| 1. |
- Posey, Victoria A., et al.
(författare)
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Two-dimensional heavy fermions in the van der Waals metal CeSiI
- 2024
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Ingår i: Nature. - : Springer Nature. - 0028-0836 .- 1476-4687. ; 625:7995, s. 483-488
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Tidskriftsartikel (refereegranskat)abstract
- Heavy-fermion metals are prototype systems for observing emergent quantum phases driven by electronic interactions1-6. A long-standing aspiration is the dimensional reduction of these materials to exert control over their quantum phases7-11, which remains a significant challenge because traditional intermetallic heavy-fermion compounds have three-dimensional atomic and electronic structures. Here we report comprehensive thermodynamic and spectroscopic evidence of an antiferromagnetically ordered heavy-fermion ground state in CeSiI, an intermetallic comprising two-dimensional (2D) metallic sheets held together by weak interlayer van der Waals (vdW) interactions. Owing to its vdW nature, CeSiI has a quasi-2D electronic structure, and we can control its physical dimension through exfoliation. The emergence of coherent hybridization of f and conduction electrons at low temperature is supported by the temperature evolution of angle-resolved photoemission and scanning tunnelling spectra near the Fermi level and by heat capacity measurements. Electrical transport measurements on few-layer flakes reveal heavy-fermion behaviour and magnetic order down to the ultra-thin regime. Our work establishes CeSiI and related materials as a unique platform for studying dimensionally confined heavy fermions in bulk crystals and employing 2D device fabrication techniques and vdW heterostructures12 to manipulate the interplay between Kondo screening, magnetic order and proximity effects.
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| 2. |
- Park, Jiwoong, et al.
(författare)
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Wiring up single molecules
- 2003
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 438-439, s. 457-461
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Tidskriftsartikel (refereegranskat)abstract
- The possibility of using single molecules as active elements of electronic devices offers a variety of scientific and technological opportunities. In this article, we discuss transistors, where electrons flow through discrete quantum states of a single molecule. First, we will describe molecules, where current flows through one cobalt atom surrounded by two insulating terpyridyl ligands. Depending on the length of the insulating part of the molecules, two different behaviors are observed: Coulomb blockade for a longer molecule and the Kondo effect for a shorter molecule. We will also discuss measurements of the C70 fullerene and its dimer (C140). In C140 devices, the transport measurements are affected by an intercage vibrational mode that has an energy of 11 meV. We observe a large current increase when this mode is excited, indicating a strong coupling between the electronic and mechanical degrees of freedom in C140 molecules.
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| 3. |
- Schiros, Theanne, et al.
(författare)
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Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene
- 2012
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 12:8, s. 4025-4031
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Tidskriftsartikel (refereegranskat)abstract
- Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.
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