| 1. |
- Gustafsson, Oscar, et al.
(författare)
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Photoluminescence photoresponse from InSb/InAs-based quantum dot structures
- 2012
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 20:19, s. 21264-71
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Tidskriftsartikel (refereegranskat)abstract
- InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
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| 2. |
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| 3. |
- Omanakuttan, Giriprasanth, et al.
(författare)
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Surface emitting 1.5 mu m multi-quantum well LED on epitaxial lateral overgrowth InP/Si
- 2020
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Ingår i: Optical Materials Express. - : The Optical Society. - 2159-3930 .- 2159-3930. ; 10:7, s. 1714-1723
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a surface emitting 1.5 mu m multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 mu m and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 mu m MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 mu m surface emitting laser structures on silicon with further optimization.
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| 4. |
- Gyger, Samuel, et al.
(författare)
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Metropolitan single-photon distribution at 1550 nm for random number generation
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:19, s. 194003-
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Tidskriftsartikel (refereegranskat)abstract
- Quantum communication networks will connect future generations of quantum processors, enable metrological applications, and provide security through quantum key distribution. We present a testbed that is part of the municipal fiber network in the greater Stockholm metropolitan area for quantum resource distribution through a 20 km long fiber based on semiconductor quantum dots emitting in the telecom C-band. We utilize the service to generate random numbers passing the NIST test suite SP800-22 at a subscriber 8 km outside of the city with a bit rate of 23.4 kbit/s.
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| 5. |
- Gyger, Samuel, et al.
(författare)
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Metropolitan Single-Photon Distribution at 1550 nm for Random Number Generation
- 2023
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Ingår i: 2023 Conference on Lasers and Electro-Optics, CLEO 2023. - : Institute of Electrical and Electronics Engineers Inc..
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Konferensbidrag (refereegranskat)abstract
- Quantum communication networks are used for QKD and metrological applications. We present research connecting two nodes ≈ 20 kilometers apart over the municipal fiber network using semiconductor quantum dots emitting at 1550 nm.
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| 6. |
- Gyger, Samuel, et al.
(författare)
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Reconfigurable frequency coding of triggered single photons in the telecom C–band
- 2019
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Ingår i: Optics Express. - : OSA. - 1094-4087. ; 27:10, s. 14400-14406
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate reconfigurable frequency manipulation of quantum states of light in the telecom C–band. Triggered single photons are encoded in a superposition state of three channels using sidebands up to 53 GHz created by an off-the-shelf phase modulator. The single photons are emitted by an InAs/GaAs quantum dot grown by metal-organic vapor-phase epitaxy within the transparency window of the backbone fiber optical network. A cross-correlation measurement of the sidebands demonstrates the preservation of the single photon nature; an important prerequisite for future quantum technology applications using the existing telecommunication fiber network.
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| 7. |
- Lettner, Thomas, et al.
(författare)
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Strain-controlled quantum dot fine-structure for entangled-photon generation at 1550 nm
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Entangled-photon generation at 1550nm in the telecom C-band is of critical importance, since it enables the realization of quantum communication protocols over long distance using deployed telecommunication infrastructure. InAs epitaxial quantum dots have recently enabled on-demand generation of entangled pairs of photons in this wavelength range. However, time-dependent state evolution, caused by the fine-structure splitting, currently limits the fidelity to a specific entangled state. Here, we show suppression of the fine-structure for InAs quantum dots using micromachined piezoelectric actuators and demonstrate generation of highly entangled photons in the telecom C-band. At the lowest fine-structure setting, we obtain a maximum fidelity of (90.0 ± 2.7)% (concurrence of (87.5 ± 3.1)%). The concurrence remains high also for moderate (weak) temporal-filtering, with values close to 80% (50%), corresponding to 30% (80%) of collected photons, respectively. The presented fine-structure control opens the way for the exploitation of entangled photons from quantum dots in fiber-based quantum communication protocols.
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| 8. |
- Lettner, Thomas, et al.
(författare)
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Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm
- 2021
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 21:24, s. 10501-10506
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Tidskriftsartikel (refereegranskat)abstract
- Entangled photon generation at 1550 nm in the telecom C-band is of critical importance as it enables the realization of quantum communication protocols over long distance using deployed telecommunication infrastructure. InAs epitaxial quantum dots have recently enabled on-demand generation of entangled photons in this wavelength range. However, time-dependent state evolution, caused by the fine-structure splitting, currently limits the fidelity to a specific entangled state. Here, we show fine-structure suppression for InAs quantum dots using micromachined piezoelectric actuators and demonstrate generation of highly entangled photons at 1550 nm. At the lowest fine-structure setting, we obtain a maximum fidelity of 90.0 +/- 2.7% (concurrence of 87.5 +/- 3.1%). The concurrence remains high also for moderate (weak) temporal filtering, with values close to 80% (50%), corresponding to 30% (80%) of collected photons, respectively. The presented fine-structure control opens the way for exploiting entangled photons from quantum dots in fiber-based quantum communication protocols.
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| 9. |
- Liu, S. -C, et al.
(författare)
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Lateral size scaling of photonic crystal surface-emitting lasers on Si
- 2017
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Ingår i: Optics InfoBase Conference Papers. - : Optical Society of America. - 9781943580279
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Konferensbidrag (refereegranskat)abstract
- We report here the lateral size scaling effect of the photonic crystal surface-emitting lasers (PCSELs) based on heterogeneously integrated InGaAsP MQW membranes transferred on silicon photonic crystal cavities. Lateral and vertical confinement schemes were also investigated towards low threshold lasing of PCSELs with small lateral cavity sizes.
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| 10. |
- Liu, Shih-Chia, et al.
(författare)
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Photonic crystal bandedge membrane lasers on silicon
- 2017
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Ingår i: Applied Optics. - 1559-128X .- 2155-3165. ; 56:31, s. H67-H73
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Tidskriftsartikel (refereegranskat)abstract
- We report here the design and experimental demonstration of optically pumped photonic crystal bandedge membrane lasers on silicon-on-insulator (SOI) and on bulk silicon (Si) substrates, based on heterogeneously integrated InGaAsP multi-quantum-well membrane layers transfer printed onto patterned photonic crystal cavities. Singlemode lasing under room-temperature operation was observed at 1542 nm, with excellent side mode suppression ratio greater than 31.5 dB, for the laser built on SOI substrate. For the laser built on bulk Si substrate, single-mode lasing was also achieved at 1452 nm with much lower thermal resistance, as compared to that of the laser built on SOI substrates. Such improved thermal characteristics are favorable for lasers operating potentially at higher temperatures and higher power.
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| 11. |
- Liu, S. -C, et al.
(författare)
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Photonic crystal surface-emitting lasers on bulk silicon substrate
- 2017
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Ingår i: Optics InfoBase Conference Papers. - : Optical Society of America. - 9781943580279
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Konferensbidrag (refereegranskat)abstract
- We report here heterogeneous photonic crystal (PC) bandedge surface emitting membrane lasers on bulk silicon (Si) substrates. Optically pumped lasers were demonstrated experimentally with single mode operation and side-mode suppression ratio (SMSR) greater than 13.5 dB. Thermal resistance was investigated to evaluate the heat dissipation and lasing characteristics afforded by this integration and potential for high efficiency application.
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| 12. |
- Liu, Shih-Chia, et al.
(författare)
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Photonic Crystal Surface-Emitting Lasers on Silicon Substrates
- 2017
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Ingår i: 2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509065707 ; , s. 77-78
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Konferensbidrag (refereegranskat)abstract
- We report here photonic crystal surface emitting lasers on bulk silicon substrates. Optically pumped lasers were demonstrated with single mode operation. Thermal resistance of such oxide-free cavity was investigated to evaluate the heat dissipation and lasing characteristics.
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| 13. |
- Liu, Shih-Chia, et al.
(författare)
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Size Scaling of Photonic Crystal Surface Emitting Lasers on Silicon Substrates
- 2018
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Ingår i: IEEE Photonics Journal. - : Institute of Electrical and Electronics Engineers (IEEE). - 1943-0655. ; 10:3
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Tidskriftsartikel (refereegranskat)abstract
- We report here the lateral cavity size scaling and confinement effects on the lasing performance in defect-free photonic crystal surface-emitting lasers (PCSEL) on silicon substrates Hybrid PCSELs with different lateral cavity sizes and different lateral confinement geometries have been fabricated using transfer printing technology and controlled selective etching The measured lasing properties show a strong dependence on the lateral cavity size below 100 mu m. In particular, the finite lateral dimension significantly affects the laser threshold and side mode suppression ratio (SMSR) of the PCSEL devices On the other hand, by controlling the lateral confinement using vertical etching, a reduction of the laser threshold is observed The experimental results agree well with theoretical predictions The work presented here can lead to ultra-compact PCSELs for on-chip integration with excellent energy efficiency.
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| 14. |
- Liu, S., et al.
(författare)
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Printed photonic crystal bandedge surface-emitting lasers on silicon
- 2015
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Ingår i: CLEO: Science and Innovations. - : Optical Society of America. - 9781557529688
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Konferensbidrag (refereegranskat)abstract
- We report experimental demonstration of a hybrid III-V/Si photonics crystal surface-emitting laser (PCSEL) based on membrane transfer printing technique. Single mode operation was observed with linewidth of 5 A and side-mode suppression ratio (SMSR) greater than 20 dB.
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| 15. |
- Menon, L., et al.
(författare)
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Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays
- 2016
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Ingår i: IEEE Photonics Journal. - : Institute of Electrical and Electronics Engineers (IEEE). - 1943-0655. ; 8:2
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Tidskriftsartikel (refereegranskat)abstract
- We report the design and fabrication of heterogeneously integrated silicon and InGaAs membrane photodetector arrays. Visible and near-infrared (NIR) detection can be achieved by transfer printing a silicon membrane on InGaAs substrate. Based on the penetration-depth-dependent absorption of different wavelengths, filter-free visible color detection can be obtained via three-junction photocurrent measurement for silicon, and NIR can be detected by InGaAs. The measurements show good agreement with the optical behavior predicted by the design and simulation.
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| 16. |
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| 17. |
- Reuterskiöld-Hedlund, Carl, et al.
(författare)
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Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon
- 2019
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 217:3
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Tidskriftsartikel (refereegranskat)abstract
- Herein, the design, metal-organic vapor-phase epitaxial growth, fabrication, and characterization of buried-tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ-light-emitting diodes on InP substrate show low series resistance and uniform carrier injection over square-shaped device areas with side length ranging from 15 up to 250 mu m, whereas BTJ-PCSEL structures with similar current injection configuration fabricated on photonic-crystal silicon-on-insulator substrate using transfer print technology show significant linewidth narrowing at low current density.
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| 18. |
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| 19. |
- Reuterskiöld Hedlund, Carl
(författare)
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Compound semiconductor materials and processing technologies for photonic devices and photonics integration
- 2020
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e.g. in terms of integration density, power efficiency, modulation bandwidth or spectral response, which call for innovative and refined methodologies. In the present thesis, we investigate a few different device designs or processing schemes that aims for extended performances or manufacturability as compared to presently available technologies. In specific, we study the design and fabrication of transistor-vertical-cavity surface-emitting lasers (T-VCSELs), the regrowth of InP-based driver electronics in the trenches of arrayed spatial light modulators (SLMs), the epitaxial growth and analysis of quantum dot (QD)-based interband photodetectors, the realization of InGaAs/GaAs QD-based single-photon emitters for the 1.55-μm waveband, as well as the fabrication of discrete and silicon-integrated photonic-crystal surface-emitting lasers (PCSELs).The transistor laser, invented at the University of Illinois around 2006, has received considerable interest due to potential major advantages in modulation bandwidth, noise properties and novel functionality as compared to conventional diode lasers. Here we study the design and fabrication of pnp-type 980-nm AlGaAs/InGaAs/GaAs T-VCSELs. Using an epitaxial regrowth process, an intracavity contacting scheme, and an optimized layer design, continuous-wave (CW) result in terms of threshold, output power and temperature performance comparable to conventional VCSELs could be demonstrated. In addition, the collector-current breakdown mechanism was shown to be due to a band-filling effect rather than an intracavity photon absorption process as previously suggested.A subsequent study regards the epitaxial regrowth for the integration of driver electronics with two-dimensional arrays of spatial light modulators (SLMs). The challenge here relies in controlling the regrowth morphology in the restricted areas that limit the SLM array fill factor. It is shown that the orientation of the SLM array with respect to the crystallographic directions is critical for controlling the regrowth7morphology, with mesa alignments along the <001> directions preferable over the <011> directions. Following this scheme, an optimized etch/regrowth process for top-contacted field-effect transistors is demonstrated.Next, we discuss the development of long-wavelength infrared (LWIR; 8-12 μm) detector elements for thermal imaging. Such detectors have traditionally been realized in the mercury-cadmium-telluride system (MCT; high performance but difficult materials properties resulting in high cost) or using AlGaAs/GaAs quantum-well infrared photodetectors (QWIPs; excellent manufacturing properties but compromised performance figures). In this work we consider interband QD photodetectors based on spatially indirect transitions in the In(Ga)Sb QD/InAs type-II system to combine the respective advantages of MCT detectors and QWIPs. An epitaxial growth process is optimized for photo-response in the LWIR regime, and the QD properties were also studied using excitation power-dependent PL and spatially resolved current-voltage spectroscopy using a scanning-tunneling microscope.Quantum dot-based structures were also studied for the development of single-photon telecommunication-wavelength emitters. In this case, InAs QDs were formed in an In-rich InGaAs metamorphic buffer layer grown on GaAs substrate. This resulted in narrow and bright micro-photoluminescence emission lines from isolated QDs around 1.55 μm at low temperature, thereby making the application of such QDs an interesting alternative approach to InAs/InP QDs for the realization of single-photon emitters for telecommunication-wavelength fiber-based quantum networks.Finally, we describe the development of silicon-integrated and discrete photonic-crystal surface-emitting lasers (PCSELs). In the former case, a transfer-print process is used to combine an SOI-based PC structure with an InP-based active region. This results in an ultra-shallow device structure and a buried tunnel-junction configuration is used for current injection. In the latter case, the metal-organic vapor-phase epitaxy (MOVPE) growth conditions are tuned to form perfectly encapsulated cavities in the InP matrix. Low-threshold lasing is thereby obtained from optical pumping.
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| 20. |
- Reuterskiöld Hedlund, Carl, et al.
(författare)
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Epitaxial growth, fabrication and analysis of vertical-cavity surface-emitting transistor lasers
- 2015
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The vertical-cavity surface-emitting transistor-laser (T-VCSEL) represents a new device paradigm with potential capability to meet upcoming requirements on low-cost power-efficient emitters for data rates up to 100 Gbit/s. However, the performance optimization of such devices requires precise control of carrier dynamics and optical losses that impose significant challenges on the epitaxial growth and fabrication processes. Here, we review the fabrication process of AlGaAs/InGaAs/GaAs pnp-type T-VCSELs based on epitaxial regrowth confinement, modulation doping, triple-intracavity contacting and non-conducting mirrors. The resulting static performance characteristics include threshold current, output power and high-temperature-performance in parity with conventional diode-type VCSELs.
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| 21. |
- Xiang, Yu, et al.
(författare)
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AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection to improve the lateral feeding.
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| 22. |
- Xiang, Yu, et al.
(författare)
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AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
- 2015
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Ingår i: Optics Express. - 1094-4087. ; 23:12, s. 15680-15699
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Tidskriftsartikel (refereegranskat)abstract
- We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60 degrees C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances.
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| 23. |
- Xiang, Yu, et al.
(författare)
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Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
- 2015
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Ingår i: IEEE Photonics Technology Letters. - : IEEE Press. - 1041-1135 .- 1941-0174. ; 27:7, s. 721-724
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Tidskriftsartikel (refereegranskat)abstract
- We report on the optimization of pnp-type verticalcavity surface-emitting transistor-lasers based on the fusion between an AlGaAs/GaAs heterojunction bipolar transistor and an InGaAs/GaAs VCSEL using an epitaxial regrowth process. It is shown how a proper design of the base region can extend the transistor active range of operation well beyond lasing threshold, thereby resulting in typical transistor laser operational characteristics including mW-range output power, mA-range base threshold current, record-low power dissipation under laser operation, and continuous-wave operation up to at least 60°C. A pronounced breakdown in the collector current characteristics in the limit of high base current and/or emitter-collector voltage accompanied by a quenching of the optical output power is interpreted as being related to quantum well band-filling.
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| 24. |
- Zabel, Thomas, et al.
(författare)
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Auger recombination in In(Ga)Sb/InAs quantum dots
- 2015
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 106:1
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Tidskriftsartikel (refereegranskat)abstract
- We report on the epitaxial formation of type II In0.5Ga0.5Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170-200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 x 10(-28) cm(6)/s for In0.5Ga0.5Sb/InAs quantum dots and 1.47 x 10(-27) cm(6)/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
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| 25. |
- Zeuner, Katharina, 1991-, et al.
(författare)
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On-demand generation of entangled photon pairs in the telecom C-band for fiber-based quantum networks
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- On–demand sources of entangled photons for the transmission of quantum information in the telecom C–band are required to realize fiber–based quantum networks. So far, non–deterministic sources of quantum states of light were used for long distance entanglement distribution in this lowest loss wavelength range. However, they are fundamentally limited in either efficiency or security due to their Poissonian emission statistics. Here, we show on–demand generation of entangled photon pairs in the telecom C-band by an InAs/GaAs semiconductor quantum dot. Using a robust phonon–assisted excitation scheme we measurea concurrence of 91.4% and a fidelity of 95.2% to Φ+ . On–demand generation of polarization entangled photons will enable secure quantum communication in fiber–based networks.Furthermore, applying this excitation scheme to several remote quantum dots tuned into resonance will enable first on–demand entanglement distribution over large distances for scalable real–life quantum applications.
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| 26. |
- Zeuner, Katharina, et al.
(författare)
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On-Demand Generation of Entangled Photon Pairs in the Telecom C-Band with InAs Quantum Dots
- 2021
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Ingår i: ACS Photonics. - : AMER CHEMICAL SOC. - 2330-4022. ; 8:8, s. 2337-2344
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Tidskriftsartikel (refereegranskat)abstract
- Entangled photons are an integral part in quantum optics experiments and a key resource in quantum imaging, quantum communication, and photonic quantum information processing. Making this resource available on-demand has been an ongoing scientific challenge with enormous progress in recent years. Of particular interest is the potential to transmit quantum information over long distances, making photons the only reliable flying qubit. Entangled photons at the telecom C-band could be directly launched into single-mode optical fibers, enabling worldwide quantum communication via existing telecommunication infrastructure. However, the on-demand generation of entangled photons at this desired wavelength window has been elusive. Here, we show a photon pair generation efficiency of 69.9 +/- 3.6% in the telecom C-band by an InAs/GaAs semiconductor quantum dot on a metamorphic buffer layer. Using a robust phonon-assisted two-photon excitation scheme we measure a maximum concurrence of 91.4 +/- 3.8% and a peak fidelity to the Phi(+) state of 95.2 +/- 1.1%, verifying on-demand generation of strongly entangled photon pairs and marking an important milestone for interfacing quantum light sources with our classical fiber networks.
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| 27. |
- Zhao, Deyin, et al.
(författare)
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Design and Characterization of Photonic Crystal Bandedge Surface-emitting Lasers on Silicon
- 2015
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Ingår i: 2015 PHOTONICS CONFERENCE (IPC). - : IEEE conference proceedings. - 9781479974658
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Konferensbidrag (refereegranskat)abstract
- We report the detailed design and experimental realization of single mode photonic crystal bandedge surface-emitting lasers on silicon based on a transfer process. By improving the coupling efficiency, the single mode operation regime can be shifted to higher temperatures.
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| 28. |
- Zhou, Weidong, et al.
(författare)
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On-Chip Photonic Crystal Surface-Emitting Membrane Lasers
- 2019
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 1077-260X .- 1558-4542. ; 25:3
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Tidskriftsartikel (refereegranskat)abstract
- Photonic crystal lasers can be realized either based on photonic bandgap defect mode or defect-free bandedge mode, while the bandgap is not essential for the latter. We review here defect-free bandedge mode based photonic crystal surface-emitting lasers (PCSELs) for on-chip integration. We first discuss ultra-thin membrane reflector vertical-cavity surface-emitting lasers (MR-VCSELs), where single layer photonic crystal slabs can be designed as a broadband membrane reflector. Later, we discuss another type of defect-free PCSELs where the lasing cavity is formed based on evanescent coupling of gain medium with the photonic crystal bandedge mode near bandedge. Cavity designs were carried out for the optimal modal overlap and high confinement factors. Lateral cavity size scaling was also investigated both theoretically and experimentally in PCSELs. Buried tunnel junction based InGaAsP quantum well heterostructures were also designed and incorporated into electrically injected PCSELs. Finally, discussions are given toward energy efficient lasers.
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