| 1. |
- Opheim, G., et al.
(författare)
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7T Epilepsy Task Force Consensus Recommendations on the Use of 7T MRI in Clinical Practice
- 2021
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Ingår i: Neurology. - : Ovid Technologies (Wolters Kluwer Health). - 0028-3878 .- 1526-632X. ; 96:7, s. 327-341
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Tidskriftsartikel (refereegranskat)abstract
- Identifying a structural brain lesion on MRI has important implications in epilepsy and is the most important factor that correlates with seizure freedom after surgery in patients with drug-resistant focal onset epilepsy. However, at conventional magnetic field strengths (1.5 and 3T), only approximately 60%-85% of MRI examinations reveal such lesions. Over the last decade, studies have demonstrated the added value of 7T MRI in patients with and without known epileptogenic lesions from 1.5 and/or 3T. However, translation of 7T MRI to clinical practice is still challenging, particularly in centers new to 7T, and there is a need for practical recommendations on targeted use of 7T MRI in the clinical management of patients with epilepsy. The 7T Epilepsy Task Force-an international group representing 21 7T MRI centers with experience from scanning over 2,000 patients with epilepsy-would hereby like to share its experience with the neurology community regarding the appropriate clinical indications, patient selection and preparation, acquisition protocols and setup, technical challenges, and radiologic guidelines for 7T MRI in patients with epilepsy. This article mainly addresses structural imaging; in addition, it presents multiple nonstructural MRI techniques that benefit from 7T and hold promise as future directions in epilepsy. Answering to the increased availability of 7T MRI as an approved tool for diagnostic purposes, this article aims to provide guidance on clinical 7T MRI epilepsy management by giving recommendations on referral, suitable 7T MRI protocols, and image interpretation.
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| 2. |
- Buyanova, Irina A, et al.
(författare)
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Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
- 2006
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 376, s. 568-570
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Tidskriftsartikel (refereegranskat)abstract
- Hydrogen incorporation is shown to cause passivation of various N-related localized states and partial neutralization of N-induced changes in the electronic structure of the GaNxP1-x alloys with x < 0.008. According to the performed X-ray diffraction measurements, the hydrogenation is also found to cause strong expansion of the GaNP lattice which even changes from a tensile strain in the as-grown GaNP epilayers to a compressive strain in the post-hydrogenated structures with the highest H concentration. By comparing results obtained using two types of hydrogen treatments, i.e. by implantation from a Kaufman source and by using a remote dc H plasma, the observed changes are shown to be inherent to H due to its efficient complexing with N atoms, whereas possible effects of implantation damage are only marginal. (c) 2005 Elsevier B.V. All rights reserved.
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| 3. |
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| 4. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
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Activation of defects in GaNP by post-growth hydrogen treatment
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Effect of post-growth hydrogen treatment on defects and their role in carrier recombination in molecular beam epitaxial GaNP alloys is examined by means of photoluminescence and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several different defects in carrier recombination by the hydrogen treatment. Among them, two defect complexes are identified to contain a Ga interstitial (Gai). None of the activated Gai complexes was previously observed in GaNP. Possible mechanisms for the hydrogen-induced defect activation are discussed.
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| 5. |
- Felici, M, et al.
(författare)
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High Energy Optical Transitions in Ga(PN) : Contribution from Perturbed Valence Band
- 2005
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Ingår i: AIP Conference Proceedings / Volume 772. - : American Institute of Physics (AIP). - 0735402574 ; , s. 265-
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Konferensbidrag (refereegranskat)abstract
- The GaP1–xNx conduction band is investigated experimentally (by excitation photoluminescence) andtheoretically (by pseudopotential supercells) for N concentrations up to x=3.5%and photon energies ranging from the optical absorption edge to3.2 eV. With increasing x: (i) a direct-like absorption edgedevelops smoothly and red-shifts rapidly overtaking energy-pinned cluster states; (ii)a broad absorption plateau appears between the X1c and the1c critical points of GaP; (iii) the 1c absorption edgebroadens and gradually disappears. Empirical pseudopotential calculations for GaP1-xNx randomalloy supercells account well for all the PLE results byconsidering N induced changes in the valence band overlooked sofar. ©2005 American Institute of Physics
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| 6. |
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| 7. |
- Polimeni, A., et al.
(författare)
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Hydrogen related effects in diluted nitrides
- 2003
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Ingår i: 22nd Int. Conf. on Defects in Semiconductors,2003. - : Elsevier. ; , s. 371-
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Konferensbidrag (refereegranskat)abstract
- Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.
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| 8. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 9. |
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| 10. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Hydrogen-induced improvements in optical quality of GaNAs alloys
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:21, s. 3662-3665
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Tidskriftsartikel (refereegranskat)abstract
- Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band gap, is revealed from temperature-dependent photoluminescence (PL) and PL excitation measurements. The effect likely indicates preferential trapping of hydrogen near the lattice sites with the highest nitrogen content. A remarkable improvement in the radiative efficiency of the alloys at room temperature is also demonstrated and is ascribed to efficient hydrogen passivation of competing nonradiative centers.
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| 11. |
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| 12. |
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| 13. |
- Dagnelund, Daniel, et al.
(författare)
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Effect of postgrowth hydrogen treatment on defects in GaNP
- 2011
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Ingår i: APPLIED PHYSICS LETTERS. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 98:14, s. 141920-
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Tidskriftsartikel (refereegranskat)abstract
- Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (andlt;= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment.
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| 14. |
- Dagnelund, Daniel, et al.
(författare)
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Effect of thermal annealing on defects in post-growth hydrogenated GaNP
- 2013
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : John Wiley & Sons. - 1610-1634 .- 1610-1642. ; 10:4, s. 561-563
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Tidskriftsartikel (refereegranskat)abstract
- Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.
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| 15. |
- Dagnelund, Daniel, et al.
(författare)
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Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
- 2012
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:023501
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
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| 16. |
- Izadifard, Morteza, 1965-, et al.
(författare)
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Role of hydrogen in improving optical quality of GaNAs alloys
- 2003
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Ingår i: 11th Int. Conf. on Narrow Bandgap Semiconductors,2003. - Physica E, Vol 20 : Elsevier. ; , s. 313-316
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Konferensbidrag (refereegranskat)abstract
- Effects of hydrogen irradiation on optical quality of GaNxAs1−x alloys grown by gas source molecular beam epitaxy are studied by photoluminescence (PL) and PL excitation spectroscopies. A strong blue shift of the alloy band gap towards the value of a reference N-free GaAs samples is revealed. Substantial improvements in the optical quality of the structures induced by hydrogen, due to a reduction of band edge potential fluctuations, is also demonstrated. The effect is tentatively attributed to the preferential trapping of hydrogen atoms at the lattice sites with the highest N compositions, which leads to the neutralization of electronic states contributing to the band tail states as well as to the improvement in strain uniformity.
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| 17. |
- Kulakova, Alina, et al.
(författare)
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Chemometrics in Protein Formulation : Stability Governed by Repulsion and Protein Unfolding
- 2023
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Ingår i: Molecular Pharmaceutics. - 1543-8384. ; 20:6, s. 2951-2965
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Tidskriftsartikel (refereegranskat)abstract
- Therapeutic proteins can be challenging to develop due to their complexity and the requirement of an acceptable formulation to ensure patient safety and efficacy. To date, there is no universal formulation development strategy that can identify optimal formulation conditions for all types of proteins in a fast and reliable manner. In this work, high-throughput characterization, employing a toolbox of five techniques, was performed on 14 structurally different proteins formulated in 6 different buffer conditions and in the presence of 4 different excipients. Multivariate data analysis and chemometrics were used to analyze the data in an unbiased way. First, observed changes in stability were primarily determined by the individual protein. Second, pH and ionic strength are the two most important factors determining the physical stability of proteins, where there exists a significant statistical interaction between protein and pH/ionic strength. Additionally, we developed prediction methods by partial least-squares regression. Colloidal stability indicators are important for prediction of real-time stability, while conformational stability indicators are important for prediction of stability under accelerated stress conditions at 40 °C. In order to predict real-time storage stability, protein-protein repulsion and the initial monomer fraction are the most important properties to monitor.
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| 18. |
- Polimeni, A., et al.
(författare)
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Nitrogen passivation induced by atomic hydrogen : The GaP1-yNy case
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:20, s. 2013031-2013034
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Tidskriftsartikel (refereegranskat)abstract
- We report on the evolution of the optical properties of GaP1-yNy epilayers upon hydrogen irradiation for an extended nitrogen concentration range (y = 0.05% - 1.3%). For y = 0.6%, photoluminescence measurements show that hydrogen leads to an apparent band gap widening and to an ensuing appearance of N cluster states in the forbidden gap of GaP1-yNy, Hydrogen removal from the samples results in a full recovery of the electronic properties of the as-grown material. For lower N concentration (y = 0.05%), hydrogen causes a spectral weight transfer from electronic levels associated with closer N pairs to those associated with more distant N pairs and single N atoms.
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| 19. |
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| 20. |
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| 21. |
- Puttisong, Yuttapoom, et al.
(författare)
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Room temperature spin filtering effect in GaNAs: Role of hydrogen
- 2011
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 99:15, s. 152109-
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Tidskriftsartikel (refereegranskat)abstract
- Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown to lead to nearly complete quenching of the room-temperature spin-filtering effect in both GaNAs epilayers and GaNAs/GaAs multiple quantum wells, accompanied by a reduction in concentrations of Ga(i) interstitial defects. Our finding provides strong evidence for efficient hydrogen passivation of these spin-filtering defects, likely via formation of complexes between Gai defects and hydrogen, as being responsible for the Observed strong suppression of the spin-filtering effect after the hydrogen treatments.
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