (refereegranskat)abstract
- In order to ascertain the applicability of the technologically well-established Cu metallization in high-temperature circuits, the authors have investigated layered metal stacks having one Ta/Cu interface at temperatures from 400 to 700 degrees C. The authors have found that Ta releases from the Ta layer and moves through the Cu film to the opposite interface via the grain boundaries. In the simplest bilayer stack with Cu on top of Ta, the up-diffused Ta on the surface spreads out over the Cu grains so as to cover the Cu grains completely at 650 degrees C. The activation energy for the grain boundary diffusion is found to be 1.060.3 eV. The Ta diffusion in the grain boundaries leads to stabilization of the Cu grain size at 360 nm and an increase in sheet resistance of the metal stack. The latter is in fact observed for all metal stacks having Cu in contact with Ta on one side and TaN or nothing at all on the other. The implication is that the Cu metallization with one Ta/Cu interface has to be stabilized by a preanneal at the highest anticipated operating temperature before use.
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| 36. |
- Mardani, Shabnam, et al.
(författare)
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Influence of tantalum/tantalum nitride barriers and caps on the high-temperature properties of copper metallization for wide-band gap applications
- 2015
-
Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 137, s. 37-42
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Tidskriftsartikel (refereegranskat)abstract
- Electronic devices and circuits based on wide-band gap (WBG) semiconductors and intended for operation at temperatures significantly exceeding 300 degrees C are currently being developed. It is important that the adjunct metallization matches the high-temperature properties of the devices. In the case of the technologically important Cu metallization, the most frequently used cap and barrier layer materials are Ta, TaN and combinations of these. They stabilize the interconnects and prevent Cu from diffusing into the surrounding material. In this study, different combinations of Ta and TaN layers are evaluated electrically and morphologically after high-temperature treatments. The cap/Cu/barrier stack shows an appreciable increase in sheet resistance above 600 degrees C for the asymmetric combinations Ta/Cu/TaN and TaN/Cu/Ta. This degradation is shown to be closely related to a substantial diffusion of Ta across the Cu film and on to the TaN layer, where Ta1+xN forms. The symmetrical combinations Ta/Cu/Ta and TaN/Cu/TaN show only small changes in sheet resistance on even after anneals at 800 degrees C. A less pronounced Ta diffusion into the Cu film is found for the Ta/Cu/Ta combination. The experimental observations are interpreted in terms of Cu grain growth, Ta segregation in the Cu grain boundaries and morphological degradation of the Cu film.
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| 37. |
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| 38. |
- Mardani, Shabnam, 1983-, et al.
(författare)
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Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer
- 2014
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 105, s. 071604-
-
Tidskriftsartikel (refereegranskat)abstract
- Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased deviceperformance in many fields of applications, such as high-temperature electronics. However, thereare still issues regarding the stability and reliability of WBG devices. Of particular importance isthe high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation canoccur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this studyis found to be electrically and morphologically stabilize the Ag metallization up to 800C, com-pared to 600C for uncapped films. However, the barrier layer plays a key role and TaN is found tobe superior to Ta, resulting in the best achieved stability, whereas the difference between Ta andTaN caps is negligible. The b-to-a phase transition in the underlying Ta barrier layer is identifiedas the major cause responsible for the morphological instability observed above 600C. It isshown that this phase transition can be avoided using a stacked Ta/TaN barrier.
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| 39. |
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| 40. |
- Myléus, Anna, 1978-, et al.
(författare)
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Celiac disease revealed in 3% of Swedish 12-year-olds born during an epidemic
- 2009
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Ingår i: Journal of Pediatric Gastroenterology and Nutrition - JPGN. - New York : Raven P. - 0277-2116 .- 1536-4801. ; 49:2, s. 170-176
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Tidskriftsartikel (refereegranskat)abstract
- Objetive: Sweden experienced a marked epidemic of celiac disease between 1984 and 1996 in children younger than 2 years of age, partly explained by changes in infant feeding. The objective of this study was to determine the prevalence of celiac disease in 12-year-olds born during the epidemic (1993), including both symptomatic and screening detected cases.Patients and methods: All sixth-grade children in participating schools were invited (n = 10,041). Symptomatic and, therefore, previously diagnosed celiac disease cases were ascertained through the National Swedish Childhood Celiac Disease Register and/or medical records. All serum samples were analyzed for antihuman tissue transglutaminase (tTG)-IgA (Celikey), and serum-IgA, and some for tTG-IgG and endomysial antibodies. A small intestinal biopsy was recommended for all children with suspected undiagnosed celiac disease.Results: Participation was accepted by 7567 families (75%). Previously diagnosed celiac disease was found in 67 children; 8.9/1000 (95% confidence interval [CI] 6.7-11). In another 192 children, a small intestinal biopsy was recommended and was performed in 180. Celiac disease was verified in 145 children, 20/1000 (95% CI 17-23). The total prevalence was 29/1000 (95% CI 25-33).Conclusions: The celiac disease prevalence of 29/1000 (3%)-with two thirds of cases undiagnosed before screening-is 3-fold higher than the usually suggested prevalence of 1%. When these 12-year-olds were infants, the prevailing feeding practice was to introduce gluten abruptly, often without ongoing breast-feeding, which might have contributed to this unexpectedly high prevalence.
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| 41. |
- Nolte, Thomas, 1977-
(författare)
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Share-Driven Scheduling of Embedded Networks
- 2006
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Many products are built from more or less independently developed subsystems. For instance, a car consists of subsystems for transmission, braking, suspension, etc. These subsystems are frequently controlled by an embedded computer system. In the automotive industry, as well as in other application domains, there is currently a trend from an approach where subsystems have dedicated computer hardware and other resources (a federated approach) to an approach where subsystems share hardware and other resources (an integrated approach). This is motivated by a strong pressure to reduce product cost, at the same time as an increasing number of subsystems are being introduced.When integrating subsystems, it is desirable that guarantees valid before integration are also valid after integration, since this would eliminate the need for costly reverifications. The computer network is a resource that is typically shared among all subsystems. Hence, a central issue when integrating subsystems is to provide an efficient scheduling of message transmissions on the network. There are essentially three families of schedulers that can be used: priority-driven schedulers that assign priorities to messages, time-driven schedulers that assign specific time-slots for transmission of specific messages, and share-driven schedulers that assign shares of the available network capacity to groups of messages.This thesis presents a framework for share-driven scheduling, to be implemented and used in embedded networks, with the aim to facilitate subsystem integration by reducing the risk of interference between subsystems. The framework is applied in the automotive domain.The initial parts of the thesis give an overview of systems, subsystems and network technologies found and used in the automotive domain. Then, the share-driven scheduling framework is presented, analytically investigated and proven, as well as evaluated in a simulation study. Finally it is shown how the framework is to be configured and used in the context of subsystem integration. The results show that the framework allows for flexible and efficient scheduling of messages with real-time constraints, facilitating integration of subsystems from a network point of view.
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| 42. |
- Nordyke, Katrina, et al.
(författare)
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Health-related quality of life in adolescents with screening-detected celiac disease, before and one year after diagnosis and initiation of gluten-free diet, a prospective nested case-referent study
- 2013
-
Ingår i: BMC Public Health. - : BioMed Central. - 1471-2458. ; 13
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Tidskriftsartikel (refereegranskat)abstract
- BACKGROUND: Celiac disease (CD) is a chronic disorder in genetically predisposed individuals in which a small intestinal immune-mediated enteropathy is precipitated by dietary gluten. It can be difficult to diagnose because signs and symptoms may be absent, subtle, or not recognized as CD related and therefore not prompt testing within routine clinical practice. Thus, most people with CD are undiagnosed and a public health intervention, which involves screening the general population, is an option to find those with unrecognized CD. However, how these screening-detected individuals experience the diagnosis and treatment (gluten-free diet) is not fully understood. The aim of this study is to investigate the health-related quality of life (HRQoL) of adolescents with screening-detected CD before and one year after diagnosis and treatment.METHODS: A prospective nested case-referent study was done involving Swedish adolescents who had participated in a CD screening study when they were in the sixth grade and about 12 years old. Screening-detected adolescents (n = 103) and referents without CD who participated in the same screening (n = 483) answered questionnaires at the time of the screening and approximately one year after the screening-detected adolescents had received their diagnosis that included the EQ-5D instrument used to measure health status and report HRQoL.RESULTS: The HRQoL for the adolescents with screening-detected CD is similar to the referents, both before and one year after diagnosis and initiation of the gluten-free diet, except in the dimension of pain at follow-up. In the pain dimension at follow-up, fewer cases reported problems than referents (12.6% and 21.9% respectively, Adjusted OR 0.50, 95% CI 0.27-0.94). However, a sex stratified analysis revealed that the significant difference was for boys at follow-up, where fewer screening-detected boys reported problems (4.3%) compared to referent boys (18.8%) (Adjusted OR 0.17, 95% CI 0.04-0.73).CONCLUSIONS: The findings of this study suggest that adolescents with unrecognized CD experience similar HRQoL as their peers without CD, both before and one year after diagnosis and initiation of gluten-free diet, except for boys in the dimension of pain at follow-up.
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- Shimanda, Panduleni Penipawa, 1989-, et al.
(författare)
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Socioeconomic factors associated with anaemia among children aged 6–59 months in Namibia
- 2020
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Ingår i: Journal of Public Health in Africa. - Pavia, Italy : PAGEPress Publications. - 2038-9922 .- 2038-9930. ; 11:1
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Tidskriftsartikel (refereegranskat)abstract
- Background: Anaemia remains a public health concern, and the its prevalence varies between countries as well as between age, sex and levels of poverty. This study aims at examining the association between socio-demographic factors and anaemia among children aged 6–59 months in Namibia.Methods: Data was extracted from the 2013 Namibian Demographic Health Survey. The association between anaemia and other factors was examined with logistic regression. Results are reported in odds ratio (OR), with 95% confidence intervals (CI).Results: In total, 1,383 children aged 6–59 months had complete data and included in the analyses. Our study shows that there is a statistically significantly increased risk of anaemia among children from poorer households compared with the richest quintile. Also, there was a statistically significance supporting anaemia being more common among boys than girls. There was also a statistically significant negative effect related to age.Discussion: Our study shows that young children, boys and children in poorer households have an increased risk of anaemia. Considering the adverse impact of anaemia on child development, policies must prioritise factors exacerbating anaemia risk.
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- Stöggl, Thomas, et al.
(författare)
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Automatic classification of the Sub-Techniques (Gears) used in cross-country ski skating employing a mobile phone
- 2014
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Ingår i: Sensors. - : MDPI AG. - 1424-8220. ; 14:11, s. 20589-20601
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Tidskriftsartikel (refereegranskat)abstract
- The purpose of the current study was to develop and validate an automatic algorithm for classification of cross-country (XC) ski-skating gears (G) using Smartphone accelerometer data. Eleven XC skiers (seven men, four women) with regional-to-international levels of performance carried out roller skiing trials on a treadmill using fixed gears (G2left, G2right, G3, G4left, G4right) and a 950-m trial using different speeds and inclines, applying gears and sides as they normally would. Gear classification by the Smartphone (on the chest) and based on video recordings were compared. Formachine-learning, a collective database was compared to individual data. The Smartphone application identified the trials with fixed gears correctly in all cases. In the 950-m trial, participants executed 140 ± 22 cycles as assessed by video analysis, with the automatic Smartphone application giving a similar value. Based on collective data, gears were identified correctly 86.0% ± 8.9% of the time, a value that rose to 90.3% ± 4.1% (P < 0.01) with machine learning from individual data. Classification was most often incorrect during transition between gears, especially to or from G3. Identification was most often correct for skiers who made relatively few transitions between gears. The accuracy of the automatic procedure for identifying G2left, G2right, G3, G4left and G4right was 96%, 90%, 81%, 88% and 94%, respectively. The algorithm identified gears correctly 100% of the time when a single gear was used and 90% of the time when different gears were employed during a variable protocol. This algorithm could be improved with respect to identification of transitions between gears or the side employed within a given gear.
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- Vallin, Örjan, et al.
(författare)
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150 mm Silicon-on-polycrystalline-Silicon Carbide
- 2010
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Ingår i: Proceedings of EUROSOI. ; , s. 101-102
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Konferensbidrag (refereegranskat)abstract
- 150 mm Silicon-on-polycrystallin-Silicon Carbie (poly-SiC) bybrid substrate, without intermediate oxide layers have been realised by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step was introduced before furnace annealing to avoid bubble formation, cracks and breakage. After removal of the Si handle and the buried oxide, the reamining Si device layer was shown to be stress free by Raman spectroscopy and X-ray diffraction (XRD) measurements.
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