| 1. |
- Lang, J. J. K., et al.
(författare)
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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
- 2011
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 605:9-10, s. 883-888
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Tidskriftsartikel (refereegranskat)abstract
- Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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| 2. |
- Punkkinen, Marko P. J., et al.
(författare)
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Core-level shifts of InP(100)(2 x 4) surface : Theory and experiment
- 2009
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 603:16, s. 2664-2668
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Tidskriftsartikel (refereegranskat)abstract
- Surface core-level shifts (SCLSs) of the (2 x 4)-reconstructed InP(100) surface with the established mixed In-P dimer structure have been investigated by first-principles calculations and photoelectron spectroscopy. Theoretical values were calculated using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy functional. The obtained theoretical values are quite similar within both approximations. The found differences originate in the tiny structural differences. It is concluded that the expansion or contraction of the crystal lattice has smaller effect on the SCLSs than the geometrical details of the reconstruction, which suggests that the Madelung potential has the dominant effect on the SCLSs. The results support the presence of a P 2p peak at higher binding energy (BE) compared to bulk peak, as proposed with recent measurements [P. Laukkamen, J. Pakarinen, M. Ahola-Tuomi, M. Kuzmin, R. E. Perala, I. J. Vayrynen, A. Tukiainen, V. Rimpilainen, M. Pessa, M. Adell, J. Sadowski, Surf. Sci. 600 (2006) 3022], and reveal several hitherto not reported SCLSs. The calculated SCLSs reproduce the measured spectra within reasonable accuracy. Furthermore, the atomic origins of the InP(100)(2 x 4) SCLSs are solved. In particular, it is shown that the lowest SCLS of P 2p, of the InP(100)(2 x 4) arises from the topmost In-P dimers.
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| 3. |
- Laukkanen, P., et al.
(författare)
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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:23, s. 231908-1-231908-3
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
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| 4. |
- Punkkinen, Marko P. J., et al.
(författare)
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Stability and structure of rare-earth metal and Ba-induced reconstructions on a Si(100) surface
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 80:23
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Tidskriftsartikel (refereegranskat)abstract
- We have studied, by means of ab initio calculations, the energetics and the atomic and electronic structures of various reconstructions induced by rare-earth metals (RE=Eu, Nd, Sm, and Yb) and Ba on Si(100) in the coverage range up to 0.5 monolayer. It is shown that Si dimer buckling is an important structural element for such systems, leading frequently to oblique surface lattice symmetries. The strong metal atom-silicon binding favors the increased amount of metal atoms per unit surface area, i.e., the (2x3) reconstruction with two metal atoms per unit cell is found to be energetically unstable with respect to the (2x1) reconstruction with three metal atoms per the same surface area [Eu/Si(100) and Yb/Si(100)]. The influence of the atomic size and the valence of the adsorbates is also investigated. In particular, it is found that an increase in atomic size stimulates the metal-metal repulsion, stabilizing the (2x3) configuration [Ba/Si(100)]. In the case of trivalent metals, the stabilization of the (2x3) is mediated by the loss of semiconducting state in the competing phases [Sm/Si(100) and Nd/Si(100)]. Our results demonstrate the importance of many factors, which account for the abundance of RE/Si(100) reconstructions. Finally, prominent atomic models are proposed for (2x3) and (2x6) reconstructions, and the character of the wavy "(1x2)" reconstruction is discussed. The simulated scanning tunneling microscopy images for the proposed (2x6) reconstruction are in a particularly good agreement with the complex experimental images.
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| 5. |
- Punkkinen, Marko P. J., et al.
(författare)
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Structure of ordered oxide on InAs(100) surface
- 2012
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 606:23-24, s. 1837-1841
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Tidskriftsartikel (refereegranskat)abstract
- It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In - O - In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 x 1) reconstruction than within the competing (2 x 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap. (C) 2012 Elsevier B.V. All rights reserved.
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| 6. |
- Kuzmin, M., et al.
(författare)
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Dimer-T(3) reconstruction of the Sm/Si(100)(2 x 3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 84:24, s. 245322-
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Tidskriftsartikel (refereegranskat)abstract
- Silicon dimer-containing reconstructions on Si(100) can be induced by submonolayer amounts of rare earth (RE) metals. The tilt of dimer bonds in such reconstructions can be controlled by the coverage and electronic properties of RE adsorbates. In this study, we have utilized improved high-resolution photoelectron spectroscopy with the synchrotron radiation and density functional theory (DFT) calculations to exploit the structural and electronic properties of the Sm/Si(100)(2 x 3) system. A careful analysis of photoelectron spectra, in combination with DFT calculations of surface core-level shifts for silicon atoms in energetically plausible structural models, has allowed us to establish the favorable atomic configuration of Sm/Si(100)(2 x 3) with a buckled Si dimer and to explain characteristic features of Si 2p line shape in detail. It is shown that the dimer buckling leads to a significant core-level binding-energy splitting of the first-layer Si atoms, affecting the lower-binding-energy region of Si 2p spectra drastically. An interpretation of the Si 2p line shape for RE/Si(100)(2 x 3) that is based on combined initial state and complete screening data is suggested. The mechanism underlying the buckling and symmetrization of silicon dimers in RE/Si(100) reconstructions is discussed.
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| 7. |
- Kuzmin, M., et al.
(författare)
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Photoemission and density functional theory study of Ge(100) : Clean surface and Yb-induced (2x4) reconstruction
- 2013
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Ingår i: Surface Science. - : Elsevier. - 0039-6028 .- 1879-2758. ; 615, s. 88-96
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Tidskriftsartikel (refereegranskat)abstract
- Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit electronically and structurally similar reconstructions. However, the fundamental bulk properties of group-IV materials can have an impact on particular features of such systems, which are related, e.g., to final-state relaxation in photoemission and thus determine their spectral line shape. Here we have studied Yb/Ge(100)(2 x 4) reconstruction as well as clean Ge(100) surface by high-resolution photoelectron spectroscopy and ab initio calculations. An atomic geometry of both surfaces is thoroughly investigated. A detailed analysis of Ge 3d core-level photoemission, atomic origins of surface-shifted components, and final-state screening effects is presented. In particular, it is demonstrated that the core-hole screening plays an essential role in Ge 3d measurements, and that its amount in the complete screening model correlates well with the core-level binding energy of respective Ge atoms in the initial state. The results are discussed in the proper context of related reconstructions on Si(100).
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| 8. |
- Laukkanen, P., et al.
(författare)
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Formation and destabilization of Ga interstitials in GaAsN : Experiment and theory
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:19, s. 195205-
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Tidskriftsartikel (refereegranskat)abstract
- Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increased at surfaces. The present results suggest that the energetically favorable Ga interstitial atoms are much more abundant in GaAsN than the previously considered N defects, which have relatively large formation energies. Our synchrotron radiation core-level photoemission measurements support the computational results. The formation of harmful Ga interstitials should be reduced by incorporating large group IV B atoms in GaAsN.
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| 9. |
- Punkkinen, Marko Patrick John, et al.
(författare)
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Oxidized In-containing III-V(100) surfaces : Formation of crystalline oxide films and semiconductor-oxide interfaces
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:19, s. 195329-
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Tidskriftsartikel (refereegranskat)abstract
- Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.
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| 10. |
- Ahola-Tuomi, M., et al.
(författare)
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Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:24, s. 245401-
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Tidskriftsartikel (refereegranskat)abstract
- We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.
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| 11. |
- Airiskallio, E., et al.
(författare)
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Tuning the surface chemistry of Fe-Cr by V doping
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 80:15
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Tidskriftsartikel (refereegranskat)abstract
- The reversal of the magnitudes of the bulk and surface chemical-potential differences induces the outburst of Cr on the otherwise pure Fe surface of Fe-Cr alloys. This threshold value for the Cr content is about 10 at. %. It is found that vanadium addition to Fe-Cr shifts the Cr threshold to a substantially lower value suggesting V having a positive effect on the corrosion resistance of low Cr steels. The obtained shift in the Cr threshold is shown to be connected to the change in volume of the alloy.
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| 12. |
- Kuzmin, M., et al.
(författare)
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Stability, structural, and electronic properties of atomic chains on Yb/Ge(111)3X2 studied by STM and STS
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:15, s. 155312-
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Tidskriftsartikel (refereegranskat)abstract
- By means of scanning tunneling microscopy and spectroscopy (STM/STS), we have investigated the stability and the structure of atomic chains on Yb/Ge (111) 3 X 2. STM allows the identification of different building blocks of this reconstruction, depending on the bias polarity and voltage, and validates the honeycomb chain-channel (HCC) structure with the Ge=Ge double bond and metal coverage of 1/6 ML for Yb/Ge (111)3 X 2, in agreement with the recent photoemission study [Kuzmin et al., Phys. Rev. B 75, 165305 (2007)]. The Yb atoms are found to be adsorbed on similar sites in the well-defined X 2 rows. Locally, such rows are distorted, leading to the X 4 periodicity, where the Yb atoms are adsorbed on two different sites that are well consistent with T4 and H3 sites. It is also assumed that Yb atoms can fluctuate rapidly between the neighboring T4 and H3 sites, leading to continuous rows observed together with the X 2 rows in STM images. The stability of Ge honeycomb chain is controlled by the presence of Yb atom per two (3 X 1) surface units in average, which results in the donation of one electron from Yb to the surface per (3 X 1) unit. When this density is locally changed, the Ge honeycomb chain is found to be broken. The inner structure of the Ge honeycomb chain is visualized in STM and shows dimerized features without any apparent buckling. The STM observations also account for why the double periodicity is missing in the low-energy electron diffraction pattern from Yb/Ge (111)3X2. The local electronic structure of this reconstruction, namely the Yb rows and Ge honeycomb chains, is studied by STS. The results support the HCC structure with the Ge=Ge double bond. It is believed that the present study elucidates the difference between the (3X2) reconstructions of Yb and Eu on Ge (111) and those of alkaline-earth and rare-earth metals on Si (111).
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| 13. |
- Laukkanen, P., et al.
(författare)
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Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate : Violation of the electron counting model
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 81:3
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Tidskriftsartikel (refereegranskat)abstract
- By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.
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| 14. |
- Laukkanen, P., et al.
(författare)
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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
- 2010
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 177:1, s. 52-57
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Tidskriftsartikel (refereegranskat)abstract
- We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.
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| 15. |
- Lu, Song, et al.
(författare)
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First-principles study of fcc-Ag/bcc-Fe interfaces
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 87:22, s. 224104-
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Tidskriftsartikel (refereegranskat)abstract
- Ab initio calculations are employed to determine the lower and upper bounds of the interfacial energy and work of separation of a fcc-Ag/bcc-Fe interface. The strain-free interfacial energy of the coherent interface is taken as the lower bound and the interfacial energy of the commensurate incoherent interface as the upper bound of the interfacial energy of a realistic semicoherent interface. The latter is estimated by applying an averaging scheme based on the interfacial energies obtained for the coherent interfaces. Similar calculations are performed for determining the bounds of the work of separation. We justify the use of the averaging scheme by carrying out large supercell calculations for a semicoherent interface. For a Fe(110)/Ag(111) semicoherent interface, we show that taking either Fe or Ag as the underlying lattice, our averaging scheme can yield a reasonable estimation of the work of separation of the semicoherent interface. However, when taking Ag as the underlying lattice, the averaged interfacial energy of the semicoherent interface is significantly underestimated due to the magnetism. The structure and magnetism at the coherent and semicoherent interfaces are discussed.
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| 16. |
- Lu, Song, et al.
(författare)
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Magnetic effect on the interfacial energy of the Ni(111)/Cr(110) interface
- 2014
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 26:35, s. 355001-
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Tidskriftsartikel (refereegranskat)abstract
- The work of separation and interfacial energy of the Ni(1 1 1)/Cr(1 1 0) interface are calculated via first-principles methods. Both coherent and semicoherent interfaces are considered. We find that magnetism has a significant effect on the interfacial energy, i.e. removing magnetism decreases the interfacial energy of the semicoherent interface by around 50% . Electronic, magnetic and atomic structures at the interface are discussed. An averaging scheme is used to estimate the work of separation and interfacial energy of semicoherent interfaces based on the results of coherent interfaces. The limitations of the scheme are discussed.
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| 17. |
- Zhang, Hualei, et al.
(författare)
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Ab initio determination of the elastic properties of ferromagnetic body-centered cubic Fe-Mn-Al alloys
- 2015
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 118:10
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Tidskriftsartikel (refereegranskat)abstract
- The elastic properties of ferromagnetic Fe1-x-yMnyAlx (0 <= x <= 0.5, y = 0, 0.1, and 0.2) random solid solutions in the body-centered cubic (bcc) crystallographic phase have been investigated using the ab initio exact muffin-tin orbitals method in combination with the coherent-potential approximation. Comparison with the experimental data demonstrates that the employed theoretical approach accurately captures the observed composition dependence of the lattice parameter. The predicted elastic parameters follow complex composition dependence. The C-11, C-12, and C' = (C-11 - C-12)/2 single-crystal elastic constants, the bulk (B), shear (G), and Young's (E) moduli, and the Cauchy pressure (C-12 - C-44) mainly decrease with increasing Al content, whereas the Zener anisotropy ratio (C-44/C') strongly increases with x. C-44 exhibits a non-linear x dependence. The Poisson (v) and Pugh (B/G) ratios first decrease with x but show non-monotonous behavior in high-Al alloys. In terms of the Pugh criterion, these trends suggest an increased brittleness in Al-containing alloys. Manganese has a complex non-monotonous effect on B/G in low-Al alloys (below similar to 15 at. % Al) but enhances the brittleness of the bcc solid solution in large-Al regime. The peculiar Mn alloying effect is explained in terms of magneto-volume mechanisms.
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| 18. |
- Zhang, Hualei, et al.
(författare)
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Elastic anomalies in Fe-Cr alloys
- 2013
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 25:19, s. 195501-
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Tidskriftsartikel (refereegranskat)abstract
- Using ab initio alloy theory, we determine the elastic parameters of ferromagnetic and paramagnetic Fe1-cCrc (0 <= c <= 1) alloys in the body centered cubic crystallographic phase. Comparison with the experimental data demonstrates that the employed theoretical approach accurately describes the observed composition dependence of the polycrystalline elastic moduli. The predicted single-crystal elastic constants follow complex anomalous trends, which are shown to originate from the interplay between magnetic and chemical effects. The nonmonotonic composition dependence of the elastic parameters has marked implications on the micro-mechanical properties of ferrite stainless steels.
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| 19. |
- Zhang, Hualei, et al.
(författare)
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Theoretical elastic moduli of ferromagnetic bcc Fe alloys
- 2010
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 22:27, s. 275402-
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Tidskriftsartikel (refereegranskat)abstract
- The polycrystalline elastic parameters of ferromagnetic Fe1-xMx (M = Al, Si, V, Cr, Mn, Co, Ni, Rh; 0 <= x <= 0.1) random alloys in the body centered cubic (bcc) crystallographic phase have been calculated using first-principles alloy theory in combination with statistical averaging methods. With a few exceptions, the agreement between the calculated and the available experimental data for the polycrystalline aggregates is satisfactory. All additions considered here decrease the bulk modulus (B) and Poisson's ratio (nu) of bcc Fe. The complex composition dependence of the C-44 single-crystal elastic constant is reflected in the polycrystalline shear modulus (G), Young's modulus (E), and Debye temperature (Theta). The polycrystalline anisotropy of bcc Fe is increased by all additions, and Al, Si, Ni, and Rh yield the largest alloying effects.
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