| 1. |
- Giuliani, G., et al.
(författare)
-
Round-Robin Measurements of Linewidth Enhancement Factor of Semiconductor Lasers in COST 288 Action
- 2007
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Ingår i: Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on. - 1424409306 - 9781424409303 ; , s. 4385967-
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Konferensbidrag (refereegranskat)abstract
- Round-robin measurements on the linewidth enhancement factor are carried out in many laboratories participating to EU COST 288 Action. Up to 7 different techniques are applied to DFB, VCSELs, QCL, and QD lasers, and results are compared.
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| 2. |
- Lang, J. J. K., et al.
(författare)
-
Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
- 2011
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 605:9-10, s. 883-888
-
Tidskriftsartikel (refereegranskat)abstract
- Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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| 3. |
- Laukkanen, P., et al.
(författare)
-
Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
- 2008
-
Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 100, s. 086101-
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Tidskriftsartikel (refereegranskat)abstract
- First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
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| 4. |
- Punkkinen, M. P. J., et al.
(författare)
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Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces : Combined first-principles, photoemission, and scanning tunneling microscopy study
- 2008
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 78, s. 195304-
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Tidskriftsartikel (refereegranskat)abstract
- Bismuth adsorbate-stabilized (2x1) and (2x4) reconstructions of the GaAs(100) surfaces have been studied by first-principles calculations, valence-band and core-level photoelectron spectroscopies, and scanning tunneling microscopy. It is demonstrated that large Bi atom size leads to the formation of the pseudogap at the Fermi energy and to the lower energy of an adsorbate-derived surface band, which contributes to the stabilization of the exceptional Bi/GaAs(100)(2x1) reconstruction. It is proposed that the Bi/GaAs(100)(2x4) reconstructions include asymmetric mixed Bi-As dimers, in addition to the Bi-Bi dimers. Based on the calculations, we solve the atomic origins of the surface core-level shifts (SCLSs) of the Bi 5d photoemission spectra from the Bi/GaAs(100)(2x4) surfaces. This allows for resolving the puzzle related to the identification of two SCLS components often found in the measurements of the Bi 5d and Sb 4d core-level emissions of the Bi/III-V and Sb/III-V(100)(2x4) surfaces. Finally, the reason for the absence of the common (2x4)-beta 2 structure and additional support for the stability of the (2x1) structure on the Bi/III-V(100) surfaces are discussed in terms of Bi atom size and subsurface stress.
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| 5. |
- Punkkinen, M. P. J., et al.
(författare)
-
Surface core-level shifts of GaAs(100)(2x4) from first principles
- 2007
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 76:11
-
Tidskriftsartikel (refereegranskat)abstract
- First-principles calculations show that measured surface core-level shifts (SCLSs) of the GaAs(100)(2x4) surfaces can be described within the initial state effects. The calculated As 3d and Ga 3d SCLSs for the beta 2 and alpha 2 reconstructions of the GaAs(100)(2x4) surfaces are in reasonable agreement with recent measurements. In particular, the results confirm that both the lower and the higher binding energy SCLSs, relative to the bulk emission in the As 3d photoelectron spectra, are intrinsic properties of the GaAs(100)(2x4) surfaces. The most positive and most negative As shifts are attributed to the third layer As atoms, which differs from the previous intuitive suggestions. In general, calculations show that significant SCLSs arise from deep layers, and that there are more than two SCLSs. Our previously measured As 3d spectra are fitted afresh using the calculated SCLSs. The intensity ratios of the SCLSs, obtained from the fits, show that as the heating temperature of the GaAs(100)(2x4) surface is increased gradually, the area of the alpha 2 reconstruction increases on the surface, but the beta 2 phase remains within the whole temperature range, in agreement with previous experimental findings. Our results show that the combination of the experimental and theoretical results is a prerequisite for the accurate analysis of the SCLSs of the complex reconstructed surfaces.
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| 6. |
- Lang, J. J. K., et al.
(författare)
-
Ab initio and scanning tunneling microscopy study of an indium-terminated GaAs(100) surface : An indium-induced surface reconstruction change in the c(8x2) structure
- 2010
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:24, s. 245305-
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Tidskriftsartikel (refereegranskat)abstract
- Technologically useful indium- (In) terminated c(8 x 2)-reconstructed GaAs(100) substrate surface has been studied by first-principles calculations and scanning tunneling microscopy (STM) measurements. Our total-energy calculations demonstrate the stability of four different so-called zeta a structures with In monomer rows and In coverage between 0.5 and 2 monolayers on the GaAs(100) substrate. Thus, we introduce a surface system, which stabilizes the zeta a reconstruction. Furthermore, an interesting trend is found. Atomic structure of the c(8 x 2) reconstruction depends on the surface-layer cation and substrate volumes, which, in principle, allows to tune the surface structure by cation adsorption. This phenomenon is related to the peculiar c(8 x 2) atomic surface structure, which shows mixed surface layer, including both anions and cations, and uncommon metallic-type cations in the zeta a structure, which do not show covalent bonds. Our results predict a structural transition from the zeta structure to the zeta a structure as the surface cation size is increased at 0 K. The found transition is probably related to the disordered surface structures (consisting of zeta and zeta a building blocks) found experimentally by x-ray diffraction at room temperature. Comparison of the STM images, calculated for various c(8 x 2) models, with the former and present measured STM images of In/GaAs(100) c(8 x 2) supports the presence of stable zeta a reconstructions.
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| 7. |
- Laukkanen, P., et al.
(författare)
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A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy
- 2007
-
Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 601, s. 3395-
-
Tidskriftsartikel (refereegranskat)abstract
- The bismuth-stabilized (2 x 4)-reconstructed InP(100) surface [Bi/InP(100)(2 x 4)] has been studied by synchrotron-radiation core-level photoelectron spectroscopy. The spectra are compared with previous core-level data obtained on a clean InP(100)(2 x 4) surface. The findings support that the P 2p surface-core-level shift (SCLS) of the clean InP(100)(2 x 4), which has higher kinetic energy than the bulk emission, arises from the third-layer P atoms and that the second P 2p SCLS, which has lower kinetic energy than the bulk, arises from the top-layer P atoms. Similar In 4d SCLSs are found on the clean and Bi-stabilized InP(100)(2 x 4) surfaces, indicating that these shifts contain contributions of the In atoms that lie in the second and/or fourth layers. In addition to this, the results improve our understanding of the atomic structure of the Bi/InP(100)(2 x 4) surface and lead to refined surface models which include Bi-Bi and Bi-P dimers. (C) 2007 Elsevier B.V. All rights reserved.
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| 8. |
- Laukkanen, P., et al.
(författare)
-
Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate : Violation of the electron counting model
- 2010
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 81:3
-
Tidskriftsartikel (refereegranskat)abstract
- By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.
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| 9. |
- Laukkanen, P., et al.
(författare)
-
Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
- 2010
-
Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 177:1, s. 52-57
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.
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| 10. |
- Laukkanen, P, et al.
(författare)
-
Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
- 2005
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 72:4
-
Tidskriftsartikel (refereegranskat)abstract
- Electronic and structural properties of GaAs(100)(2x4), InAs(100)(2x4), and Sb/InAs(100)(2x4) reconstructed surfaces have been studied by synchrotron-radiation photoelectron spectroscopy and scanning tunneling microscopy (STM). Based on the difference spectrum of As 3d core-level spectra of III-As(100)(2x4), measured in different surface-sensitivity conditions, as well as the line shape of the As 3d emission from the Sb-induced (2x4) surface, we give evidence that the As 3d spectra of GaAs(100)(2x4) and InAs(100)(2x4) consist of two surface-core-level-shifted components. One of them is shifted about 0.2 eV to the lower kinetic energy from the bulk component. On the basis of the relative component intensities, this surface-shifted As 3d component is assigned to the emission from the first-layer As dimers in the established model of the (2x4) surface. The other component, shifted about 0.3 eV to the higher kinetic energy, is connected to the third-layer As-dimer site. The comparison of the core-level results between GaAs(100)(2x4) and InAs(100)(2x4) suggests that the alpha 2 phase, which has one As dimer in both the first and third atomic layers per unit cell, exists on GaAs(100)(2x4), similarly to the case of InAs(100)(2x4), as predicted in theory but not observed to date. Furthermore, the STM observation of the GaAs(100)(2x4)alpha 2 phase is reported.
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| 11. |
- Laukkanen, P., et al.
(författare)
-
Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
- 2011
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:23, s. 231908-1-231908-3
-
Tidskriftsartikel (refereegranskat)abstract
- Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
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| 12. |
- Punkkinen, Marko P. J., et al.
(författare)
-
Core-level shifts of InP(100)(2 x 4) surface : Theory and experiment
- 2009
-
Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 603:16, s. 2664-2668
-
Tidskriftsartikel (refereegranskat)abstract
- Surface core-level shifts (SCLSs) of the (2 x 4)-reconstructed InP(100) surface with the established mixed In-P dimer structure have been investigated by first-principles calculations and photoelectron spectroscopy. Theoretical values were calculated using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy functional. The obtained theoretical values are quite similar within both approximations. The found differences originate in the tiny structural differences. It is concluded that the expansion or contraction of the crystal lattice has smaller effect on the SCLSs than the geometrical details of the reconstruction, which suggests that the Madelung potential has the dominant effect on the SCLSs. The results support the presence of a P 2p peak at higher binding energy (BE) compared to bulk peak, as proposed with recent measurements [P. Laukkamen, J. Pakarinen, M. Ahola-Tuomi, M. Kuzmin, R. E. Perala, I. J. Vayrynen, A. Tukiainen, V. Rimpilainen, M. Pessa, M. Adell, J. Sadowski, Surf. Sci. 600 (2006) 3022], and reveal several hitherto not reported SCLSs. The calculated SCLSs reproduce the measured spectra within reasonable accuracy. Furthermore, the atomic origins of the InP(100)(2 x 4) SCLSs are solved. In particular, it is shown that the lowest SCLS of P 2p, of the InP(100)(2 x 4) arises from the topmost In-P dimers.
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| 13. |
- Punkkinen, Marko Patrick John, et al.
(författare)
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Oxidized In-containing III-V(100) surfaces : Formation of crystalline oxide films and semiconductor-oxide interfaces
- 2011
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:19, s. 195329-
-
Tidskriftsartikel (refereegranskat)abstract
- Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.
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| 14. |
- Punkkinen, Marko P. J., et al.
(författare)
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Stability and structure of rare-earth metal and Ba-induced reconstructions on a Si(100) surface
- 2009
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 80:23
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied, by means of ab initio calculations, the energetics and the atomic and electronic structures of various reconstructions induced by rare-earth metals (RE=Eu, Nd, Sm, and Yb) and Ba on Si(100) in the coverage range up to 0.5 monolayer. It is shown that Si dimer buckling is an important structural element for such systems, leading frequently to oblique surface lattice symmetries. The strong metal atom-silicon binding favors the increased amount of metal atoms per unit surface area, i.e., the (2x3) reconstruction with two metal atoms per unit cell is found to be energetically unstable with respect to the (2x1) reconstruction with three metal atoms per the same surface area [Eu/Si(100) and Yb/Si(100)]. The influence of the atomic size and the valence of the adsorbates is also investigated. In particular, it is found that an increase in atomic size stimulates the metal-metal repulsion, stabilizing the (2x3) configuration [Ba/Si(100)]. In the case of trivalent metals, the stabilization of the (2x3) is mediated by the loss of semiconducting state in the competing phases [Sm/Si(100) and Nd/Si(100)]. Our results demonstrate the importance of many factors, which account for the abundance of RE/Si(100) reconstructions. Finally, prominent atomic models are proposed for (2x3) and (2x6) reconstructions, and the character of the wavy "(1x2)" reconstruction is discussed. The simulated scanning tunneling microscopy images for the proposed (2x6) reconstruction are in a particularly good agreement with the complex experimental images.
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| 15. |
- Rodríguez, M. Jimena, et al.
(författare)
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PHANGS–JWST First Results : Dust-embedded Star Clusters in NGC 7496 Selected via 3.3 μm PAH Emission
- 2023
-
Ingår i: Astrophysical Journal Letters. - : American Astronomical Society. - 2041-8205 .- 2041-8213. ; 944:2
-
Tidskriftsartikel (refereegranskat)abstract
- The earliest stages of star formation occur enshrouded in dust and are not observable in the optical. Here we leverage the extraordinary new high-resolution infrared imaging from JWST to begin the study of dust-embedded star clusters in nearby galaxies throughout the Local Volume. We present a technique for identifying dust-embedded clusters in NGC 7496 (18.7 Mpc), the first galaxy to be observed by the PHANGS–JWST Cycle 1 Treasury Survey. We select sources that have strong 3.3 μm PAH emission based on a F300M − F335M color excess and identify 67 candidate embedded clusters. Only eight of these are found in the PHANGS-HST optically selected cluster catalog, and all are young (six have SED fit ages of ∼1 Myr). We find that this sample of embedded cluster candidates may significantly increase the census of young clusters in NGC 7496 from the PHANGS-HST catalog; the number of clusters younger than ∼2 Myr could be increased by a factor of 2. Candidates are preferentially located in dust lanes and are coincident with the peaks in the PHANGS-ALMA CO (2–1) maps. We take a first look at concentration indices, luminosity functions, SEDs spanning from 2700 Å to 21 μm, and stellar masses (estimated to be between ∼104 and 105 M⊙). The methods tested here provide a basis for future work to derive accurate constraints on the physical properties of embedded clusters, characterize the completeness of cluster samples, and expand analysis to all 19 galaxies in the PHANGS–JWST sample, which will enable basic unsolved problems in star formation and cluster evolution to be addressed.
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| 16. |
- Villafranca, A., et al.
(författare)
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Linewidth Enhancement Factor of Semiconductor Lasers : Results from Round-Robin Measurements in COST 288
- 2007
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Ingår i: 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5.
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Konferensbidrag (refereegranskat)abstract
- Round-robin measurements on the linewidth enhancement factor are carried out within several laboratories participating to EU COST 288 action. The alpha-factor is measured by applying up to 7 different techniques. The obtained results are compared.
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| 17. |
- Dumitrescu, M., et al.
(författare)
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Un-Cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range
- 2008
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Ingår i: 2008 International Semiconductor Conference, CAS 2008; Sinaia; Romania; 13 October 2008 through 15 October 2008. - 9781424420049 ; 1, s. 61-70
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Konferensbidrag (refereegranskat)abstract
- Dilute-nitride-based edge-emitting Fabry-Perot lasers with record performances have been used to build un-cooled optical transceiver modules. The paper presents and analyses some of the achieved performances starting from chip level to optical link transmission experiments. The studies, performed within the EU-FP6 project FAST ACCESS, prove that the dilute-nitride GaInAsN lasers are a good solution for low-cost un-cooled transmitters targeting short and medium distance optical communications in a wide range of applications, from supercomputers and server farms to metropolitan and access area networks.
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| 18. |
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| 19. |
- Punkkinen, Marko P. J., et al.
(författare)
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Structure of ordered oxide on InAs(100) surface
- 2012
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 606:23-24, s. 1837-1841
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Tidskriftsartikel (refereegranskat)abstract
- It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In - O - In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 x 1) reconstruction than within the competing (2 x 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap. (C) 2012 Elsevier B.V. All rights reserved.
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| 20. |
- Amann, M. C., et al.
(författare)
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Focus on advanced semiconductor heterostructures for optoelectronics
- 2009
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 11, s. 125012 artno-
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures.
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| 21. |
- Gross, Sean M., et al.
(författare)
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A multi-omic analysis of MCF10A cells provides a resource for integrative assessment of ligand-mediated molecular and phenotypic responses
- 2022
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Ingår i: Communications Biology. - : Springer Nature. - 2399-3642. ; 5:1
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Tidskriftsartikel (refereegranskat)abstract
- The phenotype of a cell and its underlying molecular state is strongly influenced by extracellular signals, including growth factors, hormones, and extracellular matrix proteins. While these signals are normally tightly controlled, their dysregulation leads to phenotypic and molecular states associated with diverse diseases. To develop a detailed understanding of the linkage between molecular and phenotypic changes, we generated a comprehensive dataset that catalogs the transcriptional, proteomic, epigenomic and phenotypic responses of MCF10A mammary epithelial cells after exposure to the ligands EGF, HGF, OSM, IFNG, TGFB and BMP2. Systematic assessment of the molecular and cellular phenotypes induced by these ligands comprise the LINCS Microenvironment (ME) perturbation dataset, which has been curated and made publicly available for community-wide analysis and development of novel computational methods ( synapse.org/LINCS_MCF10A ). In illustrative analyses, we demonstrate how this dataset can be used to discover functionally related molecular features linked to specific cellular phenotypes. Beyond these analyses, this dataset will serve as a resource for the broader scientific community to mine for biological insights, to compare signals carried across distinct molecular modalities, and to develop new computational methods for integrative data analysis.
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| 22. |
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| 23. |
- Thilker, David A., et al.
(författare)
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PHANGS–JWST First Results : The Dust Filament Network of NGC 628 and Its Relation to Star Formation Activity
- 2023
-
Ingår i: Astrophysical Journal Letters. - : American Astronomical Society. - 2041-8205 .- 2041-8213. ; 944:2
-
Tidskriftsartikel (refereegranskat)abstract
- PHANGS–JWST mid-infrared (MIR) imaging of nearby spiral galaxies has revealed ubiquitous filaments of dust emission in intricate detail. We present a pilot study to systematically map the dust filament network (DFN) at multiple scales between 25 and 400 pc in NGC 628. MIRI images at 7.7, 10, 11.3, and 21 μm of NGC 628 are used to generate maps of the filaments in emission, while PHANGS–HST B-band imaging yields maps of dust attenuation features. We quantify the correspondence between filaments traced by MIR thermal continuum/polycyclic aromatic hydrocarbon (PAH) emission and filaments detected via extinction/scattering of visible light; the fraction of MIR flux contained in the DFN; and the fraction of H ii regions, young star clusters, and associations within the DFN. We examine the dependence of these quantities on the physical scale at which the DFN is extracted. With our highest-resolution DFN maps (25 pc filament width), we find that filaments in emission and attenuation are cospatial in 40% of sight lines, often exhibiting detailed morphological agreement; that ∼30% of the MIR flux is associated with the DFN; and that 75%–80% of the star formation in H ii regions and 60% of the mass in star clusters younger than 5 Myr are contained within the DFN. However, the DFN at this scale is anticorrelated with looser associations of stars younger than 5 Myr identified using PHANGS–HST near-UV imaging. We discuss the impact of these findings on studies of star formation and the interstellar medium, and the broad range of new investigations enabled by multiscale maps of the DFN.
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| 24. |
- Chen, Weimin, 1959-, et al.
(författare)
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Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
- 2002
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Ingår i: MRS Fall Meeting 2001,2001. - Materials Research Society Symposium - Proceedings, Vol. 692 : MRS. ; , s. 67-72
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Konferensbidrag (refereegranskat)abstract
- The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.
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| 25. |
- Dumitrescu, Mihail, et al.
(författare)
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10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
- 2009
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Ingår i: 2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009. - Washington, D.C. : OSA. - 9781557528650
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Konferensbidrag (refereegranskat)abstract
- Dilute-nitride lasers with record performances have been used to build uncooled transceivers and failure free 10 Gb/s optical transmission was achieved over 815 m of multimode Corning InfiniCor fiber under the LRM standard.
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| 26. |
- Puustinen, J., et al.
(författare)
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1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time
- 2010
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Ingår i: Emerging trends and novel materials in photonics. - : American Institute of Physics (AIP). - 9780735408432 ; , s. 200-203
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Konferensbidrag (refereegranskat)abstract
- The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump-probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode-locked laser setup was studied with a Bi-doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in-situ irradiation method for device applications.
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