| 1. |
- Dias, E.W.B, et al.
(författare)
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Breakdown of the independent particle approximation in high-energy photoionization
- 1997
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Ingår i: Physical Review Letters. - 0031-9007. ; 78:24, s. 4553-4556
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Tidskriftsartikel (refereegranskat)abstract
- The independent particle approximation is shown to break down for the photoionization of both inner and outer nl (l > 0) electrons of all atoms, at high enough energy, owing to interchannel interactions with the nearby ns photoionization channels. The effect is illustrated for Ne 2p in the 1 keV photon energy range through a comparison of theory and experiment. The implications for x-ray photoelectron spectroscopy of molecules and condensed matter are discussed.
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| 2. |
- Hemmers, O, et al.
(författare)
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Beyond the dipole approximation: angular-distribution effects in valence photoemission
- 1997
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Ingår i: Journal of Physics B: Atomic, Molecular and Optical Physics. - 0953-4075. ; 30:21, s. L727-L733
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Tidskriftsartikel (refereegranskat)abstract
- Angular distributions of valence photoelectrons showing effects due to highermultipole photon interactions have been measured for the first time. Neon 2s and 2p photoemission exhibits effects beyond the dipole approximation throughout the 250 to 1200 eV photon-energy range studied. The results suggest that any photoemission experiment, on any sample, can be affected at relatively low photon energies, pointing to a general need for caution in interpreting angle-resolved-photoemission measurements.
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| 3. |
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| 4. |
- Jayasinghe, R. C., et al.
(författare)
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Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
- 2012
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 24:43, s. 435803-
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of p-type InP epitaxial films with different doping concentrations are investigated by infrared absorption measurements accompanied by reflection and transmission spectra taken from 25 to 300 K. A complete dielectric function (DF) model, including intervalence band (IVB) transitions, free-carrier and lattice absorption, is used to determine the optical constants with improved accuracy in the spectral range from 2 to 35 mu m. The IVB transitions by free holes among the split-off, light-hole, and heavy-hole bands are studied using the DF model under the parabolic-band approximation. A good understanding of IVB transitions and the absorption coefficient is useful for designing high operating temperature and high detectivity infrared detectors and other optoelectronic devices. In addition, refractive index values reported here are useful for optoelectronic device designing, such as implementing p-InP waveguides in semiconductor quantum cascade lasers. The temperature dependence of hole effective mass and plasma frequency is also reported.
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