| 1. |
- Glasbey, JC, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 2. |
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| 3. |
- Salome, Pedro M. P., et al.
(författare)
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Passivation of Interfaces in Thin Film Solar Cells : Understanding the Effects of a Nanostructured Rear Point Contact Layer
- 2018
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 5:2
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Tidskriftsartikel (refereegranskat)abstract
- Thin film solar cells based in Cu(In,Ga)Se-2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.
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| 4. |
- Salome, Pedro M. P., et al.
(författare)
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Cd and Cu Interdiffusion in Cu(In, Ga) Se-2/CdS Hetero-Interfaces
- 2017
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Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 7:3, s. 858-863
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Tidskriftsartikel (refereegranskat)abstract
- We report a detailed characterization of an industrylike prepared Cu(In, Ga) Se-2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.
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