| 1. |
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| 2. |
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| 3. |
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| 4. |
- Lang, J. J. K., et al.
(författare)
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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
- 2011
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 605:9-10, s. 883-888
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Tidskriftsartikel (refereegranskat)abstract
- Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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| 5. |
- Laukkanen, P., et al.
(författare)
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Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
- 2008
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 100, s. 086101-
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Tidskriftsartikel (refereegranskat)abstract
- First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
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| 6. |
- Punkkinen, M. P. J., et al.
(författare)
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Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces : Combined first-principles, photoemission, and scanning tunneling microscopy study
- 2008
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 78, s. 195304-
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Tidskriftsartikel (refereegranskat)abstract
- Bismuth adsorbate-stabilized (2x1) and (2x4) reconstructions of the GaAs(100) surfaces have been studied by first-principles calculations, valence-band and core-level photoelectron spectroscopies, and scanning tunneling microscopy. It is demonstrated that large Bi atom size leads to the formation of the pseudogap at the Fermi energy and to the lower energy of an adsorbate-derived surface band, which contributes to the stabilization of the exceptional Bi/GaAs(100)(2x1) reconstruction. It is proposed that the Bi/GaAs(100)(2x4) reconstructions include asymmetric mixed Bi-As dimers, in addition to the Bi-Bi dimers. Based on the calculations, we solve the atomic origins of the surface core-level shifts (SCLSs) of the Bi 5d photoemission spectra from the Bi/GaAs(100)(2x4) surfaces. This allows for resolving the puzzle related to the identification of two SCLS components often found in the measurements of the Bi 5d and Sb 4d core-level emissions of the Bi/III-V and Sb/III-V(100)(2x4) surfaces. Finally, the reason for the absence of the common (2x4)-beta 2 structure and additional support for the stability of the (2x1) structure on the Bi/III-V(100) surfaces are discussed in terms of Bi atom size and subsurface stress.
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| 7. |
- Saarikangas, J, et al.
(författare)
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Missing-in-metastasis MIM/MTSS1 promotes actin assembly at intercellular junctions and is required for integrity of kidney epithelia
- 2011
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Ingår i: Journal of cell science. - : The Company of Biologists. - 1477-9137 .- 0021-9533. ; 124:8Pt 8, s. 1245-1255
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Tidskriftsartikel (refereegranskat)abstract
- MIM/MTSS1 is a tissue-specific regulator of plasma membrane dynamics, whose altered expression levels have been linked to cancer metastasis. MIM deforms phosphoinositide-rich membranes through its I-BAR domain and interacts with actin monomers through its WH2 domain. Recent work proposed that MIM also potentiates Sonic hedgehog (Shh)-induced gene expression. Here, we generated MIM mutant mice and found that full-length MIM protein is dispensable for embryonic development. However, MIM-deficient mice displayed a severe urinary concentration defect caused by compromised integrity of kidney epithelia intercellular junctions, which led to bone abnormalities and end-stage renal failure. In cultured kidney epithelial (MDCK) cells, MIM displayed dynamic localization to adherens junctions, where it promoted Arp2/3-mediated actin filament assembly. This activity was dependent on the ability of MIM to interact with both membranes and actin monomers. Furthermore, results from the mouse model and cell culture experiments suggest that full-length MIM is not crucial for Shh signaling, at least during embryogenesis. Collectively, these data demonstrate that MIM modulates interplay between the actin cytoskeleton and plasma membrane to promote the maintenance of intercellular contacts in kidney epithelia.
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| 8. |
- Laukkanen, P., et al.
(författare)
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A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy
- 2007
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 601, s. 3395-
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Tidskriftsartikel (refereegranskat)abstract
- The bismuth-stabilized (2 x 4)-reconstructed InP(100) surface [Bi/InP(100)(2 x 4)] has been studied by synchrotron-radiation core-level photoelectron spectroscopy. The spectra are compared with previous core-level data obtained on a clean InP(100)(2 x 4) surface. The findings support that the P 2p surface-core-level shift (SCLS) of the clean InP(100)(2 x 4), which has higher kinetic energy than the bulk emission, arises from the third-layer P atoms and that the second P 2p SCLS, which has lower kinetic energy than the bulk, arises from the top-layer P atoms. Similar In 4d SCLSs are found on the clean and Bi-stabilized InP(100)(2 x 4) surfaces, indicating that these shifts contain contributions of the In atoms that lie in the second and/or fourth layers. In addition to this, the results improve our understanding of the atomic structure of the Bi/InP(100)(2 x 4) surface and lead to refined surface models which include Bi-Bi and Bi-P dimers. (C) 2007 Elsevier B.V. All rights reserved.
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| 9. |
- Laukkanen, P., et al.
(författare)
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Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate : Violation of the electron counting model
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 81:3
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Tidskriftsartikel (refereegranskat)abstract
- By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.
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| 10. |
- Laukkanen, P, et al.
(författare)
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Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
- 2005
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 72:4
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Tidskriftsartikel (refereegranskat)abstract
- Electronic and structural properties of GaAs(100)(2x4), InAs(100)(2x4), and Sb/InAs(100)(2x4) reconstructed surfaces have been studied by synchrotron-radiation photoelectron spectroscopy and scanning tunneling microscopy (STM). Based on the difference spectrum of As 3d core-level spectra of III-As(100)(2x4), measured in different surface-sensitivity conditions, as well as the line shape of the As 3d emission from the Sb-induced (2x4) surface, we give evidence that the As 3d spectra of GaAs(100)(2x4) and InAs(100)(2x4) consist of two surface-core-level-shifted components. One of them is shifted about 0.2 eV to the lower kinetic energy from the bulk component. On the basis of the relative component intensities, this surface-shifted As 3d component is assigned to the emission from the first-layer As dimers in the established model of the (2x4) surface. The other component, shifted about 0.3 eV to the higher kinetic energy, is connected to the third-layer As-dimer site. The comparison of the core-level results between GaAs(100)(2x4) and InAs(100)(2x4) suggests that the alpha 2 phase, which has one As dimer in both the first and third atomic layers per unit cell, exists on GaAs(100)(2x4), similarly to the case of InAs(100)(2x4), as predicted in theory but not observed to date. Furthermore, the STM observation of the GaAs(100)(2x4)alpha 2 phase is reported.
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| 11. |
- Punkkinen, Marko P. J., et al.
(författare)
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Core-level shifts of InP(100)(2 x 4) surface : Theory and experiment
- 2009
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 603:16, s. 2664-2668
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Tidskriftsartikel (refereegranskat)abstract
- Surface core-level shifts (SCLSs) of the (2 x 4)-reconstructed InP(100) surface with the established mixed In-P dimer structure have been investigated by first-principles calculations and photoelectron spectroscopy. Theoretical values were calculated using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy functional. The obtained theoretical values are quite similar within both approximations. The found differences originate in the tiny structural differences. It is concluded that the expansion or contraction of the crystal lattice has smaller effect on the SCLSs than the geometrical details of the reconstruction, which suggests that the Madelung potential has the dominant effect on the SCLSs. The results support the presence of a P 2p peak at higher binding energy (BE) compared to bulk peak, as proposed with recent measurements [P. Laukkamen, J. Pakarinen, M. Ahola-Tuomi, M. Kuzmin, R. E. Perala, I. J. Vayrynen, A. Tukiainen, V. Rimpilainen, M. Pessa, M. Adell, J. Sadowski, Surf. Sci. 600 (2006) 3022], and reveal several hitherto not reported SCLSs. The calculated SCLSs reproduce the measured spectra within reasonable accuracy. Furthermore, the atomic origins of the InP(100)(2 x 4) SCLSs are solved. In particular, it is shown that the lowest SCLS of P 2p, of the InP(100)(2 x 4) arises from the topmost In-P dimers.
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| 12. |
- Punkkinen, Marko P. J., et al.
(författare)
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Stability and structure of rare-earth metal and Ba-induced reconstructions on a Si(100) surface
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 80:23
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Tidskriftsartikel (refereegranskat)abstract
- We have studied, by means of ab initio calculations, the energetics and the atomic and electronic structures of various reconstructions induced by rare-earth metals (RE=Eu, Nd, Sm, and Yb) and Ba on Si(100) in the coverage range up to 0.5 monolayer. It is shown that Si dimer buckling is an important structural element for such systems, leading frequently to oblique surface lattice symmetries. The strong metal atom-silicon binding favors the increased amount of metal atoms per unit surface area, i.e., the (2x3) reconstruction with two metal atoms per unit cell is found to be energetically unstable with respect to the (2x1) reconstruction with three metal atoms per the same surface area [Eu/Si(100) and Yb/Si(100)]. The influence of the atomic size and the valence of the adsorbates is also investigated. In particular, it is found that an increase in atomic size stimulates the metal-metal repulsion, stabilizing the (2x3) configuration [Ba/Si(100)]. In the case of trivalent metals, the stabilization of the (2x3) is mediated by the loss of semiconducting state in the competing phases [Sm/Si(100) and Nd/Si(100)]. Our results demonstrate the importance of many factors, which account for the abundance of RE/Si(100) reconstructions. Finally, prominent atomic models are proposed for (2x3) and (2x6) reconstructions, and the character of the wavy "(1x2)" reconstruction is discussed. The simulated scanning tunneling microscopy images for the proposed (2x6) reconstruction are in a particularly good agreement with the complex experimental images.
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| 13. |
- Kuronen, A., et al.
(författare)
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Segregation, precipitation, and alpha-alpha ' phase separation in Fe-Cr alloys
- 2015
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 92:21
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Tidskriftsartikel (refereegranskat)abstract
- Iron-chromium alloys, the base components of various stainless steel grades, have numerous technologically and scientifically interesting properties. However, these features are not yet sufficiently understood to allow their full exploitation in technological applications. In this work, we investigate segregation, precipitation, and phase separation in Fe-Cr systems analyzing the physical mechanisms behind the observed phenomena. To get a comprehensive picture of Fe-Cr alloys as a function of composition, temperature, and time the present investigation combines Monte Carlo simulations using semiempirical interatomic potential, first-principles total energy calculations, and experimental spectroscopy. In order to obtain a general picture of the relation of the atomic interactions and properties of Fe-Cr alloys in bulk, surface, and interface regions several complementary methods have to be used. Using the exact muffin-tin orbitals method with the coherent potential approximation (CPA-EMTO) the effective chemical potential as a function of Cr content (0-15 at. % Cr) is calculated for a surface, second atomic layer, and bulk. At similar to 10 at. % Cr in the alloy the reversal of the driving force of a Cr atom to occupy either bulk or surface sites is obtained. The Cr-containing surfaces are expected when the Cr content exceeds similar to 10 at. %. The second atomic layer forms about a 0.3 eV barrier for the migration of Cr atoms between the bulk and surface atomic layer. To get information on Fe-Cr in larger scales we use semiempirical methods. However, for Cr concentration regions less than 10 at. %, the ab initio (CPA-EMTO) result of the important role of the second atomic layer to the surface is not reproducible from the large-scale Monte Carlo molecular dynamics (MCMD) simulation. On the other hand, for the nominal concentration of Cr larger than 10 at. % the MCMD simulations show the precipitation of Cr into isolated pockets in bulk Fe-Cr and the existence of the upper limit of the solubility of Cr into Fe layers in Fe/Cr layer systems. For high Cr concentration alloys the performed spectroscopic measurements support the MCMD simulations. Hard x-ray photoelectron spectroscopy and Auger electron spectroscopy investigations were carried out to explore Cr segregation and precipitation in the Fe/Cr double layer and Fe0.95Cr0.05 and Fe0.85Cr0.15 alloys. Initial oxidation of Fe-Cr was investigated experimentally at 10(-8) Torr pressure of the spectrometers showing intense Cr2O3 signal. Cr segregation and the formation of Cr-rich precipitates were traced by analyzing the experimental atomic concentrations and chemical shifts with respect to annealing time, Cr content, and kinetic energy of the exited electron.
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| 14. |
- Kuzmin, M., et al.
(författare)
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Atomic structure of Yb/Si(100)(2X6) : Interrelation between the silicon dimer arrangement and Si 2p photoemission line shape
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 82:11, s. 113302-
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Tidskriftsartikel (refereegranskat)abstract
- Combining photoelectron spectroscopy and density-functional theory calculations, we have studied the atomic geometry of Yb/Si(100)(2 X 6) reconstruction and the mechanisms responsible for its stabilization as well as the influence of this reconstruction on Si 2p core-level photoemission. The analysis of measured and calculated surface core-level shifts supports the recently proposed model of the Yb/Si(100)(2 X 6). It involves, in agreement with valence-band measurements, unbuckled (symmetrical) silicon dimers, leading to unusually narrowed Si 2p line shape as compared to those of related systems. The origin of the symmetrical dimers in the (2 X 6) structure is discussed in the context of previous results in literature.
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| 15. |
- Kuzmin, M., et al.
(författare)
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Surface core-level shifts on Ge(111)c(2 x 8) : Experiment and theory
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:24, s. 245319-
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Tidskriftsartikel (refereegranskat)abstract
- Combining high-resolution photoelectron spectroscopy and density functional theory (DFT) calculations, 3d photoemission line shape and surface core-level shifts have been reinvestigated on the Ge(111)c(2 x 8) surface. It is found that 3d spectra include, in addition to the bulk and three surface-shifted components reported in literature, a component that was not identified in earlier measurements with a lower resolution. The detailed interpretation of these spectra and their line shape is made on the basis of DFT calculations. It is shown that the lowest binding energy component is due to the rest atoms. The higher binding energy emission is caused by the adatoms and the third-layer atoms that are below the adatoms. Finally, the two other surface components originate from the first- and second-layer atoms. The screening effects in the Ge(111)c(2 x 8) are discussed.
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| 16. |
- Kuzmin, M., et al.
(författare)
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Yb-induced (2x3) and (2x4) reconstructions on Si(100) studied by first-principles calculations and high-resolution core-level photoelectron spectroscopy
- 2008
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 78:4
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Tidskriftsartikel (refereegranskat)abstract
- We report here a combined theoretical and experimental study of Yb/Si(100)-(2x3) and -(2x4) reconstructions by means of first-principles calculations and high-resolution core-level photoelectron spectroscopy. Energetically stable atomic structures are presented for these reconstructions. Yb atoms are found to occupy the cave sites in the structures, and the Si substrate is strongly rearranged due to Yb adsorption. It is shown that scanning tunneling microscopy images and surface core-level shifts (SCLSs) calculated for these atomic configurations agree with experimental data, giving further support to the models. In addition, by comparing our theoretical and experimental Si 2p results, we discuss and interpret the atomic origins of SCLSs measured for the YbSi(100)-(2x3)/(2x4). Finally, the results presented are helpful in the analysis of (2x3) and (2x4) structures induced by other rare earth metals on Si(100).
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| 17. |
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| 18. |
- Ahola-Tuomi, M., et al.
(författare)
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Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:24, s. 245401-
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Tidskriftsartikel (refereegranskat)abstract
- We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.
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| 19. |
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| 20. |
- Kuzmin, M., et al.
(författare)
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Atomic and electronic structure of the Yb/Ge(111)-(3x2) surface studied by high-resolution photoelectron spectroscopy
- 2007
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 75
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Tidskriftsartikel (refereegranskat)abstract
- Using high-resolution synchrotron-radiation photoelectron spectroscopy and low-energy electron diffraction, we have studied the electronic and structural properties of the Yb-induced Ge(111)-(3x2) reconstruction with a 1/6 monolayer coverage. We found these properties to be similar in many respects to those of the metal-induced Si(111) and Ge(111) reconstructions described previously in terms of the honeycomb chain-channel (HCC) structure. In particular, the Yb/Ge(111)-(3x2) is revealed to have a semiconducting character, the Yb atoms are divalent, and the surface states observed for the Yb/Ge(111) closely resemble those of the Na/Ge(111)-(3x1) in the literature. The Ge 3d core-level analysis, however, shows that the Ge 3d spectra from Yb/Ge(111)-(3x2) drastically differ from corresponding spectra of other Si and Ge HCC reconstructions. An atomic model, based on the general HCC geometry, is proposed for the Yb/Ge(111)-(3x2) surface. In this model, the important structural aspects are a buckling of the Ge = Ge double bond in the top, HCC-reconstructed layer plus a strong rearrangement of the second-layer atoms.
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| 21. |
- Kuzmin, M., et al.
(författare)
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Stability, structural, and electronic properties of atomic chains on Yb/Ge(111)3X2 studied by STM and STS
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:15, s. 155312-
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Tidskriftsartikel (refereegranskat)abstract
- By means of scanning tunneling microscopy and spectroscopy (STM/STS), we have investigated the stability and the structure of atomic chains on Yb/Ge (111) 3 X 2. STM allows the identification of different building blocks of this reconstruction, depending on the bias polarity and voltage, and validates the honeycomb chain-channel (HCC) structure with the Ge=Ge double bond and metal coverage of 1/6 ML for Yb/Ge (111)3 X 2, in agreement with the recent photoemission study [Kuzmin et al., Phys. Rev. B 75, 165305 (2007)]. The Yb atoms are found to be adsorbed on similar sites in the well-defined X 2 rows. Locally, such rows are distorted, leading to the X 4 periodicity, where the Yb atoms are adsorbed on two different sites that are well consistent with T4 and H3 sites. It is also assumed that Yb atoms can fluctuate rapidly between the neighboring T4 and H3 sites, leading to continuous rows observed together with the X 2 rows in STM images. The stability of Ge honeycomb chain is controlled by the presence of Yb atom per two (3 X 1) surface units in average, which results in the donation of one electron from Yb to the surface per (3 X 1) unit. When this density is locally changed, the Ge honeycomb chain is found to be broken. The inner structure of the Ge honeycomb chain is visualized in STM and shows dimerized features without any apparent buckling. The STM observations also account for why the double periodicity is missing in the low-energy electron diffraction pattern from Yb/Ge (111)3X2. The local electronic structure of this reconstruction, namely the Yb rows and Ge honeycomb chains, is studied by STS. The results support the HCC structure with the Ge=Ge double bond. It is believed that the present study elucidates the difference between the (3X2) reconstructions of Yb and Eu on Ge (111) and those of alkaline-earth and rare-earth metals on Si (111).
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| 22. |
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| 23. |
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| 24. |
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| 25. |
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| 26. |
- Laukkanen, P, et al.
(författare)
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Electronic and structural analysis of Sb-induced GaAs(100)(2x4) and (2x8) surfaces
- 2004
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 69:20
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Tidskriftsartikel (refereegranskat)abstract
- Electronic and structural properties of Sb-induced GaAs(100)(2x4) and (2x8) surfaces are studied by means of core-level and valence-band photoelectron spectroscopy utilizing synchrotron radiation and scanning tunneling microscopy. Combining these results and showing good consistency among them, we demonstrate that the Sb/GaAs(100)(2x4) surface is well compatible with the delta structural model, which includes one Sb dimer in both the first and third atomic layers and two second-layer Ga dimers per unit cell (i.e., the Sb coverage of 0.5 ML), giving experimental support to generality of the delta-type model for III-V(100)(2x4) surfaces, proposed previously on the basis of ab-initio calculations. Deconvolution of the Sb 4d core-level spectrum from the (2x4) surface shows two components, which are tentatively connected to two inequivalent Sb-dimer sites in the delta unit cell. Angle-resolved valence-band photoelectron spectroscopy reveals Sb-induced surface-derived states at near 0.4 and 0.6 eV below the valence-band maximum (VBM) for the Sb/GaAs(100)(2x4) surface, which have not been found in earlier measurements. These two surface-derived features mapped along symmetry lines of the surface Brillouin zone are identified with previous electronic-structure calculations. The results are also compared to band-structure measurements of the As/GaAs(100)(2x4) surface found in the literature. For the Sb/GaAs(100)(2x8) surface, we propose a structural model which, in contrast to the recent model, obeys the electron counting rule and consists of Sb dimers in three atomic layers, showing the Sb coverage of 1.25 ML for the (2x8) surface. The Sb 4d core-level spectrum from this surface exhibits three components, which are discussed within the determined structural model. The valence-band measurements of the (2x8) surface propose a new Sb-induced surface state at near 0.5 eV below the VBM.
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| 27. |
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| 28. |
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| 29. |
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| 30. |
- Zhou, A, et al.
(författare)
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Habitual coffee consumption and cognitive function: a Mendelian randomization meta-analysis in up to 415,530 participants
- 2018
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Ingår i: Scientific reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 8:1, s. 7526-
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Tidskriftsartikel (refereegranskat)abstract
- Coffee’s long-term effect on cognitive function remains unclear with studies suggesting both benefits and adverse effects. We used Mendelian randomization to investigate the causal relationship between habitual coffee consumption and cognitive function in mid- to later life. This included up to 415,530 participants and 300,760 coffee drinkers from 10 meta-analysed European ancestry cohorts. In each cohort, composite cognitive scores that capture global cognition and memory were computed using available tests. A genetic score derived using CYP1A1/2 (rs2472297) and AHR (rs6968865) was chosen as a proxy for habitual coffee consumption. Null associations were observed when examining the associations of the genetic score with global and memory cognition (β = −0.0007, 95% C.I. −0.009 to 0.008, P = 0.87; β = −0.001, 95% C.I. −0.005 to 0.002, P = 0.51, respectively), with high consistency between studies (Pheterogeneity > 0.4 for both). Domain specific analyses using available cognitive measures in the UK Biobank also did not support effects by habitual coffee intake for reaction time, pairs matching, reasoning or prospective memory (P ≥ 0.05 for all). Despite the power to detect very small effects, our meta-analysis provided no evidence for causal long-term effects of habitual coffee consumption on global cognition or memory.
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